SG10201805587TA - Method for permanent connection of two metal surfaces - Google Patents

Method for permanent connection of two metal surfaces

Info

Publication number
SG10201805587TA
SG10201805587TA SG10201805587TA SG10201805587TA SG10201805587TA SG 10201805587T A SG10201805587T A SG 10201805587TA SG 10201805587T A SG10201805587T A SG 10201805587TA SG 10201805587T A SG10201805587T A SG 10201805587TA SG 10201805587T A SG10201805587T A SG 10201805587TA
Authority
SG
Singapore
Prior art keywords
metal surfaces
permanent connection
permanent
connection
metal
Prior art date
Application number
SG10201805587TA
Inventor
Markus Wimplinger
Viorel Dragoi
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG10201805587TA publication Critical patent/SG10201805587TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/03011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/03015—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for aligning the bonding area, e.g. marks, spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/031—Manufacture and pre-treatment of the bonding area preform
    • H01L2224/0311—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/0355—Selective modification
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/038—Post-treatment of the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/038—Post-treatment of the bonding area
    • H01L2224/03848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/8383—Solid-solid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0101—Neon [Ne]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01018—Argon [Ar]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Combinations Of Printed Boards (AREA)
  • User Interface Of Digital Computer (AREA)
  • Conductive Materials (AREA)
SG10201805587TA 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces SG10201805587TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10003568A EP2372755B1 (en) 2010-03-31 2010-03-31 Method for permanently connecting two metal surfaces

Publications (1)

Publication Number Publication Date
SG10201805587TA true SG10201805587TA (en) 2018-08-30

Family

ID=43466688

Family Applications (7)

Application Number Title Priority Date Filing Date
SG10201810251SA SG10201810251SA (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG2013029475A SG189802A1 (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG2012063657A SG183818A1 (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG2013029459A SG190563A1 (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG10201805587TA SG10201805587TA (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG10201911321YA SG10201911321YA (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG10201911341RA SG10201911341RA (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces

Family Applications Before (4)

Application Number Title Priority Date Filing Date
SG10201810251SA SG10201810251SA (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG2013029475A SG189802A1 (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG2012063657A SG183818A1 (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG2013029459A SG190563A1 (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10201911321YA SG10201911321YA (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces
SG10201911341RA SG10201911341RA (en) 2010-03-31 2011-02-23 Method for permanent connection of two metal surfaces

Country Status (8)

Country Link
US (2) US9478518B2 (en)
EP (5) EP2654075B1 (en)
JP (7) JP5802736B2 (en)
KR (1) KR101388715B1 (en)
CN (5) CN105513980A (en)
SG (7) SG10201810251SA (en)
TW (5) TWI590348B (en)
WO (1) WO2011120611A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG186759A1 (en) * 2012-01-23 2013-02-28 Ev Group E Thallner Gmbh Method and device for permanent bonding of wafers, as well as cutting tool
EP3301706A1 (en) 2013-07-05 2018-04-04 EV Group E. Thallner GmbH Method for bonding partially metallic contact surfaces of two substrates using a plurality of stacked sacrificial layers, preferably a solid sacrificial layer and a liquid sacrificial layer
JP5877276B2 (en) 2013-10-07 2016-03-02 古河電気工業株式会社 Bonding structure and electronic member bonding structure
DE102014106231A1 (en) * 2014-05-05 2015-11-05 Ev Group E. Thallner Gmbh Method and device for permanent bonding
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US9633971B2 (en) 2015-07-10 2017-04-25 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
DE112016005373T5 (en) 2015-11-24 2018-08-09 Sumitomo Electric Industries, Ltd. A silicon carbide single crystal substrate, a silicon carbide epitaxial substrate and a method of manufacturing a silicon carbide semiconductor device
TW202414634A (en) 2016-10-27 2024-04-01 美商艾德亞半導體科技有限責任公司 Structures and methods for low temperature bonding
CN108470755B (en) 2017-03-21 2020-07-24 京东方科技集团股份有限公司 Thin film packaging structure, thin film packaging method and display device
CN109545766B (en) * 2018-11-14 2020-08-21 长江存储科技有限责任公司 Three-dimensional memory and manufacturing method thereof
CN110773859A (en) * 2019-11-04 2020-02-11 深圳市汇城精密科技有限公司 Method for welding metal materials
US11495557B2 (en) 2020-03-20 2022-11-08 Advanced Semiconductor Engineering, Inc. Semiconductor device and method of manufacturing the same
CN114080146B (en) * 2021-11-02 2023-12-05 中国电子科技集团公司第三十八研究所 Low-temperature pressureless sensor metal shell sealing method

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4452389A (en) 1982-04-05 1984-06-05 The Bendix Corporation Method for welding with the help of ion implantation
US4706870A (en) 1984-12-18 1987-11-17 Motorola Inc. Controlled chemical reduction of surface film
US4774196A (en) * 1987-08-25 1988-09-27 Siliconix Incorporated Method of bonding semiconductor wafers
US4849247A (en) * 1987-12-14 1989-07-18 Sundstrand Corporation Enhanced adhesion of substrate materials using ion-beam implantation
US5611140A (en) * 1989-12-18 1997-03-18 Epoxy Technology, Inc. Method of forming electrically conductive polymer interconnects on electrical substrates
JPH04111982A (en) 1990-08-29 1992-04-13 Ishikawajima Harima Heavy Ind Co Ltd Diffusion joining method
FR2681472B1 (en) * 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
US5503704A (en) * 1993-01-06 1996-04-02 The Regents Of The University Of California Nitrogen based low temperature direct bonding
WO1994017551A1 (en) * 1993-01-19 1994-08-04 Hughes Aircraft Company Intermediate-temperature diffusion welding
GB2300375B (en) * 1994-08-01 1998-02-25 Nippon Denso Co Bonding method for electric element
JP3215008B2 (en) 1995-04-21 2001-10-02 株式会社日立製作所 Electronic circuit manufacturing method
JP3368140B2 (en) * 1996-03-22 2003-01-20 太陽誘電株式会社 Electronic component mounting method and structure
US6326241B1 (en) * 1997-12-29 2001-12-04 Visteon Global Technologies, Inc. Solderless flip-chip assembly and method and material for same
US6108210A (en) * 1998-04-24 2000-08-22 Amerasia International Technology, Inc. Flip chip devices with flexible conductive adhesive
DE19929278A1 (en) * 1998-06-26 2000-02-17 Nissin Electric Co Ltd Negative hydrogen ion beam injection method on substrate
US6342442B1 (en) * 1998-11-20 2002-01-29 Agere Systems Guardian Corp. Kinetically controlled solder bonding
KR100316029B1 (en) 1998-12-30 2002-01-12 박종섭 Method of fabricating semiconductor device
JP2001298052A (en) * 2000-02-09 2001-10-26 Interuniv Micro Electronica Centrum Vzw Method for flip-chip assembly of semiconductor device using adhesive
JP2001274368A (en) * 2000-03-27 2001-10-05 Shin Etsu Handotai Co Ltd Producing method for semiconductor bonding wafer and semiconductor bonding wafer produced by the same
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
FR2817395B1 (en) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A SUBSTRATE, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED THEREBY
JP4656275B2 (en) * 2001-01-15 2011-03-23 日本電気株式会社 Manufacturing method of semiconductor device
JP2002222832A (en) * 2001-01-29 2002-08-09 Nec Corp Semiconductor device and packaging method of semiconductor element
US6537846B2 (en) * 2001-03-30 2003-03-25 Hewlett-Packard Development Company, L.P. Substrate bonding using a selenidation reaction
US6887769B2 (en) * 2002-02-06 2005-05-03 Intel Corporation Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
DE10208635B4 (en) * 2002-02-28 2010-09-16 Infineon Technologies Ag Diffusion soldering station, composite of two parts connected via a diffusion soldering station and method for producing the diffusion soldering station
US6727587B2 (en) * 2002-04-30 2004-04-27 Infineon Technologies Ag Connection device and method for producing the same
JP4255652B2 (en) * 2002-06-21 2009-04-15 株式会社オクテック Solid bonding method
US6979630B2 (en) * 2002-08-08 2005-12-27 Isonics Corporation Method and apparatus for transferring a thin layer of semiconductor material
CN100337782C (en) * 2002-09-18 2007-09-19 株式会社荏原制作所 Joining material and joining method
FR2845523B1 (en) * 2002-10-07 2005-10-28 METHOD FOR MAKING A SUBSTRATE BY TRANSFERRING A DONOR WAFER HAVING FOREIGN SPECIES, AND ASSOCIATED DONOR WAFER
US6962835B2 (en) 2003-02-07 2005-11-08 Ziptronix, Inc. Method for room temperature metal direct bonding
US6821878B2 (en) * 2003-02-27 2004-11-23 Freescale Semiconductor, Inc. Area-array device assembly with pre-applied underfill layers on printed wiring board
TW584934B (en) * 2003-03-05 2004-04-21 Au Optronics Corp Method of forming a contact and structure thereof
JP4283567B2 (en) * 2003-03-07 2009-06-24 株式会社オクテック Metal thin film bonding method
US7109092B2 (en) * 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US20050003652A1 (en) 2003-07-02 2005-01-06 Shriram Ramanathan Method and apparatus for low temperature copper to copper bonding
US7420083B2 (en) 2003-09-25 2008-09-02 Wyeth Substituted aryloximes
CN100564726C (en) * 2003-10-01 2009-12-02 邱则有 A kind of shuttering member
GB0329460D0 (en) 2003-12-19 2004-01-28 Oxford Instr Plasma Technology Apparatus and method for plasma processing
JP3790995B2 (en) 2004-01-22 2006-06-28 有限会社ボンドテック JOINING METHOD, DEVICE PRODUCED BY THIS METHOD, AND JOINING DEVICE
WO2005104192A2 (en) * 2004-04-21 2005-11-03 California Institute Of Technology A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES
US7442992B2 (en) * 2004-05-19 2008-10-28 Sumco Corporation Bonded SOI substrate, and method for manufacturing the same
US7750487B2 (en) * 2004-08-11 2010-07-06 Intel Corporation Metal-metal bonding of compliant interconnect
US20060270192A1 (en) * 2005-05-24 2006-11-30 International Business Machines Corporation Semiconductor substrate and device with deuterated buried layer
EP1732116B1 (en) * 2005-06-08 2017-02-01 Imec Methods for bonding and micro-electronic devices produced according to such methods
DE602005015103D1 (en) * 2005-07-28 2009-08-06 Infineon Technologies Ag A connection structure for mounting a semiconductor chip on a metal substrate, semiconductor chip, and electronic device having the connection structure, and methods of manufacturing the connection structure
JP4728755B2 (en) 2005-09-22 2011-07-20 ハリマ化成株式会社 Method for forming conductive joint
JP2007090394A (en) * 2005-09-29 2007-04-12 Tokyo Institute Of Technology Method for joining metals
DE102005052563B4 (en) * 2005-11-02 2016-01-14 Infineon Technologies Ag Semiconductor chip, semiconductor device and method of making the same
JP2007149723A (en) * 2005-11-24 2007-06-14 Sumco Corp Process for manufacturing laminated wafer
DE102005058654B4 (en) * 2005-12-07 2015-06-11 Infineon Technologies Ag Method for the surface joining of components of semiconductor devices
EP1798764A1 (en) * 2005-12-14 2007-06-20 STMicroelectronics S.r.l. Process for manufacturing wafers usable in the semiconductor industry
US20070148917A1 (en) * 2005-12-22 2007-06-28 Sumco Corporation Process for Regeneration of a Layer Transferred Wafer and Regenerated Layer Transferred Wafer
JP2007184408A (en) * 2006-01-06 2007-07-19 Nec Corp Electrode bonding method
DE102006017115B4 (en) * 2006-04-10 2008-08-28 Infineon Technologies Ag Semiconductor device with a plastic housing and method for its production
JP5028845B2 (en) * 2006-04-14 2012-09-19 株式会社Ｓｕｍｃｏ Bonded wafer and manufacturing method thereof
US8013342B2 (en) * 2007-11-14 2011-09-06 International Business Machines Corporation Double-sided integrated circuit chips
US7385283B2 (en) * 2006-06-27 2008-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional integrated circuit and method of making the same
US7750488B2 (en) * 2006-07-10 2010-07-06 Tezzaron Semiconductor, Inc. Method for bonding wafers to produce stacked integrated circuits
TWI302372B (en) * 2006-08-30 2008-10-21 Polytronics Technology Corp Heat dissipation substrate for electronic device
JP2008066500A (en) * 2006-09-07 2008-03-21 Sumco Corp Laminated wafer and its manufacturing method
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
JP2008066603A (en) * 2006-09-08 2008-03-21 Toshiba Corp Semiconductor memory device and its manufacturing method
US8241995B2 (en) * 2006-09-18 2012-08-14 International Business Machines Corporation Bonding of substrates including metal-dielectric patterns with metal raised above dielectric
CN101295753B (en) * 2007-04-24 2011-04-20 中国科学院上海微系统与信息技术研究所 Low temperature Au-In-Au bonding method for III-V family compounds
JP2008294098A (en) * 2007-05-23 2008-12-04 Nikon Corp Surface cleaning activation device, and electrode connection device
US20090278233A1 (en) * 2007-07-26 2009-11-12 Pinnington Thomas Henry Bonded intermediate substrate and method of making same
JP4992604B2 (en) * 2007-08-15 2012-08-08 株式会社ニコン Joining apparatus and joining method
DE102007043360A1 (en) * 2007-09-12 2009-03-19 Forschungszentrum Karlsruhe Gmbh Electronic component, process for its production and its use
US7888782B2 (en) * 2007-10-26 2011-02-15 Infineon Technologies Ag Apparatus and method configured to lower thermal stresses
US8211752B2 (en) * 2007-11-26 2012-07-03 Infineon Technologies Ag Device and method including a soldering process
EP2067532A1 (en) * 2007-12-04 2009-06-10 Sony Corporation A method of producing a nanoparticle film on a substrate
EP2067525A1 (en) * 2007-12-04 2009-06-10 Sony Corporation A method of preparing a nanoparticle film having metal ions incorporated
KR100855404B1 (en) * 2007-12-21 2008-08-29 주식회사 동부하이텍 Method for manufacturing an image sensor
JP2008098683A (en) * 2008-01-10 2008-04-24 Ebara Corp Electrode connection method of electrode arrangement base
JP4471002B2 (en) 2008-01-23 2010-06-02 セイコーエプソン株式会社 Method for forming joined body
JP2009177078A (en) * 2008-01-28 2009-08-06 Olympus Corp Mounting structure
US7872357B2 (en) * 2008-03-05 2011-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protection for bonding pads and methods of formation
JP2009260818A (en) 2008-04-18 2009-11-05 Nec Corp Server apparatus, content distribution method, and program
US8304324B2 (en) * 2008-05-16 2012-11-06 Corporation For National Research Initiatives Low-temperature wafer bonding of semiconductors to metals
KR101458213B1 (en) * 2008-07-09 2014-11-04 삼성전자주식회사 Nanostructured film and method of controlling surface properties of the nanostructured film
JP5401661B2 (en) * 2008-08-22 2014-01-29 株式会社ムサシノエンジニアリング Atomic diffusion bonding method and structure bonded by the above method
WO2010031845A1 (en) * 2008-09-18 2010-03-25 Imec Methods and systems for material bonding
US8159060B2 (en) * 2009-10-29 2012-04-17 International Business Machines Corporation Hybrid bonding interface for 3-dimensional chip integration
US8748288B2 (en) 2010-02-05 2014-06-10 International Business Machines Corporation Bonded structure with enhanced adhesion strength
US9048283B2 (en) * 2012-06-05 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding systems and methods for semiconductor wafers
US8916448B2 (en) * 2013-01-09 2014-12-23 International Business Machines Corporation Metal to metal bonding for stacked (3D) integrated circuits
US9953941B2 (en) * 2015-08-25 2018-04-24 Invensas Bonding Technologies, Inc. Conductive barrier direct hybrid bonding
CN112164688B (en) * 2017-07-21 2023-06-13 联华电子股份有限公司 Chip stacking structure and manufacturing method of chip stacking structure

Also Published As

Publication number Publication date
JP2015228516A (en) 2015-12-17
EP2654074A3 (en) 2014-08-27
CN105405779A (en) 2016-03-16
KR20130025368A (en) 2013-03-11
SG190563A1 (en) 2013-06-28
CN105513981A (en) 2016-04-20
TW201612997A (en) 2016-04-01
TW201612999A (en) 2016-04-01
EP2597670A2 (en) 2013-05-29
WO2011120611A1 (en) 2011-10-06
US20220165690A1 (en) 2022-05-26
CN105489513B (en) 2020-10-27
JP2020004999A (en) 2020-01-09
JP6625674B2 (en) 2019-12-25
TWI593034B (en) 2017-07-21
EP2654074B1 (en) 2016-10-26
JP5802736B2 (en) 2015-11-04
CN105489513A (en) 2016-04-13
EP2372755A1 (en) 2011-10-05
TWI587417B (en) 2017-06-11
EP2597671A2 (en) 2013-05-29
EP2654075A2 (en) 2013-10-23
JP2016015508A (en) 2016-01-28
CN102822954B (en) 2016-02-03
TW201613000A (en) 2016-04-01
EP2597670A3 (en) 2013-09-11
CN105405779B (en) 2019-05-14
SG189802A1 (en) 2013-05-31
JP2013524494A (en) 2013-06-17
JP6272807B2 (en) 2018-01-31
EP2597671A3 (en) 2013-09-25
US9478518B2 (en) 2016-10-25
EP2372755B1 (en) 2013-03-20
TWI593033B (en) 2017-07-21
CN102822954A (en) 2012-12-12
JP6272804B2 (en) 2018-01-31
JP6272806B2 (en) 2018-01-31
TW201612998A (en) 2016-04-01
TWI590348B (en) 2017-07-01
CN105513980A (en) 2016-04-20
US11282801B2 (en) 2022-03-22
SG10201911341RA (en) 2020-02-27
EP2597670B1 (en) 2016-03-30
JP2015228517A (en) 2015-12-17
US20160322318A1 (en) 2016-11-03
EP2654075B1 (en) 2016-09-28
KR101388715B1 (en) 2014-04-25
TW201142966A (en) 2011-12-01
US20130040451A1 (en) 2013-02-14
TWI521617B (en) 2016-02-11
SG10201911321YA (en) 2020-02-27
JP2015228518A (en) 2015-12-17
JP2018078325A (en) 2018-05-17
JP6272805B2 (en) 2018-01-31
EP2654074A2 (en) 2013-10-23
EP2654075A3 (en) 2014-08-20
SG10201810251SA (en) 2018-12-28
SG183818A1 (en) 2012-10-30

Similar Documents

Publication Publication Date Title
SG10201911321YA (en) Method for permanent connection of two metal surfaces
PL2529856T3 (en) Metal Part Assembly And Method For Making Same
GB201001833D0 (en) Method
PT2539136T (en) Methods of connecting
ZA201208254B (en) Method of blasting
GB201007353D0 (en) Method
PL2632581T3 (en) Method of making solid beads
GB201007354D0 (en) Method
HK1183864A1 (en) Method for manufacturing of quinoline-3-carboxamides -3-
GB201011513D0 (en) Method
EP2613892A4 (en) Method for treating metal surfaces
GB201008900D0 (en) Method of machining
GB201012148D0 (en) Method
GB201006306D0 (en) Method
EP2673022A4 (en) Fitting and method for assembly
GB201007454D0 (en) Method of determining tolerance
GB201010855D0 (en) Method
GB2497483B (en) Method of metal deposition
GB201117230D0 (en) Connection method
GB201114798D0 (en) Method of modifying surfaces
GB201104302D0 (en) Metal joints
GB201007207D0 (en) Method
GB201119742D0 (en) Method of subsea connection
GB201102475D0 (en) Method of reducing offset
GB201007522D0 (en) Method