JP6129355B2 - 電力半導体装置 - Google Patents
電力半導体装置 Download PDFInfo
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- JP6129355B2 JP6129355B2 JP2015556691A JP2015556691A JP6129355B2 JP 6129355 B2 JP6129355 B2 JP 6129355B2 JP 2015556691 A JP2015556691 A JP 2015556691A JP 2015556691 A JP2015556691 A JP 2015556691A JP 6129355 B2 JP6129355 B2 JP 6129355B2
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- 239000004065 semiconductor Substances 0.000 title claims description 161
- 230000002093 peripheral effect Effects 0.000 claims description 73
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229920005989 resin Polymers 0.000 description 25
- 239000011347 resin Substances 0.000 description 25
- 230000017525 heat dissipation Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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Description
図1は、本発明の実施の形態1に係る電力半導体装置の構成を示す上面図であり、図2は当該構成を示すXZ平面に沿った断面図である。この電力半導体装置は、金属(例えば銅)からなるリードフレーム1a,1b,1c,1dと、パワーチップなどの電力用の半導体素子(以下「電力半導体素子」と記す)2と、IC(Integrated Circuit)チップなどの制御用の半導体素子(以下「制御半導体素子」と記す)3と、第1ワイヤ4と、第2ワイヤ5と、絶縁部材である絶縁層6と、導電板7と、これらを封止するモールド樹脂8とを備えている。
図5は、本発明の実施の形態2に係る電力半導体装置の構成を示す上面図であり、図6は当該構成を示すXZ平面に沿った断面図である。なお、本実施の形態2に係る電力半導体装置において、以上で説明した構成要素と同一または類似するものについては同じ参照符号を付し、異なる点を中心に以下説明する。
図8は、本発明の実施の形態3に係る電力半導体装置の構成を示すXZ平面に沿った示す断面図である。なお、本実施の形態3に係る電力半導体装置の構成を示す上面図は、実施の形態1,2の構成を示した上面図(図1,図5)と同様である。本実施の形態3に係る電力半導体装置において、以上で説明した構成要素と同一または類似するものについては同じ参照符号を付し、異なる点を中心に以下説明する。
図9は、本発明の実施の形態4に係る電力半導体装置の構成を示す上面図であり、図10は当該構成を示すXZ平面に沿った断面図である。なお、本実施の形態4に係る電力半導体装置において、以上で説明した構成要素と同一または類似するものについては同じ参照符号を付し、異なる点を中心に以下説明する。
図11は、本発明の実施の形態5に係る電力半導体装置の構成を示す上面図である。本実施の形態5に係る電力半導体装置において、以上で説明した構成要素と同一または類似するものについては同じ参照符号を付し、異なる点を中心に以下説明する。
図13は、本発明の実施の形態6に係る電力半導体装置の構成を示す上面図である。本実施の形態6に係る電力半導体装置において、以上で説明した構成要素と同一または類似するものについては同じ参照符号を付し、異なる点を中心に以下説明する。
Claims (4)
- リードフレーム(1a)と、
前記リードフレーム(1a)の第1主面上に配設された電力用の半導体素子(2)と、
前記リードフレーム(1a)の前記第1主面と逆側の第2主面上に配設された絶縁部材(6)と
を備え、
前記第2主面にて前記絶縁部材(6)が配設された領域の外周線である絶縁領域外周線の全部の線が、
前記第1主面にて前記半導体素子(2)が配設された領域の外周線を、前記リードフレーム(1a)の厚み分だけ広げた場合に得られる拡大外周線の全部の線と上面視にて一致する、電力半導体装置。 - 請求項1に記載の電力半導体装置であって、
複数の前記絶縁部材(6)が、1つの前記リードフレーム(1a)に配設された複数の前記半導体素子(2)と一対一に対応して、前記1つのリードフレーム(1a)の前記第2主面上に配設されている、電力半導体装置。 - 請求項1または請求項2に記載の電力半導体装置であって、
前記リードフレーム(1a)の端部が、前記絶縁部材(6)側から前記半導体素子(2)側に向かって曲げられている、電力半導体装置。 - 請求項1から請求項3のうちのいずれか1項に記載の電力半導体装置であって、
前記半導体素子(2)が配設されていない位置の前記第1主面と、前記絶縁部材(6)が配設されていない位置の前記第2主面とを貫通するスルーホール(11)が、前記リードフレーム(1a)に設けられている、電力半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/050319 WO2015104834A1 (ja) | 2014-01-10 | 2014-01-10 | 電力半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015104834A1 JPWO2015104834A1 (ja) | 2017-03-23 |
JP6129355B2 true JP6129355B2 (ja) | 2017-05-17 |
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DE102016112289B4 (de) * | 2016-07-05 | 2020-07-30 | Danfoss Silicon Power Gmbh | Leiterrahmen und Verfahren zur Herstellung desselben |
JP6770452B2 (ja) * | 2017-01-27 | 2020-10-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10629520B2 (en) * | 2017-05-29 | 2020-04-21 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10679929B2 (en) | 2017-07-28 | 2020-06-09 | Advanced Semiconductor Engineering Korea, Inc. | Semiconductor package device and method of manufacturing the same |
JP7134131B2 (ja) * | 2019-04-26 | 2022-09-09 | 三菱電機株式会社 | 半導体装置 |
JP7069082B2 (ja) * | 2019-05-08 | 2022-05-17 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
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JP3110298B2 (ja) * | 1995-10-31 | 2000-11-20 | 松下電子工業株式会社 | 半導体装置 |
US5869883A (en) * | 1997-09-26 | 1999-02-09 | Stanley Wang, President Pantronix Corp. | Packaging of semiconductor circuit in pre-molded plastic package |
JPH11233712A (ja) * | 1998-02-12 | 1999-08-27 | Hitachi Ltd | 半導体装置及びその製法とそれを使った電気機器 |
JP2000049271A (ja) * | 1998-07-31 | 2000-02-18 | Mitsubishi Electric Corp | 半導体装置 |
JP2001024093A (ja) * | 1999-07-09 | 2001-01-26 | Toshiba Corp | 半導体装置 |
JP2002110872A (ja) * | 2000-09-27 | 2002-04-12 | Kyocera Corp | 配線基板および配線基板モジュール |
US7061080B2 (en) * | 2001-06-11 | 2006-06-13 | Fairchild Korea Semiconductor Ltd. | Power module package having improved heat dissipating capability |
KR100723454B1 (ko) * | 2004-08-21 | 2007-05-30 | 페어차일드코리아반도체 주식회사 | 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법 |
JP3644428B2 (ja) * | 2001-11-30 | 2005-04-27 | 株式会社デンソー | パワーモジュールの実装構造 |
JP2004296726A (ja) | 2003-03-26 | 2004-10-21 | Kyocera Corp | 放熱部材および半導体素子収納用パッケージおよび半導体装置 |
US6921971B2 (en) | 2003-01-15 | 2005-07-26 | Kyocera Corporation | Heat releasing member, package for accommodating semiconductor element and semiconductor device |
KR101221807B1 (ko) * | 2006-12-29 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | 전력 소자 패키지 |
JP2009206406A (ja) | 2008-02-29 | 2009-09-10 | Mitsubishi Electric Corp | パワー半導体装置 |
JP4634498B2 (ja) * | 2008-11-28 | 2011-02-16 | 三菱電機株式会社 | 電力用半導体モジュール |
JP5051183B2 (ja) * | 2009-06-11 | 2012-10-17 | 三菱電機株式会社 | パワーモジュール |
JP5279632B2 (ja) | 2009-06-25 | 2013-09-04 | 三菱電機株式会社 | 半導体モジュール |
JP5402778B2 (ja) * | 2010-03-30 | 2014-01-29 | 株式会社デンソー | 半導体モジュールを備えた半導体装置 |
KR101222831B1 (ko) | 2011-09-16 | 2013-01-15 | 삼성전기주식회사 | 전력 모듈 패키지 |
JP2013138087A (ja) | 2011-12-28 | 2013-07-11 | Sanken Electric Co Ltd | 半導体モジュール及びその製造方法 |
JP2013182964A (ja) | 2012-03-01 | 2013-09-12 | Honda Motor Co Ltd | 半導体装置 |
DE112012006656B4 (de) | 2012-07-05 | 2021-08-05 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
JP2014099547A (ja) * | 2012-11-15 | 2014-05-29 | Mitsubishi Electric Corp | 電力半導体モジュールおよびその製造方法 |
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DE112014006142T5 (de) | 2016-09-29 |
CN105900234B (zh) | 2018-09-28 |
DE112014006142B4 (de) | 2024-01-18 |
US9627302B2 (en) | 2017-04-18 |
CN105900234A (zh) | 2016-08-24 |
WO2015104834A1 (ja) | 2015-07-16 |
US20160233151A1 (en) | 2016-08-11 |
KR101823805B1 (ko) | 2018-01-30 |
KR20160077119A (ko) | 2016-07-01 |
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