CN112805830A - 半导体模块 - Google Patents

半导体模块 Download PDF

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Publication number
CN112805830A
CN112805830A CN202080005453.7A CN202080005453A CN112805830A CN 112805830 A CN112805830 A CN 112805830A CN 202080005453 A CN202080005453 A CN 202080005453A CN 112805830 A CN112805830 A CN 112805830A
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China
Prior art keywords
mosfet
igbt
sic
semiconductor module
semiconductor
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CN202080005453.7A
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佐藤忠彦
佐藤宪一郎
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication of CN112805830A publication Critical patent/CN112805830A/zh
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Abstract

在将SiC‑MOSFET与由Si半导体材料形成的IGBT并联连接而构成的半导体模块中，在不增加芯片数量和模块体积的情况下抑制由SiC‑MOSFET的体二极管通电造成的缺陷生长。将与SiC‑MOSFET(11)并联连接的IGBT用使IGBT(13)和续流二极管(14)单芯片化而得的RC‑IGBT(12)来构成。在这里，将续流二极管(14)的正向电压设为在与SiC‑MOSFET(11)的体二极管(11a)的使晶格缺陷生长的电流相对应的正向电压以下。由此，在半导体模块(10)中流经反向的电流时，因为该电流在续流二极管(14)中流通，所以能够抑制SiC‑MOSFET(11)的缺陷生长。

Description

半导体模块
技术领域
本发明涉及将特性不同的多个半导体芯片并联连接而构成的半导体模块。
背景技术
在开关电源装置中使用将半导体开关元件级联连接而构成的半桥电路。作为半导体开关元件，已知有以对特性不同的多个电压控制型半导体芯片组合而得到所期望的特性的方式构成的半导体模块(例如参照专利文献1)。在这里，对专利文献1记载的半导体模块的构成例进行说明。
图9是表示现有的半导体模块的构成例的电路图，图10是表示现有的半导体模块的特性例的图，图11是表示在使用了SiC-MOSFET的情况下与由晶格缺陷生长造成的特性劣化对应的现有的半导体模块的构成例的电路图。
图9所示的半导体模块100通过将MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor：金属-氧化物半导体场效应晶体管)101与IGBT(Insulated GateBipolar Transistor：绝缘栅双极型晶体管)102并联连接而构成。即，MOSFET 101的漏极连接于IGBT 102的集电极，MOSFET 101的源极连接于IGBT 102的发射极。与MOSFET 101反向并联连接的二极管是内置于MOSFET 101的体二极管101a。
如图10所示，这样的半导体模块100具有特性130，该特性130是将MOSFET 101所具有的通态电阻特性110与IGBT 102所具有的特性120合成而得的。应予说明，在图10中，横轴表示MOSFET 101的漏极-源极间电压Vds或IGBT 102的集电极-发射极间电压Vce，纵轴表示MOSFET 101的漏极电流Ids或IGBT 102的集电极电流Ice。在这里，因为MOSFET 101的通态电阻特性110是能够使与电压成比例的电流流通的定电阻特性，所以用斜率恒定的直线来表示。IGBT 102所具有的特性120具有在低电压区域中电流不流通并且在大电流区域中电压降低的特性，成为近似二极管的特性。如果将这些通态电阻特性110和特性120组合，则半导体模块100能够形成由特性130所示的特性，并构成损耗在遍及小电流区域乃至大电流区域均低的半导体开关元件。
近年来，由SiC半导体材料形成的MOSFET(以下称为SiC-MOSFET)陆续出现。该SiC-MOSFET被低电阻化为其通态电阻比由Si半导体材料形成的MOSFET低。因此，如果用SiC-MOSFET构成半导体模块100的由Si半导体材料形成的MOSFET 101，则进一步实现损耗减小的半导体模块。另外，如果是具有相同通态电阻的MOSFET，则SiC-MOSFET能够进一步缩小芯片尺寸。
图11所示的半导体模块105是将SiC-MOSFET 106和IGBT 102并联连接而构成的模块。SiC-MOSFET 106内置有反向并联连接的体二极管106a，此外，反向并联连接有肖特基势垒二极管107。该肖特基势垒二极管107用于保护MOSFET 106的体二极管106a，接下来，对需要该保护的理由进行说明。
有时将半导体模块105用作构成例如开关电源装置的半桥电路的半导体开关元件。在半桥电路对并联连接于其低侧的半导体开关元件的马达和/或变压器等电感负载进行驱动的构成中，有时在MOSFET 106的体二极管106a中流通电流。即，导通半桥电路的高侧的半导体开关元件而将电流供给到马达和/或变压器等电感负载之后，如果将高侧的半导体开关元件关断，则正在该电感负载流通的电流保持流通。此时，正在电感负载流通的电流变为通过低侧的半导体开关元件的体二极管而反向逆流。
已知如果在SiC-MOSFET 106的体二极管106a中流通正向的电流，则MOSFET的晶格缺陷生长(例如参照专利文献2)。如果由于体二极管106a通电而使缺陷生长，则体二极管106a的正向电压特性和MOSFET的通态电阻特性发生劣化，MOSFET的寿命、甚至半导体模块的寿命会变短。
因为对于抑制由体二极管106a通电造成的缺陷生长而言，不使体二极管106a通电即可，所以在专利文献2中采用了将肖特基势垒二极管反向并联连接于MOSFET的构成。半导体模块105所具有的肖特基势垒二极管107相当于专利文献2记载的肖特基势垒二极管。
现有技术文献
专利文献
专利文献1：日本特开平4-354156号公报
专利文献2：日本特开2014-195082号公报(第【0002】段)
发明内容
技术问题
然而，如果采用将肖特基势垒二极管反向并联连接于SiC-MOSFET的构成，则需要再追加一种搭载于半导体模块的半导体芯片，可能由于芯片数量增加和模块体积增加而导致成本提高。当然，通过在SiC-MOSFET的体二极管中流通电流的时间内使MOSFET导通，即进行所谓的同期整流动作，从而能够使在体二极管中流通的电流减少。但是，存在例如在到MOSFET导通为止的死区期间和/或异常动作时使MOSFET导通困难这样的问题。
本发明是鉴于这种情况而作出的，目的在于提供一种半导体模块，该半导体模块在不增加芯片数量和模块体积的情况下抑制由SiC-MOSFET的体二极管通电造成的缺陷生长。
技术方案
在本发明中，为了解决上述课题，在一个方案中提供将由SiC半导体材料形成的MOSFET与由Si半导体材料形成的IGBT并联连接而构成的半导体模块。在该半导体模块中，IGBT是由Si半导体材料形成的RC-IGBT，将RC-IGBT的续流二极管的正向电压设为在与使MOSFET的体二极管的晶格缺陷生长的电流相对应的正向电压以下。
技术效果
上述构成的半导体模块因为无论温度和/或制造工艺的公差如何，都能够使在SiC-MOSFET的体二极管中流通的电流几乎为0，所以具有能够抑制SiC-MOSFET的晶格缺陷生长这样的优点。
通过与表示作为本发明的例子所优选的实施方式的附图相关联的以下说明，本发明的上述以及其他目的、特征和优点变得清楚。
附图说明
图1是表示第1实施方式的半导体模块的构成例的电路图。
图2是表示半导体模块的特性例的图。
图3是表示第1实施方式的半导体模块的内部结构的例子的截面图。
图4是表示第1实施方式的半导体模块的内部结构的例子的俯视图。
图5是表示第2实施方式的半导体模块的构成例的电路图。
图6是表示第3实施方式的半导体模块的构成例的电路图。
图7是表示第4实施方式的半导体模块的构成例的电路图。
图8是表示第5实施方式的半导体模块的构成例的电路图。
图9是表示现有的半导体模块的构成例的电路图。
图10是表示现有的半导体模块的特性例的图。
图11是表示与在使用SiC-MOSFET的情况下因晶格缺陷生长而造成的特性劣化对应的现有的半导体模块的构成例的电路图。
符号说明
10，10a，10b，10c，10d：半导体模块
11：SiC-MOSFET
11a：体二极管
12，12a，12b，12c：RC-IGBT
13：IGBT
14：续流二极管
15：感测发射极
16：二极管
17：Si-MOSFET
17a：体二极管
21：绝缘基板
22：铜图案
23：SiC芯片
24：Si芯片
25：壳体
26：外部端子
27，28：引线框
29：外部端子
30：键合线
31：外部端子
32，33：键合线
34：外部端子
35：铜箔
具体实施方式
接下来，一边参照附图一边详细地说明用于实施本发明的方式。应予说明，图中由同一符号所示的部分表示同一构成要素。
图1是表示第1实施方式的半导体模块的构成例的电路图，图2是表示半导体模块的特性例的图。应予说明，图2为在半导体模块中反向流通的电流电压特性。
第1实施方式的半导体模块10由将SiC-MOSFET 11与由Si半导体材料形成的RC-IGBT(反向导通型IGBT)12并联连接而构成。SiC-MOSFET 11内置有体二极管11a。RC-IGBT12是将IGBT 13和续流二极管(Free Wheeling Diode)14单芯片化而得的。因此，半导体模块10由2种半导体芯片构成。
在该半导体模块10中，SiC-MOSFET 11的漏极连接于RC-IGBT 12的集电极并且构成了供主电流流通的端子。SiC-MOSFET 11的源极连接于RC-IGBT 12的发射极并且构成了供主电流流通的另一端子。
在该半导体模块10中，通过使在SiC-MOSFET 11的体二极管11a中正向流通的电流流到RC-IGBT 12的续流二极管14，从而使得续流二极管14防止体二极管11a劣化。因此，如图2所示，在半导体模块10工作的条件(温度、电流)下，发挥使RC-IGBT 12的续流二极管14的正向电压总是低于与SiC-MOSFET 11的体二极管11a的使晶格缺陷生长的电流相对应的正向电压的特性。由此，因为无论温度和/或制造工艺的公差如何，都能够将在SiC-MOSFET11的体二极管11a中流通的电流降低到0附近，所以能够抑制SiC-MOSFET 11的晶格缺陷生长。
应予说明，在图2中，横轴示出了SiC-MOSFET 11的源极-漏极间电压Vsd和RC-IGBT12的发射极-集电极间电压Vec。图2的纵轴示出了在SiC-MOSFET 11的体二极管11a中流通的电流Ibd和在RC-IGBT 12的续流二极管14中流通的电流Ifd。
在图2中示出了SiC-MOSFET 11的通态电阻特性Ron_MOS、RC-IGBT 12的续流二极管14的正向电压特性Vf_FD和SiC-MOSFET 11的体二极管11a的正向电压特性Vf_BD的曲线。在这里，假设SiC-MOSFET 11的体二极管11a的会使晶格缺陷生长的电流Ibd为例如5安培(A)以上。根据图2所示的数值例，因为此时的源极-漏极间电压Vsd是大约2.1伏特(V)，所以发射极-集电极间电压Vec＝2.1V时的续流二极管14的电流Ifd为大约72A。由此可知，如果将能够在半导体模块10中流通的反向的最大使用电流设为72A，则因为不会在体二极管11a中流通超过5A的电流，所以能够抑制因体二极管11a的通电造成的特性劣化。
另外，在该半导体模块10中由于SiC-MOSFET的通态电阻小并且体二极管11a在小电流区域工作，因此能够缩小芯片尺寸。另外，因为与昂贵的SiC-MOSFET比较，对由低廉的Si半导体材料形成的开关元件追加了续流二极管14的功能，所以该半导体模块10能够抑制由追加功能造成的成本提高。
图3是表示第1实施方式的半导体模块的内部结构的例子的截面图，图4是表示第1实施方式的半导体模块的内部结构的例子的俯视图。
半导体模块10具有陶瓷制的绝缘基板21。该绝缘基板21的正面(图3的上方的面)接合有铜图案22，并且绝缘基板21的整个背面接合有铜箔35。在铜图案22的表面，在预定位置分别通过焊料接合有SiC-MOSFET 11的SiC芯片23和RC-IGBT 12的Si芯片24。因为SiC芯片23的厚度比Si芯片24的厚度厚，所以各个芯片的高度不同。另外，铜图案22通过引线框27连接于被固定于壳体25的外部端子26。由此，SiC-MOSFET 11的漏极和RC-IGBT 12的集电极电连接于铜图案22，铜图案22通过引线框27电连接于供主电流流通的外部端子26。
Si芯片24的上表面的主电极通过引线框28连接于被固定于壳体25的外部端子29，控制焊盘通过键合线30连接于被固定于壳体25的外部端子31。SiC芯片23的上表面的主电极通过多个键合线32连接于引线框28，控制焊盘通过键合线33连接于被固定于壳体25的外部端子34。在这里，键合线32在Si芯片24的正上方位置连接于引线框28。由此，SiC-MOSFET11的源极和RC-IGBT 12的发射极通过键合线32和引线框28电连接于供主电流流通的外部端子29。
在该半导体模块10，通过电流容量大并且电感小的引线框28对Si芯片24的主电极进行布线，通过键合线32对SiC芯片23的主电极进行布线。在这种情况下，从外部端子29到SiC芯片23经由引线框28和键合线32而电连接。因此，从外部端子29观察到的SiC芯片23的布线电感和布线电阻比Si芯片24的情况下的布线电感和布线电阻大。由此，在半导体模块10中，对于反向流通的电流而言在Si芯片24中比在SiC芯片23中易于流通。另外，利用键合线32进行SiC芯片23的主电极的布线。由此，即使SiC芯片23的芯片尺寸小，由键合线32进行的布线也比由引线框28进行的布线更容易进行。其理由是因为在由引线框28进行布线的情况下，芯片尺寸越小越难以在SiC芯片23的主电极避开保护环或耐压结构物而高精度地定位。另外，因为SiC芯片23与Si芯片24的厚度不同，所以如果用引线框28对SiC芯片23和Si芯片24进行布线，则必须考虑芯片的厚度和芯片上/下的焊料的安装公差从而高精度地定位引线框28，难以安装。
应予说明，接合于绝缘基板21的整个背面的铜箔35通过焊料接合于金属板(未图示)。该金属板通过安装并热接合于散热器，从而能够使在半导体模块10产生的热释放到外部。
另外，虽然在该实施方式中，半导体模块10搭载有一个SiC-MOSFET 11和一个RC-IGBT 12，但是有时也根据所期望的特性并联搭载有多个SiC-MOSFET 11。
图5是表示第2实施方式的半导体模块的构成例的电路图，图6是表示第3实施方式的半导体模块的构成例的电路图，图7是表示第4实施方式的半导体模块的构成例的电路图，图8是表示第5实施方式的半导体模块的构成例的电路图。
如图5所示，第2实施方式的半导体模块10a具有RC-IGBT 12a，该RC-IGBT 12a具有电流感测功能。在半导体模块10a中，因为RC-IGBT 12a承担了大电流区域，所以仅RC-IGBT12a具有电流感测功能。
该RC-IGBT 12a是在主RC-IGBT(与图1的RC-IGBT 12相同)的芯片搭载感测IGBT作为电流感测元件而成的。感测IGBT的集电极和栅极分别与主RC-IGBT的集电极和栅极以共用的方式连接，并且主RC-IGBT的发射极和感测发射极15独立地设置在外部。但是，在图5中，主RC-IGBT和感测IGBT作为RC-IGBT 12a以一个标记来表示。因此，在该RC-IGBT 12a中，除了主电流用的端子和控制端子以外，还需要1个电流检测用的外部端子。
在该半导体模块10a中，因为从感测发射极15输出与主RC-IGBT的集电极电流几乎成比例的电流作为感测电流，所以通过检测该感测电流从而能够推断主RC-IGBT的集电极电流。
如图6所示，第3实施方式的半导体模块10b具有RC-IGBT 12b，该RC-IGBT 12b具有温度感测功能。在半导体模块10b中，因为RC-IGBT 12b承担了大电流区域而发热量大，所以仅RC-IGBT 12b具有温度感测功能。
该RC-IGBT 12b是在RC-IGBT(与图1的RC-IGBT 12相同)的芯片的一部分形成二极管16作为温度感测元件而成的。温度感测功能能够通过利用二极管16的正向电压所具有的负的温度系数，检测流经二极管16的电流的变化，从而检测RC-IGBT 12b的温度。因此，在该RC-IGBT 12b中，除了主电流用的端子和控制端子以外，还需要2个温度检测用的外部端子。
如图7所示，第4实施方式的半导体模块10c具有RC-IGBT 12c，该RC-IGBT 12c具有电流感测功能和温度感测功能。该RC-IGBT 12c在主RC-IGBT和感测IGBT的芯片的一部分形成有二极管16作为温度感测元件。由此，能够通过检测从感测发射极15输出的感测电流，从而推断主RC-IGBT的集电极电流，通过检测流经二极管16的电流的变化从而检测RC-IGBT12c的芯片温度。因此，在该RC-IGBT 12c中，除了主电流用的端子和控制端子以外，还需要3个电流检测用和温度检测用的外部端子。
如图8所示，第5实施方式的半导体模块10d采用由Si半导体材料形成的MOSFET(以下称为Si-MOSFET)17来代替图1的由Si半导体材料形成的RC-IGBT 12。即，该半导体模块10d为将电压控制型的SiC-MOSFET 11和Si-MOSFET 17并联连接而得的构成。应予说明，反向并联连接于Si-MOSFET 17的二极管是内置于Si-MOSFET 17的体二极管17a。
根据该半导体模块10d，使在SiC-MOSFET 11的体二极管11a中正向流通的电流流到Si-MOSFET 17的体二极管17a。Si-MOSFET 17的体二极管17a的正向电压在与SiC-MOSFET11的体二极管11a的使晶格缺陷生长的电流相对应的正向电压以下。因此，能够用Si-MOSFET 17的体二极管17a来防止由于在SiC-MOSFET 11的体二极管11a中流通电流造成的体二极管11a的劣化。此外，Si-MOSFET 17无需与在第1实施方式至第4实施方式中使用的RC-IGBT 12同样地再追加一种二极管的半导体芯片。
以上仅表示本发明的原理。进而，对于本领域技术人员而言可以进行多种变形、变更，本发明并不限定于上述所示且所说明的准确的构成和应用例，对应的所有的变形例以及等价物均被视为由所附的权利要求及其等价物所确定的本发明的范围。

Claims (7)

1.一种半导体模块，其特征在于，所述半导体模块通过将由SiC半导体材料形成的MOSFET与由Si半导体材料形成的IGBT并联连接而构成，在所述半导体模块中，
所述IGBT是由Si半导体材料形成的RC-IGBT，
将所述RC-IGBT的续流二极管的正向电压设为与所述MOSFET的体二极管的使晶格缺陷生长的电流相对应的正向电压以下。
2.根据权利要求1所述的半导体模块，其特征在于，所述RC-IGBT的发射极通过引线框连接于供主电流流通的外部端子，所述MOSFET的源极通过键合线连接于所述引线框。
3.根据权利要求2所述的半导体模块，其特征在于，所述引线框的连接所述键合线的位置在所述RC-IGBT的发射极的正上方。
4.根据权利要求1～3中任一项所述的半导体模块，其特征在于，所述MOSFET的芯片面积比所述RC-IGBT的芯片面积小。
5.根据权利要求1～3中任一项所述的半导体模块，其特征在于，所述MOSFET的芯片厚度比所述RC-IGBT的芯片厚度大。
6.根据权利要求1～3中任一项所述的半导体模块，其特征在于，所述RC-IGBT具有温度感测元件和电流感测元件中的至少一种。
7.一种半导体模块，其特征在于，所述半导体模块通过将由SiC半导体材料形成的电压控制型的半导体芯片和由Si半导体材料形成的电压控制型的半导体芯片并联连接而构成，在所述半导体模块中，
由所述SiC半导体材料形成的电压控制型的半导体芯片是SiC-MOSFET，
由所述Si半导体材料形成的电压控制型的半导体芯片是Si-MOSFET，所述Si-MOSFET的体二极管具有与所述SiC-MOSFET的体二极管的使晶格缺陷生长的电流相对应的正向电压以下的正向电压。
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