PH12015000106B1 - Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device - Google Patents

Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device Download PDF

Info

Publication number
PH12015000106B1
PH12015000106B1 PH12015000106A PH12015000106A PH12015000106B1 PH 12015000106 B1 PH12015000106 B1 PH 12015000106B1 PH 12015000106 A PH12015000106 A PH 12015000106A PH 12015000106 A PH12015000106 A PH 12015000106A PH 12015000106 B1 PH12015000106 B1 PH 12015000106B1
Authority
PH
Philippines
Prior art keywords
signal
pixel
reference pixel
photoelectric conversion
conversion device
Prior art date
Application number
PH12015000106A
Other languages
English (en)
Other versions
PH12015000106A1 (en
Inventor
Yamazaki Yoshikazu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of PH12015000106A1 publication Critical patent/PH12015000106A1/en
Publication of PH12015000106B1 publication Critical patent/PH12015000106B1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8057Optical shielding
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/32Transforming X-rays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898Indirect radiation image sensors, e.g. using luminescent members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/191Photoconductor image sensors
    • H10F39/195X-ray, gamma-ray or corpuscular radiation imagers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
PH12015000106A 2014-04-18 2015-04-10 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device PH12015000106B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014086685A JP6324184B2 (ja) 2014-04-18 2014-04-18 光電変換装置、撮像システム、および光電変換装置の駆動方法

Publications (2)

Publication Number Publication Date
PH12015000106A1 PH12015000106A1 (en) 2016-10-17
PH12015000106B1 true PH12015000106B1 (en) 2018-04-18

Family

ID=53298736

Family Applications (1)

Application Number Title Priority Date Filing Date
PH12015000106A PH12015000106B1 (en) 2014-04-18 2015-04-10 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device

Country Status (9)

Country Link
US (2) US9627425B2 (https=)
JP (1) JP6324184B2 (https=)
KR (2) KR101818063B1 (https=)
CN (2) CN105049751B (https=)
DE (1) DE102015105753A1 (https=)
GB (1) GB2525320B (https=)
MY (1) MY175892A (https=)
PH (1) PH12015000106B1 (https=)
SG (1) SG10201502596PA (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108702471B (zh) * 2016-02-29 2021-10-22 索尼公司 固态摄像装置
US10547803B2 (en) 2016-09-30 2020-01-28 Canon Kabushiki Kaisha Imaging apparatuses, systems, and moving imaging objects
US10473798B2 (en) * 2017-06-16 2019-11-12 Varex Imaging Corporation Counting and integrating pixels, detectors, and methods
US11812187B2 (en) 2021-05-28 2023-11-07 Varex Imaging Corporation Combined imaging array and strip
US11750944B2 (en) * 2021-05-28 2023-09-05 Varex Imaging Corporation Pixel noise cancellation system

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0530432A (ja) * 1991-07-19 1993-02-05 Sharp Corp 固体撮像装置
JPH05115046A (ja) * 1991-10-22 1993-05-07 Olympus Optical Co Ltd 固体撮像素子
US5521639A (en) * 1992-04-30 1996-05-28 Sony Corporation Solid-state imaging apparatus including a reference pixel in the optically-black region
JP3223570B2 (ja) 1992-04-30 2001-10-29 ソニー株式会社 固体撮像装置
EP1143706A3 (en) * 2000-03-28 2007-08-01 Fujitsu Limited Image sensor with black level control and low power consumption
US6958776B2 (en) * 2000-07-12 2005-10-25 Vanguard International Semiconductor Corp. Method and apparatus of controlling a pixel reset level for reducing an image lag in a CMOS sensor
JP4681774B2 (ja) * 2001-08-30 2011-05-11 キヤノン株式会社 撮像素子、その撮像素子を用いた撮像装置、及びその撮像装置を用いた撮像システム
WO2003054922A2 (en) * 2001-12-21 2003-07-03 Koninklijke Philips Electronics N.V. Image pick-up device and camera system comprising an image pick-up device
JP3828443B2 (ja) * 2002-03-22 2006-10-04 株式会社東芝 赤外線撮像装置及びその製造方法
JP4242691B2 (ja) * 2003-04-15 2009-03-25 オリンパス株式会社 固体撮像装置
JP4517660B2 (ja) * 2004-02-09 2010-08-04 ソニー株式会社 固体撮像装置、画像入力装置および固体撮像素子の駆動方法
JP4479373B2 (ja) * 2004-06-28 2010-06-09 ソニー株式会社 イメージセンサ
JP4508891B2 (ja) * 2005-01-28 2010-07-21 キヤノン株式会社 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置
JP4947908B2 (ja) * 2005-02-21 2012-06-06 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法および撮像装置
EP1881699A1 (en) * 2005-05-11 2008-01-23 Matsushita Electric Industrial Co., Ltd. Solid-state imaging pickup device, camera, automobile and monitoring device
JP4827508B2 (ja) 2005-12-02 2011-11-30 キヤノン株式会社 撮像システム
KR20080064031A (ko) * 2007-01-03 2008-07-08 삼성전자주식회사 온도센서를 구비한 이미지 센서 및 그것의 구동 방법
JP2008172330A (ja) * 2007-01-09 2008-07-24 Matsushita Electric Ind Co Ltd 固体撮像装置及び撮像装置
EP1944963B1 (en) 2007-01-12 2011-11-30 STMicroelectronics (Research & Development) Limited Image Sensor Systems Having Improved Noise Performance
JP5034610B2 (ja) 2007-03-30 2012-09-26 ソニー株式会社 固体撮像装置、固体撮像装置の信号処理方法および撮像装置
JP5406473B2 (ja) * 2007-07-19 2014-02-05 キヤノン株式会社 放射線検出装置
US7479916B1 (en) 2007-08-03 2009-01-20 Tower Semiconductor Ltd. High resolution column-based analog-to-digital converter with wide input voltage range for dental X-ray CMOS image sensor
EP2079229B1 (en) 2008-01-10 2011-09-14 Stmicroelectronics Sa Pixel circuit for global electronic shutter
JP5151507B2 (ja) * 2008-01-29 2013-02-27 ソニー株式会社 固体撮像素子、固体撮像素子の信号読み出し方法および撮像装置
JP5311987B2 (ja) 2008-11-27 2013-10-09 キヤノン株式会社 撮像装置
JP5511203B2 (ja) * 2009-03-16 2014-06-04 キヤノン株式会社 撮像素子及び撮像装置
JP5322816B2 (ja) 2009-07-15 2013-10-23 キヤノン株式会社 撮像装置およびその制御方法
US20110032391A1 (en) * 2009-08-04 2011-02-10 Himax Imaging, Inc. Image Sensor with Peripheral Dummy Pixels
JP5274420B2 (ja) * 2009-09-24 2013-08-28 キヤノン株式会社 光電変換装置および撮像システム
JP5211008B2 (ja) * 2009-10-07 2013-06-12 本田技研工業株式会社 光電変換素子、受光装置、受光システム及び測距装置
JP5436139B2 (ja) * 2009-10-20 2014-03-05 キヤノン株式会社 撮像装置
JP5499789B2 (ja) * 2010-03-11 2014-05-21 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
JP5542091B2 (ja) * 2010-05-18 2014-07-09 富士フイルム株式会社 固体撮像素子及び撮像装置
KR20120058057A (ko) 2010-11-29 2012-06-07 삼성전자주식회사 오프셋 제거 회로, 샘플링 회로 및 이미지 센서
JP5757096B2 (ja) * 2011-01-31 2015-07-29 ソニー株式会社 放射線撮像装置および放射線撮像表示システム
JP6021344B2 (ja) * 2011-05-12 2016-11-09 キヤノン株式会社 固体撮像装置、固体撮像装置の駆動方法、固体撮像システム
JP5871496B2 (ja) * 2011-06-24 2016-03-01 キヤノン株式会社 撮像装置及びその駆動方法
JP5999921B2 (ja) 2012-02-24 2016-09-28 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像表示システム
JP5847737B2 (ja) * 2012-03-30 2016-01-27 キヤノン株式会社 光電変換装置および撮像システム
US9420208B2 (en) * 2012-07-13 2016-08-16 Canon Kabushiki Kaisha Driving method for image pickup apparatus and driving method for image pickup system
CN103681720A (zh) * 2013-12-18 2014-03-26 格科微电子(上海)有限公司 图像传感器及其背光校准方法

Also Published As

Publication number Publication date
CN105049751B (zh) 2019-03-29
KR20150120858A (ko) 2015-10-28
CN109887945A (zh) 2019-06-14
KR101905541B1 (ko) 2018-10-08
DE102015105753A1 (de) 2015-10-22
US10283556B2 (en) 2019-05-07
KR101818063B1 (ko) 2018-01-12
MY175892A (en) 2020-07-14
KR20180005719A (ko) 2018-01-16
JP2015207880A (ja) 2015-11-19
US9627425B2 (en) 2017-04-18
US20170179188A1 (en) 2017-06-22
GB201506534D0 (en) 2015-06-03
JP6324184B2 (ja) 2018-05-16
GB2525320B (en) 2019-02-27
US20150303232A1 (en) 2015-10-22
PH12015000106A1 (en) 2016-10-17
GB2525320A (en) 2015-10-21
CN109887945B (zh) 2023-04-25
SG10201502596PA (en) 2015-11-27
CN105049751A (zh) 2015-11-11

Similar Documents

Publication Publication Date Title
US9025074B2 (en) Image capturing apparatus and method for controlling the same
CN105518862B (zh) 固态成像器件、固态成像器件的驱动方法及电子装置
US8823851B2 (en) Image capturing apparatus and control method for image capturing apparatus
US9247126B2 (en) Image pickup device and focus detection apparatus
US9544493B2 (en) Solid-state imaging apparatus and imaging system using the same
US10283556B2 (en) Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device
US11716554B2 (en) Solid-state imaging device and method for driving the same, and electronic apparatus
US9648222B2 (en) Image capturing apparatus that controls supply of amperage when reading out pixel signals and method for controlling the same
US20250080866A1 (en) Image sensor and image-capturing device including adjustment unit for reducing capacitance
US9635241B2 (en) Image capturing apparatus and method of controlling image capturing apparatus
EP2334055A2 (en) Photoelectric-conversion device
US11683582B2 (en) Imaging apparatus, method for controlling imaging apparatus, and storage medium
JP2016092594A (ja) 撮像装置及び固体撮像素子の駆動方法
JP6679646B2 (ja) 光電変換装置、撮像システム、および光電変換装置の駆動方法
JP6366341B2 (ja) 撮像装置
US20260129320A1 (en) Solid-state imaging device and driving method thereof, and electronic apparatus
US20240276118A1 (en) Imaging element and imaging device
US7978243B2 (en) Imaging apparatus, driving method thereof, and imaging system