JP2015081248A5 - - Google Patents
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- JP2015081248A5 JP2015081248A5 JP2013221111A JP2013221111A JP2015081248A5 JP 2015081248 A5 JP2015081248 A5 JP 2015081248A5 JP 2013221111 A JP2013221111 A JP 2013221111A JP 2013221111 A JP2013221111 A JP 2013221111A JP 2015081248 A5 JP2015081248 A5 JP 2015081248A5
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- JP
- Japan
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- 150000002430 hydrocarbons Chemical group 0.000 claims description 21
- 125000004432 carbon atom Chemical group C* 0.000 claims description 20
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 15
- 125000001624 naphthyl group Chemical group 0.000 claims description 14
- 125000005577 anthracene group Chemical group 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000000412 dendrimer Substances 0.000 claims description 8
- 229920000736 dendritic polymer Polymers 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical group C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000011593 sulfur Substances 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 239000003431 cross linking reagent Substances 0.000 claims 1
- 238000010304 firing Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- 230000007261 regionalization Effects 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013221111A JP6255210B2 (ja) | 2013-10-24 | 2013-10-24 | レジスト下層膜形成組成物 |
| US14/514,728 US9328198B2 (en) | 2013-10-24 | 2014-10-15 | Composition for forming resist underlayer |
| TW103136567A TWI626257B (zh) | 2013-10-24 | 2014-10-23 | Forming a composition of the photoresist underlayer film |
| KR1020140144138A KR101906788B1 (ko) | 2013-10-24 | 2014-10-23 | 레지스트 하층막 형성 조성물 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013221111A JP6255210B2 (ja) | 2013-10-24 | 2013-10-24 | レジスト下層膜形成組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015081248A JP2015081248A (ja) | 2015-04-27 |
| JP2015081248A5 true JP2015081248A5 (enExample) | 2016-06-30 |
| JP6255210B2 JP6255210B2 (ja) | 2017-12-27 |
Family
ID=52995833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013221111A Active JP6255210B2 (ja) | 2013-10-24 | 2013-10-24 | レジスト下層膜形成組成物 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9328198B2 (enExample) |
| JP (1) | JP6255210B2 (enExample) |
| KR (1) | KR101906788B1 (enExample) |
| TW (1) | TWI626257B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6872530B2 (ja) * | 2016-03-31 | 2021-05-19 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| WO2019146378A1 (ja) * | 2018-01-23 | 2019-08-01 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法 |
| DE102019001137B3 (de) | 2019-02-15 | 2020-08-06 | Karlsruher Institut für Technologie | Gemusterte, dendrimere Substratoberflächen sowie deren Herstellung und Verwendung |
| JP7655223B2 (ja) * | 2019-10-09 | 2025-04-02 | 日産化学株式会社 | レジスト下層膜形成組成物 |
| CN114200776A (zh) | 2020-01-15 | 2022-03-18 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
| CN113087896B (zh) * | 2021-04-12 | 2023-10-13 | 东莞市华盈新材料有限公司 | 一种耐高温pa6t及其合成方法 |
| JP7861318B2 (ja) * | 2021-08-31 | 2026-05-19 | 三菱瓦斯化学株式会社 | スピンオンカーボン膜形成用組成物、スピンオンカーボン膜形成用組成物の製造方法、リソグラフィー用下層膜、レジストパターン形成方法、及び回路パターン形成方法 |
| JP2025130217A (ja) * | 2024-02-27 | 2025-09-08 | 信越化学工業株式会社 | 有機膜形成用組成物、有機膜形成方法及びパターン形成方法 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE791643A (fr) * | 1971-11-26 | 1973-03-16 | Sterwin Ag | Procede de preparation de nouveaux derives d'anthracene |
| US4123455A (en) * | 1977-06-13 | 1978-10-31 | American Cyanamid Company | Phenenyltris(carbonylimino) multi-anionic substituted triphenyl acids and salts |
| US4118585A (en) * | 1977-07-01 | 1978-10-03 | American Cyanamid Company | Anionic benzene tetrakis carbonylimino isophthalic acid salts |
| ATE156158T1 (de) * | 1992-04-14 | 1997-08-15 | Cornell Res Foundation Inc | Makromoleküle auf basis von dendritischen polymeren und verfahren zur herstellung |
| WO1995020590A1 (en) * | 1994-01-27 | 1995-08-03 | The Trustees Of Columbia University In The City Of New York | Enantioselective receptors for amino acid derivatives, and other compounds |
| JP3525152B2 (ja) * | 1996-09-30 | 2004-05-10 | 独立行政法人 科学技術振興機構 | エポキシ樹脂硬化性組成物 |
| US5917020A (en) * | 1997-01-15 | 1999-06-29 | Kluger; Ronald H. | Bis-tetrameric hemoglobin and reagents for its production |
| JPH1160540A (ja) * | 1997-08-18 | 1999-03-02 | Nippon Steel Chem Co Ltd | 芳香族エステル（メタ）アクリレートデンドリマー及び硬化性樹脂組成物 |
| JPH1160973A (ja) * | 1997-08-21 | 1999-03-05 | Teijin Ltd | 分岐状ポリマーを含有する光学用樹脂組成物 |
| ES2241867T3 (es) * | 2000-09-07 | 2005-11-01 | Telik, Inc. | Amidas del acido bencenotricarboxilico como activadores del receptor de insulina. |
| JP2002328466A (ja) * | 2001-05-02 | 2002-11-15 | Jsr Corp | ポジ型感放射線性組成物 |
| JP2003238495A (ja) * | 2002-02-21 | 2003-08-27 | Sangaku Renkei Kiko Kyushu:Kk | 化学発光性ポリフェノールデンドリマー |
| JP4016414B2 (ja) * | 2002-02-21 | 2007-12-05 | 日本曹達株式会社 | 新規デンドリマー及びその製造方法 |
| JP4121309B2 (ja) * | 2002-05-31 | 2008-07-23 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
| JP2004323562A (ja) * | 2003-04-22 | 2004-11-18 | Jsr Corp | デンドリマーの製造法 |
| KR20110112475A (ko) * | 2003-09-12 | 2011-10-12 | 스미또모 가가꾸 가부시키가이샤 | 덴드리머 화합물 및 그것을 사용한 유기 발광 소자 |
| US20050214674A1 (en) | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| US7754818B2 (en) * | 2005-01-11 | 2010-07-13 | Brewer Science Inc. | Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers |
| MY145424A (en) * | 2005-02-07 | 2012-02-15 | Ciba Holding Inc | Functionalized esters, amides or urethanes of perfluorinated alcohols or amines as surface modifiers |
| WO2007029794A1 (ja) * | 2005-09-07 | 2007-03-15 | Nippon Soda Co., Ltd. | スターポリマー及びその製造方法 |
| JP2007211207A (ja) * | 2006-02-13 | 2007-08-23 | Dainippon Ink & Chem Inc | 星型高分子化合物及びその製造方法 |
| JP5420902B2 (ja) * | 2006-07-11 | 2014-02-19 | 日本曹達株式会社 | スターポリマー及びその製造方法 |
| US20080020043A1 (en) * | 2006-07-20 | 2008-01-24 | Marc Gingras | Dendrimer-Drug Conjugates |
| US9127130B2 (en) * | 2006-08-11 | 2015-09-08 | Starpharma Pty Ltd. | Polylysine dendrimer contrast agent |
| TWI331611B (en) * | 2006-11-23 | 2010-10-11 | Ind Tech Res Inst | Mononuclear star-branched polymer dielectric material and organic thin film transistor |
| JP2008231174A (ja) * | 2007-03-19 | 2008-10-02 | Fujifilm Corp | 膜形成用組成物、絶縁膜及び電子デバイス |
| EP2109005A1 (en) * | 2008-04-07 | 2009-10-14 | Stichting Dutch Polymer Institute | Process for preparing a polymeric relief structure |
| TWI416262B (zh) * | 2009-03-13 | 2013-11-21 | Jsr Corp | A silicon film-forming composition, a silicon-containing film, and a pattern-forming method |
| DE102009027982A1 (de) * | 2009-07-24 | 2011-01-27 | Robert Bosch Gmbh | Sternpolymer |
| JPWO2011074494A1 (ja) | 2009-12-14 | 2013-04-25 | 日産化学工業株式会社 | レジスト下層膜形成組成物 |
| WO2012017790A1 (ja) | 2010-08-02 | 2012-02-09 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
| EP2791232A1 (en) * | 2011-12-16 | 2014-10-22 | Ticona LLC | Nucleating system for polyarylene sulfide compositions |
| JP5927910B2 (ja) * | 2011-12-28 | 2016-06-01 | コニカミノルタ株式会社 | 位相差フィルム、その製造方法、偏光板及び液晶表示装置 |
| JP5910199B2 (ja) * | 2012-03-14 | 2016-04-27 | 凸版印刷株式会社 | 二次電池用正極活物質及びそれを用いた二次電池 |
-
2013
- 2013-10-24 JP JP2013221111A patent/JP6255210B2/ja active Active
-
2014
- 2014-10-15 US US14/514,728 patent/US9328198B2/en active Active
- 2014-10-23 KR KR1020140144138A patent/KR101906788B1/ko active Active
- 2014-10-23 TW TW103136567A patent/TWI626257B/zh active
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