JP6660278B2 - 樹脂封止型半導体装置 - Google Patents
樹脂封止型半導体装置 Download PDFInfo
- Publication number
- JP6660278B2 JP6660278B2 JP2016209431A JP2016209431A JP6660278B2 JP 6660278 B2 JP6660278 B2 JP 6660278B2 JP 2016209431 A JP2016209431 A JP 2016209431A JP 2016209431 A JP2016209431 A JP 2016209431A JP 6660278 B2 JP6660278 B2 JP 6660278B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- power
- resin sealing
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 52
- 229920005989 resin Polymers 0.000 claims description 72
- 239000011347 resin Substances 0.000 claims description 72
- 238000007789 sealing Methods 0.000 claims description 36
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 11
- 239000000779 smoke Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013008 moisture curing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
すなわち、特許文献1に記載の半導体装置では、ヒューズ機能を有する銅ワイヤの一部がシリコーンゲルで覆われている。ここで、銅ワイヤとシリコーンゲルとが接触していると、銅ワイヤの発熱でシリコーンゲルが炭化し、シリコーンゲルの層が十分な厚みを有していない場合には、その炭化生成物が積層し、大気と接触することによって燃焼反応を起こし、樹脂封止型半導体装置が発煙および発火するという問題がある。
ここで、パワーリードにヒューズ部を形成することにより、過電流を確実に遮断することができる。また、ヒューズ部を第1樹脂封止部で被覆し、さらに第2樹脂封止部により第1樹脂封止部を大気から遮断することにより、樹脂の燃焼反応を抑制して、発煙および発火を防止することができる。
そのため、過電流を確実に遮断するとともに、発煙および発火の耐性に優れた樹脂封止型半導体装置を得ることができる。
図1は、この発明の実施の形態1に係る樹脂封止型半導体装置を示す平面図である。また、図2は、図1のA−A線に沿った矢視断面図である。また、図3は、図1のB−B線に沿った矢視断面図である。
ここで、パワーリードにヒューズ部を形成することにより、過電流を確実に遮断することができる。また、ヒューズ部を第1樹脂封止部で被覆し、さらに第2樹脂封止部で被覆して第1樹脂封止部を大気から遮断することにより、樹脂の燃焼反応を抑制して、発煙および発火を防止することができる。
そのため、過電流を確実に遮断するとともに、発煙および発火の耐性に優れた樹脂封止型半導体装置を得ることができる。
Claims (3)
- 電力用半導体素子と、前記電力用半導体素子の主電極に接続されたパワーリードと、を備え、前記電力用半導体素子を樹脂でモールドするとともに、前記パワーリードをモールド樹脂部から突設させた樹脂封止型半導体装置であって、
前記パワーリードに形成されたヒューズ部と、
前記ヒューズ部を被覆する第1樹脂封止部と、
前記第1樹脂封止部を大気から遮断するとともに、前記モールド樹脂部を構成する第2樹脂封止部と、
を有し、
前記第2樹脂封止部は、前記第1樹脂封止部よりも弾性係数が高い
樹脂封止型半導体装置。 - 前記第2樹脂封止部は、前記第1樹脂封止部よりも熱伝導性が高い
請求項1に記載の樹脂封止型半導体装置。 - 前記第2樹脂封止部は、ヒートシンクの一方の面に直接接し、前記ヒートシンクの他方の面には、複数の冷却フィンが形成されている
請求項1または請求項2に記載の樹脂封止型半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016209431A JP6660278B2 (ja) | 2016-10-26 | 2016-10-26 | 樹脂封止型半導体装置 |
PCT/JP2017/037865 WO2018079409A1 (ja) | 2016-10-26 | 2017-10-19 | 樹脂封止型半導体装置 |
EP17865648.4A EP3534397B1 (en) | 2016-10-26 | 2017-10-19 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016209431A JP6660278B2 (ja) | 2016-10-26 | 2016-10-26 | 樹脂封止型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018073899A JP2018073899A (ja) | 2018-05-10 |
JP6660278B2 true JP6660278B2 (ja) | 2020-03-11 |
Family
ID=62024840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016209431A Active JP6660278B2 (ja) | 2016-10-26 | 2016-10-26 | 樹脂封止型半導体装置 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP3534397B1 (ja) |
JP (1) | JP6660278B2 (ja) |
WO (1) | WO2018079409A1 (ja) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5393781A (en) * | 1977-01-27 | 1978-08-17 | Toshiba Corp | Semiconductor device |
JPS5838988Y2 (ja) * | 1979-12-17 | 1983-09-02 | ロ−ム株式会社 | 半導体装置用保護素子 |
JPH0627959Y2 (ja) * | 1988-10-20 | 1994-07-27 | ローム株式会社 | ダイオード |
JPS6214935U (ja) * | 1985-07-09 | 1987-01-29 | ||
JP2593471B2 (ja) * | 1987-03-11 | 1997-03-26 | 株式会社東芝 | 半導体装置 |
JP3459291B2 (ja) * | 1993-09-21 | 2003-10-20 | ローム株式会社 | 半導体チップを備えた電子部品 |
JPH08321578A (ja) * | 1995-05-25 | 1996-12-03 | Rohm Co Ltd | 半導体装置 |
JP3737673B2 (ja) * | 2000-05-23 | 2006-01-18 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2008235502A (ja) * | 2007-03-20 | 2008-10-02 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JP5270196B2 (ja) | 2008-03-07 | 2013-08-21 | 三菱電機株式会社 | 半導体装置及びその半導体装置を備えたインバータシステム |
JP5781185B1 (ja) * | 2014-03-25 | 2015-09-16 | 三菱電機株式会社 | 樹脂封止型半導体装置 |
-
2016
- 2016-10-26 JP JP2016209431A patent/JP6660278B2/ja active Active
-
2017
- 2017-10-19 WO PCT/JP2017/037865 patent/WO2018079409A1/ja unknown
- 2017-10-19 EP EP17865648.4A patent/EP3534397B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3534397B1 (en) | 2022-02-23 |
EP3534397A4 (en) | 2019-09-04 |
WO2018079409A1 (ja) | 2018-05-03 |
JP2018073899A (ja) | 2018-05-10 |
EP3534397A1 (en) | 2019-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6815524B2 (ja) | 電力変換装置 | |
JP6824422B2 (ja) | 電力変換装置 | |
US8368203B2 (en) | Heat radiation member for a semiconductor package with a power element and a control circuit | |
US10163752B2 (en) | Semiconductor device | |
JP6486526B1 (ja) | 電力変換装置 | |
JP5781185B1 (ja) | 樹脂封止型半導体装置 | |
JP6461264B1 (ja) | 電力変換装置 | |
JPWO2014141346A1 (ja) | 半導体装置 | |
JP5263189B2 (ja) | 半導体パッケージの防水構造 | |
CN106165089B (zh) | 半导体模块以及搭载有半导体模块的驱动装置 | |
JP6479115B1 (ja) | 電力変換装置 | |
JP6660278B2 (ja) | 樹脂封止型半導体装置 | |
JP6395164B1 (ja) | 電力変換装置 | |
JP6869309B2 (ja) | 電力変換装置および電力変換装置一体型回転電機 | |
JP6797289B2 (ja) | 電力変換装置 | |
JP2007317970A (ja) | ヒューズ付半導体装置 | |
JP7337214B1 (ja) | 電力変換装置 | |
JP7199575B2 (ja) | 半導体システム及び移動体 | |
JP2005302989A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180508 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180627 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20180828 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200207 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6660278 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |