JP6272806B2 - 2つの金属表面を永久的に接続するための方法 - Google Patents
2つの金属表面を永久的に接続するための方法 Download PDFInfo
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- JP6272806B2 JP6272806B2 JP2015170134A JP2015170134A JP6272806B2 JP 6272806 B2 JP6272806 B2 JP 6272806B2 JP 2015170134 A JP2015170134 A JP 2015170134A JP 2015170134 A JP2015170134 A JP 2015170134A JP 6272806 B2 JP6272806 B2 JP 6272806B2
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- metal
- diffusion
- bonding
- contact
- layer
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- 229910052751 metal Inorganic materials 0.000 title claims description 97
- 239000002184 metal Substances 0.000 title claims description 97
- 238000000034 method Methods 0.000 title claims description 73
- 238000009792 diffusion process Methods 0.000 claims description 36
- 230000007547 defect Effects 0.000 claims description 15
- 230000003746 surface roughness Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 239000002082 metal nanoparticle Substances 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 40
- 125000004429 atom Chemical group 0.000 description 18
- 239000007789 gas Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 229910052755 nonmetal Inorganic materials 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum-germanium Chemical compound 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005324 grain boundary diffusion Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018082 Cu3Sn Inorganic materials 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
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- 238000007781 pre-processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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Description
この方法においては、金属接触面が、先行技術から知られている手法で形成される。それに関して一般的な方法ステップは、いわゆる「シード層」の堆積である。シード層は、金属(例えば銅)の電気化学体積を可能にするために用いられる。このとき、メタライゼーションは、リソグラフィと、いわゆるメッキマスクの決定とによって、必要な構造化(接触領域と、接触領域の周囲に隣接する非金属領域とにおける)を得る。金属の電気化学堆積の後、当該金属は、大抵は化学機械研磨(CMP)によって研磨され、それによって、平らな表面と、非常に小さい表面粗さ(<2nm、理想的には<1nm、さらに好ましくは<0.5nm二乗平均平方根[rms]、2×2μmAFMスキャナで測定)とが保証される。これらの方法は、業界では十分に知られている。ボンディング界面の構成に応じて、金属パッドを取り囲む非金属領域は、二酸化ケイ素、有機絶縁体材料、又は、その他適切な材料から構成され得る。このとき、金属領域と周辺領域との間のトポグラフィは、金属領域も非金属領域も同時に接触することでトポグラフィが存在しないように、又は、別の選択肢として、非金属領域を金属領域に対してわずかに下げて(例えば、約100A、好ましくは1000A又は2000A)、金属領域のみが互いに接触するように選択され得る。金属の電気化学堆積とは別に、スパッタリング等の他の手法も考慮対象になる。
金属堆積プロセスの適切な選択において、質の低い金属層を形成することが可能である。大抵の場合、これは所望されない。なぜなら、これらの層の電気伝導性は限られているからである。これは、金属構造の準最適な形態に起因する。本発明においては、この効果が利用される。ここでは、まず業界で一般的な方法で金属表面が形成される。これについては、上述の説明が参照される。これらの層には、質の低い、非常に薄い金属層が載置される。典型的には、この層の厚さは、<3nm、より良くは<2nm、より理想的には<1nm又は<0.5nmに選択される。この層は、両方の接触面上、又は別の選択肢として、片側の面にのみ載置され得る。このとき、厚さが対応して最適化される。引き続いて、従来一般的であるように、接触面が接触させられ、加熱される。このとき、表面欠陥は一掃され、接触面では、両表面間に拡散ボンディングが成立する。このとき、質の低い金属層は、この拡散ボンディングの成立を促進する。こ(れら)の層の形成は、このような堆積プロセスに関する従来のプロセスパラメータを通じて制御可能である。このとき、層の質に影響を与えるパラメータは、業界では知られており、専門の関連文献でも明らかである。ここで、大抵の場合重要なのは、堆積温度、堆積システムのプロセスチャンバ内の環境圧力、並びに、堆積システムの堆積チャンバ内に存在するガス及び環境条件の選択である。そのために適した方法は、例えばスパッタリングプロセスであり、当該プロセスは通常、準最適と見なされるプロセス条件(例えばプロセス温度が低い)のもとで行われる。
すでに学術文献から知られていることに、<100nm、理想的には<70nm、より良くは<50nm〜30nm、好ましくは<20nm又は<10nmの大きさの金属粒子(例えば金、しかしまた銅も)は、融点より低い温度で、粒子の大きさによっては融点よりもはるかに低い温度で熱処理を行う際、均質で連続した金属構造に結びつくという特性を有している。この特性は、このような粒子が、薄層の形態で、金属接触面の片面又は両面に塗布されることによって、ボンディングプロセスのために利用できる。引き続いて、これらの接触面は接触させられ、熱処理が行われる。当該熱処理の間に、このナノ粒子は、粒子間のボンディングも、金属接触面とのボンディングも可能にし、結果として、両方の金属接触面同士の完全なボンディングを可能にする。これは、当該ナノ粒子がそれ自身非常に反応性であり、特に同じ金属から構成された金属表面と理想的に結びつく特性を有していることによって可能になる。小さい粒子を用いる場合、この接続は、すでに<250℃、理想的には<200℃、より好ましくは<150℃、非常に小さい粒子の場合には<120℃ですら行われ得る。
拡散ボンディングを同様に加速し、特に温度が著しく低下した場合にボンディングを行うためのさらなる可能性は、表面を、表面粗さに関して対応して最適化することである。基本原則は、表面リップル及び粗さの平坦化にある。二乗平均平方根(RMS)粗さは、ナノメートル領域内であるべきである。調整された粗さは、均質でなければならない。すなわち、原子間力顕微鏡(AFM)で測定する平均波長と、山‐谷断面の平均振幅とは、表面全体において同じでなければならない。これは、接触の際に表面が互いに干渉し、1つの表面の山が、もう1つの表面の谷をふさぎ、その逆も行われるために必要な前提条件である。この最適化された接触によって、拡散ボンディングの成立が著しく促進され、比較的低い温度でも可能になる。
‐金属表面の接続の際、特に処理の後数分の間に、永久的で、少なくとも専ら両金属表面の特に同種の、好ましくは同じ金属イオン及び/又は金属原子間の置換拡散によって形成される、導電性を有する接続が形成可能であるように、第1の金属表面と第2の金属表面とを処理するステップ、
‐第1の金属表面と第2の金属表面とを位置調整及び接続するステップであり、処理、位置調整、及び接続の間、最大で300℃、特に最大で260℃、好ましくは230℃、より好ましくは200℃、特に好ましくは最大で180℃、理想的には最大で160℃のプロセス温度が超過されないステップ、
の順序で進行するプロセスフローに本質がある。
Claims (6)
- 第1の基板の第1の金属表面と、第2の基板の第2の金属表面との間に、永久的な導電接続を形成するための方法であって、
前記金属表面の接続の際、少なくとも前記両方の金属表面の金属イオン間及び/又は金属原子間の置換拡散によって生じる永久的な導電接続が形成されるように、前記第1の金属表面と前記第2の金属表面とを表面欠陥の形成によって処理するステップと、
前記第1の金属表面と前記第2の金属表面とを位置調整及び接続するステップとを有していて、前記第1の金属表面と前記第2の金属表面との表面から<3nmの深さの表面に近い層の金属構造の再構成が行われるように温度処理が行われる、前記方法。 - 前記両方の金属表面が塑性的に変形し、それによって前記金属表面間の界面内の空間が閉鎖されるように、前記両方の金属表面が密に接触している間に、前記温度処理が行われる請求項1に記載の方法。
- 前記第1の金属表面と前記第2の金属表面の処理が、気体イオンの注入及び/又は金属ナノ粒子の塗布によって生じた欠陥を有する前記表面に近い層の形成によって行われる請求項1又は2に記載の方法。
- 前記第1の金属表面及び前記第2の金属表面の処理の際、水素の注入が行われる請求項1から3のいずれか1項に記載の方法。
- 前記処理は、少なくとも1つの前記金属表面の表面粗さの平坦化を含む請求項1から4のいずれか1項に記載の方法。
- 前記表面に近い層の金属構造の再構成によって前記表面欠陥が除去される請求項1から5のいずれか1項に記載の方法。
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