JP2008294098A - Surface cleaning activation device, and electrode connection device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface cleaning activation device and an electrode connection device for the surface of an electrode suitable for electrode connection for performing chip lamination at a wafer level. <P>SOLUTION: An electrode connection device includes a surface cleaning activation device for the surface of an electrode, an alignment device for adjusting the positions of the surfaces of the electrodes, an overlaying device for overlaying electrodes with their positions adjusted with each other, and a pressurizer for pressurizing the overlayed electrodes. In the electrode connection device, the surface cleaning activation device includes cleaning members 111, 113, and 114 (cluster ion irradiation devices) for removing a surface pollution layer and a metal evaporation source 120. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a technique for metal bonding, and particularly to a low-temperature bonding technique for bonding metal electrodes at a low temperature.

  A technology for mounting electronic components such as a memory and an MPU at a high density is the most important technology for manufacturing a portable electronic device such as a mobile phone, a notebook computer, and a digital camera. As a technology for this purpose, flip chip mounting technology has been developed, and recently, development for obtaining higher density electronic devices by stacking semiconductor chips using this technology has been actively conducted. Yes. In mounting by this flip chip technique, bumps are formed as bonding electrodes when a semiconductor chip is bonded to a wiring board or when a semiconductor chip is bonded onto a semiconductor chip. In forming the bumps, gold, copper, aluminum or the like is used as an electrode material. However, copper is generally used from the viewpoint of conductivity, resistance to oxidation, and cost.

  As a general method for performing such electrode bonding, a diffusion bonding method using pressure and heating is employed. However, there is no problem when bonding is performed at the chip level. However, when bonding is performed at the wafer level, there is a problem of electrode displacement due to a difference in thermal expansion coefficient between bonded objects. As a method for solving this problem, a room temperature bonding method that does not involve thermal expansion due to heating has been studied. This method uses interatomic bonding force inherent in a substance, and realizes bonding by bringing bonding surfaces into contact with each other. In this case, an important condition is that a surface contamination layer (including a surface oxide layer) does not exist on the joint surface. In order to prevent the contamination layer from being formed on the joint surface, there are the following techniques that have been conventionally considered.

As a first conventional technique, a surface is sputtered with an argon ion beam to remove a contamination layer or an oxide layer on the surface, and a rubbing action is applied between bonding surfaces to improve contact at the atomic level of the surface. There is a method, and the necessity of joining before the surface film is generated again is described, and the cleaning step and the joining step are performed in the same vacuum chamber (see, for example, Patent Document 1). Other techniques that enable bonding at a low temperature include the following. In the second prior art, tin (Sn) is used as a bonding material for bonding copper (Cu) electrodes (see, for example, Patent Document 2). Note that a technique related to planarization of the surface is performed by CMP (chemical mechanical planarization or chemical mechanical polishing). Devices used for these techniques are known (see, for example, Patent Document 3).
Japanese Examined Patent Publication No. 62-22712 JP 2002-110726 A JP 2003-51481 A

  The inventor of the present application examines whether or not the first conventional technique is effective as a technique for bonding semiconductor chips at a wafer level in order to increase the density of semiconductor elements by stacking semiconductor chips and increase the operation speed. did.

  First, a wafer on which a plurality of semiconductor chips are formed is prepared, and the surface of each chip is irradiated with an argon ion beam to activate and clean the surface. After applying ultrasonic vibration in a direction parallel to the overlapping surface, pressurization was performed. The temperature was room temperature (23 ° C.). Next, the bonded wafer stack (two wafers subjected to electrode bonding) was separated into individual chips by a normal dicing method, and a bonding strength test was performed. The test method was a temperature cycle test. As a result of the test, there were few chips having electrodes that were satisfactorily bonded. The bonding of the electrode of the chip was incomplete, and shearing damage was caused by the temperature cycle.

  The present invention has been made in order to solve such problems of conventional room temperature bonding, and an electrode surface surface cleaning activation apparatus and electrode bonding apparatus suitable for electrode bonding for performing chip stacking at a wafer level. The purpose is to provide.

  In order to achieve such an object, the surface cleaning activation device according to the present invention is a surface cleaning activation device for an electrode surface, and includes a cleaning member for removing a surface contamination layer and a metal evaporation source. is doing.

  In the surface cleaning activation apparatus described above, it is preferable that the cleaning member and the metal evaporation source are disposed in one chamber.

  In the surface cleaning activation apparatus described above, it is preferable that the cleaning member is a cluster ion irradiation apparatus.

  In the surface cleaning activation apparatus described above, it is preferable that the metal evaporation source mainly has tin as an evaporation material.

  In the surface cleaning activation apparatus described above, it is preferable to have a mask in front of the electrode surface to be cleaned and activated.

  The electrode bonding apparatus according to the present invention includes an electrode surface cleaning activation device, an alignment device for aligning the electrode surfaces, an overlay device for overlaying the aligned electrodes, and an overlapped electrode. An electrode bonding apparatus configured to include a pressurizing device that pressurizes each other, wherein the surface cleaning activation device is the surface cleaning activation device according to the present invention.

  In the present invention, when the surface contamination layer of the electrodes to be bonded is removed, the surface becomes rough (small irregularities). However, a metal evaporation device in which an appropriate metal is attached to the evaporation source is used, and at the same time as the surface activation device. When metal deposition is performed, surface roughness is reduced, and a metal thin film in which an electrode material and a compound are formed at the interface on the electrode surface is obtained. By joining the surface metals obtained by heating, a stronger joining can be obtained at a lower temperature than joining the electrodes themselves.

  As a result of repeating the joining experiment in order to solve the above-mentioned problems of the prior art, the inventor of the present application has found the problem of the conventional method, and has reached the present invention. Hereinafter, physical phenomena related to the bonding found by the present inventor, which is the basis of the present invention, will be described.

  In the cleaning activation process, the surface contamination layer (oxide layer) is removed from the surface by irradiation with an argon ion beam. However, since the removal of the surface contamination layer (oxide layer) is basically performed by sputtering, the electrode surface after the surface contamination layer (oxide layer) is removed is very small. From the viewpoint of flatness required for room temperature bonding, irregularities that cannot be ignored are formed. When the unevenness is vibrated so as to slide against each other by applying a predetermined pressure to the contact surface, the unevenness is reduced to a shape like a polishing effect. However, it has been difficult and unrealistic to bring the polishing effect by vibration between the contact surfaces while keeping the applied pressure at a predetermined value over the entire wafer surface. If the applied pressure at the contact surface is too large, the semiconductor wafer may be damaged centering on the electrode portion, and this phenomenon is particularly noticeable when thinned semiconductor wafers are stacked.

  Further, as in the second prior art, there is a technique of applying tin to the electrode surface by a predetermined thickness as an electrode bonding material and lowering the temperature required for bonding, but it is attached to the electrode by plating, It is a technology that requires a complicated process and requires time. In addition, it is necessary to perform the plating process while maintaining a state in which oxidation of the surface flattened by CMP can be prevented, which often causes problems in process management.

  The inventor of the present application has found that the minute unevenness as described above is the cause of insufficient bonding strength of the electrode bonding, and as a result of studying a method for avoiding the plating process, has come up with the present invention.

  A first embodiment of the surface cleaning activation device of the present invention will be described with reference to FIG. The surface cleaning activation device of FIG. 1 has a cleaning member and a metal evaporation source. A cluster ion beam irradiation apparatus will be described as an example of the cleaning member. The cluster ion beam irradiation apparatus has a function of generating cluster ion beam particles based on the supplied gas. The gas is introduced from the gas introduction pipe 111. Any gas may be used as long as it is an inert gas, but argon (Ar) is generally used from the viewpoints of particle size when ionized, ease of handling, cost, and the like. The gas is clustered as it passes through the clustering member 112, and the clustered particles 113 pass through the ionization member 114 and are ionized. The ionized cluster is accelerated by the accelerating electric field formed by the cathode 115 having a negative potential, and is irradiated onto the wafer 101 on which a large number of semiconductor chips to be bonded, which are held by the holder 117, are formed. Several ionization electrodes are arranged on the ionization member 114, and a voltage and current of about 100 to 300 V and about 100 to 400 mA are applied between the electrodes. The ionization member 114 is provided with an extraction electrode, and a potential of about 20 KV is applied to the cathode 115. As such a cluster ion beam irradiation apparatus, for example, GCIB-25 manufactured by ULVAC, Inc. can be used.

  Next, the metal evaporation source, which is another component of the present invention, will be described. The metal evaporation source 120 has a holding container 131 (described in FIG. 1) formed by processing tungsten or tantalum into a boat shape. A metal (in the form of particles or lumps) to be deposited on the electrode is placed in the boat-shaped container 131, and resistance heating is performed by flowing current from both ends of the container. In order to control the thickness of the metal layer to be deposited, a film thickness meter using a crystal resonator may be provided (not shown). The thickness of the metal layer when the metal is deposited using the metal evaporation source 120 will be described. The metal layer has a metal island structure in the initial stage (a metal having a lower melting point is more likely to have an island shape), but when the average thickness exceeds 5 nm, a continuous film is formed. If the metal layer becomes thick enough to form a continuous film, it may cause a phenomenon of electrical shorting between the electrodes. Since the backfill effect works well within this film thickness, if the film thickness is controlled using a film thickness meter, the surface irregularities and roughness that occur in the cleaning process can be achieved without revealing the short-circuit phenomenon between the electrodes. Can be reduced, and electrode joining can be performed stably.

  In FIG. 1, the cluster ion beam irradiation apparatus and the metal evaporation source are arranged. In FIG. 1, the cluster ion beam irradiation apparatus and the metal evaporation source are arranged in the same chamber 161, and vacuum devices 151, 153 and The example which employ | adopted the differential exhaustion mechanism which uses the partition 171 (it is three in the figure) which has opening as a main component is shown. This prevents the residual gas from adversely affecting the electrode surfaces to be joined or adversely affects the metal layer deposition process when the environment in which the cluster ion beam irradiation apparatus is operating is not high vacuum. This is to avoid this. For example, even if the gas used is an inert gas, if the metal is evaporated in an environment where the degree of vacuum is reduced and the mean free path is shortened, the evaporated metal molecules are scattered and reach the electrode surface. The rate decreases. When the operating environment of the cleaning member and the usage environment of the metal evaporation source are greatly different, the cluster ion beam is removed while removing the influence of residual gas by attaching an additional member (partition 171) as shown in FIG. The surface cleaning by the electrode and the deposition of the electrode joining auxiliary metal can be performed simultaneously. Note that a vacuum device 155 for making the inside of the chamber 161 a vacuum atmosphere is attached to the chamber 161.

  FIG. 2 shows a second embodiment of the surface cleaning activation device of the present invention. 2 differs from FIG. 1 in that the holder 117 has a degree of freedom of rotation. When irradiating a cluster ion beam, it may be necessary to adjust the irradiation angle. The irradiation angle is adjusted according to the contamination state of the surface, the species of the oxide layer on the surface and the thickness of the oxide layer. If the cluster ion beam irradiation process and the metal layer deposition process are not performed simultaneously, the irradiation condition and the metal deposition condition can be set independently by using the functional configuration shown in FIG. There is an advantage that more effective processing can be performed.

  Next, a mask 711 used in metal deposition in the surface cleaning activation apparatus of FIG. 2 will be described with reference to FIG. FIG. 7A shows the positional relationship between the metal evaporation source 120, the wafer 701 having an electrode to be cleaned, and the mask 711 of the present invention. The mask 711 is aligned by a mechanism (not shown) in the chamber 161 of FIG. 2 so that the positional relationship between the wafer 701 to be cleaned and the mask 711 is such a positional relationship. The mask 711 is made of a low thermal expansion ceramic plate, and an opening is provided in a necessary portion. FIG. 7B shows an example of the opening of the mask 712. An opening 721 whose size is adjusted according to the position and arrangement of the electrodes is arranged at an appropriate position. FIG. 7C shows an example of another mask opening. In this mask 713, openings corresponding to individual electrodes are not formed in the mask 713, but mesh-shaped openings 731 are formed in the electrode arrangement region. The mesh-shaped opening 731 is formed by weaving a heat-resistant polymer fiber using warp and weft. The polymer material is polyester (for example, PET), the diameter of the fiber is several μm, and the distance between the fibers is several tens of μm. The fiber spacing is determined by the electrode spacing. In the case of a mesh-like opening, the metal blocking part 741 may not be held by the mesh depending on the arrangement of the opening. At this time, the auxiliary beam 733 is used to maintain the strength of the mask 713.

  Next, the usage method and effects of the mask will be described. In the initial stage of the cleaning activation process, metal is deposited without using a mask as shown in FIGS. The average thickness to be deposited in this initial stage is 1 nm to 5 nm, and when the metal layer having this thickness is formed, the processing by the cleaning member is stopped. As described above, the unevenness and roughness caused by the cleaning member due to the backfilling effect of the metal layer are alleviated at this stage, and at the same time, the metal deposited by ion particles and the electrode metal form an alloy. ing.

  By the way, the flatness of the wafer itself becomes a problem in order for the electrode bonding to be uniformly bonded at each electrode on the wafer. In the case where the flatness of the wafer surface is not sufficient, when a metal layer is deposited using a mask, electrode bonding having practical strength can be achieved for all the electrodes on the wafer. However, if the flatness is not sufficient, the joining condition may not be satisfied only by the backfilling effect. In this case, it is possible to employ a method of joining at a temperature much lower than the joining temperature of the electrode and the electrode by utilizing the fact that the metal and the electrode form an alloy.

  A mask 711 of the present application is set on the front surface of the electrode on which the metal is deposited by several nm on the electrode, as shown in FIG. 7A, and the metal layer is deposited thicker. When the thickness reaches several μm, the deposition is stopped. In this way, a film of metal (for example, low melting point tin) of several μm is formed only on the electrode portion, and a film in which the film and the electrode form a compound is obtained. When the mask 712 having the opening 721 shown in FIG. 7B is used, the metal layer 793 is formed only on the electrode 791 as shown in FIG. 7D. On the other hand, the electrode arrangement and the metal layer formation state when using the mask having the opening shown in FIG. 7C is a mesh-shaped opening, and the deposited metal layer is a square. The pattern is arranged with the mesh yarns as the period. FIG. 7E explains this pattern. With respect to the electrode 791 on the wafer 701, the deposited metal layer becomes as 795 797. If the size and spacing of the mesh openings are adjusted according to the size of the electrodes and the spacing between the electrodes, a metal layer is formed on the electrode and on the wafer surface without the electrodes, but the electrodes are short-circuited by the metal layer. Will disappear. The thickness of the metal layer is set to several μm, the electrodes are overlapped, heat is applied to melt the metal, and an appropriate pressure is applied. Then, even when there is a problem in the flatness of the wafer itself, the local thickness change is absorbed by the melting of the metal, and uniform electrode bonding is obtained.

  Next, the electrode bonding apparatus of the present invention will be described with reference to FIGS. FIG. 3 is a diagram showing a device configuration of the electrode bonding apparatus according to the present invention. The electrode bonding apparatus according to the present invention includes a surface cleaning activation device 302, an alignment device / superposition device 303, and a pressure device 304. Further, conveying devices 315 and 325 are disposed between the surface cleaning activation device 302 and the alignment device / superimposing device 303 and between the alignment device / superimposing device 303 and the pressurizing device 304. These apparatuses and transfer apparatuses are installed in a chamber (processing chamber) designed to maintain a processing atmosphere necessary for a processing method in each process. Therefore, when the processing atmosphere is different, the chambers may be separated according to the processing atmosphere, and a delivery chamber having a load lock mechanism (not shown) may be installed between the chambers in order to deliver the workpieces between the chambers without any problem. (It will be described later using FIG. 4).

  Examples of the device configuration will be described below. Regarding the surface cleaning activation apparatus, the apparatus described with reference to FIG. 1 or 2 can be used. That is, the apparatus includes a member that is clustered and ionized by supplying an inert gas, a member that accelerates the ionized cluster, and a metal evaporation member that performs metal deposition.

  The alignment device / superposition device will be described with reference to FIG. The alignment apparatus includes a two-field microscope 417 and an XY stage 409 and a tilt stage 407 installed on a base 413. Other related apparatuses will be described based on the wafer transfer procedure. The wafer whose surface has been flattened and the cleaning activation process has been completed is set on a transfer table 427 through a gate valve 423 opened by a transfer device 315 (see FIG. 3). When the wafer is delivered, the wafer is delivered via lift pins 425 provided on the transfer table 427. When the wafer is set on the transfer table 427, the gate valve 423 is closed, and the vacuum device 431 starts operating to make the inside of the chamber a vacuum atmosphere. When the predetermined degree of vacuum is reached, the gate valve 421 is opened, and the wafer 401 is transferred from the transfer table 427 to the lower holding plate 406 by the transfer device 455. (This wafer is denoted as 403). Next, through the same operation, the other wafer 401 having the electrodes to be bonded is held on the upper holding plate 405. The upper and lower holding plates are provided with an electrostatic chucking mechanism that electrostatically chucks the wafer. When the wafers having electrodes to be bonded are respectively held by the holding plates, a two-field microscope 417 is inserted between the adjacent wafers 401 and 403 to obtain alignment information between the wafers. When the alignment information is obtained, the XY stage 409 and the tilt stage 407 are driven to perform alignment. When the alignment is completed, the overlapping member is operated. The overlapping device includes upper and lower holding plates 405 and 406, an upper fixed beam 415, and a Z stage (height direction) 441. Based on the alignment information, the Z stage 441 operates and the two wafers are superimposed. At the time of superposition, a resin for temporarily fixing is applied, so that it can be conveyed to the pressurizing step which is the next step. The atmosphere in which the alignment device / superposition device is placed is a vacuum atmosphere or an inert gas atmosphere in order to prevent reoxidation of the electrode surface. Accordingly, the vacuum device 433 is attached to the chamber, and an inert gas supply path (not shown) and a control valve are attached.

  The pressurizing apparatus will be described with reference to FIG. The apparatus includes a lower pressure plate 502 arranged on a base 507, an upper beam 513 fixed to the frame 511, a pressure mechanism 509 supported by the beam, and an upper pressure plate 501. If necessary, heating members 505 and 503 for heating the wafer during pressing are attached to the surface of the pressing plate. The temporarily laminated wafer stack 521 is transferred onto the lower pressure plate 502 or the heating device 505 by the transfer device 325 (see FIG. 3), and the parallelism between the pressure plates 501 and 502 is adjusted. The upper pressure plate 501 is pressed down by the pressure mechanism 509 to pressurize the temporarily laminated wafer stack. Since the installation atmosphere of the pressurizing apparatus is a vacuum or an inert gas atmosphere, a vacuum apparatus 515 is attached to the chamber. Of course, it is also possible to install an inert gas introduction pipe and a flow rate control valve instead of the vacuum device. In order to easily achieve a high degree of vacuum, it is effective to attach the baking device 531. This baking apparatus heats the chamber and the apparatus placed therein, and promotes the release of water molecules adsorbed on the surface by heating. As a heating method, there are a method of energizing a nichrome wire, an infrared lamp irradiation method, and the like.

  In the above description of the apparatus, the apparatus is compatible with the cleaning activation, the alignment / superposition, and the pressurizing process in any atmosphere. However, for example, when the cleaning activation, alignment / superposition, and pressurization steps are performed in the same atmosphere, for example, in a vacuum state or an inert gas atmosphere, each member may be arranged in one chamber as an apparatus configuration. Is possible. FIG. 6 shows an example of this arrangement. The wafer whose surface has been flattened by the flattening device 611 (for example, CMP) is transferred to the surface cleaning activation device 613 by the transfer device 601 through the load lock chamber 603. When the processing is completed, the transfer device 601 sequentially transfers the data to the alignment device / superposition device 615 and the pressure device 617. By adopting such an arrangement, the overall configuration of the apparatus such as the transport system and the load lock system is simplified, and the apparatus cost and the installation area can be reduced.

  Needless to say, in the above-described embodiment, the alignment apparatus and the overlay apparatus are provided with two functions in the same apparatus, but the alignment function and the overlay function may be provided in separate apparatuses.

  As described above, by using the surface cleaning activation apparatus according to the present invention, the surface contamination layer is removed by the cleaning member, and then the wafer to be bonded is exposed to metal without exposing the cleaned and activated electrode surface to an oxidizing atmosphere. It becomes possible to move to an evaporation process, and it becomes possible to deposit a metal in a state where no contamination layer (oxide layer) is formed on the electrode surface. By using a metal with a low melting point as the metal to be evaporated, the unevenness and roughness of the surface generated in the removal process of the contaminated layer (oxide layer) is reduced, and metal diffusion occurs between the electrode metals, thereby realizing metal-to-metal bonding by diffusion bonding. Is done.

  Furthermore, when a metal layer is formed on the electrode surface by vapor-depositing metal on the bonding surface while cleaning the surface with an ion beam, the vapor-deposited metal layer is irradiated with the ion beam, and the metal of the electrode is formed by a knock-on effect. An alloy is easily formed at the interface. Therefore, when joining the electrodes, the deposited metal layer and the electrode form an alloy, so that the electrodes are strongly joined only by joining the metal deposition films on the electrodes to be joined. Become. On the other hand, in the conventional method, since heating is used for bonding between the electrode and the metal bonding material, a temperature higher than the bonding temperature between the bonding materials is required. If the apparatus of the present invention is used, bonding at a lower temperature becomes possible.

  Moreover, the cleaning member of the contaminated layer (oxide layer) in the surface cleaning activation apparatus according to the present invention is a cluster ion beam irradiation apparatus. Irradiation with an ion beam at the atomic level causes roughness on the surface with irregularities (roughness) on the surface with a fine period and large amplitude. On the other hand, when the cluster ion particles having a large irradiation particle size are irradiated, the period of surface irregularities (roughness) becomes longer and the amplitude becomes smaller. It has a sufficient effect for removing the contamination layer (oxide layer) while leaving such a preferable surface state.

  Moreover, the evaporation material which has tin as a metal is used for the metal evaporation source. Because of its low melting point, it has the effect of refilling the surface roughness caused by the surface contamination layer (oxidation layer) removal process, thereby reducing the degree of surface roughness caused by the surface contamination layer (oxide layer) removal process. In addition, good metal diffusion occurs even at low temperatures, and metal-to-metal bonding is realized by diffusion bonding.

  Moreover, the mask is arrange | positioned at the surface cleaning activation apparatus. By disposing a mask in front of the electrode surface to be cleaned and activated, it is possible to deposit a metal layer only on a necessary portion. In addition, the metal layer is not limited to a necessary portion, but the metal layer may avoid a short circuit between electrodes, and an appropriate mask can be selected.

  Increasing the density and operating speed of elements in a semiconductor chip are always required for semiconductor chips. The present invention is an inevitable technique for increasing the density and operating speed of semiconductor chips, and industrial use is therefore an inevitable technique.

It is a block diagram which shows the surface cleaning activation apparatus of 1st Embodiment, and shows the cleaning member and the metal evaporation source. It is a block diagram which shows the surface cleaning activation apparatus of 2nd Embodiment. It is a block diagram of an electrode bonding apparatus. It is a block diagram of an alignment apparatus and a superposition apparatus. It is a block diagram of a pressurization apparatus. It is a block diagram which shows the modification of an electrode joining apparatus. It is a schematic diagram which shows the example of the pattern of the mask used for a surface cleaning activation apparatus, and the metal layer vapor-deposited using the said mask.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Wafer in which the electrode which should be joined is formed 111 Gas introduction pipe 112 Clustering member 113 Clustered particle 114 Ionization member 115 Cathode 117 Holder 120 Metal evaporation source 131 Holding container 161 Chamber 302 Surface cleaning activation apparatus 303 Alignment apparatus Overlaying device 304 Pressurizing device 401, 403 Wafer 405 on which electrodes to be joined are formed Upper holding plate (overlapping device) 406 Lower holding plate 415 Upper fixed beam 441 Z stage 417 Two-field microscope (alignment device)
407 Tilt stage 409 XY stage 509 Pressurization mechanism 521 Wafer stack 613 Surface cleaning activation device 615 Alignment device / superposition device 617 Pressurization device 701 Wafer 711, 712, 713 Mask 791 Electrode

Claims (6)

An apparatus for activating the surface of an electrode surface,
A cleaning member for removing the surface contamination layer;
A surface cleaning activation device comprising a metal evaporation source.   The surface cleaning activation apparatus according to claim 1, wherein the cleaning member and the metal evaporation source are disposed in one chamber.   The surface cleaning activation apparatus according to claim 1, wherein the cleaning member is a cluster ion irradiation apparatus.   The surface cleaning activation apparatus according to any one of claims 1 to 3, wherein the metal evaporation source mainly includes tin as an evaporation material.   5. The surface cleaning activation apparatus according to claim 1, further comprising a mask on a front surface of the electrode surface to be cleaned and activated. A surface cleaning activation device for electrode surfaces, an alignment device for aligning the electrode surfaces, an overlay device for overlaying the aligned electrodes, and a pressurizing device for pressurizing the superimposed electrodes An electrode joining device configured as follows:
The said surface cleaning activation apparatus is a surface cleaning activation apparatus as described in any one of Claims 1-5, The electrode joining apparatus characterized by the above-mentioned.

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