JP6403087B2 - 酸化ニオブスパッタリングターゲット及びその製造方法 - Google Patents
酸化ニオブスパッタリングターゲット及びその製造方法 Download PDFInfo
- Publication number
- JP6403087B2 JP6403087B2 JP2014023246A JP2014023246A JP6403087B2 JP 6403087 B2 JP6403087 B2 JP 6403087B2 JP 2014023246 A JP2014023246 A JP 2014023246A JP 2014023246 A JP2014023246 A JP 2014023246A JP 6403087 B2 JP6403087 B2 JP 6403087B2
- Authority
- JP
- Japan
- Prior art keywords
- niobium oxide
- powder
- sputtering
- sputtering target
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/6265—Thermal treatment of powders or mixtures thereof other than sintering involving reduction or oxidation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
- C04B2235/3253—Substoichiometric niobium or tantalum oxides, e.g. NbO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Compositions Of Oxide Ceramics (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014023246A JP6403087B2 (ja) | 2013-02-26 | 2014-02-10 | 酸化ニオブスパッタリングターゲット及びその製造方法 |
| KR1020157022703A KR20150120996A (ko) | 2013-02-26 | 2014-02-20 | 산화 니오브 스퍼터링 타깃, 그 제조 방법 및 산화 니오브막 |
| CN201480010227.2A CN105074046A (zh) | 2013-02-26 | 2014-02-20 | 氧化铌溅射靶、其制造方法及氧化铌膜 |
| PCT/JP2014/054004 WO2014132872A1 (ja) | 2013-02-26 | 2014-02-20 | 酸化ニオブスパッタリングターゲット、その製造方法及び酸化ニオブ膜 |
| TW103105848A TWI603938B (zh) | 2013-02-26 | 2014-02-21 | 氧化鈮濺鍍靶、其製造方法及氧化鈮膜 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013035575 | 2013-02-26 | ||
| JP2013035575 | 2013-02-26 | ||
| JP2014023246A JP6403087B2 (ja) | 2013-02-26 | 2014-02-10 | 酸化ニオブスパッタリングターゲット及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014194072A JP2014194072A (ja) | 2014-10-09 |
| JP2014194072A5 JP2014194072A5 (enExample) | 2017-09-14 |
| JP6403087B2 true JP6403087B2 (ja) | 2018-10-10 |
Family
ID=51428143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014023246A Expired - Fee Related JP6403087B2 (ja) | 2013-02-26 | 2014-02-10 | 酸化ニオブスパッタリングターゲット及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6403087B2 (enExample) |
| KR (1) | KR20150120996A (enExample) |
| CN (1) | CN105074046A (enExample) |
| TW (1) | TWI603938B (enExample) |
| WO (1) | WO2014132872A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6273376B2 (ja) * | 2014-10-06 | 2018-01-31 | Jx金属株式会社 | ニオブ酸化物焼結体及び該焼結体からなるスパッタリングターゲット並びにニオブ酸化物焼結体の製造方法 |
| JP6492877B2 (ja) * | 2015-03-30 | 2019-04-03 | 東ソー株式会社 | 酸化物焼結体及びその製造方法 |
| CN105506737B (zh) * | 2015-12-28 | 2018-02-09 | 常州瞻驰光电科技有限公司 | 一种非化学计量比氧化铌多晶镀膜材料及其生长技术 |
| CN110963529B (zh) * | 2018-09-30 | 2021-12-07 | 中国科学院上海硅酸盐研究所 | 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用 |
| WO2020195121A1 (ja) | 2019-03-26 | 2020-10-01 | Jx金属株式会社 | ニオブスパッタリングターゲット |
| CN110467462A (zh) * | 2019-08-09 | 2019-11-19 | 宁夏中色新材料有限公司 | 一种高致密低电阻氧化铌旋转靶材及其制备方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2915177B2 (ja) * | 1990-11-30 | 1999-07-05 | 株式会社日立製作所 | スパッタリングターゲットの製造方法及びこの方法によって製造されたスパッタリングターゲット |
| JP2000113913A (ja) * | 1998-10-02 | 2000-04-21 | Sumitomo Osaka Cement Co Ltd | 色素増感型太陽電池 |
| JP2002338354A (ja) * | 2001-05-18 | 2002-11-27 | Kyocera Corp | 酸化ニオブ焼結体とその製造方法及びこれを用いたスパッタリングターゲット |
| JP2003098340A (ja) * | 2001-09-21 | 2003-04-03 | Asahi Glass Co Ltd | 光学多層干渉膜とその製造方法および光学多層干渉膜を用いたフィルター |
| JP2003123853A (ja) * | 2001-10-11 | 2003-04-25 | Bridgestone Corp | 有機色素増感型金属酸化物半導体電極及びその製造方法、並びにこの半導体電極を有する太陽電池 |
| JP2004059965A (ja) * | 2002-07-25 | 2004-02-26 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
| JP4670097B2 (ja) * | 2005-04-27 | 2011-04-13 | Agcセラミックス株式会社 | ターゲットおよび該ターゲットによる高屈折率膜の製造方法 |
| CN101851740A (zh) * | 2009-04-02 | 2010-10-06 | 宜兴佰伦光电材料科技有限公司 | 用于磁控溅射镀膜的导电Nb2O5-x靶材及生产方法 |
| CN101864555A (zh) * | 2009-04-14 | 2010-10-20 | 上海高展金属材料有限公司 | 一种导电的氧化铌靶材、制备方法及其应用 |
| TWI385814B (zh) * | 2009-05-25 | 2013-02-11 | Ind Tech Res Inst | 光電致變色元件及其製作方法 |
| KR101137913B1 (ko) * | 2009-11-12 | 2012-05-03 | 삼성코닝정밀소재 주식회사 | 다상 Nb0x 스퍼터링 타겟 및 그 제조방법 |
| JP5249963B2 (ja) * | 2010-02-01 | 2013-07-31 | 三井金属鉱業株式会社 | セラミックス−金属複合材料からなるスパッタリングターゲット材およびスパッタリングターゲット |
| KR101967945B1 (ko) * | 2010-04-26 | 2019-04-10 | 제이엑스금속주식회사 | Sb-Te기 합금 소결체 스퍼터링 타깃 |
| JP2012126619A (ja) * | 2010-12-16 | 2012-07-05 | Sumitomo Chemical Co Ltd | 酸化亜鉛焼結体およびその製造方法 |
| JP5630416B2 (ja) * | 2011-03-23 | 2014-11-26 | 住友金属鉱山株式会社 | Cu−Ga合金スパッタリングターゲットの製造方法及びCu−Ga合金粉末の製造方法 |
| JP5501306B2 (ja) * | 2011-08-18 | 2014-05-21 | 出光興産株式会社 | In−Ga−Zn−O系スパッタリングターゲット |
| JP2012017258A (ja) * | 2011-10-05 | 2012-01-26 | Idemitsu Kosan Co Ltd | In−Ga−Zn系酸化物スパッタリングターゲット |
| CN102659405B (zh) * | 2012-04-06 | 2014-02-26 | 西北稀有金属材料研究院 | 高密度氧化铌溅射靶材的制备方法 |
-
2014
- 2014-02-10 JP JP2014023246A patent/JP6403087B2/ja not_active Expired - Fee Related
- 2014-02-20 CN CN201480010227.2A patent/CN105074046A/zh active Pending
- 2014-02-20 KR KR1020157022703A patent/KR20150120996A/ko not_active Withdrawn
- 2014-02-20 WO PCT/JP2014/054004 patent/WO2014132872A1/ja not_active Ceased
- 2014-02-21 TW TW103105848A patent/TWI603938B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014132872A1 (ja) | 2014-09-04 |
| JP2014194072A (ja) | 2014-10-09 |
| TW201439032A (zh) | 2014-10-16 |
| KR20150120996A (ko) | 2015-10-28 |
| TWI603938B (zh) | 2017-11-01 |
| CN105074046A (zh) | 2015-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6403087B2 (ja) | 酸化ニオブスパッタリングターゲット及びその製造方法 | |
| JP4850378B2 (ja) | スパッタリングターゲット、透明導電性酸化物、およびスパッタリングターゲットの製造方法 | |
| JP4552950B2 (ja) | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 | |
| Zhang et al. | Application of ZrB2 thin film as a low emissivity film at high temperature | |
| US20120205242A1 (en) | Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET | |
| WO2011115177A1 (ja) | 透明導電膜 | |
| JP5381744B2 (ja) | 酸化物蒸着材と蒸着薄膜並びに太陽電池 | |
| JP2012515260A (ja) | ZnAlターゲットの作製方法およびそれにより作製されたZnAlターゲット | |
| JPWO2012105323A1 (ja) | 酸化物焼結体およびそれを加工したタブレット | |
| TW201609603A (zh) | 氧化物燒結體、濺鍍靶及薄膜以及氧化物燒結體的製造方法 | |
| CN105637114B (zh) | 溅射靶及溅射靶的制造方法 | |
| KR101293330B1 (ko) | Cu-In-Ga-Se 4 원계 합금 스퍼터링 타겟 | |
| Liu et al. | Effect of nitrogen partial pressure on the TCR of magnetron sputtered indium tin oxide thin films at high temperatures | |
| JP6023920B1 (ja) | 酸化物焼結体、酸化物スパッタリングターゲット及び酸化物薄膜 | |
| JP7715152B2 (ja) | Cr-Si-C系焼結体 | |
| JP2011074479A (ja) | 透明導電性酸化亜鉛系薄膜製造用のイオンプレーティング用ターゲット、および透明導電性酸化亜鉛系薄膜 | |
| JP5870768B2 (ja) | スパッタリングターゲットおよびその製造方法 | |
| JP5000230B2 (ja) | 酸化ランタン含有酸化物ターゲット | |
| JP2016017196A (ja) | Ti酸化物スパッタリングターゲット及びその製造方法 | |
| JP2015074789A (ja) | 酸化ニオブ系スパッタリングターゲット及びその製造方法 | |
| JP2003342068A (ja) | 酸化物焼結体 | |
| WO2019187269A1 (ja) | 酸化物焼結体、スパッタリングターゲットおよび透明導電膜 | |
| JP2025097483A (ja) | クロムシリサイド膜及びその製造方法 | |
| KR20150104682A (ko) | 산화물 스퍼터링 타겟 | |
| TW202035293A (zh) | 製造含氧化鉬層的濺鍍靶 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160929 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170802 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171205 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180119 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180215 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180228 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180820 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180902 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6403087 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |