JP6255210B2 - レジスト下層膜形成組成物 - Google Patents

レジスト下層膜形成組成物 Download PDF

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Publication number
JP6255210B2
JP6255210B2 JP2013221111A JP2013221111A JP6255210B2 JP 6255210 B2 JP6255210 B2 JP 6255210B2 JP 2013221111 A JP2013221111 A JP 2013221111A JP 2013221111 A JP2013221111 A JP 2013221111A JP 6255210 B2 JP6255210 B2 JP 6255210B2
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skeleton
group
carbon atoms
parts
composition
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JP2013221111A
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English (en)
Japanese (ja)
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JP2015081248A (ja
JP2015081248A5 (enExample
Inventor
杉 茂 正 中
杉 茂 正 中
木 理 人 鈴
木 理 人 鈴
晋 李
晋 李
角 元 希 三
角 元 希 三
手 泰 明 井
手 泰 明 井
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AZ Electronic Materials Luxembourg SARL
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AZ Electronic Materials Luxembourg SARL
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Priority to JP2013221111A priority Critical patent/JP6255210B2/ja
Priority to US14/514,728 priority patent/US9328198B2/en
Priority to TW103136567A priority patent/TWI626257B/zh
Priority to KR1020140144138A priority patent/KR101906788B1/ko
Publication of JP2015081248A publication Critical patent/JP2015081248A/ja
Publication of JP2015081248A5 publication Critical patent/JP2015081248A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/44—Polyester-amides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D177/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino carboxylic acids or of polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/08—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from amino-carboxylic acids
    • C08G69/12—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from amino-carboxylic acids with both amino and carboxylic groups aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/48—Polymers modified by chemical after-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2013221111A 2013-10-24 2013-10-24 レジスト下層膜形成組成物 Active JP6255210B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013221111A JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物
US14/514,728 US9328198B2 (en) 2013-10-24 2014-10-15 Composition for forming resist underlayer
TW103136567A TWI626257B (zh) 2013-10-24 2014-10-23 Forming a composition of the photoresist underlayer film
KR1020140144138A KR101906788B1 (ko) 2013-10-24 2014-10-23 레지스트 하층막 형성 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013221111A JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物

Publications (3)

Publication Number Publication Date
JP2015081248A JP2015081248A (ja) 2015-04-27
JP2015081248A5 JP2015081248A5 (enExample) 2016-06-30
JP6255210B2 true JP6255210B2 (ja) 2017-12-27

Family

ID=52995833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013221111A Active JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物

Country Status (4)

Country Link
US (1) US9328198B2 (enExample)
JP (1) JP6255210B2 (enExample)
KR (1) KR101906788B1 (enExample)
TW (1) TWI626257B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
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US20190064663A1 (en) * 2016-03-31 2019-02-28 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
JP7207330B2 (ja) * 2018-01-23 2023-01-18 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法
DE102019001137B3 (de) 2019-02-15 2020-08-06 Karlsruher Institut für Technologie Gemusterte, dendrimere Substratoberflächen sowie deren Herstellung und Verwendung
CN114503032B (zh) * 2019-10-09 2025-11-11 日产化学株式会社 抗蚀剂下层膜形成用组合物
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
CN113087896B (zh) * 2021-04-12 2023-10-13 东莞市华盈新材料有限公司 一种耐高温pa6t及其合成方法
JPWO2023032998A1 (enExample) * 2021-08-31 2023-03-09
JP2025130217A (ja) * 2024-02-27 2025-09-08 信越化学工業株式会社 有機膜形成用組成物、有機膜形成方法及びパターン形成方法

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Also Published As

Publication number Publication date
KR20150047437A (ko) 2015-05-04
TWI626257B (zh) 2018-06-11
KR101906788B1 (ko) 2018-10-11
US20150118624A1 (en) 2015-04-30
US9328198B2 (en) 2016-05-03
TW201527353A (zh) 2015-07-16
JP2015081248A (ja) 2015-04-27

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