JP4760585B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
- Publication number
- JP4760585B2 JP4760585B2 JP2006196259A JP2006196259A JP4760585B2 JP 4760585 B2 JP4760585 B2 JP 4760585B2 JP 2006196259 A JP2006196259 A JP 2006196259A JP 2006196259 A JP2006196259 A JP 2006196259A JP 4760585 B2 JP4760585 B2 JP 4760585B2
- Authority
- JP
- Japan
- Prior art keywords
- case
- resin package
- power semiconductor
- semiconductor element
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000011347 resin Substances 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 36
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000003780 insertion Methods 0.000 claims description 4
- 230000037431 insertion Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Description
図1は、本発明の実施の形態1に係る電力用半導体装置を示す断面図である。リードフレーム11の表主面に、IGBTチップやダイオードなどの電力用半導体素子12と、制御ICなどの制御用半導体素子13とが搭載されている。そして、これらは互いにAlワイヤ14を介して電気的に接続されている。また、電力用半導体素子12はCu端子15を介して電力端子16に電気的に接続され、制御用半導体素子13はAlワイヤ14を介して制御端子17に電気的に接続されている。
図2は、本発明の実施の形態2に係る電力用半導体装置を示す断面図である。本実施の形態では、ヒートシンク19の外周縁は、樹脂パッケージ21の筐体の外周縁から突出し、インサートケース22の開口端緑にボルト24により結合されている。その他の構成は実施の形態1と同様である。
12 電力用半導体素子
13 制御用半導体素子
16 電力端子
17 制御端子
19 ヒートシンク
20 モールド樹脂
21 樹脂パッケージ
22 インサートケース
23 リード挿入口
24 ボルト
Claims (1)
- 電力用半導体素子及び制御用半導体素子をリードフレームの表主面に搭載してモールド樹脂で封止した樹脂パッケージと、
前記樹脂パッケージから導出され、前記電力用半導体素子と電気的に接続された電力端子と、
前記樹脂パッケージから導出され、前記制御用半導体素子と電気的に接続された制御端子と、
前記樹脂パッケージと分離可能に構成され、前記樹脂パッケージを囲繞する筒状のケースとを有し、
前記電力端子及び前記制御端子は、前記ケースの上面に設けられたリード挿入口からそれぞれ導出され、
前記電力端子の前記ケースから導出された部分は、前記ケースの端面に沿って折り曲げられ、
前記樹脂パッケージは、前記リードフレームの裏主面に配設され、外側面の一部が前記樹脂パッケージから露出しているヒートシンクを更に有し、
前記ヒートシンクの外周縁は、前記樹脂パッケージの筐体の外周縁から突出し、前記ケースの下面に設けられた開口端緑に嵌合されているか又は前記開口端緑にボルトにより結合されていることを特徴とする電力用半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006196259A JP4760585B2 (ja) | 2006-07-18 | 2006-07-18 | 電力用半導体装置 |
TW095143710A TWI334216B (en) | 2006-07-18 | 2006-11-27 | Power semiconductor apparatus |
US11/610,624 US7449726B2 (en) | 2006-07-18 | 2006-12-14 | Power semiconductor apparatus |
EP06026107.0A EP1881530B1 (en) | 2006-07-18 | 2006-12-15 | Power semiconductor apparatus |
KR1020070056555A KR100898774B1 (ko) | 2006-07-18 | 2007-06-11 | 전력용 반도체장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006196259A JP4760585B2 (ja) | 2006-07-18 | 2006-07-18 | 電力用半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008027993A JP2008027993A (ja) | 2008-02-07 |
JP4760585B2 true JP4760585B2 (ja) | 2011-08-31 |
Family
ID=38259385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006196259A Active JP4760585B2 (ja) | 2006-07-18 | 2006-07-18 | 電力用半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7449726B2 (ja) |
EP (1) | EP1881530B1 (ja) |
JP (1) | JP4760585B2 (ja) |
KR (1) | KR100898774B1 (ja) |
TW (1) | TWI334216B (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101221807B1 (ko) * | 2006-12-29 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | 전력 소자 패키지 |
CN201011655Y (zh) * | 2007-01-10 | 2008-01-23 | 上海凯虹科技电子有限公司 | 一种大功率半导体器件的框架 |
JP5112101B2 (ja) * | 2007-02-15 | 2013-01-09 | 株式会社東芝 | 半導体パッケージ |
SI2149902T1 (sl) * | 2007-05-18 | 2019-03-29 | Sansha Electric Manufacturing Company, Limited | Močnostni polprevodniški moduli in naprava za električni oblok, ki le-tega uporablja |
CN101681907B (zh) * | 2007-11-30 | 2012-11-07 | 松下电器产业株式会社 | 散热结构体基板和使用其的模块及散热结构体基板的制造方法 |
KR101454321B1 (ko) * | 2008-01-22 | 2014-10-23 | 페어차일드코리아반도체 주식회사 | 절연 금속 기판을 구비하는 반도체 패키지 및 그 제조방법 |
DE102008031231B4 (de) * | 2008-07-02 | 2012-12-27 | Siemens Aktiengesellschaft | Herstellungsverfahren für planare elektronsche Leistungselektronik-Module für Hochtemperatur-Anwendungen und entsprechendes Leistungselektronik-Modul |
TW201011869A (en) * | 2008-09-10 | 2010-03-16 | Cyntec Co Ltd | Chip package structure |
US8076696B2 (en) * | 2009-10-30 | 2011-12-13 | General Electric Company | Power module assembly with reduced inductance |
CN101834267B (zh) * | 2010-04-30 | 2013-07-10 | 深圳市奥伦德元器件有限公司 | 平面支架及封装方法 |
CN102340233B (zh) * | 2010-07-15 | 2014-05-07 | 台达电子工业股份有限公司 | 功率模块 |
JP2013016629A (ja) | 2011-07-04 | 2013-01-24 | Mitsubishi Electric Corp | 半導体モジュール |
JP5682511B2 (ja) * | 2011-08-31 | 2015-03-11 | サンケン電気株式会社 | 半導体モジュール |
US9147637B2 (en) | 2011-12-23 | 2015-09-29 | Infineon Technologies Ag | Module including a discrete device mounted on a DCB substrate |
US9136193B2 (en) | 2012-02-13 | 2015-09-15 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method of manufacturing the same |
US9190397B2 (en) | 2012-02-14 | 2015-11-17 | Mitsubishi Electric Corporation | Semiconductor device |
JP5656907B2 (ja) * | 2012-04-11 | 2015-01-21 | 三菱電機株式会社 | パワーモジュール |
JP5859906B2 (ja) * | 2012-04-20 | 2016-02-16 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP5863599B2 (ja) * | 2012-08-21 | 2016-02-16 | 三菱電機株式会社 | パワーモジュール |
KR101482317B1 (ko) | 2012-10-30 | 2015-01-13 | 삼성전기주식회사 | 단위 전력 모듈 및 이를 포함하는 전력 모듈 패키지 |
KR101443985B1 (ko) * | 2012-12-14 | 2014-11-03 | 삼성전기주식회사 | 전력 모듈 패키지 |
KR102034717B1 (ko) | 2013-02-07 | 2019-10-21 | 삼성전자주식회사 | 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈 |
CN105990265B (zh) * | 2015-02-26 | 2019-04-05 | 台达电子工业股份有限公司 | 功率转换电路的封装模块及其制造方法 |
JP6613806B2 (ja) * | 2015-10-23 | 2019-12-04 | 富士電機株式会社 | 半導体装置 |
DE112016006367B4 (de) * | 2016-02-04 | 2020-11-19 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
WO2018193581A1 (ja) * | 2017-04-20 | 2018-10-25 | 三菱電機株式会社 | 電力変換装置 |
JP6395164B1 (ja) * | 2017-04-20 | 2018-09-26 | 三菱電機株式会社 | 電力変換装置 |
US10679929B2 (en) | 2017-07-28 | 2020-06-09 | Advanced Semiconductor Engineering Korea, Inc. | Semiconductor package device and method of manufacturing the same |
JP6870531B2 (ja) * | 2017-08-21 | 2021-05-12 | 三菱電機株式会社 | パワーモジュールおよび電力変換装置 |
JP6939392B2 (ja) * | 2017-10-17 | 2021-09-22 | 三菱電機株式会社 | パワーモジュール |
WO2019116457A1 (ja) * | 2017-12-13 | 2019-06-20 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
DE102018214059A1 (de) * | 2018-08-21 | 2020-02-27 | Robert Bosch Gmbh | Gehäuserahmen für ein Steuergerät, welcher zur elektrischen Außenkontaktierung eines Schaltungsträgers des Steuergeräts geeignet ist |
US11081422B2 (en) * | 2019-03-14 | 2021-08-03 | Toyota Motor Engineering & Manufacturing North America, Inc. | Self-healing PDMS encapsulation and repair of power modules |
JP7168071B2 (ja) * | 2019-04-01 | 2022-11-09 | 富士電機株式会社 | 半導体モジュール |
KR102418409B1 (ko) * | 2020-06-30 | 2022-07-07 | 하나 세미컨덕터 (아유타야) 씨오., 엘티디 | 방열 클립을 구비한 전력 반도체 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0278265A (ja) * | 1988-09-14 | 1990-03-19 | Nippon Inter Electronics Corp | リードフレームおよびそのリードフレームを使用した複合半導体装置 |
JPH09153572A (ja) * | 1995-11-30 | 1997-06-10 | Mitsubishi Electric Corp | 半導体装置 |
JPH10125898A (ja) * | 1996-09-02 | 1998-05-15 | Fuji Electric Co Ltd | 無接点式半導体接触器 |
JP2003100987A (ja) * | 2001-09-20 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置 |
JP2004064081A (ja) * | 2003-08-08 | 2004-02-26 | Hitachi Ltd | 複合材料及びその用途 |
JP2006093255A (ja) * | 2004-09-22 | 2006-04-06 | Fuji Electric Device Technology Co Ltd | パワー半導体モジュールおよびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6279653A (ja) | 1985-10-03 | 1987-04-13 | Fujitsu Ltd | ハイブリツドicのパツケ−ジング構造 |
US6069401A (en) * | 1996-10-29 | 2000-05-30 | Kabushiki Kaisha Toshiba | Semiconductor chip |
JPH10335579A (ja) * | 1997-05-27 | 1998-12-18 | Toshiba Corp | 大電力半導体モジュール装置 |
JP2001085613A (ja) | 1999-09-13 | 2001-03-30 | Hitachi Ltd | トランスファモールド型パワーモジュール |
JP4262453B2 (ja) | 2002-07-15 | 2009-05-13 | 三菱電機株式会社 | 電力半導体装置 |
JP2006179856A (ja) * | 2004-11-25 | 2006-07-06 | Fuji Electric Holdings Co Ltd | 絶縁基板および半導体装置 |
-
2006
- 2006-07-18 JP JP2006196259A patent/JP4760585B2/ja active Active
- 2006-11-27 TW TW095143710A patent/TWI334216B/zh not_active IP Right Cessation
- 2006-12-14 US US11/610,624 patent/US7449726B2/en active Active
- 2006-12-15 EP EP06026107.0A patent/EP1881530B1/en active Active
-
2007
- 2007-06-11 KR KR1020070056555A patent/KR100898774B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0278265A (ja) * | 1988-09-14 | 1990-03-19 | Nippon Inter Electronics Corp | リードフレームおよびそのリードフレームを使用した複合半導体装置 |
JPH09153572A (ja) * | 1995-11-30 | 1997-06-10 | Mitsubishi Electric Corp | 半導体装置 |
JPH10125898A (ja) * | 1996-09-02 | 1998-05-15 | Fuji Electric Co Ltd | 無接点式半導体接触器 |
JP2003100987A (ja) * | 2001-09-20 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置 |
JP2004064081A (ja) * | 2003-08-08 | 2004-02-26 | Hitachi Ltd | 複合材料及びその用途 |
JP2006093255A (ja) * | 2004-09-22 | 2006-04-06 | Fuji Electric Device Technology Co Ltd | パワー半導体モジュールおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20080008218A (ko) | 2008-01-23 |
TW200807678A (en) | 2008-02-01 |
US20080017882A1 (en) | 2008-01-24 |
KR100898774B1 (ko) | 2009-05-20 |
EP1881530A1 (en) | 2008-01-23 |
EP1881530B1 (en) | 2016-03-16 |
JP2008027993A (ja) | 2008-02-07 |
TWI334216B (en) | 2010-12-01 |
US7449726B2 (en) | 2008-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4760585B2 (ja) | 電力用半導体装置 | |
JP6119313B2 (ja) | 半導体装置 | |
KR101505552B1 (ko) | 복합 반도체 패키지 및 그 제조방법 | |
CN106487252B (zh) | 半导体装置、智能功率模块及电力转换装置 | |
US9837338B2 (en) | Semiconductor module with mounting case and method for manufacturing the same | |
US7701054B2 (en) | Power semiconductor module and method for its manufacture | |
US10163752B2 (en) | Semiconductor device | |
US11004756B2 (en) | Semiconductor device | |
WO2013118275A1 (ja) | 半導体装置 | |
JP4305356B2 (ja) | 半導体装置 | |
JP5257229B2 (ja) | 半導体装置およびヒートシンク | |
JP5172290B2 (ja) | 半導体装置 | |
KR101265046B1 (ko) | 반도체장치 | |
JP4688751B2 (ja) | 半導体装置 | |
JP2015185835A (ja) | 半導体装置及びその製造方法 | |
JPWO2015145752A1 (ja) | 半導体モジュールおよび半導体モジュールを搭載した駆動装置 | |
JP6907670B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP4333505B2 (ja) | 半導体装置 | |
JP7145798B2 (ja) | 半導体装置の製造方法および半導体装置 | |
JP6131875B2 (ja) | 半導体パッケージ | |
JP2010177453A (ja) | 半導体装置 | |
ITMI20111214A1 (it) | Dispositivo di potenza a spessore ridotto | |
KR20220129587A (ko) | 파워 모듈 패키지 및 패키징 기술들 | |
JP2005354118A (ja) | 混成集積回路装置 | |
JP2008140979A (ja) | パッケージ型半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090114 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110406 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110510 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110523 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140617 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4760585 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |