TWI603938B - 氧化鈮濺鍍靶、其製造方法及氧化鈮膜 - Google Patents
氧化鈮濺鍍靶、其製造方法及氧化鈮膜 Download PDFInfo
- Publication number
- TWI603938B TWI603938B TW103105848A TW103105848A TWI603938B TW I603938 B TWI603938 B TW I603938B TW 103105848 A TW103105848 A TW 103105848A TW 103105848 A TW103105848 A TW 103105848A TW I603938 B TWI603938 B TW I603938B
- Authority
- TW
- Taiwan
- Prior art keywords
- cerium oxide
- sputtering target
- powder
- sputtering
- oxygen
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title claims description 101
- 238000000034 method Methods 0.000 title description 20
- 229910000484 niobium oxide Inorganic materials 0.000 title description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 title description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 175
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 175
- 239000000843 powder Substances 0.000 claims description 112
- 238000004544 sputter deposition Methods 0.000 claims description 71
- 229910052760 oxygen Inorganic materials 0.000 claims description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 48
- 239000001301 oxygen Substances 0.000 claims description 48
- 230000002950 deficient Effects 0.000 claims description 36
- 238000005245 sintering Methods 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 20
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 17
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 13
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 47
- 239000010955 niobium Substances 0.000 description 27
- 238000006722 reduction reaction Methods 0.000 description 26
- 230000009467 reduction Effects 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 19
- 238000005259 measurement Methods 0.000 description 18
- 239000002994 raw material Substances 0.000 description 16
- 206010021143 Hypoxia Diseases 0.000 description 15
- 238000007731 hot pressing Methods 0.000 description 11
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 10
- 238000002441 X-ray diffraction Methods 0.000 description 9
- 230000002159 abnormal effect Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 230000002706 hydrostatic effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- -1 for example Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/6265—Thermal treatment of powders or mixtures thereof other than sintering involving reduction or oxidation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
- C04B2235/3253—Substoichiometric niobium or tantalum oxides, e.g. NbO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013035575 | 2013-02-26 | ||
| JP2014023246A JP6403087B2 (ja) | 2013-02-26 | 2014-02-10 | 酸化ニオブスパッタリングターゲット及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201439032A TW201439032A (zh) | 2014-10-16 |
| TWI603938B true TWI603938B (zh) | 2017-11-01 |
Family
ID=51428143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103105848A TWI603938B (zh) | 2013-02-26 | 2014-02-21 | 氧化鈮濺鍍靶、其製造方法及氧化鈮膜 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6403087B2 (enExample) |
| KR (1) | KR20150120996A (enExample) |
| CN (1) | CN105074046A (enExample) |
| TW (1) | TWI603938B (enExample) |
| WO (1) | WO2014132872A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6273376B2 (ja) * | 2014-10-06 | 2018-01-31 | Ｊｘ金属株式会社 | ニオブ酸化物焼結体及び該焼結体からなるスパッタリングターゲット並びにニオブ酸化物焼結体の製造方法 |
| JP6492877B2 (ja) * | 2015-03-30 | 2019-04-03 | 東ソー株式会社 | 酸化物焼結体及びその製造方法 |
| CN105506737B (zh) * | 2015-12-28 | 2018-02-09 | 常州瞻驰光电科技有限公司 | 一种非化学计量比氧化铌多晶镀膜材料及其生长技术 |
| CN110963529B (zh) * | 2018-09-30 | 2021-12-07 | 中国科学院上海硅酸盐研究所 | 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用 |
| WO2020195121A1 (ja) | 2019-03-26 | 2020-10-01 | Ｊｘ金属株式会社 | ニオブスパッタリングターゲット |
| CN110467462A (zh) * | 2019-08-09 | 2019-11-19 | 宁夏中色新材料有限公司 | 一种高致密低电阻氧化铌旋转靶材及其制备方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2915177B2 (ja) * | 1990-11-30 | 1999-07-05 | 株式会社日立製作所 | スパッタリングターゲットの製造方法及びこの方法によって製造されたスパッタリングターゲット |
| JP2000113913A (ja) * | 1998-10-02 | 2000-04-21 | Sumitomo Osaka Cement Co Ltd | 色素増感型太陽電池 |
| JP2002338354A (ja) * | 2001-05-18 | 2002-11-27 | Kyocera Corp | 酸化ニオブ焼結体とその製造方法及びこれを用いたスパッタリングターゲット |
| JP2003098340A (ja) * | 2001-09-21 | 2003-04-03 | Asahi Glass Co Ltd | 光学多層干渉膜とその製造方法および光学多層干渉膜を用いたフィルター |
| JP2003123853A (ja) * | 2001-10-11 | 2003-04-25 | Bridgestone Corp | 有機色素増感型金属酸化物半導体電極及びその製造方法、並びにこの半導体電極を有する太陽電池 |
| JP2004059965A (ja) * | 2002-07-25 | 2004-02-26 | Toshiba Corp | スパッタリングターゲットおよびその製造方法 |
| JP4670097B2 (ja) * | 2005-04-27 | 2011-04-13 | Ａｇｃセラミックス株式会社 | ターゲットおよび該ターゲットによる高屈折率膜の製造方法 |
| CN101851740A (zh) * | 2009-04-02 | 2010-10-06 | 宜兴佰伦光电材料科技有限公司 | 用于磁控溅射镀膜的导电Nb2O5-x靶材及生产方法 |
| CN101864555A (zh) * | 2009-04-14 | 2010-10-20 | 上海高展金属材料有限公司 | 一种导电的氧化铌靶材、制备方法及其应用 |
| TWI385814B (zh) * | 2009-05-25 | 2013-02-11 | Ind Tech Res Inst | 光電致變色元件及其製作方法 |
| KR101137913B1 (ko) * | 2009-11-12 | 2012-05-03 | 삼성코닝정밀소재 주식회사 | 다상 Ｎｂ0ｘ 스퍼터링 타겟 및 그 제조방법 |
| JP5249963B2 (ja) * | 2010-02-01 | 2013-07-31 | 三井金属鉱業株式会社 | セラミックス−金属複合材料からなるスパッタリングターゲット材およびスパッタリングターゲット |
| KR101967945B1 (ko) * | 2010-04-26 | 2019-04-10 | 제이엑스금속주식회사 | Ｓｂ-Ｔｅ기 합금 소결체 스퍼터링 타깃 |
| JP2012126619A (ja) * | 2010-12-16 | 2012-07-05 | Sumitomo Chemical Co Ltd | 酸化亜鉛焼結体およびその製造方法 |
| JP5630416B2 (ja) * | 2011-03-23 | 2014-11-26 | 住友金属鉱山株式会社 | Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金粉末の製造方法 |
| JP5501306B2 (ja) * | 2011-08-18 | 2014-05-21 | 出光興産株式会社 | Ｉｎ−Ｇａ−Ｚｎ−Ｏ系スパッタリングターゲット |
| JP2012017258A (ja) * | 2011-10-05 | 2012-01-26 | Idemitsu Kosan Co Ltd | Ｉｎ−Ｇａ−Ｚｎ系酸化物スパッタリングターゲット |
| CN102659405B (zh) * | 2012-04-06 | 2014-02-26 | 西北稀有金属材料研究院 | 高密度氧化铌溅射靶材的制备方法 |
-
2014
- 2014-02-10 JP JP2014023246A patent/JP6403087B2/ja not_active Expired - Fee Related
- 2014-02-20 CN CN201480010227.2A patent/CN105074046A/zh active Pending
- 2014-02-20 KR KR1020157022703A patent/KR20150120996A/ko not_active Withdrawn
- 2014-02-20 WO PCT/JP2014/054004 patent/WO2014132872A1/ja not_active Ceased
- 2014-02-21 TW TW103105848A patent/TWI603938B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014132872A1 (ja) | 2014-09-04 |
| JP2014194072A (ja) | 2014-10-09 |
| JP6403087B2 (ja) | 2018-10-10 |
| TW201439032A (zh) | 2014-10-16 |
| KR20150120996A (ko) | 2015-10-28 |
| CN105074046A (zh) | 2015-11-18 |
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