SG10201502596PA - Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device - Google Patents

Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device

Info

Publication number
SG10201502596PA
SG10201502596PA SG10201502596PA SG10201502596PA SG10201502596PA SG 10201502596P A SG10201502596P A SG 10201502596PA SG 10201502596P A SG10201502596P A SG 10201502596PA SG 10201502596P A SG10201502596P A SG 10201502596PA SG 10201502596P A SG10201502596P A SG 10201502596PA
Authority
SG
Singapore
Prior art keywords
photoelectric conversion
conversion device
image pickup
driving method
pickup system
Prior art date
Application number
SG10201502596PA
Other languages
English (en)
Inventor
Yamazaki Yoshikazu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG10201502596PA publication Critical patent/SG10201502596PA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
SG10201502596PA 2014-04-18 2015-04-01 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device SG10201502596PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014086685A JP6324184B2 (ja) 2014-04-18 2014-04-18 光電変換装置、撮像システム、および光電変換装置の駆動方法

Publications (1)

Publication Number Publication Date
SG10201502596PA true SG10201502596PA (en) 2015-11-27

Family

ID=53298736

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201502596PA SG10201502596PA (en) 2014-04-18 2015-04-01 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device

Country Status (9)

Country Link
US (2) US9627425B2 (https=)
JP (1) JP6324184B2 (https=)
KR (2) KR101818063B1 (https=)
CN (2) CN105049751B (https=)
DE (1) DE102015105753A1 (https=)
GB (1) GB2525320B (https=)
MY (1) MY175892A (https=)
PH (1) PH12015000106B1 (https=)
SG (1) SG10201502596PA (https=)

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CN108702471B (zh) * 2016-02-29 2021-10-22 索尼公司 固态摄像装置
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US10473798B2 (en) * 2017-06-16 2019-11-12 Varex Imaging Corporation Counting and integrating pixels, detectors, and methods
US11812187B2 (en) 2021-05-28 2023-11-07 Varex Imaging Corporation Combined imaging array and strip
US11750944B2 (en) * 2021-05-28 2023-09-05 Varex Imaging Corporation Pixel noise cancellation system

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Also Published As

Publication number Publication date
CN105049751B (zh) 2019-03-29
PH12015000106B1 (en) 2018-04-18
KR20150120858A (ko) 2015-10-28
CN109887945A (zh) 2019-06-14
KR101905541B1 (ko) 2018-10-08
DE102015105753A1 (de) 2015-10-22
US10283556B2 (en) 2019-05-07
KR101818063B1 (ko) 2018-01-12
MY175892A (en) 2020-07-14
KR20180005719A (ko) 2018-01-16
JP2015207880A (ja) 2015-11-19
US9627425B2 (en) 2017-04-18
US20170179188A1 (en) 2017-06-22
GB201506534D0 (en) 2015-06-03
JP6324184B2 (ja) 2018-05-16
GB2525320B (en) 2019-02-27
US20150303232A1 (en) 2015-10-22
PH12015000106A1 (en) 2016-10-17
GB2525320A (en) 2015-10-21
CN109887945B (zh) 2023-04-25
CN105049751A (zh) 2015-11-11

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