GB2525320B - Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device - Google Patents

Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device

Info

Publication number
GB2525320B
GB2525320B GB1506534.5A GB201506534A GB2525320B GB 2525320 B GB2525320 B GB 2525320B GB 201506534 A GB201506534 A GB 201506534A GB 2525320 B GB2525320 B GB 2525320B
Authority
GB
United Kingdom
Prior art keywords
photoelectric conversion
conversion device
image pickup
driving method
pickup system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1506534.5A
Other languages
English (en)
Other versions
GB201506534D0 (en
GB2525320A (en
Inventor
Yamazaki Yoshikazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB201506534D0 publication Critical patent/GB201506534D0/en
Publication of GB2525320A publication Critical patent/GB2525320A/en
Application granted granted Critical
Publication of GB2525320B publication Critical patent/GB2525320B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image Input (AREA)
GB1506534.5A 2014-04-18 2015-04-17 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device Active GB2525320B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014086685A JP6324184B2 (ja) 2014-04-18 2014-04-18 光電変換装置、撮像システム、および光電変換装置の駆動方法

Publications (3)

Publication Number Publication Date
GB201506534D0 GB201506534D0 (en) 2015-06-03
GB2525320A GB2525320A (en) 2015-10-21
GB2525320B true GB2525320B (en) 2019-02-27

Family

ID=53298736

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1506534.5A Active GB2525320B (en) 2014-04-18 2015-04-17 Photoelectric conversion device, image pickup system, and driving method of the photoelectric conversion device

Country Status (9)

Country Link
US (2) US9627425B2 (https=)
JP (1) JP6324184B2 (https=)
KR (2) KR101818063B1 (https=)
CN (2) CN105049751B (https=)
DE (1) DE102015105753A1 (https=)
GB (1) GB2525320B (https=)
MY (1) MY175892A (https=)
PH (1) PH12015000106B1 (https=)
SG (1) SG10201502596PA (https=)

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CN108702471B (zh) * 2016-02-29 2021-10-22 索尼公司 固态摄像装置
US10547803B2 (en) 2016-09-30 2020-01-28 Canon Kabushiki Kaisha Imaging apparatuses, systems, and moving imaging objects
US10473798B2 (en) * 2017-06-16 2019-11-12 Varex Imaging Corporation Counting and integrating pixels, detectors, and methods
US11812187B2 (en) 2021-05-28 2023-11-07 Varex Imaging Corporation Combined imaging array and strip
US11750944B2 (en) * 2021-05-28 2023-09-05 Varex Imaging Corporation Pixel noise cancellation system

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US7479916B1 (en) * 2007-08-03 2009-01-20 Tower Semiconductor Ltd. High resolution column-based analog-to-digital converter with wide input voltage range for dental X-ray CMOS image sensor
EP2079229A1 (en) * 2008-01-10 2009-07-15 Stmicroelectronics Sa Pixel circuit for global electronic shutter
US20100128148A1 (en) * 2008-11-27 2010-05-27 Canon Kabushiki Kaisha Image pickup sensor, driving method therefor, and image pickup apparatus
US20110013052A1 (en) * 2009-07-15 2011-01-20 Canon Kabushiki Kaisha Image capturing apparatus and control method therefor
US20120133800A1 (en) * 2010-11-29 2012-05-31 Samsung Electronics Co., Ltd. Offset Canceling Circuit, Sampling Circuit and Image Sensor
US20120200842A1 (en) * 2009-10-07 2012-08-09 Honda Motor Co., Ltd. Photoelectric conversion element, light receiving device, light receiving system, and distance measuring device

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US20050128326A1 (en) * 2001-12-21 2005-06-16 Korthout Alouisius W.M. Image pick-up device and camera system comprising an image pick-up device
US20040262492A1 (en) * 2003-04-15 2004-12-30 Seisuke Matsuda Solid-state image sensing apparatus
US20060007331A1 (en) * 2004-06-28 2006-01-12 Sony Corporation Image sensor
US20070126886A1 (en) * 2005-12-02 2007-06-07 Canon Kabushiki Kaisha Solid-state image pickup apparatus
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EP2079229A1 (en) * 2008-01-10 2009-07-15 Stmicroelectronics Sa Pixel circuit for global electronic shutter
US20100128148A1 (en) * 2008-11-27 2010-05-27 Canon Kabushiki Kaisha Image pickup sensor, driving method therefor, and image pickup apparatus
US20110013052A1 (en) * 2009-07-15 2011-01-20 Canon Kabushiki Kaisha Image capturing apparatus and control method therefor
US20120200842A1 (en) * 2009-10-07 2012-08-09 Honda Motor Co., Ltd. Photoelectric conversion element, light receiving device, light receiving system, and distance measuring device
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Also Published As

Publication number Publication date
CN105049751B (zh) 2019-03-29
PH12015000106B1 (en) 2018-04-18
KR20150120858A (ko) 2015-10-28
CN109887945A (zh) 2019-06-14
KR101905541B1 (ko) 2018-10-08
DE102015105753A1 (de) 2015-10-22
US10283556B2 (en) 2019-05-07
KR101818063B1 (ko) 2018-01-12
MY175892A (en) 2020-07-14
KR20180005719A (ko) 2018-01-16
JP2015207880A (ja) 2015-11-19
US9627425B2 (en) 2017-04-18
US20170179188A1 (en) 2017-06-22
GB201506534D0 (en) 2015-06-03
JP6324184B2 (ja) 2018-05-16
US20150303232A1 (en) 2015-10-22
PH12015000106A1 (en) 2016-10-17
GB2525320A (en) 2015-10-21
CN109887945B (zh) 2023-04-25
SG10201502596PA (en) 2015-11-27
CN105049751A (zh) 2015-11-11

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