CN113219786A - 光刻方法和制造半导体器件的方法 - Google Patents
光刻方法和制造半导体器件的方法 Download PDFInfo
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- CN113219786A CN113219786A CN202011085310.XA CN202011085310A CN113219786A CN 113219786 A CN113219786 A CN 113219786A CN 202011085310 A CN202011085310 A CN 202011085310A CN 113219786 A CN113219786 A CN 113219786A
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- semiconductor device
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- photoresist layer
- photoresist
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
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- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 111
- 239000000203 mixture Substances 0.000 claims abstract description 66
- 239000000654 additive Substances 0.000 claims abstract description 30
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 8
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 8
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- SGJSDMIZJMFOFH-UHFFFAOYSA-N diphenyl(trifluoromethyl)-lambda3-iodane Chemical compound C1(=CC=CC=C1)I(C(F)(F)F)C1=CC=CC=C1 SGJSDMIZJMFOFH-UHFFFAOYSA-N 0.000 description 1
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- 125000001033 ether group Chemical group 0.000 description 1
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- 230000005469 synchrotron radiation Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
Images
Classifications
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
Description
相关申请的交叉引用
通过引用将于2020年2月4日在韩国知识产权局提交的No.10-2020-0013150且标题为“Photoresist Composition,Photolithography Method Using the Same,andMethod of Manufacturing Semiconductor Device Using the Same”(光致抗蚀剂组合物、使用该光致抗蚀剂组合物的光刻方法和使用该光致抗蚀剂组合物制造半导体器件的方法)的韩国专利申请全部合并于此。
技术领域
实施例涉及光致抗蚀剂组合物、使用该光致抗蚀剂组合物的光刻方法以及使用该光致抗蚀剂组合物制造半导体器件的方法。
背景技术
为了对于消费者满足优异性能和低成本,需要提高半导体器件的集成度并改善半导体器件的可靠性。
发明内容
实施例可以通过提供一种光刻方法来实现,所述光刻方法包括:在衬底上施用组合物以形成光致抗蚀剂层;使用极紫外辐射(EUV)对所述光致抗蚀剂层执行曝光工艺;以及使所述光致抗蚀剂层显影以形成光致抗蚀剂图案,其中,所述组合物包括光敏树脂、光酸产生剂、光可分解猝灭剂、添加剂和溶剂,所述添加剂是由下面的式4A表示的化合物:
[式4A]
在式4A中,R1至R5均独立地为氢或碘,R1至R5中的至少一者为碘。
实施例可以通过提供一种制造半导体器件的方法来实现,所述方法包括:在衬底上形成目标层;在目标层上施用组合物以形成光致抗蚀剂层;使用极紫外辐射(EUV)对所述光致抗蚀剂层执行曝光工艺;使所述光致抗蚀剂层显影以形成光致抗蚀剂图案;以及使用所述光致抗蚀剂图案作为掩模执行用于将所述目标层图案化的蚀刻工艺,其中,所述组合物包括作为添加剂的由下面的式4A表示的化合物,
[式4A]
在式4A中,R1至R5均独立地为氢或碘,R1至R5中的至少一者为碘。
附图说明
通过参考附图详细描述示例性实施例,特征对于本领域技术人员将是明显的,在附图中:
图1是用于说明EUV光刻设备的图;
图2是示出碳(C)、氢(H)、氧(O)和硫(S)以及诸如氟(F)、氯(Cl)、溴(Br)和碘(I)的卤素元素的EUV吸收截面的图;
图3A、图4A、图5A和图6A是根据实施例的光刻工艺中的各阶段的俯视图;
图3B、图4B、图5B和图6B是沿图3A、图4A、图5A和图6A的线A-A'截取的剖视图。
具体实施方式
在说明书中,术语“取代的或未取代的”可以表示被选自由氢原子、卤素原子、烷基、羟基、烷氧基、醚基、烯基、芳基、烃环基和杂环基组成的组的一个或更多个取代基取代或未被取代。
在说明书中,卤素原子可以包括氟、氯、碘和/或溴。
在说明书中,烷基可以是直链烷基、支链烷基或环状烷基。除非另有说明,否则烷基的碳数可以为1个至10个碳原子。烷基的示例可以包括甲基和乙基。
在说明书中的化学式中,如果未在需要化学键的位置绘制化学键,则除非另外定义,否则可以表示氢原子在该位置键合。
图1是用于说明极紫外(EUV)光刻设备的图。
参照图1,EUV光刻设备100可以包括光束整形系统或光束整形器110、照明系统或照明器120、光掩模130和投影系统或投影仪140。光束整形器110、照明器120和投影仪140可以位于每个壳体中。在实施方式中,光束整形器110可以部分地或整体上集成在照明器120中。
光束整形器110可以包括光源111、集光器112和单色仪113。
光源111可以是激光等离子体源、气体放电源或同步辐射源。从光源111发射的光可以具有大约5nm至大约20nm的范围内的波长。照明器120和投影仪140可以被构成或设计为在波长范围内操作。从光源111发射的EUV可以被集光器112聚集。单色仪113可以过滤具有不期望的波长的光。
在光束整形器110中控制了波长和空间分布的EUV可以被引入照明器120中。在实施方式中,如图1所示,照明器120可以包括两个反射镜121和122。反射镜121和122均可以是多层反射镜。
通过照明器120中的反射镜121和122,EUV可以朝向光掩模130入射。在实施方式中,光掩模130可以包括要转录到衬底150上的特定图案。入射的EUV可以被光掩模130的特定图案反射。反射的EUV可以通过投影仪140投影在其上涂覆有光致抗蚀剂组合物的衬底150上。在实施方式中,可以形成光掩模130以反射EUV。
投影仪140可以将从光掩模130反射的EUV照射到其上涂覆有光致抗蚀剂组合物的衬底150。通过将EUV照射在衬底150上,可以在光致抗蚀剂组合物中制得图案结构的图像。在实施方式中,如图1所示,投影仪140可以包括两个反射镜141和142。反射镜141和142均可以是多层反射镜。
在下文中,将详细说明根据实施例的光致抗蚀剂组合物。光致抗蚀剂组合物可以用于形成图案或用于制造半导体器件。在实施方式中,光致抗蚀剂组合物可以用于制造半导体器件的图案化工艺中。光致抗蚀剂组合物可以是用于EUV的光致抗蚀剂组合物或用于电子束的光致抗蚀剂组合物。EUV可以表示波长为大约10nm至大约124nm(例如,大约13.0nm至大约13.9nm,或大约13.4nm至大约13.6nm)的紫外辐射。EUV可以表示具有大约6.21eV至大约124eV(例如,大约90eV至大约95eV)的能量的光。根据实施例的光致抗蚀剂组合物可以是化学放大型(CAR型)光致抗蚀剂组合物。
根据实施例的光致抗蚀剂组合物可以包括例如光敏树脂、光酸产生剂(photo-acid generator,PAG)、光可分解猝灭剂(PDQ)、添加剂和溶剂。
在实施方式中,光敏树脂可以包括由下面的式1A表示的化合物。
[式1A]
在式1A中,例如,R6可以为氢或具有1个至15个碳原子的烷基。“n”可以为例如10至1,000,000的整数。
在实施方式中,光敏树脂可以包括由下面的式1B表示的聚合物。
[式1B]
在式1B中,例如,R6可以为氢或具有1个至15个碳原子的烷基。“m”可以为例如10至1,000,000的整数。
在实施方式中,光敏树脂可以包括由下面的式1C表示的嵌段共聚物。
[式1C]
在式1C中,例如,R6和R7可以均独立地为氢或具有1个至15个碳原子的烷基。“n”和“m”可以均独立地为例如10至1,000,000的整数。
在实施方式中,光敏树脂可以包括由下面的式1D表示的嵌段共聚物。
[式1D]
在式1D中,“n”和“m”可以均独立地为例如10至1,000,000的整数。
光酸产生剂可以响应于曝光工艺产生氢离子,这将在下面更详细地描述。光酸产生剂可以包括可以由于光或响应于光而产生酸的材料。在实施方式中,光酸产生剂可以包括由下面的式2A表示的阳离子和由下面的式2B表示的阴离子。
[式2A]
在式2A中,例如,R9至R11可以均独立地为氢、卤素、取代的或未取代的羧基、取代的或未取代的烷氧基或具有1个至15个碳原子的烷基。
[式2B]
在式2B中,例如,R8可以为氢、卤素、取代的或未取代的羧基、取代的或未取代的烷氧基或具有1个至15个碳原子的烷基。“k”可以为1至20的整数。由式2A的阳离子和式2B的阴离子组成的光酸产生剂可以被称为三苯基锍三氟甲烷磺酸盐(triphenylsulfoniumtriflate,TPS-Tf)。
作为式2B的特定实施例,光酸产生剂可以包括由下面的式2C表示的阴离子。
[式2C]
在实施方式中,光酸产生剂可以包括由下面的式2D表示的阳离子和由上面的式2B表示的阴离子。
[式2D]
由式2D的阳离子和式2B的阴离子组成的光酸产生剂可以被称为二苯基碘三氟甲烷磺酸盐(DPT-Tf)。
光可分解猝灭剂(在下文中,猝灭剂)可以包括基体材料。在实施方式中,猝灭剂可以包括由下面的式2A表示的阳离子和由下面的式3A或式3B之一表示的阴离子。
[式2A]
在式2A中,例如,R9至R11可以均独立地为氢、卤素、取代的或未取代的羧基、取代的或未取代的烷氧基或具有1个至15个碳原子的烷基。
[式3A]
[式3B]
在式3A和式3B中,例如,R12和R13可以均独立地为氢、卤素、取代的或未取代的羧基、取代的或未取代的烷氧基或具有1个至15个碳原子的烷基。由式2A的阳离子和式3A或式3B的阴离子组成的光酸产生剂可以被称为三苯基锍羧酸盐(triphenylsulfoniumcarboxylate)。
在实施方式中,猝灭剂可以包括胺,并且胺可以是叔胺。在实施方式中,叔胺的碳数可以是例如10个至100个。例如,猝灭剂可以包括由式3C表示的材料和/或由式3D表示的材料。由式3C表示的材料可以是三(正辛基)胺。由式3D表示的材料可以是1,8-二氮杂双环[5,4,0]十一碳-7-烯(DBU)。
[式3C]
[式3D]
在实施方式中,例如,溶剂可以包括乙酸乙酯溶纤剂(ECA)、乳酸乙酯(EL)、丙二醇单甲醚乙酸酯(PGMEA)、丙二醇甲醚(PGME)、乙酸正丁酯(n-BA)、2-庚酮(MAK)、甲乙酮(MEK)、N,N-二甲基甲酰胺(DMF)、N-甲基吡咯烷酮(NMP)、3-乙氧基丙酸乙酯(EEP)、3-甲氧基丙酸甲酯(MMP)、丙酮酸乙酯(EP)或异丙醇(IPA)。
在下文中,将更详细地说明根据实施例的作为添加剂的碘苯酚化合物。
添加剂可以包括由下面的式4A表示的化合物。
[式4A]
在式4A中,例如,R1至R5可以均独立地为氢、卤素、具有1个至15个碳原子的烷基或具有6个至18个碳原子的芳基。烷基和芳基均可以取代有卤素或未被取代。在实施方式中,R1至R5中的至少一个可以是碘(I)。在实施方式中,式4A的化合物可以是通过用碘(I)取代苯酚的至少一个氢原子获得的化合物。在实施方式中,R1至R5中的至少一者可以是碘(I),并且其他的可以是氢。
在实施方式中,添加剂(即,碘苯酚化合物)可以包括由下面的式4B至式4F之一表示的化合物。
[式4B]
[式4C]
[式4D]
[式4E]
[式4F]
碘苯酚化合物是添加剂,并且可以是光致抗蚀剂组合物的组分,例如,可以是形成组合物的组分的混合物的组分。碘苯酚化合物可以不与光致抗蚀剂组合物中的另一种材料发生化学反应,并且可以仅以一种分子形状存在。
如果将碘苯酚化合物用作包括作为光敏树脂的聚合物的单元,则可能无法满足光致抗蚀剂组合物中所需的光敏树脂的物理性质。此外,碘苯酚化合物由于其分子结构和性质而不可用作光酸产生剂或猝灭剂。在实施方式中,根据实施方案的光致抗蚀剂组合物可以包括碘苯酚化合物作为添加剂,以便混合在组合物中以有助于增加EUV吸收。
碘苯酚化合物可以具有与光敏树脂的式1A的聚合物(例如,聚羟基苯乙烯(PHS))相似的分子结构。在实施方式中,碘苯酚化合物可以均匀地分散在光敏树脂聚合物之间。在实施方式中,碘苯酚化合物可以均匀地混合在光致抗蚀剂组合物中。
在光致抗蚀剂层的曝光工艺期间,光敏树脂可以吸收光(即,EUV)并发射二次电子。二次电子可以移动并被光酸产生剂捕获。光酸产生剂可以使转移的二次电子分解并产生氢离子(H+)。
如果用于EUV的光致抗蚀剂组合物的EUV吸收增加,则二次电子的产生率和酸(即,H+)的产生率可以增大。在实施方式中,如果用于EUV的光致抗蚀剂组合物的EUV吸收增加,则可以改善光刻工艺的精确度和准确性。
在实施方式中,如上所述,光致抗蚀剂组合物中的光敏树脂、光酸产生剂、猝灭剂和溶剂可以仅由碳(C)、氢(H)、氧(O)和硫(S)组成。碳(C)、氢(H)、氧(O)和硫(S)可以具有低EUV吸收的缺点。
根据实施例的添加剂例如碘苯酚化合物可以有助于增加光致抗蚀剂组合物的EUV吸收。碘(I)可以具有比上述碳(C)、氢(H)、氧(O)和硫(S)更高的EUV吸收。碘(I)也可以比其他卤素原子(例如,溴(Br)、氟(F)等)表现出更高的EUV吸收。根据实施例的碘苯酚化合物可以通过分子中的碘(I)高效地吸收EUV。
在实施方式中,例如,光致抗蚀剂组合物可以包括大约0.5wt%至大约5wt%的光敏树脂,大约0.01wt%至大约3wt%的光酸产生剂,大约0.01wt%至大约3wt%的猝灭剂,大约0.1wt%至大约1wt%的添加剂,以及余量或平衡量的溶剂(例如,基于组合物的总重量)。
碘苯酚化合物添加剂可以具有改善或增加的EUV吸收性质。EUV吸收性质可以通过EUV吸收系数来评价。
图2是示出碳(C)、氢(H)、氧(O)和硫(S)以及卤素元素(氟(F)、氯(Cl)、溴(Br)和碘(I))的EUV吸收截面的图。EUV吸收截面可以是通过将每个元素的EUV吸收系数除以其原子数密度而获得的值。
参照图2,可以看出,相对于组成光致抗蚀剂组合物的元素,例如,碳(C)、氢(H)、氧(O)和硫(S),碘(I)具有非常高的EUV吸收。另外,可以看出,相对于其他卤素元素中的每一种,例如,氟(F)、氯(Cl)和溴(Br),碘(I)具有非常高的EUV吸收。例如,可以看出,包括碘(I)的光致抗蚀剂组合物可以有助于增加EUV吸收。
在下文中,将说明根据实施例的光刻工艺和使用光致抗蚀剂组合物制造半导体器件的方法。
图3A、图4A、图5A和图6A是根据实施例的光刻工艺中的各阶段的俯视图。图3B、图4B、图5B和图6B是沿图3A、图4A、图5A和图6A的线A-A'截取的剖视图。
参照图3A和图3B,可以准备衬底150。衬底150可以是诸如硅晶片的半导体晶片。在衬底150上,可以依次形成目标层TGL、底层UDL和光致抗蚀剂层PRL。
目标层TGL可以包括例如半导体材料、导电材料和绝缘材料或其组合。目标层TGL可以是待蚀刻的目标层或硬掩模。在实施方式中,还可以在衬底150与目标层TGL之间设置一个或更多个层。
底层UDL可以是涂覆在目标层TGL上的涂层。底层UDL可以起到将光致抗蚀剂层PRL附着到目标层TGL上的粘合层的作用。底层UDL可以包括聚合物树脂。底层UDL还可以包括来自根据实施例的光致抗蚀剂组合物中的上述添加剂,即,碘苯酚化合物。在这种情况下,还可以增加底层UDL的EUV吸收。
在实施方式中,底层UDL可以选择性地或可选地包括碘苯酚化合物。在实施方式中,光致抗蚀剂层PRL可以基本上包括碘苯酚化合物作为添加剂,以有助于增加直接EUV吸收。
可以通过将上述光致抗蚀剂组合物施用在底层UDL上来形成光致抗蚀剂层PRL。光致抗蚀剂层PRL的形成可以包括通过旋涂将光致抗蚀剂组合物施用在底层UDL上。
可以对光致抗蚀剂层PRL执行热处理工艺。热处理工艺可以对应于光致抗蚀剂层PRL的烘烤工艺。通过烘烤工艺,可以去除光致抗蚀剂组合物中的溶剂。
参照图4A和图4B,可以将光致抗蚀剂层PRL暴露于EUV。通过参照图1说明的EUV光刻设备,可以将光致抗蚀剂层PRL暴露于EUV。通过图1的光掩模130,可以将EUV选择性地照射在光致抗蚀剂层PRL的第一部分P1上。光致抗蚀剂层PRL的第二部分P2可以未暴露于EUV。
当光致抗蚀剂层PRL暴露于EUV时,光敏树脂可以如上所述发射二次电子。如果二次电子的产生率增大,则可以准确地且快速地形成第一部分P1。根据实施例的光致抗蚀剂层PRL可以包括碘苯酚化合物作为添加剂,并且可以实现高的EUV吸收。因此,可以改善二次电子的产生率。
光致抗蚀剂层PRL的第二部分P2未暴露于EUV,并且第二部分P2中的化合物的化学结构不会改变。因此,在完成EUV照射之后,光致抗蚀剂层PRL的第一部分P1和第二部分P2可以具有不同的化学结构。例如,光致抗蚀剂层PRL的第一部分P1和第二部分P2可以相对于显影液具有不同的溶解度。
参照图5A和图5B,光致抗蚀剂层PRL的第二部分P2可以被显影液溶解并且可以被选择性地去除。光致抗蚀剂层PRL的第一部分P1可以不溶于显影液并且保持完整。剩余的第一部分P1可以形成光致抗蚀剂图案PRP。例如,可以通过对光致抗蚀剂层PRL执行曝光和显影工艺来形成光致抗蚀剂图案PRP。
在实施方式中,光致抗蚀剂图案PRP可以形成为在一个方向上平行地纵向延伸的线形。光致抗蚀剂图案PRP可以以特定节距PI形成。光致抗蚀剂图案PRP可以具有线宽WI。成对的相邻的光致抗蚀剂图案PRP可以彼此分离特定距离DI。光致抗蚀剂图案PRP的节距PI可以是线宽WI和距离DI的总和。
在光刻工艺中,可以将在特定节距PI下光致抗蚀剂图案PRP之间的最小距离DI限定为最小临界尺寸(最小CD)。如果光致抗蚀剂图案PRP之间的距离DI是小于最小CD的值,则光致抗蚀剂图案PRP不会彼此分离而是可以凝聚形成一个块。因此,随着最小CD的减小,光刻工艺的精确度可以增加。
图5A所示的光致抗蚀剂图案PRP的平面形状是举例说明。根据实施例的光致抗蚀剂图案PRP的平面形状可以具有各种形状,诸如之字形、蜂窝形和圆形。
参照图6A和图6B,可以通过使用光致抗蚀剂图案PRP作为掩模相对于衬底150执行蚀刻工艺,以依次蚀刻底层UDL和目标层TGL。利用此工艺,可以通过光致抗蚀剂图案PRP将目标层TGL图案化。
实验示例
分别使用式4B、式4C和式4F的碘苯酚化合物作为添加剂来制备根据示例1、示例2和示例3的光致抗蚀剂组合物。
分别使用下面的式5A的化合物、下面的式5B的化合物和下面的式5C的化合物作为添加剂来制备根据比较示例1、比较示例2和比较示例3的光致抗蚀剂组合物。
[式5A]
[式5B]
[式5C]
制备没有添加剂的光致抗蚀剂组合物(比较示例4)作为对照组。
基于由此制备的光致抗蚀剂组合物,可以执行根据图3A至图5B的光刻工艺以形成光致抗蚀剂图案。测量由此形成的光致抗蚀剂图案的最小CD。光致抗蚀剂图案之间的节距为大约36nm。结果示出在下面的表1中。
[表1]
参照表1,可以看出,当与作为对照组的比较示例4的光致抗蚀剂组合物相比时,根据示例1、示例2和示例3的光致抗蚀剂组合物示出最小CD减小了大约1nm。添加剂中包括更多碘(I)的示例3具有最低的最小CD。如果苯酚的更多的氢原子被碘(I)取代或替换,则EUV吸收可以增加。
可以看出,当与比较示例4的光致抗蚀剂组合物相比时,比较示例1和比较示例3的光致抗蚀剂组合物显示出最小CD未改变。换言之,可以看出,当碘(I)不包括在苯酚添加剂中,观察到对EUV吸收无特定影响。此外,可以看出,当使用氟(F)代替碘(I)时,对EUV吸收没有或没有显著的有益效果(参见比较示例1)。
另外,可以看出,当与比较示例4的光致抗蚀剂组合物相比时,比较示例2的光致抗蚀剂组合物显示出最小CD的变化很小。可以看出,如果在苯酚中取代或包括除碘(I)之外的另外的官能团(例如,烷基),则EUV吸收会被抑制。
通过总结和回顾,随着半导体器件的集成度的增加,在半导体器件的制造期间可能需要更精细的图案化。可以通过使用光致抗蚀剂层的曝光工艺和显影工艺来执行待蚀刻的目标层的图案化。
一个或更多个实施例可以提供用于极紫外辐射(EUV)的光致抗蚀剂组合物。
一个或更多个实施例可以提供可改善使用EUV的光刻工艺的精确度和准确性的光致抗蚀剂组合物。
根据实施例,光致抗蚀剂组合物可以具有高EUV吸收。因此,可以改善光刻工艺的精确度和准确性。
本文已经公开了示例实施例,并且尽管采用了特定术语,但是仅在一般和描述性意义上使用和解释它们,而不是出于限制的目的。在某些情况下,对于到提交本申请时为止的本领域普通技术人员而言将明显的是,结合具体实施例描述的特征、特性和/或元件可以单独使用,或与结合其他实施例描述的特征、特性和/或元件组合使用,除非另有明确说明。因此,本领域技术人员将理解,在不脱离权利要求书中阐述的本发明的精神和范围的情况下,可以做出形式上和细节上的各种改变。
Claims (20)
5.根据权利要求1所述的光刻方法,其中,所述添加剂均匀地混合在所述组合物中。
6.根据权利要求1所述的光刻方法,其中,所述溶剂包括乙酸乙酯溶纤剂、乳酸乙酯、丙二醇单甲醚乙酸酯、丙二醇甲醚、乙酸正丁酯、2-庚酮、甲乙酮、N,N-二甲基甲酰胺、N-甲基吡咯烷酮、3-乙氧基丙酸乙酯、3-甲氧基丙酸甲酯、丙酮酸乙酯或异丙醇。
7.根据权利要求1所述的光刻方法,其中,在所述组合物中:
所述光敏树脂的量为0.5wt%至5wt%,
所述光酸产生剂的量为0.01wt%至3wt%,
所述光可分解猝灭剂的量为0.01wt%至3wt%,
所述添加剂的量为0.1wt%至1wt%,所有的wt%基于所述组合物的总重量。
8.根据权利要求1所述的光刻方法,所述光刻方法还包括在所述光致抗蚀剂层下方形成底层。
9.根据权利要求8所述的光刻方法,其中,所述底层包括由式4A表示的化合物作为添加剂。
10.根据权利要求1所述的光刻方法,所述光刻方法还包括:在执行所述曝光工艺之前,对所述光致抗蚀剂层执行热处理工艺。
15.根据权利要求11所述的制造半导体器件的方法,其中,所述添加剂是均匀地混合在所述组合物中的组分。
16.根据权利要求11所述的制造半导体器件的方法,其中,所述溶剂包括乙酸乙酯溶纤剂、乳酸乙酯、丙二醇单甲醚乙酸酯、丙二醇甲醚、乙酸正丁酯、2-庚酮、甲乙酮、N,N-二甲基甲酰胺、N-甲基吡咯烷酮、3-乙氧基丙酸乙酯、3-甲氧基丙酸甲酯、丙酮酸乙酯或异丙醇。
17.根据权利要求11所述的制造半导体器件的方法,所述方法还包括:在所述光致抗蚀剂层与所述目标层之间形成底层。
18.根据权利要求17所述的制造半导体器件的方法,其中,所述底层包括由式4A表示的化合物作为添加剂。
19.根据权利要求11所述的制造半导体器件的方法,所述方法还包括:在执行所述曝光工艺之前,对所述光致抗蚀剂层执行热处理工艺。
20.根据权利要求11所述的制造半导体器件的方法,其中,所述光致抗蚀剂图案之间的最小临界尺寸小于13.5nm。
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