JP6408250B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6408250B2 JP6408250B2 JP2014102106A JP2014102106A JP6408250B2 JP 6408250 B2 JP6408250 B2 JP 6408250B2 JP 2014102106 A JP2014102106 A JP 2014102106A JP 2014102106 A JP2014102106 A JP 2014102106A JP 6408250 B2 JP6408250 B2 JP 6408250B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- transistor
- layer
- film
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
- H10D88/01—Manufacture or treatment
Landscapes
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014102106A JP6408250B2 (ja) | 2013-05-20 | 2014-05-16 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013106253 | 2013-05-20 | ||
| JP2013106253 | 2013-05-20 | ||
| JP2013106223 | 2013-05-20 | ||
| JP2013106223 | 2013-05-20 | ||
| JP2014102106A JP6408250B2 (ja) | 2013-05-20 | 2014-05-16 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018175834A Division JP6637560B2 (ja) | 2013-05-20 | 2018-09-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015005733A JP2015005733A (ja) | 2015-01-08 |
| JP2015005733A5 JP2015005733A5 (OSRAM) | 2017-06-08 |
| JP6408250B2 true JP6408250B2 (ja) | 2018-10-17 |
Family
ID=51895094
Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014102106A Expired - Fee Related JP6408250B2 (ja) | 2013-05-20 | 2014-05-16 | 半導体装置 |
| JP2018175834A Active JP6637560B2 (ja) | 2013-05-20 | 2018-09-20 | 半導体装置 |
| JP2019230254A Active JP6923631B2 (ja) | 2013-05-20 | 2019-12-20 | 半導体装置の作製方法および半導体装置 |
| JP2021123950A Withdrawn JP2021177574A (ja) | 2013-05-20 | 2021-07-29 | 半導体装置 |
| JP2023104811A Active JP7495559B2 (ja) | 2013-05-20 | 2023-06-27 | 半導体装置 |
| JP2024083785A Active JP7657354B2 (ja) | 2013-05-20 | 2024-05-23 | 半導体装置及び半導体装置の作製方法 |
| JP2025049860A Pending JP2025094207A (ja) | 2013-05-20 | 2025-03-25 | 半導体装置 |
Family Applications After (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018175834A Active JP6637560B2 (ja) | 2013-05-20 | 2018-09-20 | 半導体装置 |
| JP2019230254A Active JP6923631B2 (ja) | 2013-05-20 | 2019-12-20 | 半導体装置の作製方法および半導体装置 |
| JP2021123950A Withdrawn JP2021177574A (ja) | 2013-05-20 | 2021-07-29 | 半導体装置 |
| JP2023104811A Active JP7495559B2 (ja) | 2013-05-20 | 2023-06-27 | 半導体装置 |
| JP2024083785A Active JP7657354B2 (ja) | 2013-05-20 | 2024-05-23 | 半導体装置及び半導体装置の作製方法 |
| JP2025049860A Pending JP2025094207A (ja) | 2013-05-20 | 2025-03-25 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9202925B2 (OSRAM) |
| JP (7) | JP6408250B2 (OSRAM) |
| KR (1) | KR20140136385A (OSRAM) |
| TW (1) | TWI664731B (OSRAM) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140027762A1 (en) * | 2012-07-27 | 2014-01-30 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| US9853053B2 (en) | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
| SG10201601511RA (en) | 2013-05-20 | 2016-03-30 | Semiconductor Energy Lab | Semiconductor device |
| US9647125B2 (en) | 2013-05-20 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP6374221B2 (ja) | 2013-06-05 | 2018-08-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9773915B2 (en) | 2013-06-11 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2015049818A1 (ja) * | 2013-10-03 | 2015-04-09 | パナソニック株式会社 | 薄膜トランジスタ基板の製造方法 |
| DE102014220672A1 (de) | 2013-10-22 | 2015-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| TWI666770B (zh) | 2013-12-19 | 2019-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| JP6444714B2 (ja) | 2013-12-20 | 2018-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9472678B2 (en) | 2013-12-27 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2015114476A1 (en) | 2014-01-28 | 2015-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2016083952A1 (en) | 2014-11-28 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
| JP6647846B2 (ja) | 2014-12-08 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2016099580A2 (en) | 2014-12-23 | 2016-06-23 | Lupino James John | Three dimensional integrated circuits employing thin film transistors |
| JP6466180B2 (ja) | 2015-01-15 | 2019-02-06 | 住友重機械工業株式会社 | モータ |
| US9954112B2 (en) * | 2015-01-26 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6650888B2 (ja) * | 2015-02-06 | 2020-02-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10147823B2 (en) | 2015-03-19 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102582523B1 (ko) * | 2015-03-19 | 2023-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| TWI695513B (zh) * | 2015-03-27 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| KR102546189B1 (ko) * | 2015-04-13 | 2023-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US10192995B2 (en) * | 2015-04-28 | 2019-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102549926B1 (ko) | 2015-05-04 | 2023-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기 |
| US10985278B2 (en) | 2015-07-21 | 2021-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| TWI806127B (zh) * | 2016-02-12 | 2023-06-21 | 光程研創股份有限公司 | 光學裝置及光學系統 |
| US10170569B2 (en) | 2016-02-22 | 2019-01-01 | Applied Materials, Inc. | Thin film transistor fabrication utlizing an interface layer on a metal electrode layer |
| US10411003B2 (en) * | 2016-10-14 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US10692869B2 (en) | 2016-11-17 | 2020-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN118102714A (zh) | 2017-03-13 | 2024-05-28 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| US11316051B2 (en) | 2018-03-07 | 2022-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US10388800B1 (en) * | 2018-03-30 | 2019-08-20 | Intel Corporation | Thin film transistor with gate stack on multiple sides |
| CN110626070B (zh) | 2018-09-19 | 2020-08-21 | 精工爱普生株式会社 | 液体喷出装置、液体喷出系统、以及打印头 |
| US11264506B2 (en) * | 2018-10-31 | 2022-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102581399B1 (ko) * | 2018-11-02 | 2023-09-22 | 삼성전자주식회사 | 반도체 메모리 소자 |
| US20230027402A1 (en) * | 2020-01-10 | 2023-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating semiconductor device |
| WO2025215499A1 (ja) * | 2024-04-12 | 2025-10-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (149)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0368170A (ja) * | 1989-08-07 | 1991-03-25 | Nippon Soken Inc | 薄膜半導体素子の製造方法 |
| JPH04337671A (ja) * | 1991-05-15 | 1992-11-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JPH0870101A (ja) * | 1994-08-11 | 1996-03-12 | Northern Telecom Ltd | 集積回路コンデンサ構造およびその製造方法 |
| JP3078720B2 (ja) * | 1994-11-02 | 2000-08-21 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| JPH11505377A (ja) | 1995-08-03 | 1999-05-18 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体装置 |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Ｈｏｙａ株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| WO2003040441A1 (fr) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法 |
| CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| JP2003298065A (ja) * | 2002-04-02 | 2003-10-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| JP4449076B2 (ja) | 2004-04-16 | 2010-04-14 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| WO2006051995A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
| KR100998527B1 (ko) | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| TWI481024B (zh) | 2005-01-28 | 2015-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| GB2425401A (en) | 2005-04-21 | 2006-10-25 | Stuart Philip Speakman | Manufacture of microstructures using peelable mask |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機ｅｌ表示装置およびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| KR101103374B1 (ko) | 2005-11-15 | 2012-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ＺｎＯ ＴＦＴ |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーｅｌディスプレイおよびその製造方法 |
| JP5305630B2 (ja) * | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| JP5121254B2 (ja) * | 2007-02-28 | 2013-01-16 | キヤノン株式会社 | 薄膜トランジスタおよび表示装置 |
| JP2008216940A (ja) * | 2007-03-08 | 2008-09-18 | Seiko Epson Corp | 電気光学装置の製造方法 |
| US7569886B2 (en) | 2007-03-08 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacture method thereof |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ＺｎＯ 계 박막 트랜지스터 및 그 제조방법 |
| US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
| JP2009170794A (ja) * | 2008-01-18 | 2009-07-30 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体装置の製造方法 |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| KR101711249B1 (ko) | 2008-11-07 | 2017-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| SG162675A1 (en) * | 2008-12-15 | 2010-07-29 | Semiconductor Energy Lab | Manufacturing method of soi substrate and manufacturing method of semiconductor device |
| WO2011065243A1 (en) * | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5497417B2 (ja) | 2009-12-10 | 2014-05-21 | 富士フイルム株式会社 | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
| KR101768433B1 (ko) * | 2009-12-18 | 2017-08-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
| KR20170142998A (ko) * | 2009-12-25 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
| JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
| US8653514B2 (en) * | 2010-04-09 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9209314B2 (en) | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
| WO2011158704A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101842181B1 (ko) * | 2010-08-04 | 2018-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI555128B (zh) * | 2010-08-06 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
| KR101932576B1 (ko) * | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| CN103222037B (zh) * | 2010-11-17 | 2014-10-29 | 夏普株式会社 | 薄膜晶体管基板、具有它的显示装置和薄膜晶体管基板的制造方法 |
| KR101680768B1 (ko) * | 2010-12-10 | 2016-11-29 | 삼성전자주식회사 | 트랜지스터 및 이를 포함하는 전자장치 |
| TWI570920B (zh) * | 2011-01-26 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TW202211311A (zh) * | 2011-01-26 | 2022-03-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| TWI521612B (zh) * | 2011-03-11 | 2016-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| JP5933300B2 (ja) | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8541266B2 (en) | 2011-04-01 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9012905B2 (en) * | 2011-04-08 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same |
| JP6006975B2 (ja) * | 2011-05-19 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5731904B2 (ja) * | 2011-05-25 | 2015-06-10 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US8610482B2 (en) * | 2011-05-27 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Trimming circuit and method for driving trimming circuit |
| JP2013016611A (ja) * | 2011-07-04 | 2013-01-24 | Sony Corp | 半導体装置及びその製造方法、並びに、画像表示装置の製造方法 |
| US9385238B2 (en) | 2011-07-08 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor using oxide semiconductor |
| US9214474B2 (en) * | 2011-07-08 | 2015-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US8946812B2 (en) * | 2011-07-21 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5829477B2 (ja) | 2011-10-20 | 2015-12-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8951862B2 (en) * | 2012-01-10 | 2015-02-10 | Macronix International Co., Ltd. | Damascene word line |
| KR102222344B1 (ko) * | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| DE102014208859B4 (de) * | 2013-05-20 | 2021-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| SG10201601511RA (en) | 2013-05-20 | 2016-03-30 | Semiconductor Energy Lab | Semiconductor device |
| US9647125B2 (en) | 2013-05-20 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9343579B2 (en) | 2013-05-20 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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| Publication number | Publication date |
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| US20160087107A1 (en) | 2016-03-24 |
| TWI664731B (zh) | 2019-07-01 |
| KR20140136385A (ko) | 2014-11-28 |
| JP2024116165A (ja) | 2024-08-27 |
| JP2020057809A (ja) | 2020-04-09 |
| JP6637560B2 (ja) | 2020-01-29 |
| JP7495559B2 (ja) | 2024-06-04 |
| JP2023123693A (ja) | 2023-09-05 |
| US9755081B2 (en) | 2017-09-05 |
| JP2021177574A (ja) | 2021-11-11 |
| JP2025094207A (ja) | 2025-06-24 |
| TW201501316A (zh) | 2015-01-01 |
| US9202925B2 (en) | 2015-12-01 |
| JP7657354B2 (ja) | 2025-04-04 |
| US20140339546A1 (en) | 2014-11-20 |
| JP6923631B2 (ja) | 2021-08-25 |
| JP2019036735A (ja) | 2019-03-07 |
| JP2015005733A (ja) | 2015-01-08 |
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