JP2015081248A5 - - Google Patents

Download PDF

Info

Publication number
JP2015081248A5
JP2015081248A5 JP2013221111A JP2013221111A JP2015081248A5 JP 2015081248 A5 JP2015081248 A5 JP 2015081248A5 JP 2013221111 A JP2013221111 A JP 2013221111A JP 2013221111 A JP2013221111 A JP 2013221111A JP 2015081248 A5 JP2015081248 A5 JP 2015081248A5
Authority
JP
Japan
Prior art keywords
skeleton
group
carbon atoms
different
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013221111A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015081248A (ja
JP6255210B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013221111A priority Critical patent/JP6255210B2/ja
Priority claimed from JP2013221111A external-priority patent/JP6255210B2/ja
Priority to US14/514,728 priority patent/US9328198B2/en
Priority to TW103136567A priority patent/TWI626257B/zh
Priority to KR1020140144138A priority patent/KR101906788B1/ko
Publication of JP2015081248A publication Critical patent/JP2015081248A/ja
Publication of JP2015081248A5 publication Critical patent/JP2015081248A5/ja
Application granted granted Critical
Publication of JP6255210B2 publication Critical patent/JP6255210B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013221111A 2013-10-24 2013-10-24 レジスト下層膜形成組成物 Active JP6255210B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013221111A JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物
US14/514,728 US9328198B2 (en) 2013-10-24 2014-10-15 Composition for forming resist underlayer
TW103136567A TWI626257B (zh) 2013-10-24 2014-10-23 Forming a composition of the photoresist underlayer film
KR1020140144138A KR101906788B1 (ko) 2013-10-24 2014-10-23 레지스트 하층막 형성 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013221111A JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物

Publications (3)

Publication Number Publication Date
JP2015081248A JP2015081248A (ja) 2015-04-27
JP2015081248A5 true JP2015081248A5 (enExample) 2016-06-30
JP6255210B2 JP6255210B2 (ja) 2017-12-27

Family

ID=52995833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013221111A Active JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物

Country Status (4)

Country Link
US (1) US9328198B2 (enExample)
JP (1) JP6255210B2 (enExample)
KR (1) KR101906788B1 (enExample)
TW (1) TWI626257B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017170134A1 (ja) * 2016-03-31 2017-10-05 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR102697981B1 (ko) * 2018-01-23 2024-08-23 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법 그리고 패터닝된 기판의 제조 방법
DE102019001137B3 (de) 2019-02-15 2020-08-06 Karlsruher Institut für Technologie Gemusterte, dendrimere Substratoberflächen sowie deren Herstellung und Verwendung
JP7655223B2 (ja) * 2019-10-09 2025-04-02 日産化学株式会社 レジスト下層膜形成組成物
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
CN113087896B (zh) * 2021-04-12 2023-10-13 东莞市华盈新材料有限公司 一种耐高温pa6t及其合成方法
CN117882009A (zh) * 2021-08-31 2024-04-12 三菱瓦斯化学株式会社 旋涂碳膜形成用组合物、旋涂碳膜形成用组合物的制造方法、光刻用下层膜、抗蚀图案形成方法、及电路图案形成方法
JP2025130217A (ja) * 2024-02-27 2025-09-08 信越化学工業株式会社 有機膜形成用組成物、有機膜形成方法及びパターン形成方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791643A (fr) * 1971-11-26 1973-03-16 Sterwin Ag Procede de preparation de nouveaux derives d'anthracene
US4123455A (en) * 1977-06-13 1978-10-31 American Cyanamid Company Phenenyltris(carbonylimino) multi-anionic substituted triphenyl acids and salts
US4118585A (en) * 1977-07-01 1978-10-03 American Cyanamid Company Anionic benzene tetrakis carbonylimino isophthalic acid salts
ATE156158T1 (de) * 1992-04-14 1997-08-15 Cornell Res Foundation Inc Makromoleküle auf basis von dendritischen polymeren und verfahren zur herstellung
AU1689495A (en) * 1994-01-27 1995-08-15 Trustees Of Columbia University In The City Of New York, The Enantioselective receptors for amino acid derivatives, and other compounds
JP3525152B2 (ja) * 1996-09-30 2004-05-10 独立行政法人 科学技術振興機構 エポキシ樹脂硬化性組成物
US5917020A (en) * 1997-01-15 1999-06-29 Kluger; Ronald H. Bis-tetrameric hemoglobin and reagents for its production
JPH1160540A (ja) * 1997-08-18 1999-03-02 Nippon Steel Chem Co Ltd 芳香族エステル(メタ)アクリレートデンドリマー及び硬化性樹脂組成物
JPH1160973A (ja) * 1997-08-21 1999-03-05 Teijin Ltd 分岐状ポリマーを含有する光学用樹脂組成物
AU8889101A (en) * 2000-09-07 2002-03-22 Telik Inc Benzene tricarboxylic acid derivatives as insulin receptor activators
JP2002328466A (ja) * 2001-05-02 2002-11-15 Jsr Corp ポジ型感放射線性組成物
JP2003238495A (ja) * 2002-02-21 2003-08-27 Sangaku Renkei Kiko Kyushu:Kk 化学発光性ポリフェノールデンドリマー
JP4016414B2 (ja) * 2002-02-21 2007-12-05 日本曹達株式会社 新規デンドリマー及びその製造方法
JP4121309B2 (ja) * 2002-05-31 2008-07-23 富士フイルム株式会社 ネガ型レジスト組成物
JP2004323562A (ja) * 2003-04-22 2004-11-18 Jsr Corp デンドリマーの製造法
DE112004001675T5 (de) * 2003-09-12 2006-07-06 Sumitomo Chemical Co., Ltd. Dendrimerverbindung und diese verwendendes organisches lumineszierendes Element
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7754818B2 (en) * 2005-01-11 2010-07-13 Brewer Science Inc. Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers
MY145424A (en) * 2005-02-07 2012-02-15 Ciba Holding Inc Functionalized esters, amides or urethanes of perfluorinated alcohols or amines as surface modifiers
US8436103B2 (en) * 2005-09-07 2013-05-07 Nippon Soda Co., Ltd. Star polymer and method of producing the same
JP2007211207A (ja) * 2006-02-13 2007-08-23 Dainippon Ink & Chem Inc 星型高分子化合物及びその製造方法
EP2039710B1 (en) * 2006-07-11 2013-01-02 Nippon Soda Co., Ltd. Star polymer and method for producing the same
US20080020043A1 (en) * 2006-07-20 2008-01-24 Marc Gingras Dendrimer-Drug Conjugates
WO2008017122A1 (en) * 2006-08-11 2008-02-14 Starpharma Pty Ltd Polylysine dendrimer contrast agent
TWI331611B (en) * 2006-11-23 2010-10-11 Ind Tech Res Inst Mononuclear star-branched polymer dielectric material and organic thin film transistor
JP2008231174A (ja) * 2007-03-19 2008-10-02 Fujifilm Corp 膜形成用組成物、絶縁膜及び電子デバイス
EP2109005A1 (en) * 2008-04-07 2009-10-14 Stichting Dutch Polymer Institute Process for preparing a polymeric relief structure
TWI416262B (zh) * 2009-03-13 2013-11-21 Jsr Corp A silicon film-forming composition, a silicon-containing film, and a pattern-forming method
DE102009027982A1 (de) * 2009-07-24 2011-01-27 Robert Bosch Gmbh Sternpolymer
KR20120101534A (ko) 2009-12-14 2012-09-13 닛산 가가쿠 고교 가부시키 가이샤 레지스트 하층막 형성 조성물
JP5737526B2 (ja) 2010-08-02 2015-06-17 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
EP2791232A1 (en) * 2011-12-16 2014-10-22 Ticona LLC Nucleating system for polyarylene sulfide compositions
JP5927910B2 (ja) * 2011-12-28 2016-06-01 コニカミノルタ株式会社 位相差フィルム、その製造方法、偏光板及び液晶表示装置
JP5910199B2 (ja) * 2012-03-14 2016-04-27 凸版印刷株式会社 二次電池用正極活物質及びそれを用いた二次電池

Similar Documents

Publication Publication Date Title
JP5818710B2 (ja) パターン形成方法
TWI667533B (zh) Chemically amplified positive photosensitive resin composition, method for producing substrate with template, and method for producing deposited body
TWI592757B (zh) 鍍敷造形物的形成方法
JP5308454B2 (ja) パーアクセプター置換芳香族アニオンに基づくduv、muv及び光リソグラフィ用イオン性有機光酸発生剤
JP5898985B2 (ja) レジストパターン形成方法
TWI633123B (zh) 高分子化合物、負型光阻組成物、疊層體、圖案形成方法及化合物
JP2004531749A5 (enExample)
JP6255210B2 (ja) レジスト下層膜形成組成物
TW200827935A (en) Pattern formation method
TW201923467A (zh) 抗蝕劑底層膜形成用組成物、抗蝕劑底層膜及其形成方法、圖案化基板的製造方法及化合物
TW200821749A (en) Photoacid generators, chemically amplified resist compositions, and patterning process
CN106168737B (zh) 化学增幅光阻材料、共聚物及微影方法
TWI630461B (zh) Chemical amplification type photosensitive resin composition and method for producing resist pattern using the same
TW202014409A (zh) 化學增幅型正型感光性樹脂組成物、感光性乾膜、感光性乾膜之製造方法、圖型化之阻劑膜之製造方法、附鑄模之基板的製造方法、鍍敷造形物之製造方法及含氮芳香族雜環化合物
JPWO2022054853A5 (enExample)
JP5871577B2 (ja) レジストパターン形成方法
TW201642024A (zh) 微透鏡圖型製造用之正型感光性樹脂組成物
TWI701506B (zh) 光阻圖型形成方法及光阻組成物
CN113219786A (zh) 光刻方法和制造半导体器件的方法
JP2014062990A (ja) パターン形成方法
JP2010191409A (ja) 酸転写用組成物、酸転写用膜及びパターン形成方法
US7998658B2 (en) Pattern forming method
TW202615568A (zh) 化學放大型正型感光性組合物、感光性乾膜、感光性乾膜之製造方法、經圖案化之阻劑膜之製造方法、附鑄模之基板之製造方法、及鍍敷造形物之製造方法
TW202526503A (zh) 光阻組成物和圖案形成方法
TW202615506A (zh) 化學放大型正型感光性組合物、感光性乾膜、感光性乾膜之製造方法、經圖案化之阻劑膜之製造方法、及鍍敷造形物之製造方法