CN105049751B - 光电转换器件、光电转换装置和图像拾取系统 - Google Patents
光电转换器件、光电转换装置和图像拾取系统 Download PDFInfo
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- CN105049751B CN105049751B CN201510181906.2A CN201510181906A CN105049751B CN 105049751 B CN105049751 B CN 105049751B CN 201510181906 A CN201510181906 A CN 201510181906A CN 105049751 B CN105049751 B CN 105049751B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
- H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image Input (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910177912.9A CN109887945B (zh) | 2014-04-18 | 2015-04-17 | 光电转换器件、图像拾取系统和光电转换器件的驱动方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-086685 | 2014-04-18 | ||
| JP2014086685A JP6324184B2 (ja) | 2014-04-18 | 2014-04-18 | 光電変換装置、撮像システム、および光電変換装置の駆動方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910177912.9A Division CN109887945B (zh) | 2014-04-18 | 2015-04-17 | 光电转换器件、图像拾取系统和光电转换器件的驱动方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105049751A CN105049751A (zh) | 2015-11-11 |
| CN105049751B true CN105049751B (zh) | 2019-03-29 |
Family
ID=53298736
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510181906.2A Active CN105049751B (zh) | 2014-04-18 | 2015-04-17 | 光电转换器件、光电转换装置和图像拾取系统 |
| CN201910177912.9A Active CN109887945B (zh) | 2014-04-18 | 2015-04-17 | 光电转换器件、图像拾取系统和光电转换器件的驱动方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910177912.9A Active CN109887945B (zh) | 2014-04-18 | 2015-04-17 | 光电转换器件、图像拾取系统和光电转换器件的驱动方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US9627425B2 (https=) |
| JP (1) | JP6324184B2 (https=) |
| KR (2) | KR101818063B1 (https=) |
| CN (2) | CN105049751B (https=) |
| DE (1) | DE102015105753A1 (https=) |
| GB (1) | GB2525320B (https=) |
| MY (1) | MY175892A (https=) |
| PH (1) | PH12015000106B1 (https=) |
| SG (1) | SG10201502596PA (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108702471B (zh) * | 2016-02-29 | 2021-10-22 | 索尼公司 | 固态摄像装置 |
| US10547803B2 (en) | 2016-09-30 | 2020-01-28 | Canon Kabushiki Kaisha | Imaging apparatuses, systems, and moving imaging objects |
| US10473798B2 (en) * | 2017-06-16 | 2019-11-12 | Varex Imaging Corporation | Counting and integrating pixels, detectors, and methods |
| US11812187B2 (en) | 2021-05-28 | 2023-11-07 | Varex Imaging Corporation | Combined imaging array and strip |
| US11750944B2 (en) * | 2021-05-28 | 2023-09-05 | Varex Imaging Corporation | Pixel noise cancellation system |
Citations (5)
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| US5521639A (en) * | 1992-04-30 | 1996-05-28 | Sony Corporation | Solid-state imaging apparatus including a reference pixel in the optically-black region |
| CN101262553A (zh) * | 2007-01-03 | 2008-09-10 | 三星电子株式会社 | 具有温度传感器的图像传感器及其驱动方法 |
| CN101841666A (zh) * | 2009-03-16 | 2010-09-22 | 佳能株式会社 | 图像传感器和摄像设备 |
| CN102209212A (zh) * | 2008-01-29 | 2011-10-05 | 索尼株式会社 | 固态图像传感装置、读出其信号的方法以及摄像装置 |
| CN103681720A (zh) * | 2013-12-18 | 2014-03-26 | 格科微电子(上海)有限公司 | 图像传感器及其背光校准方法 |
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| JPH0530432A (ja) * | 1991-07-19 | 1993-02-05 | Sharp Corp | 固体撮像装置 |
| JPH05115046A (ja) * | 1991-10-22 | 1993-05-07 | Olympus Optical Co Ltd | 固体撮像素子 |
| JP3223570B2 (ja) | 1992-04-30 | 2001-10-29 | ソニー株式会社 | 固体撮像装置 |
| EP1143706A3 (en) * | 2000-03-28 | 2007-08-01 | Fujitsu Limited | Image sensor with black level control and low power consumption |
| US6958776B2 (en) * | 2000-07-12 | 2005-10-25 | Vanguard International Semiconductor Corp. | Method and apparatus of controlling a pixel reset level for reducing an image lag in a CMOS sensor |
| JP4681774B2 (ja) * | 2001-08-30 | 2011-05-11 | キヤノン株式会社 | 撮像素子、その撮像素子を用いた撮像装置、及びその撮像装置を用いた撮像システム |
| WO2003054922A2 (en) * | 2001-12-21 | 2003-07-03 | Koninklijke Philips Electronics N.V. | Image pick-up device and camera system comprising an image pick-up device |
| JP3828443B2 (ja) * | 2002-03-22 | 2006-10-04 | 株式会社東芝 | 赤外線撮像装置及びその製造方法 |
| JP4242691B2 (ja) * | 2003-04-15 | 2009-03-25 | オリンパス株式会社 | 固体撮像装置 |
| JP4517660B2 (ja) * | 2004-02-09 | 2010-08-04 | ソニー株式会社 | 固体撮像装置、画像入力装置および固体撮像素子の駆動方法 |
| JP4479373B2 (ja) * | 2004-06-28 | 2010-06-09 | ソニー株式会社 | イメージセンサ |
| JP4508891B2 (ja) * | 2005-01-28 | 2010-07-21 | キヤノン株式会社 | 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置 |
| JP4947908B2 (ja) * | 2005-02-21 | 2012-06-06 | ソニー株式会社 | 固体撮像素子、固体撮像素子の駆動方法および撮像装置 |
| EP1881699A1 (en) * | 2005-05-11 | 2008-01-23 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging pickup device, camera, automobile and monitoring device |
| JP4827508B2 (ja) | 2005-12-02 | 2011-11-30 | キヤノン株式会社 | 撮像システム |
| JP2008172330A (ja) * | 2007-01-09 | 2008-07-24 | Matsushita Electric Ind Co Ltd | 固体撮像装置及び撮像装置 |
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| JP5034610B2 (ja) | 2007-03-30 | 2012-09-26 | ソニー株式会社 | 固体撮像装置、固体撮像装置の信号処理方法および撮像装置 |
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-
2014
- 2014-04-18 JP JP2014086685A patent/JP6324184B2/ja active Active
-
2015
- 2015-04-01 SG SG10201502596PA patent/SG10201502596PA/en unknown
- 2015-04-03 KR KR1020150047215A patent/KR101818063B1/ko active Active
- 2015-04-10 PH PH12015000106A patent/PH12015000106B1/en unknown
- 2015-04-15 US US14/687,654 patent/US9627425B2/en active Active
- 2015-04-15 DE DE102015105753.0A patent/DE102015105753A1/de active Pending
- 2015-04-16 MY MYPI2015001004A patent/MY175892A/en unknown
- 2015-04-17 GB GB1506534.5A patent/GB2525320B/en active Active
- 2015-04-17 CN CN201510181906.2A patent/CN105049751B/zh active Active
- 2015-04-17 CN CN201910177912.9A patent/CN109887945B/zh active Active
-
2017
- 2017-03-07 US US15/452,462 patent/US10283556B2/en active Active
-
2018
- 2018-01-03 KR KR1020180000570A patent/KR101905541B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5521639A (en) * | 1992-04-30 | 1996-05-28 | Sony Corporation | Solid-state imaging apparatus including a reference pixel in the optically-black region |
| CN101262553A (zh) * | 2007-01-03 | 2008-09-10 | 三星电子株式会社 | 具有温度传感器的图像传感器及其驱动方法 |
| CN102209212A (zh) * | 2008-01-29 | 2011-10-05 | 索尼株式会社 | 固态图像传感装置、读出其信号的方法以及摄像装置 |
| CN101841666A (zh) * | 2009-03-16 | 2010-09-22 | 佳能株式会社 | 图像传感器和摄像设备 |
| CN103681720A (zh) * | 2013-12-18 | 2014-03-26 | 格科微电子(上海)有限公司 | 图像传感器及其背光校准方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| PH12015000106B1 (en) | 2018-04-18 |
| KR20150120858A (ko) | 2015-10-28 |
| CN109887945A (zh) | 2019-06-14 |
| KR101905541B1 (ko) | 2018-10-08 |
| DE102015105753A1 (de) | 2015-10-22 |
| US10283556B2 (en) | 2019-05-07 |
| KR101818063B1 (ko) | 2018-01-12 |
| MY175892A (en) | 2020-07-14 |
| KR20180005719A (ko) | 2018-01-16 |
| JP2015207880A (ja) | 2015-11-19 |
| US9627425B2 (en) | 2017-04-18 |
| US20170179188A1 (en) | 2017-06-22 |
| GB201506534D0 (en) | 2015-06-03 |
| JP6324184B2 (ja) | 2018-05-16 |
| GB2525320B (en) | 2019-02-27 |
| US20150303232A1 (en) | 2015-10-22 |
| PH12015000106A1 (en) | 2016-10-17 |
| GB2525320A (en) | 2015-10-21 |
| CN109887945B (zh) | 2023-04-25 |
| SG10201502596PA (en) | 2015-11-27 |
| CN105049751A (zh) | 2015-11-11 |
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