JPWO2018193581A1 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JPWO2018193581A1 JPWO2018193581A1 JP2019513163A JP2019513163A JPWO2018193581A1 JP WO2018193581 A1 JPWO2018193581 A1 JP WO2018193581A1 JP 2019513163 A JP2019513163 A JP 2019513163A JP 2019513163 A JP2019513163 A JP 2019513163A JP WO2018193581 A1 JPWO2018193581 A1 JP WO2018193581A1
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- 229920005989 resin Polymers 0.000 claims abstract description 88
- 239000011347 resin Substances 0.000 claims abstract description 88
- 239000004065 semiconductor Substances 0.000 claims abstract description 63
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 239000003566 sealing material Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000011810 insulating material Substances 0.000 description 10
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 239000000779 smoke Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000001743 silencing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Abstract
Description
図1は、この発明の実施の形態1に係る電力変換装置の正面図である。また、図2及び図3は、それぞれ、図1のA−A断面図、および、B−B断面図である。
この発明の実施の形態2に係る電力変換装置を、図9を参照して説明する。図9は、実施の形態2における電力変換装置の断面図である。なお、図9においては、図3に示した構成と同一または対応する部分については、同一の符号を付し、ここでは、その説明を省略する。また、実施の形態2は、基本的に実施の形態1で説明した思想を前提とするものである。
この発明の実施の形態3に係る電力変換装置を、図13を参照して説明する。図13は、実施の形態3における電力変換装置の断面図である。なお、図13においては、図3に示した構成と同一または対応する部分については、同一の符号を付し、ここでは、その説明を省略する。また、実施の形態3は、基本的に実施の形態1で説明した思想を前提とするものである。
Claims (8)
- 電力変換モジュールを備えた電力変換装置であって、
前記電力変換モジュールは、
配線パターン状に設けられた1以上のリードフレームと、
前記リードフレーム上に設けられた半導体素子と、
前記リードフレームと前記半導体素子との間を接続する配線部材と、
前記リードフレームと前記半導体素子と前記配線部材とを封止するモールド樹脂と
を有し、
前記配線部材にヒューズ部を設け、
前記ヒューズ部の上側に設けられた前記モールド樹脂の厚さは、前記ヒューズ部の下側に設けられた前記モールド樹脂の厚さより薄い、
電力変換装置。 - 前記ヒューズ部は、
前記配線部材の少なくとも1箇所以上に設けられ、前記配線部材の他の部位よりも断面積が小さくなるように形成された部位から構成されている、
請求項1に記載の電力変換装置。 - 前記ヒューズ部の上側に設けられた前記モールド樹脂の上面に凹み部を設けた、
請求項1または2に記載の電力変換装置。 - 前記凹み部は、前記ヒューズ部の上面に達する貫通穴から構成され、
前記ヒューズ部は、前記貫通穴を通して外部に露出している、
請求項3に記載の電力変換装置。 - 前記凹み部は、前記モールド樹脂の熱伝導率よりも小さい熱伝導率を有する封止材が充填され封止されている、
請求項3または4に記載の電力変換装置。 - 前記モールド樹脂の上面に、前記凹み部を覆うフタを設けた、
請求項3から5までのいずれか1項に記載の電力変換装置。 - 前記モールド樹脂で封止される部品のうち、前記配線部材の高さが最も高い、
請求項1または2に記載の電力変換装置。 - 前記ヒューズ部が設けられた前記配線部材の上面の少なくとも一部が、前記モールド樹脂から外部に露出している、
請求項7に記載の電力変換装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/015897 WO2018193581A1 (ja) | 2017-04-20 | 2017-04-20 | 電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018193581A1 true JPWO2018193581A1 (ja) | 2019-11-07 |
JP6797289B2 JP6797289B2 (ja) | 2020-12-09 |
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JP2019513163A Active JP6797289B2 (ja) | 2017-04-20 | 2017-04-20 | 電力変換装置 |
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JP (1) | JP6797289B2 (ja) |
WO (1) | WO2018193581A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7444084B2 (ja) * | 2021-01-14 | 2024-03-06 | 三菱電機株式会社 | 半導体装置 |
KR102693501B1 (ko) * | 2022-11-02 | 2024-08-09 | (주)태원하이텍 | 합성수지 재질의 전기자동차용 전력분배장치 케이스 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175439A (ja) * | 2003-11-20 | 2005-06-30 | Toyota Motor Corp | 半導体装置およびそれを備えた自動車 |
JP2008027993A (ja) * | 2006-07-18 | 2008-02-07 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2008118010A (ja) * | 2006-11-07 | 2008-05-22 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2008198661A (ja) * | 2007-02-08 | 2008-08-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2008235502A (ja) * | 2007-03-20 | 2008-10-02 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JP2012204576A (ja) * | 2011-03-25 | 2012-10-22 | Aisin Aw Co Ltd | 半導体装置 |
WO2013118275A1 (ja) * | 2012-02-09 | 2013-08-15 | 三菱電機株式会社 | 半導体装置 |
-
2017
- 2017-04-20 WO PCT/JP2017/015897 patent/WO2018193581A1/ja active Application Filing
- 2017-04-20 JP JP2019513163A patent/JP6797289B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005175439A (ja) * | 2003-11-20 | 2005-06-30 | Toyota Motor Corp | 半導体装置およびそれを備えた自動車 |
JP2008027993A (ja) * | 2006-07-18 | 2008-02-07 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP2008118010A (ja) * | 2006-11-07 | 2008-05-22 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2008198661A (ja) * | 2007-02-08 | 2008-08-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2008235502A (ja) * | 2007-03-20 | 2008-10-02 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JP2012204576A (ja) * | 2011-03-25 | 2012-10-22 | Aisin Aw Co Ltd | 半導体装置 |
WO2013118275A1 (ja) * | 2012-02-09 | 2013-08-15 | 三菱電機株式会社 | 半導体装置 |
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JP6797289B2 (ja) | 2020-12-09 |
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