KR20080008218A - 전력용 반도체장치 - Google Patents

전력용 반도체장치 Download PDF

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Publication number
KR20080008218A
KR20080008218A KR1020070056555A KR20070056555A KR20080008218A KR 20080008218 A KR20080008218 A KR 20080008218A KR 1020070056555 A KR1020070056555 A KR 1020070056555A KR 20070056555 A KR20070056555 A KR 20070056555A KR 20080008218 A KR20080008218 A KR 20080008218A
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South Korea
Prior art keywords
resin package
case
power
power semiconductor
semiconductor element
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KR1020070056555A
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English (en)
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KR100898774B1 (ko
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히데토시 나카니시
토시타카 세키네
타이치 오바라
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미쓰비시덴키 가부시키가이샤
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Publication of KR20080008218A publication Critical patent/KR20080008218A/ko
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Publication of KR100898774B1 publication Critical patent/KR100898774B1/ko

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

케이스형의 전력용 반도체장치에 있어서, 생산성에 뛰어나고, 케이스의 재이용이 용이하여 리사이클성에 뛰어난 전력용 반도체장치를 얻는다. 전력용 반도체소자 및 제어용 반도체소자를 리드프레임의 주표면에 탑재하여 몰드 수지로 밀봉한 수지 패키지와, 수지 패키지로부터 도출되어, 전력용 반도체소자와 전기적으로 접속된 전력 단자와, 수지 패키지로부터 도출되어, 제어용 반도체소자와 전기적으로 접속된 제어 단자와, 수지 패키지와 분리 가능하게 구성되어, 수지 패키지를 둘러싸는 통 모양의 케이스를 가지고, 전력 단자 및 제어 단자는, 케이스에 설치된 리드 삽입구으로부터 각각 도출되고, 전력 단자의 케이스로부터 도출된 부분은, 케이스의 단면을 따라 구부러지고 있다.
반도체 장치, 리드프레임, 수지 패키지, 전력 단자, 제어 단자

Description

전력용 반도체장치{POWER SEMICONDUCTOR APPARATUS}
도 1은 본 발명의 실시예 1에 따른 전력용 반도체장치를 나타내는 단면도이다.
도 2는 본 발명의 실시예 2에 따른 전력용 반도체장치를 나타내는 단면도이다.
도 3은 종래의 케이스형 IPM을 나타내는 단면도이다.
도 4는 종래의 케이스형 IPM을 나타내는 평면도이다.
[도면의 주요부분에 대한 부호의 설명]
11 : 리드프레임 12 : 전력용 반도체소자
13 : 제어용 반도체소자 16 : 전력 단자
17 : 제어 단자 19 : 히트싱크
20 : 몰드 수지 21 : 수지 패키지
22 : 인서트 케이스 23 : 리드 삽입구
24 : 볼트
본 발명은, 전력용 반도체소자 및 제어용 반도체소자를 케이스로 둘러싸는 케이스형의 전력용 반도체장치에 관하며, 특히 생산성에 뛰어나고, 케이스의 재이용이 용이하여 리사이클성에 뛰어난 전력용 반도체장치에 관한 것이다.
최근, 산업용 모터 콘트롤이나 서보 용도로 사용되는 IGBT모듈(Insulated Gate Bipolar Transistor)은, IPM화의 요구가 높아지고 있다. 여기에서, IPM은, 전력을 제어하는 파워 MOSFET나 IGBT등의 파워 디바이스의 구동회로나 자기보호 기능을 조립한 파워 모듈이다.
소비자용으로서 몰드형 IPM이 사용되고 있다. 이 몰드형 IPM은, IC와 파워 반도체칩(IGBT, 다이오드)을 Cu프레임에 다이마운트하고, 에폭시 몰드 수지로 경화한 것이다. 또한 몰드형 IPM에 히트싱크를 설치하여 방열성을 향상시킨 것도 제안되고 있다(예를 들면 특허문헌 1참조).
한편, 산업용 소·중용량 IPM(600V/50A이상)으로서 케이스형 IPM이 사용되고 있다. 도 3은, 종래의 케이스형 IPM을 나타내는 단면도이며, 도 4는 그 상면도이다. 인서트 케이스(1)안에는, 전력용 반도체소자로서 IGBT칩(2) 및 다이오드(3)가 탑재된 절연 기판(4)과, 제어용 반도체소자로서 제어 IC, 저항 및 콘덴서를 탑재한 실장기판(5)이 조립되고 있다. 그리고, 이것들은 서로 Al와이어(6)로 접속되고 있다.
또한 IGBT칩(2) 및 다이오드(3)는, 인서트 케이스(1)에 내장된 전력 단자(7)를 통해 외부에 접속된다. 그리고, 실장기판(5)은, 인서트 케이스(1)에 내장된 제 어 단자(8)를 통해 외부에 접속된다. 또한 IGBT칩(2) 및 다이오드(3)로부터의 열을 방열하기 위해, 절연 기판(4)의 이면에 Cu베이스(9)가 형성되고 있다. 그리고, 인서트 케이스(1)의 4모퉁이에는 케이스 링(10)이 설치된다.
[특허문헌 1] 일본국 공개특허공보 특개2001-085613호
그러나, 케이스형 IPM은, 몰드형 IPM과 비교하여, 부품수가 많고, 조립 비용이 높기 때문에 생산성이 떨어지고 있다. 또한 케이스형 IPM에 있어서, 몰드형 IPM과 마찬가지로, 케이스내에 수지를 충전했을 경우, 케이스를 재이용할 수 없게 된다는 문제가 있었다.
본 발명은, 상술한 바와 같은 과제를 해결하기 위한 것으로, 그 목적은, 케이스형의 전력용 반도체장치에 있어서, 생산성에 뛰어나고, 케이스의 재이용이 용이하여 리사이클성에 우수한 전력용 반도체장치를 얻는 것이다.
본 발명에 따른 전력용 반도체장치는, 전력용 반도체소자 및 제어용 반도체소자를 리드프레임의 주표면에 탑재하여 몰드 수지로 밀봉한 수지 패키지와, 수지 패키지로부터 도출되어 전력용 반도체소자와 전기적으로 접속된 전력 단자와, 수지 패키지로부터 도출되어 제어용 반도체소자와 전기적으로 접속된 제어 단자와, 수지 패키지와 분리 가능하게 구성되어, 수지 패키지를 둘러싸는 통 모양의 케이스를 가지고, 전력 단자 및 제어 단자는, 케이스에 설치된 리드 삽입구으로부터 각각 도출 되고, 전력 단자의 케이스로부터 도출된 부분은, 케이스의 단면을 따라 절곡되어 있다. 본 발명의 그 밖의 특징은 이하에 명백하게 한다.
실시예 1.
도 1은, 본 발명의 실시예 1에 따른 전력용 반도체장치를 나타내는 단면도이다. 리드프레임(11)의 주표면에, IGBT칩이나 다이오드 등의 전력용 반도체소자(12)와, 제어 IC 등의 제어용 반도체소자(13)가 탑재되어 있다. 그리고, 이들은 서로 Al와이어(14)를 통해 전기적으로 접속되어 있다. 또한 전력용 반도체소자(12)는 Cu단자(15)를 통해 전력 단자(16)에 전기적으로 접속되고, 제어용 반도체소자(13)는 Al와이어(14)를 통해 제어 단자(17)에 전기적으로 접속되고 있다.
그리고, 리드프레임(11)의 주이면(主裏面)에, 절연 시트(18)를 통해 히트싱크(19)가 배치되고 있다. 이들을 몰드 수지(20)로 밀봉함으로써 수지 패키지(21)가 형성되고 있다. 또한 전력 단자(16) 및 제어 단자(17)는 수지 패키지(21)로부터 도출되고 있다. 그리고, 히트싱크(19)의 외측면의 일부는 수지 패키지(21)로부터 노출하고 있다. 이 히트싱크(19)에 의해, 수지 패키지(21)의 방열성을 높일 수 있다. 구체적으로는 600V/50A에서 열저항이 0.6℃／W이며, 종래의 케이스형 IPM과 같은 정도의 열저항을 달성할 수 있다. 또한, 히트싱크(19)의 고정 수단은 필요하지 않다.
수지 패키지(21)는, 플라스틱으로 이루어지는 통 모양의 인서트 케이스(22)로 둘러싸여 있다. 그리고, 전력 단자(16) 및 제어 단자(17)는, 인서트 케이스(22) 에 설치된 리드 삽입구(23)로부터 각각 도출되고 있다. 또한, 전력 단자(16)의 인서트 케이스(22)로부터 도출된 부분은, 인서트 케이스(22)의 단면을 따라 구부러지고 있다. 또한, 이 전력 단자(16)의 절곡부에 외부배선(도시하지 않음)을 접촉시키고, 양자에 나사를 관통시킴으로써, 양자를 접속한다.
이상에서 설명한 바와 같이, 일부에 몰드형 IPM의 구조를 채용함으로써, 종래의 케이스형 IPM에 비하여 조립 부품의 삭감과 비용 저감이 가능하게 되고, 생산성이 우수한 전력용 반도체장치를 얻을 수 있다. 또한, 본 실시예에 따른 전력용 반도체장치는, 종래의 케이스형 IPM과 전력 단자·제어 단자의 위치가 외형상 바뀌지 않기 때문에, 고객은 종래의 케이스형 IPM과 같은 조립 방법으로 대응할 수 있으며, 장치를 변경할 필요가 없다.
또한 인서트 케이스(22)안에 몰드 수지(20)를 충전하지 않고, 인서트 케이스(22)를 수지 패키지(21)와 분리 가능하게 구성하고 있다. 이에 따라 전력용 반도체소자(12)나 제어용 반도체소자(13)등이 손상된 경우에, 수지 패키지(21)만을 교환할 수 있다. 따라서, 케이스의 재이용이 용이하여 리사이클성에 뛰어난 전력용 반도체장치를 얻을 수 있다.
또한 히트싱크(19)의 외주테두리는, 수지 패키지(21)의 케이싱의 외주테두리로부터 돌출하고, 인서트 케이스(22)의 개구 단테두리에 끼워지고 있다. 이에 따라 수지 패키지(21)를 인서트 케이스(22)에 고정하는 고정 수단을 필요로 하지 않기 때문에, 조립성, 즉 생산성이 우수한 전력용 반도체장치를 제공할 수 있다.
실시예 2.
도 2는, 본 발명의 실시예 2에 따른 전력용 반도체장치를 나타내는 단면도이다. 본 실시예에서는, 히트싱크(19)의 외주테두리는, 수지 패키지(21)의 케이싱의 외주테두리로부터 돌출하고, 인서트 케이스(22)의 개구 단테두리에 볼트(24)로 결합되고 있다. 그 밖의 구성은 실시예 1과 같다.
이에 따라 부품수가 적고, 조립성, 즉 생산성이 우수한 전력용 반도체장치를 제공할 수 있다. 또한 실시예 1보다도 수지 패키지와 케이스의 부착 강도가 강해진다.
본 발명에 의해, 케이스형의 전력용 반도체장치에 있어서, 생산성이 우수하고, 케이스의 재이용이 용이하여 리사이클성에 뛰어난 전력용 반도체장치를 얻을 수 있다.

Claims (4)

  1. 전력용 반도체소자 및 제어용 반도체소자를 리드프레임의 주표면에 탑재하여 몰드 수지로 밀봉한 수지 패키지와,
    상기 수지 패키지로부터 도출되어, 상기 전력용 반도체소자와 전기적으로 접속된 전력 단자와,
    상기 수지 패키지로부터 도출되어, 상기 제어용 반도체소자와 전기적으로 접속된 제어 단자와,
    상기 수지 패키지와 분리 가능하게 구성되어, 상기 수지 패키지를 둘러싸는 통 모양의 케이스를 가지고,
    상기 전력 단자 및 상기 제어 단자는, 상기 케이스에 설치된 리드 삽입구로부터 각각 도출되고,
    상기 전력 단자의 상기 케이스로부터 도출된 부분은, 상기 케이스의 단면을 따라 절곡되어 있는 것을 특징으로 하는 전력용 반도체장치.
  2. 제 1항에 있어서,
    상기 수지 패키지는, 상기 리드프레임의 주이면에 설치되어, 외측면의 일부가 상기 수지 패키지로부터 노출하고 있는 히트싱크를 더 가지는 것을 특징으로 하는 전력용 반도체장치.
  3. 제 2항에 있어서,
    상기 히트싱크의 외주테두리는, 상기 수지 패키지의 케이싱의 외주테두리로부터 돌출하고, 상기 케이스의 개구 단테두리에 끼워지고 잇는 것을 특징으로 하는 전력용 반도체장치.
  4. 제 2항에 있어서,
    상기 히트싱크의 외주테두리는, 상기 수지 패키지의 케이싱의 외주테두리로부터 돌출하고, 상기 케이스의 개구 단테두리에 볼트로 결합되고 있는 것을 특징으로 하는 전력용 반도체장치.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101482317B1 (ko) * 2012-10-30 2015-01-13 삼성전기주식회사 단위 전력 모듈 및 이를 포함하는 전력 모듈 패키지
US9853378B2 (en) 2013-02-07 2017-12-26 Samsung Electronics Co., Ltd. Substrate and terminals for power module and power module including the same
KR20220001671A (ko) * 2020-06-30 2022-01-06 하나 마이크로일렉트로닉스 퍼블릭 씨오.,엘티디. 방열 클립을 구비한 전력 반도체 장치

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101221807B1 (ko) * 2006-12-29 2013-01-14 페어차일드코리아반도체 주식회사 전력 소자 패키지
CN201011655Y (zh) * 2007-01-10 2008-01-23 上海凯虹科技电子有限公司 一种大功率半导体器件的框架
JP5112101B2 (ja) * 2007-02-15 2013-01-09 株式会社東芝 半導体パッケージ
JP5240863B2 (ja) * 2007-05-18 2013-07-17 株式会社三社電機製作所 電力用半導体モジュール及びアーク放電装置
EP2120263A4 (en) * 2007-11-30 2010-10-13 Panasonic Corp BASE PLATE FOR A HITZEABLEITENDE STRUCTURE, MODULE WITH THE BASE PLATE FOR THE HITZEABLEITENDE STRUCTURE AND METHOD FOR THE PRODUCTION OF THE BASE PLATE FOR THE HITZEABLEITENDE STRUCTURE
KR101454321B1 (ko) * 2008-01-22 2014-10-23 페어차일드코리아반도체 주식회사 절연 금속 기판을 구비하는 반도체 패키지 및 그 제조방법
DE102008031231B4 (de) * 2008-07-02 2012-12-27 Siemens Aktiengesellschaft Herstellungsverfahren für planare elektronsche Leistungselektronik-Module für Hochtemperatur-Anwendungen und entsprechendes Leistungselektronik-Modul
TW201011869A (en) * 2008-09-10 2010-03-16 Cyntec Co Ltd Chip package structure
US8076696B2 (en) * 2009-10-30 2011-12-13 General Electric Company Power module assembly with reduced inductance
CN101834267B (zh) * 2010-04-30 2013-07-10 深圳市奥伦德元器件有限公司 平面支架及封装方法
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
JP2013016629A (ja) * 2011-07-04 2013-01-24 Mitsubishi Electric Corp 半導体モジュール
JP5682511B2 (ja) * 2011-08-31 2015-03-11 サンケン電気株式会社 半導体モジュール
US9147637B2 (en) * 2011-12-23 2015-09-29 Infineon Technologies Ag Module including a discrete device mounted on a DCB substrate
EP2816598B1 (en) * 2012-02-13 2020-03-18 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method for manufacturing same
WO2013121522A1 (ja) 2012-02-14 2013-08-22 三菱電機株式会社 半導体装置
JP5656907B2 (ja) * 2012-04-11 2015-01-21 三菱電機株式会社 パワーモジュール
JP5859906B2 (ja) * 2012-04-20 2016-02-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP5863599B2 (ja) * 2012-08-21 2016-02-16 三菱電機株式会社 パワーモジュール
KR101443985B1 (ko) * 2012-12-14 2014-11-03 삼성전기주식회사 전력 모듈 패키지
CN105990265B (zh) * 2015-02-26 2019-04-05 台达电子工业股份有限公司 功率转换电路的封装模块及其制造方法
JP6613806B2 (ja) * 2015-10-23 2019-12-04 富士電機株式会社 半導体装置
US10438865B2 (en) * 2016-02-04 2019-10-08 Mitsubishi Electric Corporation Semiconductor device
JP6797289B2 (ja) * 2017-04-20 2020-12-09 三菱電機株式会社 電力変換装置
JP6395164B1 (ja) * 2017-04-20 2018-09-26 三菱電機株式会社 電力変換装置
US10679929B2 (en) * 2017-07-28 2020-06-09 Advanced Semiconductor Engineering Korea, Inc. Semiconductor package device and method of manufacturing the same
JP6870531B2 (ja) * 2017-08-21 2021-05-12 三菱電機株式会社 パワーモジュールおよび電力変換装置
JP6939392B2 (ja) * 2017-10-17 2021-09-22 三菱電機株式会社 パワーモジュール
US11257768B2 (en) * 2017-12-13 2022-02-22 Mitsubishi Electric Corporation Semiconductor device and power conversion device
DE102018214059A1 (de) * 2018-08-21 2020-02-27 Robert Bosch Gmbh Gehäuserahmen für ein Steuergerät, welcher zur elektrischen Außenkontaktierung eines Schaltungsträgers des Steuergeräts geeignet ist
US11081422B2 (en) * 2019-03-14 2021-08-03 Toyota Motor Engineering & Manufacturing North America, Inc. Self-healing PDMS encapsulation and repair of power modules
CN112805830A (zh) * 2019-04-01 2021-05-14 富士电机株式会社 半导体模块

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279653A (ja) 1985-10-03 1987-04-13 Fujitsu Ltd ハイブリツドｉｃのパツケ−ジング構造
JPH0278265A (ja) * 1988-09-14 1990-03-19 Nippon Inter Electronics Corp リードフレームおよびそのリードフレームを使用した複合半導体装置
JP3435271B2 (ja) * 1995-11-30 2003-08-11 三菱電機株式会社 半導体装置
JP3882252B2 (ja) * 1996-09-02 2007-02-14 富士電機機器制御株式会社 無接点式半導体接触器
US6069401A (en) * 1996-10-29 2000-05-30 Kabushiki Kaisha Toshiba Semiconductor chip
JPH10335579A (ja) * 1997-05-27 1998-12-18 Toshiba Corp 大電力半導体モジュール装置
JP2001085613A (ja) 1999-09-13 2001-03-30 Hitachi Ltd トランスファモールド型パワーモジュール
JP4177571B2 (ja) * 2001-09-20 2008-11-05 三菱電機株式会社 半導体装置
JP4262453B2 (ja) 2002-07-15 2009-05-13 三菱電機株式会社 電力半導体装置
JP3938113B2 (ja) * 2003-08-08 2007-06-27 株式会社日立製作所 複合材料及びその用途
JP4453498B2 (ja) * 2004-09-22 2010-04-21 富士電機システムズ株式会社 パワー半導体モジュールおよびその製造方法
JP2006179856A (ja) * 2004-11-25 2006-07-06 Fuji Electric Holdings Co Ltd 絶縁基板および半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101482317B1 (ko) * 2012-10-30 2015-01-13 삼성전기주식회사 단위 전력 모듈 및 이를 포함하는 전력 모듈 패키지
US9123683B2 (en) 2012-10-30 2015-09-01 Samsung Electro-Mechanics Co., Ltd. Unit power module and power module package comprising the same
US9853378B2 (en) 2013-02-07 2017-12-26 Samsung Electronics Co., Ltd. Substrate and terminals for power module and power module including the same
US10193250B2 (en) 2013-02-07 2019-01-29 Samsung Electronics Co., Ltd. Substrate and terminals for power module and power module including the same
KR20220001671A (ko) * 2020-06-30 2022-01-06 하나 마이크로일렉트로닉스 퍼블릭 씨오.,엘티디. 방열 클립을 구비한 전력 반도체 장치

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