DE102015105753A1 - Photoelektrische umwandlungsvorrichtung, bildaufnahmesystem, und ansteuerverfahren der photoelektrischen umwandlungsvorrichtung - Google Patents

Photoelektrische umwandlungsvorrichtung, bildaufnahmesystem, und ansteuerverfahren der photoelektrischen umwandlungsvorrichtung Download PDF

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Publication number
DE102015105753A1
DE102015105753A1 DE102015105753.0A DE102015105753A DE102015105753A1 DE 102015105753 A1 DE102015105753 A1 DE 102015105753A1 DE 102015105753 A DE102015105753 A DE 102015105753A DE 102015105753 A1 DE102015105753 A1 DE 102015105753A1
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Prior art keywords
signal
photoelectric conversion
reference pixel
conversion device
pixel
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DE102015105753.0A
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German (de)
English (en)
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c/o CANON KABUSHIKI KAISH Yamazaki Yoshikazu
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
DE102015105753.0A 2014-04-18 2015-04-15 Photoelektrische umwandlungsvorrichtung, bildaufnahmesystem, und ansteuerverfahren der photoelektrischen umwandlungsvorrichtung Pending DE102015105753A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-086685 2014-04-18
JP2014086685A JP6324184B2 (ja) 2014-04-18 2014-04-18 光電変換装置、撮像システム、および光電変換装置の駆動方法

Publications (1)

Publication Number Publication Date
DE102015105753A1 true DE102015105753A1 (de) 2015-10-22

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DE102015105753.0A Pending DE102015105753A1 (de) 2014-04-18 2015-04-15 Photoelektrische umwandlungsvorrichtung, bildaufnahmesystem, und ansteuerverfahren der photoelektrischen umwandlungsvorrichtung

Country Status (9)

Country Link
US (2) US9627425B2 (https=)
JP (1) JP6324184B2 (https=)
KR (2) KR101818063B1 (https=)
CN (2) CN105049751B (https=)
DE (1) DE102015105753A1 (https=)
GB (1) GB2525320B (https=)
MY (1) MY175892A (https=)
PH (1) PH12015000106B1 (https=)
SG (1) SG10201502596PA (https=)

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Publication number Priority date Publication date Assignee Title
CN108702471B (zh) * 2016-02-29 2021-10-22 索尼公司 固态摄像装置
US10547803B2 (en) 2016-09-30 2020-01-28 Canon Kabushiki Kaisha Imaging apparatuses, systems, and moving imaging objects
US10473798B2 (en) * 2017-06-16 2019-11-12 Varex Imaging Corporation Counting and integrating pixels, detectors, and methods
US11812187B2 (en) 2021-05-28 2023-11-07 Varex Imaging Corporation Combined imaging array and strip
US11750944B2 (en) * 2021-05-28 2023-09-05 Varex Imaging Corporation Pixel noise cancellation system

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Also Published As

Publication number Publication date
CN105049751B (zh) 2019-03-29
PH12015000106B1 (en) 2018-04-18
KR20150120858A (ko) 2015-10-28
CN109887945A (zh) 2019-06-14
KR101905541B1 (ko) 2018-10-08
US10283556B2 (en) 2019-05-07
KR101818063B1 (ko) 2018-01-12
MY175892A (en) 2020-07-14
KR20180005719A (ko) 2018-01-16
JP2015207880A (ja) 2015-11-19
US9627425B2 (en) 2017-04-18
US20170179188A1 (en) 2017-06-22
GB201506534D0 (en) 2015-06-03
JP6324184B2 (ja) 2018-05-16
GB2525320B (en) 2019-02-27
US20150303232A1 (en) 2015-10-22
PH12015000106A1 (en) 2016-10-17
GB2525320A (en) 2015-10-21
CN109887945B (zh) 2023-04-25
SG10201502596PA (en) 2015-11-27
CN105049751A (zh) 2015-11-11

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