JP6359567B2 - 空間分離原子層堆積のための装置およびプロセス閉じ込め - Google Patents
空間分離原子層堆積のための装置およびプロセス閉じ込め Download PDFInfo
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- 238000000231 atomic layer deposition Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title description 38
- 230000008569 process Effects 0.000 title description 28
- 239000000758 substrate Substances 0.000 claims description 125
- 238000009826 distribution Methods 0.000 claims description 84
- 238000010926 purge Methods 0.000 claims description 71
- 238000012545 processing Methods 0.000 claims description 43
- 230000033001 locomotion Effects 0.000 claims description 15
- 238000004891 communication Methods 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 385
- 239000002243 precursor Substances 0.000 description 27
- 238000005086 pumping Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 229940126062 Compound A Drugs 0.000 description 5
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012864 cross contamination Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012695 Ce precursor Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QWCKQJZIFLGMSD-UHFFFAOYSA-N alpha-aminobutyric acid Chemical compound CCC(N)C(O)=O QWCKQJZIFLGMSD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
AB AAB AAB (AAB)n...AABA
というパルス状シーケンスに遭遇し、その結果、Bという均一な膜組成物を形成する。シーケンスの終わりに第1の反応性ガスAに暴露することは、第2の反応性ガスBが後に続かないので、重要ではない。膜組成物は、Bと呼ばれているが、実際には、反応性ガスAと反応性ガスBの表面反応生成物のうちの1つの生成物であり、Bだけを使用するのは、膜の説明をするための便宜上であることが、当業者には理解されよう。
Claims (16)
- 長さ、幅、左側、右側、および前面を有する本体と、
前記本体の前記前面に開口のある複数の細長ガスポートであって、前記本体の前記幅に沿って延在する細長ガスポートと、
前記本体の前記長さに沿って、前記本体の前記左側に隣接して延在し、前記複数の細長ガスポートのうちの少なくとも一部の境界となる、左ガスカーテンチャネルと、
前記本体の前記長さに沿って、前記本体の前記右側に隣接して延在し、前記複数の細長ガスポートのうちの少なくとも一部の境界となる、右ガスカーテンチャネルと
を備え、
前記左ガスカーテンチャネルおよび前記右ガスカーテンチャネルのうち1つまたは複数が、パージガスカーテンチャネルおよび真空カーテンチャネルを備える、ガス分配プレート。 - 前記左ガスカーテンチャネルおよび前記右ガスカーテンチャネルのうち1つまたは複数が、全ての前記細長ガスポートの境界となる、請求項1に記載のガス分配プレート。
- 前記左ガスカーテンチャネルおよび前記右ガスカーテンチャネルのうち1つまたは複数が、全ての前記細長ガスポートよりも少ない細長ガスポートの境界となる、請求項1に記載のガス分配プレート。
- 前記左ガスカーテンチャネルおよび前記右ガスカーテンチャネルのうち1つまたは複数が、パージガスカーテンチャネルを備える、請求項1に記載のガス分配プレート。
- 前記左ガスカーテンチャネルおよび前記右ガスカーテンチャネルのうち1つまたは複数が、真空カーテンチャネルを備える、請求項1に記載のガス分配プレート。
- 前記複数の細長ガスポートが、第1の反応性ガスと流体連通する少なくとも1つの第1の反応性ガスポート、および前記第1の反応性ガスとは異なる第2の反応性ガスと流体連通する少なくとも1つの第2の反応性ガスポートを備える、請求項1に記載のガス分配プレート。
- 前記複数の細長ガスポートが、順番に、先頭の第1の反応性ガスポート、第2の反応性ガスポート、および末尾の第1の反応性ガスポートから基本的に成る、請求項6に記載のガス分配プレート。
- 前記複数の細長ガスポートがさらに、前記先頭の第1の反応性ガスポートと前記第2の反応性ガスポートとの間のパージガスポート、および前記第2の反応性ガスポートと前記末尾の第1の反応性ガスポートとの間のパージガスポートを備え、各パージガスポートが前記反応性ガスポートから、真空ポートによって分離される、請求項7に記載のガス分配プレート。
- 前記細長ガスポートが、順番に、真空ポート、パージガスポート、および別の真空ポートを、前記先頭の第1の反応性ガスポートの前、前記2つ目の第1の反応性ガスポートの後に備える、請求項8に記載のガス分配プレート。
- 前記複数の細長ガスポートが、第1の反応性ガスポートおよび第2の反応性ガスポートからなる反復ユニットを少なくとも1つ備える、請求項1に記載のガス分配プレート。
- 2から24の範囲内の反復ユニットがある、請求項10に記載のガス分配プレート。
- 処理チャンバと、
請求項1に記載のガス分配プレートと、
基板を、前記ガス分配プレートに対して、細長ガスインジェクタの軸と直角を成す軸に沿った前進後退運動で往復移動させるための基板キャリアと
を備える、原子層堆積システム。 - 前記基板キャリアが前記基板を回転させる、請求項12に記載の原子層堆積システム。
- 前記回転が連続的である、請求項13に記載の原子層堆積システム。
- 前記回転が離散的ステップの形をとる、請求項13に記載の原子層堆積システム。
- 前記基板キャリアが前記ガス分配プレートに隣接していないときに、各離散的ステップの回転が行われる、請求項15に記載の原子層堆積システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201361765899P | 2013-02-18 | 2013-02-18 | |
US61/765,899 | 2013-02-18 | ||
PCT/US2014/016924 WO2014127363A1 (en) | 2013-02-18 | 2014-02-18 | Apparatus and process containment for spatially separated atomic layer deposition |
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JP2016511797A JP2016511797A (ja) | 2016-04-21 |
JP6359567B2 true JP6359567B2 (ja) | 2018-07-18 |
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US (1) | US20150368798A1 (ja) |
JP (1) | JP6359567B2 (ja) |
KR (2) | KR102403666B1 (ja) |
CN (1) | CN105026614A (ja) |
TW (1) | TWI624560B (ja) |
WO (1) | WO2014127363A1 (ja) |
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-
2014
- 2014-02-13 TW TW103104765A patent/TWI624560B/zh active
- 2014-02-18 KR KR1020217023600A patent/KR102403666B1/ko active IP Right Grant
- 2014-02-18 US US14/766,670 patent/US20150368798A1/en not_active Abandoned
- 2014-02-18 JP JP2015558200A patent/JP6359567B2/ja active Active
- 2014-02-18 WO PCT/US2014/016924 patent/WO2014127363A1/en active Application Filing
- 2014-02-18 CN CN201480008701.8A patent/CN105026614A/zh active Pending
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Publication number | Publication date |
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WO2014127363A1 (en) | 2014-08-21 |
TWI624560B (zh) | 2018-05-21 |
US20150368798A1 (en) | 2015-12-24 |
JP2016511797A (ja) | 2016-04-21 |
KR20150119005A (ko) | 2015-10-23 |
KR20210095963A (ko) | 2021-08-03 |
CN105026614A (zh) | 2015-11-04 |
KR102403666B1 (ko) | 2022-05-30 |
TW201437426A (zh) | 2014-10-01 |
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