CN110911375A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN110911375A CN110911375A CN201910852738.3A CN201910852738A CN110911375A CN 110911375 A CN110911375 A CN 110911375A CN 201910852738 A CN201910852738 A CN 201910852738A CN 110911375 A CN110911375 A CN 110911375A
- Authority
- CN
- China
- Prior art keywords
- semiconductor element
- conductive plate
- power terminal
- semiconductor
- sealing body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 278
- 238000007789 sealing Methods 0.000 claims abstract description 59
- 239000004020 conductor Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 6
- 239000003566 sealing material Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 239000011265 semifinished product Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种半导体装置,具备:第一导体板;单个第一半导体元件,配置于第一导体板的主面上;密封体,将第一半导体元件密封;及第一电力端子,在密封体的内部连接于第一导体板,并且从密封体沿着第一方向突出。第一导体板的主面具有位于第一电力端子侧的第一边和在第一方向上位于与第一边相反一侧的第二边。在第一方向上,从第一半导体元件到第一边的距离比从第一半导体元件到第二边的距离大。
Description
技术领域
本说明书公开的技术涉及半导体装置。
背景技术
在日本特开2014-154779号中公开了一种半导体装置。该半导体装置具备导体板、配置于导体板上的两个半导体元件及从导体板延伸的电力端子。
发明内容
在上述的半导体装置中,在各导体板中,两个半导体元件平衡地配置。这样,在以往的半导体装置中,一个或多个半导体元件在导体板上平衡地配置。因此,在导体板上存在单个半导体元件的半导体装置中,通常设计成半导体元件位于导体板的中央。然而,半导体装置的构造未必对称,例如关于电力端子,在很多时候设置于导体板的一侧。在该情况下,可考虑不是将半导体元件简单设置于导体板的中央,而是也考虑与电力端子的位置关系来相对于导体板配置半导体元件。本说明书通过提供为此的技术而能够谋求半导体装置的改善。
本说明书公开的半导体装置具备:第一导体板;单个第一半导体元件,配置于第一导体板的主面上;密封体,将第一半导体元件密封;及第一电力端子,在密封体的内部连接于第一导体板,并且从密封体沿着第一方向突出。第一导体板的主面具有位于第一电力端子侧的第一边和在第一方向上位于与第一边相反一侧的第二边。在第一方向上,从第一半导体元件到第一边的距离比从第一半导体元件到第二边的距离大。需要说明的是,“配置于第一导体板的主面上的单个第一半导体元件”意味着在将存在于第一导体板上的半导体元件设为第一半导体元件时仅存在一个第一半导体元件。
在上述的半导体装置中,在第一导体板上连接有第一电力端子。若是这样的结构,则第一电力端子的热可能会经由第一导体板而向第一半导体元件传递。例如,由于在第一电力端子中流动比较大的电流,所以第一电力端子有时会因此而发热。另外,第一电力端子在很多时候焊接于外部的电路构件(例如汇流条),在该焊接部位处,容易产生比较多的热。若这样的热向第一半导体元件传递,则会因第一半导体元件的温度上升而例如需要限制第一半导体元件的动作。关于这一点,根据上述的半导体装置的构造,第一半导体元件不是配置于第一导体板的中央,而是比较远离第一电力端子而配置。由此,能够抑制第一电力端子的热经由第一导体板而向第一半导体元件传递。
附图说明
图1示出实施例的半导体装置10的俯视图。
图2在与导体板22、24、26、28垂直的俯视下示出半导体装置10的内部构造。
图3示出图1中的III-III线处的剖视图。
图4示出半导体装置10的电路构造。
图5是说明第一半导体元件12相对于第一导体板22的配置及第二半导体元件14相对于第三导体板26的配置的图。
图6是说明第一半导体元件12相对于第二导体板24的配置及第二半导体元件14相对于第四导体板28的配置的图。
图7是说明第一半导体元件12及第二半导体元件14相对于第一接头部38的配置以及第一半导体元件12及第二半导体元件14相对于第二接头部40的配置的图。
图8是示出利用模具来成形密封用材料50a的工序的一时间点的图。
图9是示出利用模具来成形密封用材料50a的工序的一时间点且比图8晚的时间点的图。
具体实施方式
在本技术的一实施方式中,在所述的第一方向(即,第一电力端子突出的方向)上,从第一半导体元件到第一边的距离可以为第一半导体元件的尺寸的1/2以上。这样,从第一半导体元件到第一边的距离(即,大概从第一半导体元件到第一电力端子的距离)优选与以往的半导体装置相比充分变大。由此,能够有效地抑制第一电力端子的热经由第一导体板而向第一半导体元件传递。
在本技术的一实施方式中,在第一方向上,从第一半导体元件到第一边的距离可以为从第一半导体元件到第二边的距离的两倍以上。这样,第一半导体元件优选相对于第一导体板的中央充分偏置配置。由此,能够有效地抑制第一电力端子的热经由第一导体板而向第一半导体元件传递。
在本技术的一实施方式中,可以是,半导体装置还具备隔着第一半导体元件而与第一导体板对向的第二导体板,第二导体板具有在密封体的内部连接于第一半导体元件的主面。不过,在半导体装置具备第二导体板的情况下,第一电力端子的热可能会经由密封体及第二导体板而向第一半导体元件传递。因此,作为一个实施方式,第二导体板的主面可以具有位于第一电力端子侧的第一边和在第一方向上位于与第一边相反一侧的第二边。并且,在第一方向上,从第一半导体元件到第二导体板的第一边的距离可以比从第一半导体元件到第二导体板的第二边的距离大。根据这样的结构,能够抑制第一电力端子的热经由密封体及第二导体板(尤其是经由第二导体板)而向第一半导体元件传递。
在本技术的一实施方式中,半导体装置可以还具备:第三导体板,在与第一方向正交的第二方向上与第一导体板并排配置;单个第二半导体元件,在密封体的内部配置于第三导体板的主面上;及第二电力端子,在密封体的内部连接于第三导体板,并且从密封体沿着第一方向突出。不过,若是这样的构造,则第二电力端子的热可能会经由第三导体板而向第二半导体元件传递。因此,作为一个实施方式,第三导体板的主面可以具有位于第二电力端子侧的第一边和在第一方向上位于与第一边相反一侧的第二边。并且,在第一方向上,从第二半导体元件到第三导体板的第一边的距离可以比从第二半导体元件到第三导体板的第二边的距离大。根据这样的结构,能够抑制第二电力端子的热经由第三导体板而向第二半导体元件传递。需要说明的是,“配置于第三导体板的主面上的单个第二半导体元件”意味着在将存在于第三导体板上的半导体元件设为第二半导体元件时仅存在一个第二半导体元件。
在本技术的一实施方式中,第三导体板可以经由位于第二导体板与第三导体板之间的第一接头部而连接于第二导体板。在该情况下,在与第三导体板垂直的俯视下,优选在将第一接头部沿着第二方向假想地扩张而得到的范围内包括第一半导体元件及第二半导体元件各自的1/2以上。根据这样的结构,第一接头部相对于第一半导体元件及第二半导体元件比较接近配置。由于第一半导体元件与第一接头部之间的电流路径和第二半导体元件与第一接头部之间的电流路径变短,所以能够减少这些路径中的电损失。
在本技术的一实施方式中,半导体装置可以还具备:第四导体板,隔着第二半导体元件而与第三导体板对向;及第三电力端子,在密封体的内部连接于第四导体板,并且从密封体沿着第一方向突出。在该情况下,第四导体板可以在第二方向上与第二导体板并排配置,经由第二接头部而连接于第三电力端子。并且,在与第四导体板垂直的俯视下,所述第二接头部可以位于第二导体板与第四导体板之间并且位于第三电力端子与第一接头部之间。
在上述的一实施方式中,虽然没有特别的限定,但在与第四导体板垂直的俯视下,优选在将第二接头部沿着第二方向假想地扩张而得到的范围内既不包括第一半导体元件也不包括第二半导体元件。根据这样的结构,第一半导体元件及第二半导体元件位于远离第二接头部及第三电力端子的位置,因此能够抑制第三电力端子的热向第一半导体元件及第二半导体元件传递。
以下,关于本技术的代表性的且非限定性的具体例,参照附图来详细说明。该详细的说明单纯意在将用于实施本技术的几个例子的详情向本领域技术人员展示,并非意在限定本公开的范围。另外,以下公开的追加性的特征以及技术能够为了提供进一步改善后的半导体装置以及其使用方法及制造方法而与其他的特征、技术相独立地使用或者一起使用。
另外,在以下的详细说明中公开的特征、工序的组合并非在最广泛的含义下实施本公开时所必需的,仅为了特别说明本公开的代表性的具体例而记载。而且,上述及下述的代表性的具体例的各种特征以及独立及从属权利要求所记载的内容的各种特征在提供本公开的追加性的且有用的实施方式时并非必需如这里记载的具体例这样或者如列举的顺序这样组合。
本说明书和/或权利要求书所记载的全部特征意在与实施例和/或权利要求所记载的特征的结构相独立地作为对于申请当初的公开以及声明的特定事项的限定而分别且互相独立地公开。而且,所有与数值范围及组或集团相关的记载作为对于申请当初的公开以及声明的特定事项的限定而带着公开它们的中间的结构的意图进行。
【实施例】
参照附图,对实施例的半导体装置10进行说明。本实施例的半导体装置10是功率半导体装置,例如能够在电动汽车、混合动力车、燃料电池车之类的电动汽车中使用于转换器、变换器之类的电力变换电路。不过,半导体装置10的用途没有特别的限定。半导体装置10能够在各种装置、电路中广泛地采用。
如图1~图4所示,半导体装置10具备第一半导体元件12、第二半导体元件14及将这些半导体元件12、14密封的密封体50。密封体50由绝缘性材料构成。虽然没有特别的限定,但本实施例中的密封体50是将密封用材料(例如环氧树脂)利用模具100(参照图8、图9)成形而得到的。
两个半导体元件12、14是功率半导体元件,互相具有相同的结构。第一半导体元件12具有下表面电极12a、上表面电极12b及多个信号焊盘12c。下表面电极12a位于第一半导体元件12的下表面,上表面电极12b及多个信号焊盘12c位于第一半导体元件12的上表面。同样,第二半导体元件14具有下表面电极14a、上表面电极14b及多个信号焊盘14c。
虽是一例,各半导体元件12、14是RC(Reverse Conducting:逆导)-IGBT(Insulated Gate Bipolar Transistor:绝缘栅双极型晶体管),在单个半导体基板上一体形成有IGBT和二极管。IGBT的集电极及二极管的阴极连接于下表面电极12a、14a,IGBT的发射极及二极管的阳极连接于上表面电极12b、14b。需要说明的是,各半导体元件12、14不限定于RC-IGBT,也可以单纯的IGBT、MOSFET(Metal-Oxide-Semiconductor Field-EffectTransistor:金属氧化物半导体场效应晶体管)之类的其他种类的功率半导体元件。另外,关于半导体基板的材料也没有特别的限定,例如可以是硅(Si)、碳化硅(SiC)或氮化物半导体。
半导体装置10还具备第一导体板22、第二导体板24、第三导体板26及第四导体板28。各导体板22、24、26、28由铜或其他金属之类的导体构成。需要说明的是,各导体板22、24、26、28也可以是在绝缘体的基板上形成有导体层的层叠基板(也被称作绝缘基板)。第一导体板22与第二导体板24互相对向,在它们之间配置有第一半导体元件12。第一半导体元件12的下表面电极12a软钎焊于第一导体板22的主面23,第一半导体元件12的上表面电极12b隔着导体间隔件13而软钎焊于第二导体板24的主面25。第一导体板22的主面23和第二导体板24的主面25分别位于密封体50的内部,互相对向。
同样,第三导体板26与第四导体板28互相对向,在它们之间配置有第二半导体元件14。第二半导体元件14的下表面电极14a软钎焊于第三导体板26的主面27,第二半导体元件14的上表面电极14b隔着导体间隔件15而软钎焊于第四导体板28的主面29。第三导体板26的主面27和第四导体板28的主面29分别位于密封体50的内部,互相对向。
第三导体板26在位于密封体50的内部的第一接头部38处与第二导体板24电连接。由此,第一半导体元件12与第二半导体元件14串联地电连接。虽是一例,第一接头部38位于第二导体板24与第三导体板26之间,第一接头部38的一部分与第二导体板24一体形成,第一接头部38的另外的一部分与第三导体板26一体形成。不过,作为其他实施方式,第一接头部38的至少一部分也可以由从第二导体板24及第三导体板26独立的构件构成。
第一导体板22在密封体50的下表面向外部露出,第二导体板24在密封体50的上表面向外部露出。由此,第一导体板22及第二导体板24不仅在半导体装置10中构成导电路径的一部分,也作为将第一半导体元件12的热向外部放出的散热板发挥功能。同样,第三导体板26在密封体50的下表面向外部露出,第四导体板28在密封体50的上表面向外部露出。由此,第三导体板26及第四导体板28也不仅在半导体装置10中构成导电路径的一部分,也作为将第二半导体元件14的热向外部放出的散热板发挥功能。
半导体装置10还具备第一电力端子32(P端子)、第二电力端子34(O端子)及第三电力端子36(N端子)。各电力端子32、34、36横跨密封体50的内外而延伸。虽是一例,三个电力端子32、34、36互相平行,从密封体50沿着第一方向(图1、图2中的上下方向)突出。第一电力端子32在密封体50的内部连接于第一导体板22。第二电力端子34在密封体50的内部连接于第三导体板26。并且,第三电力端子36在密封体50的内部连接于第四导体板28。
虽然没有特别的限定,但在本实施例中,第一电力端子32与第一导体板22一体形成,第二电力端子34与第三导体板26一体形成。第三电力端子36经由第二接头部40而连接于第四导体板28。虽是一例,第二接头部40位于第二导体板24与第四导体板28之间,第二接头部40的一部分与第四导体板28一体形成,第二接头部40的另外的一部分与第三电力端子36一体形成。不过,作为其他实施方式,第二接头部40的至少一部分也可以由从第四导体板28及第三电力端子36独立的构件构成。
半导体装置10还具备多个第一信号端子42和多个第二信号端子44。这些信号端子42、44位于与三个电力端子32、34、36相反一侧。各信号端子42、44横跨密封体50的内外而延伸。多个第一信号端子42互相平行,从密封体50沿着第一方向(图1、图2中的上下方向)突出。多个第一信号端子42在密封体50的内部分别连接于第一半导体元件12的多个信号焊盘12c。在多个第一信号端子42中例如包括连接于第一半导体元件12的IGBT的栅极的栅极信号端子(参照图4)。在本实施例中,多个第一信号端子42与多个信号焊盘12c之间经由键合线46而连接。不过,作为其他实施方式,多个第一信号端子42与多个信号焊盘12c之间例如也可以通过软钎焊、硬钎焊等而直接连接。
同样,多个第二信号端子44互相平行,从密封体50沿着第一方向突出。多个第二信号端子44在密封体50的内部分别连接于第二半导体元件14的多个信号焊盘14c。在多个第二信号端子44中例如包括连接于第二半导体元件14的IGBT的栅极的栅极信号端子。在本实施例中,多个第二信号端子44与多个信号焊盘14c之间经由键合线48而连接。不过,作为其他实施方式,多个第二信号端子44与多个信号焊盘14c之间例如也可以通过软钎焊、硬钎焊等而直接连接。
通过以上的结构,在本实施例的半导体装置10中,第一电力端子32与第二电力端子34之间经由第一半导体元件12而连接,第二电力端子34与第三电力端子36之间经由第二半导体元件14而连接。并且,通过经由第一信号端子42而提供栅极驱动信号,能够将第一半导体元件12的IGBT导通及截止。另外,通过经由第二信号端子44而提供栅极驱动信号,能够将第二半导体元件14的IGBT导通及截止。由于具有这样的结构,所以本实施例的半导体装置10能够在转换器、变换器之类的电力变换电路中构成上下一对的臂。
在本实施例的半导体装置10中,在第一导体板22上连接有第一电力端子32。若是这样的结构,则第一电力端子32的热可能会经由第一导体板22而向第一半导体元件12传递。例如,由于在第一电力端子32中流动比较大的电流,所以第一电力端子32有时会因此而发热。另外,第一电力端子32在很多时候焊接于外部的电路构件(例如汇流条),在该焊接部位处,容易产生比较多的热。若这样的热向第一半导体元件12传递,则会因第一半导体元件12的温度上升而例如需要限制第一半导体元件12的动作。
关于上述的点,在本实施例的半导体装置10中,第一半导体元件12相对于第一导体板22的中央以远离第一电力端子32的方式偏置。若详细说明,则如图5所示,第一导体板22的主面23大体为矩形状,具有位于第一电力端子32侧的第一边23a和在第一方向上位于与第一边23a相反一侧的第二边23b。并且,在第一方向上,从第一半导体元件12到第一边23a的距离D1比从第一半导体元件12到第二边23b的距离D2大。需要说明的是,如前所述,第一方向是第一电力端子32从密封体50突出的方向,是图5中的上下方向。这样,通过第一半导体元件12比较远离第一电力端子32而配置,能够抑制第一电力端子32的热经由第一导体板22而向第一半导体元件12传递。
尤其是,在本实施例的半导体装置10中,在第一方向上,从第一半导体元件12到第一边23a的距离D1为第一半导体元件12的尺寸S1的1/2以上。这样,从第一半导体元件12到第一边23a的距离D1(即,大概从第一半导体元件12到第一电力端子32的距离)与以往的半导体装置相比充分大。由此,能够有效地抑制第一电力端子32的热经由第一导体板22而向第一半导体元件12传递。
除此之外,在本实施例的半导体装置10中,在第一方向上,从第一半导体元件12到第一边23a的距离D1为从第一半导体元件12到第二边23b的距离D2的两倍以上。由此,第一半导体元件12相对于第一导体板22的中央充分偏置配置。因此,能够有效地抑制第一电力端子32的热经由第一导体板22而向第一半导体元件12传递。
如前所述,本实施例的半导体装置10还具备第二导体板24。第二导体板24隔着第一半导体元件12而与第一导体板22对向,具有在密封体50的内部连接于第一半导体元件12的主面25。第二导体板24与第一电力端子32相邻,因此可能会将第一电力端子32的热向第一半导体元件12传递。因此,第一半导体元件12相对于第二导体板24的中央也以远离第一电力端子32的方式偏置。
详细而言,如图6所示,第二导体板24的主面25大体为矩形状,具有位于第一电力端子32侧的第一边25a和在第一方向上位于与第一边25a相反一侧的第二边25b。在第一方向上,从第一半导体元件12到第二导体板24的第一边25a的距离D5比从第一半导体元件12到第二导体板24的第二边25b的距离D6大。由此,能够抑制第一电力端子32的热经由密封体50及第二导体板24(尤其是经由第二导体板24)而向第一半导体元件12传递。
在第二导体板24中也是,在第一方向上,从第一半导体元件12到第一边25a的距离D5为第一半导体元件12的尺寸S1的1/2以上。除此之外,在第一方向上,从第一半导体元件12到第一边25a的距离D5为从第一半导体元件12到第二边25b的距离D6的两倍以上。通过这些结构,能够有效地抑制第一电力端子32的热经由密封体50及第二导体板24而向第一半导体元件12传递。
如前所述,本实施例的半导体装置10还具备第三导体板26。第三导体板26在与第一方向正交的第二方向上与第一导体板22并排配置。在第三导体板26上连接有第二电力端子34,第二电力端子34从密封体50沿着第一方向延伸。根据这样的构造,第二电力端子34的热可能会经由第三导体板26而向第二半导体元件14传递。因此,第二半导体元件14也是相对于第三导体板26的中央以远离第二电力端子34的方式偏置。
详细而言,如图5所示,第三导体板26的主面27大体为矩形状,具有位于第二电力端子34侧的第一边27a和在第一方向上位于与第一边27a相反一侧的第二边27b。并且,在第一方向上,从第二半导体元件14到第三导体板26的第一边27a的距离D3比从第二半导体元件14到第三导体板26的第二边27b的距离D4大。根据这样的结构,能够抑制第二电力端子34的热经由第三导体板26而向第二半导体元件14传递。
在第三导体板26中也是,在第一方向上,从第二半导体元件14到第一边27a的距离D3为第二半导体元件14的尺寸S2的1/2以上。除此之外,在第一方向上,从第二半导体元件14到第一边27a的距离D3为从第二半导体元件14到第二边27b的距离D4的两倍以上。通过这些结构,能够有效地抑制第二电力端子34的热经由第三导体板26而向第二半导体元件14传递。
如前所述,本实施例的半导体装置10还具备第四导体板28。第四导体板28隔着第二半导体元件14而与第三导体板26对向,具有在密封体50的内部连接于第二半导体元件14的主面29。第四导体板28与第二电力端子34相邻,因此可能会将第二电力端子34的热向第二半导体元件14传递。另外,第四导体板28连接于第三电力端子36,因此可能会将第三电力端子36的热向第二半导体元件14传递。因此,第二半导体元件14相对于第四导体板28的中央也以远离第二电力端子34及第三电力端子36的方式偏置。
详细而言,如图6所示,第四导体板28的主面29大体为矩形状,具有位于第二电力端子34侧的第一边29a和在第一方向上位于与第一边29a相反一侧的第二边29b。在第一方向上,从第二半导体元件14到第四导体板28的第一边29a的距离D7比从第二半导体元件14到第四导体板28的第二边29b的距离D8大。由此,能够抑制第二电力端子34和第三电力端子36的热经由第四导体板28而向第二半导体元件14传递。
在第四导体板28中也是,在第一方向上,从第二半导体元件14到第一边29a的距离D7为第二半导体元件14的尺寸S2的1/2以上。除此之外,在第一方向上,从第二半导体元件14到第一边29a的距离D7为从第二半导体元件14到第二边29b的距离D8的两倍以上。通过这些结构,能够有效地抑制第二电力端子34及第三电力端子36的热经由第四导体板28而向第二半导体元件14传递。
在本实施例的半导体装置10中,第三导体板26经由位于第二导体板24与第三导体板26之间的第一接头部38而连接于第二导体板24。虽然没有特别的限定,但第一接头部38优选与第一半导体元件12及第二半导体元件14接近,由此,能够缩短在半导体装置10内流动的电流的路径。具体而言,如图7所示,在与第三导体板26垂直的俯视下,优选在将第一接头部38沿着第二方向假想地扩张而得到的范围R1内包括第一半导体元件12及第二半导体元件14的各自的1/2以上。根据这样的结构,第一接头部38相对于第一半导体元件12及第二半导体元件14充分接近配置。由于第一半导体元件12与第一接头部38之间的电流路径和第二半导体元件14与第一接头部38之间的电流路径变短,所以能够减少这些路径中的电损失。
在本实施例的半导体装置10中,第三电力端子36经由第二接头部40而连接于第四导体板28。虽然没有特别的限定,但第二接头部40优选远离第一半导体元件12及第二半导体元件14,由此,能够抑制第三电力端子36的热向第一半导体元件12及第二半导体元件14传递。具体而言,如图7所示,在与第四导体板28垂直的俯视下,优选在将第二接头部40沿着第二方向假想地扩张而得到的范围R2内既不包括第一半导体元件12也不包括第二半导体元件14。根据这样的结构,第一半导体元件12及第二半导体元件14位于远离第二接头部40及第三电力端子36的位置,因此能够抑制第三电力端子36的热向第一半导体元件12及第二半导体元件14传递。
接着,对半导体装置10的制造方法进行说明。不过,该说明不对半导体装置10的制造方法进行限定。如图8所示,在半导体装置10的制造方法中,将半导体装置10的半成品10a相对于模具100的空腔102放置。接着,向该空腔102内注入熔融后的密封用材料50a(例如,环氧树脂之类的绝缘性材料),进行密封体50的成形。在此,半成品10a的结构等于从半导体装置10去除了密封体50的结构。不过,关于多个电力端子32、34、36及多个信号端子42、44,也可以是其一部分或全部一体化的引线框架的形态。
在模具100设置有入口104,密封用材料50a从入口104向空腔102内流入。流入到空腔102的密封用材料50a向第一导体板22与第二导体板24之间和第三导体板26与第四导体板28之间行进。在第一导体板22与第二导体板24之间,密封用材料50a向第一半导体元件12的两侧分开流动,在超过了第一半导体元件12的位置处再次汇合。此时,在密封用材料50a汇合的位置处,有时会向密封用材料50a与第一半导体元件12之间卷入空气52。若这样的空气52残留于完成后的半导体装置10的密封体50,则例如可能会对半导体装置10的耐久性造成影响。尤其是,若空气52位于第一半导体元件12与密封体50之间(即,若空气52与第一半导体元件12接触),则对半导体装置10造成的影响变大。
如前所述,在本实施例的半导体装置10中,第一半导体元件12不位于第一导体板22及第二导体板24的中央,而是从它们的中央偏置。关于这一点,在半成品10a中也是同样的。由此,第一半导体元件12相对于模具100的入口104比较接近,上述的空气52的卷入在比较早的阶段发生。因此,在空气52的卷入发生之后,密封用材料50a的注入也会持续比较长的时间。其结果,如图9所示,卷入的空气52随着密封用材料50a的流动而以离开第一半导体元件12的方式移动。这样,即使向密封用材料50a内卷入了空气52,在完成后的半导体装置10中,该空气52(即,气泡)也位于远离第一半导体元件12的位置。由此,即使在密封体50内残留空气52,也能够减少半导体装置10因此而受到的影响。关于第三导体板26与第四导体板28之间也是同样,能够抑制由密封用材料50a卷入的空气以与第二半导体元件14接触的状态残留。
标号说明
10:半导体装置
12:第一半导体元件
14:第二半导体元件
22:第一导体板
24:第二导体板
26:第三导体板
28:第四导体板
32:第一电力端子
34:第二电力端子
36:第三电力端子
38:第一接头部
40:第二接头部
50:密封体。
Claims (9)
1.一种半导体装置,具备:
第一导体板;
单个第一半导体元件,配置于所述第一导体板的主面上;
密封体,将所述第一半导体元件密封;及
第一电力端子,在所述密封体的内部连接于所述第一导体板,并且从所述密封体沿着第一方向突出,
所述第一导体板的所述主面具有位于所述第一电力端子侧的第一边和在所述第一方向上位于与所述第一边相反一侧的第二边,
在所述第一方向上,从所述第一半导体元件到所述第一边的距离比从所述第一半导体元件到所述第二边的距离大。
2.根据权利要求1所述的半导体装置,
在所述第一方向上,从所述第一半导体元件到所述第一边的所述距离为所述第一半导体元件的尺寸的1/2以上。
3.根据权利要求1或2所述的半导体装置,
在所述第一方向上,从所述第一半导体元件到所述第一边的所述距离为从所述第一半导体元件到所述第二边的所述距离的两倍以上。
4.根据权利要求1~3中任一项所述的半导体装置,
还具备隔着所述第一半导体元件而与所述第一导体板对向的第二导体板,
所述第二导体板具有在所述密封体的内部连接于所述第一半导体元件的主面。
5.根据权利要求4所述的半导体装置,
所述第二导体板的所述主面具有位于所述第一电力端子侧的第一边和在所述第一方向上位于与所述第一边相反一侧的第二边,
在所述第一方向上,从所述第一半导体元件到所述第二导体板的所述第一边的距离比从所述第一半导体元件到所述第二导体板的所述第二边的距离大。
6.根据权利要求4或5所述的半导体装置,还具备:
第三导体板,在与所述第一方向正交的第二方向上,与所述第一导体板并排配置;
单个第二半导体元件,在所述密封体的内部配置于所述第三导体板的主面上;及
第二电力端子,在所述密封体的内部连接于所述第三导体板,并且从所述密封体沿着所述第一方向突出,
所述第三导体板的所述主面具有位于所述第二电力端子侧的第一边和在所述第一方向上位于与所述第一边相反一侧的第二边,
在所述第一方向上,从所述第二半导体元件到所述第三导体板的所述第一边的距离比从所述第二半导体元件到所述第三导体板的所述第二边的距离大。
7.根据权利要求6所述的半导体装置,
所述第三导体板经由位于所述第二导体板与所述第三导体板之间的第一接头部而连接于所述第二导体板,
在与所述第三导体板垂直的俯视下,在将所述第一接头部沿着所述第二方向假想地扩张而得到的范围内包括所述第一半导体元件及所述第二半导体元件各自的1/2以上。
8.根据权利要求7所述的半导体装置,还具备:
第四导体板,隔着所述第二半导体元件而与所述第三导体板对向;及
第三电力端子,在所述密封体的内部连接于所述第四导体板,并且从所述密封体沿着所述第一方向突出,
所述第四导体板在所述第二方向上与所述第二导体板并排配置,并且经由第二接头部而连接于所述第三电力端子,
在与所述第四导体板垂直的俯视下,所述第二接头部位于所述第二导体板与所述第四导体板之间,并且位于所述第三电力端子与所述第一接头部之间。
9.根据权利要求8所述的半导体装置,
在与所述第四导体板垂直的所述俯视下,在将所述第二接头部沿着所述第二方向假想地扩张而得到的范围内既不包括所述第一半导体元件也不包括所述第二半导体元件。
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JP2017208385A (ja) * | 2016-05-16 | 2017-11-24 | 株式会社デンソー | 電子装置 |
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