JP6323557B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6323557B2 JP6323557B2 JP2016534314A JP2016534314A JP6323557B2 JP 6323557 B2 JP6323557 B2 JP 6323557B2 JP 2016534314 A JP2016534314 A JP 2016534314A JP 2016534314 A JP2016534314 A JP 2016534314A JP 6323557 B2 JP6323557 B2 JP 6323557B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- cooler
- semiconductor device
- bolt
- bottom plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 73
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000003507 refrigerant Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- -1 fluororesin Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
2、52 冷却器
3、53 外部導電端子
4 第1貫通孔
5、55 樹脂枠
6 第2貫通孔
7 ブロック
8、81 貫通孔
9、59 天板
10 第3貫通孔
11 絶縁層
12、62 フィン
13、63 底板
13a 凹部
13b 側部
16 ナット部
16a ネジ穴
17、67、84 ボルト
18 軸部
19 頭部
20、70 冷媒流路
21、71 保護部材
22、72 蓋
23、73 半導体チップ
24、74 DCB基板
25、75 外部配線
54 第1固定用孔
57 ナット部
82 金属筒
83 第2固定用孔
100、500 半導体装置
L、Lo 横の長さ
M、Mo 縦の長さ
ΔL=(Lo−L)/2
Claims (4)
- 半導体モジュールと冷却器とをボルトで接合した半導体装置において、
前記半導体モジュールには、第1貫通孔を有する外部導電端子と、前記第1貫通孔に連通して前記第1貫通孔の下方に配置された第2貫通孔とが設けられ、
前記冷却器は、前記第2貫通孔と連通する第3貫通孔を有しフィンが固着された天板と、前記フィンを収納し冷媒流路をなす凹部および該凹部を囲む側部を有する底板とを有し、
前記冷却器の前記側部には、前記第3貫通孔に整合する雌ネジのネジ穴が設けられ、
前記ボルトは、前記第1貫通孔よりも外径の大きい頭部と、該頭部より延出され、前記第1貫通孔、前記第2貫通孔および前記第3貫通孔に挿通されて、前記ネジ穴に螺合して締結される軸部とを有し、
前記外部導電端子は、前記ボルトを介して前記冷却器に導通しないように構成されており、
前記第2貫通孔は、前記半導体モジュールの外壁をなす樹脂枠に穿設されており、前記第2貫通孔の上部は内径を拡げた貫通孔になっており、金属ブロックが埋め込まれていることを特徴とする半導体装置。 - 前記ボルトと、前記冷却器の天板と、前記冷却器の底板とが金属であり、
前記ネジ穴が、前記冷却器の側部に埋め込まれた絶縁材のナットに螺設されているネジ穴であり、
前記第3貫通孔の内面に絶縁層を有する、請求項1に記載の半導体装置。 - 前記ボルトが絶縁材であり、
前記冷却器の天板と底板が金属であり、
前記ネジ穴が、前記冷却器の側部に埋め込まれた絶縁材のナットに螺設されているネジ穴である、請求項1に記載の半導体装置。 - 前記ボルトが絶縁材であり、
前記冷却器の天板と底板が金属であり、
前記ネジ穴が、前記冷却器の底板に直接螺設されているネジ穴である、請求項1に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014146999 | 2014-07-17 | ||
JP2014146999 | 2014-07-17 | ||
PCT/JP2015/065350 WO2016009725A1 (ja) | 2014-07-17 | 2015-05-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016009725A1 JPWO2016009725A1 (ja) | 2017-04-27 |
JP6323557B2 true JP6323557B2 (ja) | 2018-05-16 |
Family
ID=55078228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016534314A Active JP6323557B2 (ja) | 2014-07-17 | 2015-05-28 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9704776B2 (ja) |
JP (1) | JP6323557B2 (ja) |
WO (1) | WO2016009725A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105531819B (zh) * | 2014-03-14 | 2018-05-08 | 富士电机株式会社 | 冷却器及具有该冷却器的半导体装置 |
CN110637362B (zh) * | 2017-05-24 | 2023-06-02 | 三菱电机株式会社 | 半导体封装件 |
JP6973256B2 (ja) * | 2018-04-12 | 2021-11-24 | トヨタ自動車株式会社 | 半導体装置 |
US11145571B2 (en) * | 2019-06-04 | 2021-10-12 | Semiconductor Components Industries, Llc | Heat transfer for power modules |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4204248A (en) * | 1978-11-20 | 1980-05-20 | General Electric Company | Heat transfer mounting arrangement for a solid state device connected to a circuit board |
JPH0723966Y2 (ja) * | 1988-12-06 | 1995-05-31 | 横河電機株式会社 | 低い熱抵抗を有する電気部品の放熱構造 |
US5283467A (en) * | 1992-06-05 | 1994-02-01 | Eaton Corporation | Heat sink mounting system for semiconductor devices |
JPH10229149A (ja) * | 1997-02-14 | 1998-08-25 | Toyota Autom Loom Works Ltd | 半導体装置 |
JP3813098B2 (ja) * | 2002-02-14 | 2006-08-23 | 三菱電機株式会社 | 電力用半導体モジュール |
JP2004103936A (ja) * | 2002-09-11 | 2004-04-02 | Mitsubishi Electric Corp | 電力半導体装置およびその製造方法 |
JP2005064291A (ja) | 2003-08-14 | 2005-03-10 | Nissan Motor Co Ltd | 絶縁シートおよびこの絶縁シートを用いた半導体装置組立体 |
JP2007150214A (ja) | 2005-11-25 | 2007-06-14 | Thermal Components Inc | ヒートシンクの固定方法および固定クリップ |
JP4738192B2 (ja) | 2006-02-08 | 2011-08-03 | 株式会社東芝 | 電力変換器用冷却器 |
JP5581792B2 (ja) * | 2010-04-30 | 2014-09-03 | 日産自動車株式会社 | 電子モジュール及び電子モジュール取付け構造 |
JP5257817B2 (ja) | 2010-06-15 | 2013-08-07 | 三菱電機株式会社 | 半導体装置 |
JP2012028552A (ja) * | 2010-07-23 | 2012-02-09 | Nissan Motor Co Ltd | 半導体モジュールのケース構造 |
US8519532B2 (en) | 2011-09-12 | 2013-08-27 | Infineon Technologies Ag | Semiconductor device including cladded base plate |
CN103930991B (zh) * | 2011-12-08 | 2018-05-22 | 富士电机株式会社 | 半导体器件及半导体器件制造方法 |
-
2015
- 2015-05-28 JP JP2016534314A patent/JP6323557B2/ja active Active
- 2015-05-28 WO PCT/JP2015/065350 patent/WO2016009725A1/ja active Application Filing
-
2016
- 2016-07-08 US US15/205,655 patent/US9704776B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9704776B2 (en) | 2017-07-11 |
WO2016009725A1 (ja) | 2016-01-21 |
JPWO2016009725A1 (ja) | 2017-04-27 |
US20160322278A1 (en) | 2016-11-03 |
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