JP2019009295A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019009295A JP2019009295A JP2017123955A JP2017123955A JP2019009295A JP 2019009295 A JP2019009295 A JP 2019009295A JP 2017123955 A JP2017123955 A JP 2017123955A JP 2017123955 A JP2017123955 A JP 2017123955A JP 2019009295 A JP2019009295 A JP 2019009295A
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- cooling plate
- semiconductor chip
- case
- circuit pattern
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000001816 cooling Methods 0.000 claims abstract description 95
- 239000012212 insulator Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 claims abstract description 6
- 239000011810 insulating material Substances 0.000 claims description 18
- 230000000740 bleeding effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 8
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000004519 grease Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910007880 ZrAl Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
本発明の実施の形態について、図面を用いて以下に説明する。図1は、実施の形態に係る半導体装置100の断面図である。図2は、半導体装置100が備えるケース13の斜視図である。
次に、実施の形態の変形例について説明する。図3は、実施の形態の変形例に係る半導体装置100Aの断面図である。
Claims (4)
- 絶縁体上に配置された回路パターンを備える第1冷却板と、
前記第1冷却板と対面して配置され、絶縁体上に配置された回路パターンを備える第2冷却板と、
前記第1冷却板の前記回路パターンと前記第2冷却板の前記回路パターンとの間に接合材により接合された半導体チップと、
前記第1冷却板および前記第2冷却板の外周部を保持し、かつ、前記第1冷却板および前記第2冷却板の一部と前記半導体チップとを収容するケースと、
を備え、
前記半導体チップは、前記第1冷却板と前記第2冷却板との間の半導体チップ搭載部に搭載され、
前記ケースにおける前記半導体チップ搭載部およびその周辺に対応する部分の上下幅は、前記ケースにおける他の部分の上下幅より大きい、半導体装置。 - 前記ケースの上下幅は連続的に変化する、請求項1記載の半導体装置。
- 前記ケースは、前記ケース内に絶縁材を注入するための第1開口部と、前記絶縁材の注入時にエア抜きをするための第2開口部とを備え、
前記第2開口部は、前記第1開口部に対向する位置であり、かつ、前記第1開口部より上方に設けられた、請求項1記載の半導体装置。 - 前記半導体装置は自動車用半導体モジュールである、請求項1から請求項3のいずれか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017123955A JP6762271B2 (ja) | 2017-06-26 | 2017-06-26 | 半導体装置 |
US15/900,885 US11069593B2 (en) | 2017-06-26 | 2018-02-21 | Semiconductor device |
DE102018209231.1A DE102018209231B4 (de) | 2017-06-26 | 2018-06-11 | Halbleitervorrichtung |
CN201810643210.0A CN109119379B (zh) | 2017-06-26 | 2018-06-21 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017123955A JP6762271B2 (ja) | 2017-06-26 | 2017-06-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019009295A true JP2019009295A (ja) | 2019-01-17 |
JP6762271B2 JP6762271B2 (ja) | 2020-09-30 |
Family
ID=64567771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017123955A Active JP6762271B2 (ja) | 2017-06-26 | 2017-06-26 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11069593B2 (ja) |
JP (1) | JP6762271B2 (ja) |
CN (1) | CN109119379B (ja) |
DE (1) | DE102018209231B4 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010098097A (ja) * | 2008-10-16 | 2010-04-30 | Denso Corp | モールドパッケージの製造方法 |
JP2013211942A (ja) * | 2012-03-30 | 2013-10-10 | Hitachi Automotive Systems Ltd | パワー半導体モジュール |
JP2013258334A (ja) * | 2012-06-13 | 2013-12-26 | Denso Corp | 半導体装置及びその製造方法 |
JPWO2012120594A1 (ja) * | 2011-03-04 | 2014-07-07 | 日立オートモティブシステムズ株式会社 | 半導体モジュール、および半導体モジュールの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4106052A (en) * | 1975-04-19 | 1978-08-08 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. | Semiconductor rectifier unit having a base plate with means for maintaining insulating wafers in a desired position |
JPS63224347A (ja) * | 1987-03-13 | 1988-09-19 | Toyo Electric Mfg Co Ltd | 半導体装置 |
US4796156A (en) * | 1987-12-04 | 1989-01-03 | General Electric Company | Self packaging chip mount |
US5327325A (en) * | 1993-02-08 | 1994-07-05 | Fairchild Space And Defense Corporation | Three-dimensional integrated circuit package |
JP3507682B2 (ja) | 1998-01-09 | 2004-03-15 | 株式会社東芝 | 半導体モジュール |
US6992382B2 (en) * | 2003-12-29 | 2006-01-31 | Intel Corporation | Integrated micro channels and manifold/plenum using separate silicon or low-cost polycrystalline silicon |
TWI257135B (en) * | 2005-03-29 | 2006-06-21 | Advanced Semiconductor Eng | Thermally enhanced three dimension package and method for manufacturing the same |
JP5251991B2 (ja) * | 2011-01-14 | 2013-07-31 | トヨタ自動車株式会社 | 半導体モジュール |
JP5588895B2 (ja) | 2011-02-28 | 2014-09-10 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュール,パワー半導体モジュールの製造方法及び電力変換装置 |
JP5663462B2 (ja) * | 2011-12-15 | 2015-02-04 | 日立オートモティブシステムズ株式会社 | パワー半導体モジュールおよびパワーモジュール |
DE112012005457B4 (de) * | 2012-02-14 | 2018-07-12 | Mitsubishi Electric Corporation | Halbleitervorrichtung mit elektrisch isolierten Kommunikationsvorrichtungen zur Ansteuerung |
JP6286320B2 (ja) | 2014-08-07 | 2018-02-28 | 日立オートモティブシステムズ株式会社 | パワーモジュール |
KR20160023975A (ko) * | 2014-08-21 | 2016-03-04 | 삼성전자주식회사 | 반도체 패키지 |
JP6424573B2 (ja) * | 2014-11-06 | 2018-11-21 | トヨタ自動車株式会社 | 半導体装置 |
-
2017
- 2017-06-26 JP JP2017123955A patent/JP6762271B2/ja active Active
-
2018
- 2018-02-21 US US15/900,885 patent/US11069593B2/en active Active
- 2018-06-11 DE DE102018209231.1A patent/DE102018209231B4/de active Active
- 2018-06-21 CN CN201810643210.0A patent/CN109119379B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010098097A (ja) * | 2008-10-16 | 2010-04-30 | Denso Corp | モールドパッケージの製造方法 |
JPWO2012120594A1 (ja) * | 2011-03-04 | 2014-07-07 | 日立オートモティブシステムズ株式会社 | 半導体モジュール、および半導体モジュールの製造方法 |
JP2013211942A (ja) * | 2012-03-30 | 2013-10-10 | Hitachi Automotive Systems Ltd | パワー半導体モジュール |
JP2013258334A (ja) * | 2012-06-13 | 2013-12-26 | Denso Corp | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE102018209231B4 (de) | 2021-06-17 |
CN109119379A (zh) | 2019-01-01 |
DE102018209231A1 (de) | 2018-12-27 |
US11069593B2 (en) | 2021-07-20 |
JP6762271B2 (ja) | 2020-09-30 |
CN109119379B (zh) | 2022-03-01 |
US20180374772A1 (en) | 2018-12-27 |
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