JP6324184B2 - 光電変換装置、撮像システム、および光電変換装置の駆動方法 - Google Patents

光電変換装置、撮像システム、および光電変換装置の駆動方法 Download PDF

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Publication number
JP6324184B2
JP6324184B2 JP2014086685A JP2014086685A JP6324184B2 JP 6324184 B2 JP6324184 B2 JP 6324184B2 JP 2014086685 A JP2014086685 A JP 2014086685A JP 2014086685 A JP2014086685 A JP 2014086685A JP 6324184 B2 JP6324184 B2 JP 6324184B2
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Japan
Prior art keywords
pixel
photoelectric conversion
reference pixel
conversion device
signal
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JP2014086685A
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English (en)
Japanese (ja)
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JP2015207880A5 (https=
JP2015207880A (ja
Inventor
善一 山崎
善一 山崎
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2014086685A priority Critical patent/JP6324184B2/ja
Priority to SG10201502596PA priority patent/SG10201502596PA/en
Priority to KR1020150047215A priority patent/KR101818063B1/ko
Priority to PH12015000106A priority patent/PH12015000106B1/en
Priority to DE102015105753.0A priority patent/DE102015105753A1/de
Priority to US14/687,654 priority patent/US9627425B2/en
Priority to MYPI2015001004A priority patent/MY175892A/en
Priority to CN201510181906.2A priority patent/CN105049751B/zh
Priority to GB1506534.5A priority patent/GB2525320B/en
Priority to CN201910177912.9A priority patent/CN109887945B/zh
Publication of JP2015207880A publication Critical patent/JP2015207880A/ja
Priority to US15/452,462 priority patent/US10283556B2/en
Publication of JP2015207880A5 publication Critical patent/JP2015207880A5/ja
Priority to KR1020180000570A priority patent/KR101905541B1/ko
Application granted granted Critical
Publication of JP6324184B2 publication Critical patent/JP6324184B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
JP2014086685A 2014-04-18 2014-04-18 光電変換装置、撮像システム、および光電変換装置の駆動方法 Active JP6324184B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2014086685A JP6324184B2 (ja) 2014-04-18 2014-04-18 光電変換装置、撮像システム、および光電変換装置の駆動方法
SG10201502596PA SG10201502596PA (en) 2014-04-18 2015-04-01 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device
KR1020150047215A KR101818063B1 (ko) 2014-04-18 2015-04-03 광전 변환장치, 촬상 시스템, 및 광전 변환장치의 구동방법
PH12015000106A PH12015000106B1 (en) 2014-04-18 2015-04-10 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device
US14/687,654 US9627425B2 (en) 2014-04-18 2015-04-15 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device
DE102015105753.0A DE102015105753A1 (de) 2014-04-18 2015-04-15 Photoelektrische umwandlungsvorrichtung, bildaufnahmesystem, und ansteuerverfahren der photoelektrischen umwandlungsvorrichtung
MYPI2015001004A MY175892A (en) 2014-04-18 2015-04-16 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device
CN201510181906.2A CN105049751B (zh) 2014-04-18 2015-04-17 光电转换器件、光电转换装置和图像拾取系统
GB1506534.5A GB2525320B (en) 2014-04-18 2015-04-17 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device
CN201910177912.9A CN109887945B (zh) 2014-04-18 2015-04-17 光电转换器件、图像拾取系统和光电转换器件的驱动方法
US15/452,462 US10283556B2 (en) 2014-04-18 2017-03-07 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device
KR1020180000570A KR101905541B1 (ko) 2014-04-18 2018-01-03 광전 변환장치, 및 촬상 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014086685A JP6324184B2 (ja) 2014-04-18 2014-04-18 光電変換装置、撮像システム、および光電変換装置の駆動方法

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JP2018071659A Division JP6679646B2 (ja) 2018-04-03 2018-04-03 光電変換装置、撮像システム、および光電変換装置の駆動方法

Publications (3)

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JP2015207880A JP2015207880A (ja) 2015-11-19
JP2015207880A5 JP2015207880A5 (https=) 2017-04-27
JP6324184B2 true JP6324184B2 (ja) 2018-05-16

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Country Status (9)

Country Link
US (2) US9627425B2 (https=)
JP (1) JP6324184B2 (https=)
KR (2) KR101818063B1 (https=)
CN (2) CN105049751B (https=)
DE (1) DE102015105753A1 (https=)
GB (1) GB2525320B (https=)
MY (1) MY175892A (https=)
PH (1) PH12015000106B1 (https=)
SG (1) SG10201502596PA (https=)

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US11812187B2 (en) 2021-05-28 2023-11-07 Varex Imaging Corporation Combined imaging array and strip
US11750944B2 (en) * 2021-05-28 2023-09-05 Varex Imaging Corporation Pixel noise cancellation system

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Also Published As

Publication number Publication date
CN105049751B (zh) 2019-03-29
PH12015000106B1 (en) 2018-04-18
KR20150120858A (ko) 2015-10-28
CN109887945A (zh) 2019-06-14
KR101905541B1 (ko) 2018-10-08
DE102015105753A1 (de) 2015-10-22
US10283556B2 (en) 2019-05-07
KR101818063B1 (ko) 2018-01-12
MY175892A (en) 2020-07-14
KR20180005719A (ko) 2018-01-16
JP2015207880A (ja) 2015-11-19
US9627425B2 (en) 2017-04-18
US20170179188A1 (en) 2017-06-22
GB201506534D0 (en) 2015-06-03
GB2525320B (en) 2019-02-27
US20150303232A1 (en) 2015-10-22
PH12015000106A1 (en) 2016-10-17
GB2525320A (en) 2015-10-21
CN109887945B (zh) 2023-04-25
SG10201502596PA (en) 2015-11-27
CN105049751A (zh) 2015-11-11

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