JP2015081248A5 - - Google Patents

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Publication number
JP2015081248A5
JP2015081248A5 JP2013221111A JP2013221111A JP2015081248A5 JP 2015081248 A5 JP2015081248 A5 JP 2015081248A5 JP 2013221111 A JP2013221111 A JP 2013221111A JP 2013221111 A JP2013221111 A JP 2013221111A JP 2015081248 A5 JP2015081248 A5 JP 2015081248A5
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Japan
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skeleton
group
carbon atoms
different
same
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JP2013221111A
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English (en)
Japanese (ja)
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JP2015081248A (ja
JP6255210B2 (ja
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Priority to JP2013221111A priority Critical patent/JP6255210B2/ja
Priority claimed from JP2013221111A external-priority patent/JP6255210B2/ja
Priority to US14/514,728 priority patent/US9328198B2/en
Priority to TW103136567A priority patent/TWI626257B/zh
Priority to KR1020140144138A priority patent/KR101906788B1/ko
Publication of JP2015081248A publication Critical patent/JP2015081248A/ja
Publication of JP2015081248A5 publication Critical patent/JP2015081248A5/ja
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Publication of JP6255210B2 publication Critical patent/JP6255210B2/ja
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JP2013221111A 2013-10-24 2013-10-24 レジスト下層膜形成組成物 Active JP6255210B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2013221111A JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物
US14/514,728 US9328198B2 (en) 2013-10-24 2014-10-15 Composition for forming resist underlayer
TW103136567A TWI626257B (zh) 2013-10-24 2014-10-23 Forming a composition of the photoresist underlayer film
KR1020140144138A KR101906788B1 (ko) 2013-10-24 2014-10-23 레지스트 하층막 형성 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013221111A JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物

Publications (3)

Publication Number Publication Date
JP2015081248A JP2015081248A (ja) 2015-04-27
JP2015081248A5 true JP2015081248A5 (enExample) 2016-06-30
JP6255210B2 JP6255210B2 (ja) 2017-12-27

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Family Applications (1)

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JP2013221111A Active JP6255210B2 (ja) 2013-10-24 2013-10-24 レジスト下層膜形成組成物

Country Status (4)

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US (1) US9328198B2 (enExample)
JP (1) JP6255210B2 (enExample)
KR (1) KR101906788B1 (enExample)
TW (1) TWI626257B (enExample)

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JP6872530B2 (ja) * 2016-03-31 2021-05-19 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
WO2019146378A1 (ja) * 2018-01-23 2019-08-01 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法
DE102019001137B3 (de) 2019-02-15 2020-08-06 Karlsruher Institut für Technologie Gemusterte, dendrimere Substratoberflächen sowie deren Herstellung und Verwendung
US20220334483A1 (en) * 2019-10-09 2022-10-20 Nissan Chemical Corporation Resist underlayer film-forming composition
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN113087896B (zh) * 2021-04-12 2023-10-13 东莞市华盈新材料有限公司 一种耐高温pa6t及其合成方法
WO2023032998A1 (ja) * 2021-08-31 2023-03-09 三菱瓦斯化学株式会社 スピンオンカーボン膜形成用組成物、スピンオンカーボン膜形成用組成物の製造方法、リソグラフィー用下層膜、レジストパターン形成方法、及び回路パターン形成方法
JP2025130217A (ja) * 2024-02-27 2025-09-08 信越化学工業株式会社 有機膜形成用組成物、有機膜形成方法及びパターン形成方法

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