JP2008027993A - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

Info

Publication number
JP2008027993A
JP2008027993A JP2006196259A JP2006196259A JP2008027993A JP 2008027993 A JP2008027993 A JP 2008027993A JP 2006196259 A JP2006196259 A JP 2006196259A JP 2006196259 A JP2006196259 A JP 2006196259A JP 2008027993 A JP2008027993 A JP 2008027993A
Authority
JP
Japan
Prior art keywords
case
resin package
power semiconductor
power
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006196259A
Other languages
English (en)
Other versions
JP4760585B2 (ja
Inventor
Hidetoshi Nakanishi
英俊 中西
Toshitaka Sekine
敏孝 関根
Taichi Obara
太一 小原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2006196259A priority Critical patent/JP4760585B2/ja
Priority to TW095143710A priority patent/TWI334216B/zh
Priority to US11/610,624 priority patent/US7449726B2/en
Priority to EP06026107.0A priority patent/EP1881530B1/en
Priority to KR1020070056555A priority patent/KR100898774B1/ko
Publication of JP2008027993A publication Critical patent/JP2008027993A/ja
Application granted granted Critical
Publication of JP4760585B2 publication Critical patent/JP4760585B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

【課題】ケース型の電力用半導体装置において、生産性に優れ、かつケースの再利用が容易なリサイクル性に優れた電力用半導体装置を得る。
【解決手段】電力用半導体素子及び制御用半導体素子をリードフレームの表主面に搭載してモールド樹脂で封止した樹脂パッケージと、樹脂パッケージから導出され、電力用半導体素子と電気的に接続された電力端子と、樹脂パッケージから導出され、制御用半導体素子と電気的に接続された制御端子と、樹脂パッケージと分離可能に構成され、樹脂パッケージを囲繞する筒状のケースとを有し、電力端子及び制御端子は、ケースに設けられたリード挿入口からそれぞれ導出され、電力端子のケースから導出された部分は、ケースの端面に沿って折り曲げられている。
【選択図】図１

Description

本発明は、電力用半導体素子及び制御用半導体素子をケースで囲繞するケース型の電力用半導体装置に関し、特に生産性に優れ、かつケースの再利用が容易なリサイクル性に優れた電力用半導体装置に関するものである。
近年、産業用モータコントロールやサーボ用途に使用されるＩＧＢＴモジュール（InsuIated Gate Bipolar Transistor）は、ＩＰＭ化の要求が高くなっている。ここで、ＩＰＭは、電力を制御するパワーＭＯＳＦＥＴやＩＧＢＴなどのパワーデバイスの駆動回路や自己保護機能を組み込んだパワーモジュールである。
民生用としてモールド型ＩＰＭが使用されている。このモールド型ＩＰＭは、ＩＣとパワー半導体チップ（ＩＧＢＴ、ダイオード）をＣｕフレームにダイマウントし、エポキシモールド樹脂で固めたものである。また、モールド型ＩＰＭにヒートシンクを設けて放熱性を向上させたものも提案されている（例えば、特許文献１参照）。
一方、産業用小・中容量ＩＰＭ（６００Ｖ／５０Ａ以上）としてケース型ＩＰＭが使用されている。図３は、従来のケース型ＩＰＭを示す断面図であり、図４はその上面図である。インサートケース１内には、電力用半導体素子としてＩＧＢＴチップ２及びダイオード３が搭載された絶縁基板４と、制御用半導体素子として制御ＩＣ、抵抗及びコンデンサを搭載した実装基板５が組み込まれている。そして、これらは互いにＡｌワイヤ６で接続されている。
また、ＩＧＢＴチップ２及びダイオード３は、インサートケース１に内蔵された電力端子７を介して外部に接続される。そして、実装基板５は、インサートケース１に内蔵された制御端子８を介して外部に接続される。また、ＩＧＢＴチップ２及びダイオード３からの熱を放熱するために、絶縁基板４の裏面にＣｕベース９が形成されている。そして、インサートケース１の四隅にはケースリング１０が設けられている。
特開２００１−０８５６１３号公報
しかし、ケース型ＩＰＭは、モールド型ＩＰＭと比較して、部品点数が多く、組立コストが高いため生産性が劣っていた。また、ケース型ＩＰＭにおいて、モールド型ＩＰＭと同様にケース内に樹脂を充填した場合、ケースを再利用することができなくなるという問題があった。
本発明は、上述のような課題を解決するためになされたもので、その目的は、ケース型の電力用半導体装置において、生産性に優れ、かつケースの再利用が容易なリサイクル性に優れた電力用半導体装置を得るものである。
本発明に係る電力用半導体装置は、電力用半導体素子及び制御用半導体素子をリードフレームの表主面に搭載してモールド樹脂で封止した樹脂パッケージと、樹脂パッケージから導出され、電力用半導体素子と電気的に接続された電力端子と、樹脂パッケージから導出され、制御用半導体素子と電気的に接続された制御端子と、樹脂パッケージと分離可能に構成され、樹脂パッケージを囲繞する筒状のケースとを有し、電力端子及び制御端子は、ケースに設けられたリード挿入口からそれぞれ導出され、電力端子のケースから導出された部分は、ケースの端面に沿って折り曲げられている。本発明のその他の特徴は以下に明らかにする。
本発明により、ケース型の電力用半導体装置において、生産性に優れ、かつケースの再利用が容易なリサイクル性に優れた電力用半導体装置を得ることができる。
実施の形態１．
図１は、本発明の実施の形態１に係る電力用半導体装置を示す断面図である。リードフレーム１１の表主面に、ＩＧＢＴチップやダイオードなどの電力用半導体素子１２と、制御ＩＣなどの制御用半導体素子１３とが搭載されている。そして、これらは互いにＡｌワイヤ１４を介して電気的に接続されている。また、電力用半導体素子１２はＣｕ端子１５を介して電力端子１６に電気的に接続され、制御用半導体素子１３はＡｌワイヤ１４を介して制御端子１７に電気的に接続されている。
そして、リードフレーム１１の裏主面に、絶縁シート１８を介してヒートシンク１９が配設されている。これらをモールド樹脂２０で封止することで樹脂パッケージ２１が形成されている。また、電力端子１６及び制御端子１７は樹脂パッケージ２１から導出されている。そして、ヒートシンク１９の外側面の一部は樹脂パッケージ２１から露出している。このヒートシンク１９により、樹脂パッケージ２１の放熱性を高めることができる。具体的には６００Ｖ／５０Ａで熱抵抗が０．６℃／Ｗであり、従来のケース型ＩＰＭと同程度の熱抵抗を達成できる。なお、ヒートシンク１９の固定手段は必要ではない。
樹脂パッケージ２１は、プラスチックからなる筒状のインサートケース２２により囲繞されている。そして、電力端子１６及び制御端子１７は、インサートケース２２に設けられたリード挿入口２３からそれぞれ導出されている。さらに、電力端子１６のインサートケース２２から導出された部分は、インサートケース２２の端面に沿って折り曲げられている。なお、この電力端子１６の折り曲げ部に外部配線（不図示）を接触させ、両者にねじを貫通させることにより、両者を接続する。
以上説明したように、一部にモールド型ＩＰＭの構造を採用したことにより、従来のケース型ＩＰＭに比べて組立部品の削減とコスト低減が可能になり、生産性に優れた電力用半導体装置を得ることができる。さらに、本実施の形態に係る電力用半導体装置は、従来のケース型ＩＰＭと電力端子・制御端子の位置が外形上変わらないため、顧客は従来のケース型ＩＰＭと同じ組み込み方法で対応することができ、装置を変更する必要がない。
また、インサートケース２２内にモールド樹脂２０を充填せずに、インサートケース２２を樹脂パッケージ２１と分離可能に構成している。これにより、電力用半導体素子１２や制御用半導体素子１３等が損傷した場合に、樹脂パッケージ２１のみを交換することができる。従って、ケースの再利用が容易なリサイクル性に優れた電力用半導体装置を得ることができる。
また、ヒートシンク１９の外周縁は、樹脂パッケージ２１の筐体の外周縁から突出し、インサートケース２２の開口端緑に嵌合されている。これにより、樹脂パッケージ２１をインサートケース２２に固定する固定手段を必要としないため、組立性、即ち生産性に優れた電力用半導体装置を提供することができる。
実施の形態２．
図２は、本発明の実施の形態２に係る電力用半導体装置を示す断面図である。本実施の形態では、ヒートシンク１９の外周縁は、樹脂パッケージ２１の筐体の外周縁から突出し、インサートケース２２の開口端緑にボルト２４により結合されている。その他の構成は実施の形態１と同様である。
これにより、部品点数が少なく、組立性、即ち生産性に優れた電力用半導体装置を提供することができる。また、実施の形態１よりも樹脂パッケージとケースの取り付け強度が強くなる。
本発明の実施の形態１に係る電力用半導体装置を示す断面図である。 本発明の実施の形態２に係る電力用半導体装置を示す断面図である。 従来のケース型ＩＰＭを示す断面図である 従来のケース型ＩＰＭを示す上面図である。
符号の説明
１１ リードフレーム
１２ 電力用半導体素子
１３ 制御用半導体素子
１６ 電力端子
１７ 制御端子
１９ ヒートシンク
２０ モールド樹脂
２１ 樹脂パッケージ
２２ インサートケース
２３ リード挿入口
２４ ボルト

Claims (4)

  1. 電力用半導体素子及び制御用半導体素子をリードフレームの表主面に搭載してモールド樹脂で封止した樹脂パッケージと、
    前記樹脂パッケージから導出され、前記電力用半導体素子と電気的に接続された電力端子と、
    前記樹脂パッケージから導出され、前記制御用半導体素子と電気的に接続された制御端子と、
    前記樹脂パッケージと分離可能に構成され、前記樹脂パッケージを囲繞する筒状のケースとを有し、
    前記電力端子及び前記制御端子は、前記ケースに設けられたリード挿入口からそれぞれ導出され、
    前記電力端子の前記ケースから導出された部分は、前記ケースの端面に沿って折り曲げられていることを特徴とする電力用半導体装置。
  2. 前記樹脂パッケージは、前記リードフレームの裏主面に配設され、外側面の一部が前記樹脂パッケージから露出しているヒートシンクを更に有することを特徴とする請求項１に記載の電力用半導体装置。
  3. 前記ヒートシンクの外周縁は、前記樹脂パッケージの筐体の外周縁から突出し、前記ケースの開口端緑に嵌合されていることを特徴とする請求項２に記載の電力用半導体装置。
  4. 前記ヒートシンクの外周縁は、前記樹脂パッケージの筐体の外周縁から突出し、前記ケースの開口端緑にボルトにより結合されていることを特徴とする請求項２に記載の電力用半導体装置。
JP2006196259A 2006-07-18 2006-07-18 電力用半導体装置 Active JP4760585B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006196259A JP4760585B2 (ja) 2006-07-18 2006-07-18 電力用半導体装置
TW095143710A TWI334216B (en) 2006-07-18 2006-11-27 Power semiconductor apparatus
US11/610,624 US7449726B2 (en) 2006-07-18 2006-12-14 Power semiconductor apparatus
EP06026107.0A EP1881530B1 (en) 2006-07-18 2006-12-15 Power semiconductor apparatus
KR1020070056555A KR100898774B1 (ko) 2006-07-18 2007-06-11 전력용 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006196259A JP4760585B2 (ja) 2006-07-18 2006-07-18 電力用半導体装置

Publications (2)

Publication Number Publication Date
JP2008027993A true JP2008027993A (ja) 2008-02-07
JP4760585B2 JP4760585B2 (ja) 2011-08-31

Family

ID=38259385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006196259A Active JP4760585B2 (ja) 2006-07-18 2006-07-18 電力用半導体装置

Country Status (5)

Country Link
US (1) US7449726B2 (ja)
EP (1) EP1881530B1 (ja)
JP (1) JP4760585B2 (ja)
KR (1) KR100898774B1 (ja)
TW (1) TWI334216B (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834267A (zh) * 2010-04-30 2010-09-15 深圳市奥伦德元器件有限公司 平面支架及封装方法
JP2013051300A (ja) * 2011-08-31 2013-03-14 Sanken Electric Co Ltd 半導体モジュール
JP2013225555A (ja) * 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP5661183B2 (ja) * 2012-02-13 2015-01-28 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
US9190397B2 (en) 2012-02-14 2015-11-17 Mitsubishi Electric Corporation Semiconductor device
WO2018193581A1 (ja) * 2017-04-20 2018-10-25 三菱電機株式会社 電力変換装置
JP2018182220A (ja) * 2017-04-20 2018-11-15 三菱電機株式会社 電力変換装置
JP2019036677A (ja) * 2017-08-21 2019-03-07 三菱電機株式会社 パワーモジュールおよび電力変換装置

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101221807B1 (ko) * 2006-12-29 2013-01-14 페어차일드코리아반도체 주식회사 전력 소자 패키지
CN201011655Y (zh) * 2007-01-10 2008-01-23 上海凯虹科技电子有限公司 一种大功率半导体器件的框架
JP5112101B2 (ja) * 2007-02-15 2013-01-09 株式会社東芝 半導体パッケージ
SI2149902T1 (sl) * 2007-05-18 2019-03-29 Sansha Electric Manufacturing Company, Limited Močnostni polprevodniški moduli in naprava za električni oblok, ki le-tega uporablja
CN101681907B (zh) * 2007-11-30 2012-11-07 松下电器产业株式会社 散热结构体基板和使用其的模块及散热结构体基板的制造方法
KR101454321B1 (ko) * 2008-01-22 2014-10-23 페어차일드코리아반도체 주식회사 절연 금속 기판을 구비하는 반도체 패키지 및 그 제조방법
DE102008031231B4 (de) * 2008-07-02 2012-12-27 Siemens Aktiengesellschaft Herstellungsverfahren für planare elektronsche Leistungselektronik-Module für Hochtemperatur-Anwendungen und entsprechendes Leistungselektronik-Modul
TW201011869A (en) * 2008-09-10 2010-03-16 Cyntec Co Ltd Chip package structure
US8076696B2 (en) * 2009-10-30 2011-12-13 General Electric Company Power module assembly with reduced inductance
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
JP2013016629A (ja) * 2011-07-04 2013-01-24 Mitsubishi Electric Corp 半導体モジュール
US9147637B2 (en) * 2011-12-23 2015-09-29 Infineon Technologies Ag Module including a discrete device mounted on a DCB substrate
JP5656907B2 (ja) * 2012-04-11 2015-01-21 三菱電機株式会社 パワーモジュール
JP5863599B2 (ja) * 2012-08-21 2016-02-16 三菱電機株式会社 パワーモジュール
KR101482317B1 (ko) 2012-10-30 2015-01-13 삼성전기주식회사 단위 전력 모듈 및 이를 포함하는 전력 모듈 패키지
KR101443985B1 (ko) * 2012-12-14 2014-11-03 삼성전기주식회사 전력 모듈 패키지
KR102034717B1 (ko) 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
CN105990265B (zh) * 2015-02-26 2019-04-05 台达电子工业股份有限公司 功率转换电路的封装模块及其制造方法
JP6613806B2 (ja) * 2015-10-23 2019-12-04 富士電機株式会社 半導体装置
JP6362800B2 (ja) * 2016-02-04 2018-07-25 三菱電機株式会社 半導体装置
US10679929B2 (en) 2017-07-28 2020-06-09 Advanced Semiconductor Engineering Korea, Inc. Semiconductor package device and method of manufacturing the same
JP6939392B2 (ja) * 2017-10-17 2021-09-22 三菱電機株式会社 パワーモジュール
US11257768B2 (en) * 2017-12-13 2022-02-22 Mitsubishi Electric Corporation Semiconductor device and power conversion device
DE102018214059A1 (de) * 2018-08-21 2020-02-27 Robert Bosch Gmbh Gehäuserahmen für ein Steuergerät, welcher zur elektrischen Außenkontaktierung eines Schaltungsträgers des Steuergeräts geeignet ist
US11081422B2 (en) * 2019-03-14 2021-08-03 Toyota Motor Engineering & Manufacturing North America, Inc. Self-healing PDMS encapsulation and repair of power modules
CN112805830A (zh) * 2019-04-01 2021-05-14 富士电机株式会社 半导体模块
KR102418409B1 (ko) * 2020-06-30 2022-07-07 하나 세미컨덕터 (아유타야) 씨오., 엘티디 방열 클립을 구비한 전력 반도체 장치

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278265A (ja) * 1988-09-14 1990-03-19 Nippon Inter Electronics Corp リードフレームおよびそのリードフレームを使用した複合半導体装置
JPH09153572A (ja) * 1995-11-30 1997-06-10 Mitsubishi Electric Corp 半導体装置
JPH10125898A (ja) * 1996-09-02 1998-05-15 Fuji Electric Co Ltd 無接点式半導体接触器
JP2003100987A (ja) * 2001-09-20 2003-04-04 Mitsubishi Electric Corp 半導体装置
JP2004064081A (ja) * 2003-08-08 2004-02-26 Hitachi Ltd 複合材料及びその用途
JP2006093255A (ja) * 2004-09-22 2006-04-06 Fuji Electric Device Technology Co Ltd パワー半導体モジュールおよびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279653A (ja) 1985-10-03 1987-04-13 Fujitsu Ltd ハイブリツドｉｃのパツケ−ジング構造
US6069401A (en) * 1996-10-29 2000-05-30 Kabushiki Kaisha Toshiba Semiconductor chip
JPH10335579A (ja) * 1997-05-27 1998-12-18 Toshiba Corp 大電力半導体モジュール装置
JP2001085613A (ja) 1999-09-13 2001-03-30 Hitachi Ltd トランスファモールド型パワーモジュール
JP4262453B2 (ja) 2002-07-15 2009-05-13 三菱電機株式会社 電力半導体装置
JP2006179856A (ja) * 2004-11-25 2006-07-06 Fuji Electric Holdings Co Ltd 絶縁基板および半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0278265A (ja) * 1988-09-14 1990-03-19 Nippon Inter Electronics Corp リードフレームおよびそのリードフレームを使用した複合半導体装置
JPH09153572A (ja) * 1995-11-30 1997-06-10 Mitsubishi Electric Corp 半導体装置
JPH10125898A (ja) * 1996-09-02 1998-05-15 Fuji Electric Co Ltd 無接点式半導体接触器
JP2003100987A (ja) * 2001-09-20 2003-04-04 Mitsubishi Electric Corp 半導体装置
JP2004064081A (ja) * 2003-08-08 2004-02-26 Hitachi Ltd 複合材料及びその用途
JP2006093255A (ja) * 2004-09-22 2006-04-06 Fuji Electric Device Technology Co Ltd パワー半導体モジュールおよびその製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101834267A (zh) * 2010-04-30 2010-09-15 深圳市奥伦德元器件有限公司 平面支架及封装方法
JP2013051300A (ja) * 2011-08-31 2013-03-14 Sanken Electric Co Ltd 半導体モジュール
JP5661183B2 (ja) * 2012-02-13 2015-01-28 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
JPWO2013121491A1 (ja) * 2012-02-13 2015-05-11 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
US9136193B2 (en) 2012-02-13 2015-09-15 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method of manufacturing the same
US9190397B2 (en) 2012-02-14 2015-11-17 Mitsubishi Electric Corporation Semiconductor device
DE112012005457B4 (de) 2012-02-14 2018-07-12 Mitsubishi Electric Corporation Halbleitervorrichtung mit elektrisch isolierten Kommunikationsvorrichtungen zur Ansteuerung
JP2013225555A (ja) * 2012-04-20 2013-10-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
WO2018193581A1 (ja) * 2017-04-20 2018-10-25 三菱電機株式会社 電力変換装置
JP2018182220A (ja) * 2017-04-20 2018-11-15 三菱電機株式会社 電力変換装置
JPWO2018193581A1 (ja) * 2017-04-20 2019-11-07 三菱電機株式会社 電力変換装置
JP2019036677A (ja) * 2017-08-21 2019-03-07 三菱電機株式会社 パワーモジュールおよび電力変換装置

Also Published As

Publication number Publication date
EP1881530B1 (en) 2016-03-16
EP1881530A1 (en) 2008-01-23
US7449726B2 (en) 2008-11-11
TW200807678A (en) 2008-02-01
JP4760585B2 (ja) 2011-08-31
TWI334216B (en) 2010-12-01
US20080017882A1 (en) 2008-01-24
KR100898774B1 (ko) 2009-05-20
KR20080008218A (ko) 2008-01-23

Similar Documents

Publication Publication Date Title
JP4760585B2 (ja) 電力用半導体装置
JP6119313B2 (ja) 半導体装置
JP6288254B2 (ja) 半導体モジュールおよびその製造方法
US7701054B2 (en) Power semiconductor module and method for its manufacture
JP6470938B2 (ja) パワーモジュール及び電力変換装置
US11004756B2 (en) Semiconductor device
US10163752B2 (en) Semiconductor device
US20110292611A1 (en) Semiconductor-device cooling structure and power converter
US8193620B2 (en) Integrated circuit package with enlarged die paddle
JP5172290B2 (ja) 半導体装置
JP2015185835A (ja) 半導体装置及びその製造方法
JP4688751B2 (ja) 半導体装置
KR101265046B1 (ko) 반도체장치
JP2010177453A (ja) 半導体装置
ITMI20111214A1 (it) Dispositivo di potenza a spessore ridotto
JP2008140979A (ja) パッケージ型半導体装置
JP2005354118A (ja) 混成集積回路装置
KR102484544B1 (ko) 와이어 본딩을 구비한 스페이서 리스 양면냉각 전력 패키지
JP5974880B2 (ja) 半導体装置及びその製造方法
JP7092269B2 (ja) 半導体モジュール
KR101464984B1 (ko) 규격화된 소형 아이피엠
JP2010153642A (ja) 樹脂封止型半導体装置及びその製造方法
JP2009059759A (ja) 樹脂封止型半導体装置
JP2019009295A (ja) 半導体装置
JP2018125460A (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090114

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110406

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110523

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140617

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4760585

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250