JP6099553B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6099553B2 JP6099553B2 JP2013261442A JP2013261442A JP6099553B2 JP 6099553 B2 JP6099553 B2 JP 6099553B2 JP 2013261442 A JP2013261442 A JP 2013261442A JP 2013261442 A JP2013261442 A JP 2013261442A JP 6099553 B2 JP6099553 B2 JP 6099553B2
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- high resistance
- ion irradiation
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 150000002500 ions Chemical class 0.000 claims description 168
- 230000007547 defect Effects 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 62
- 230000001133 acceleration Effects 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 173
- 235000012431 wafers Nutrition 0.000 description 44
- 238000010884 ion-beam technique Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000001678 irradiating effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000011888 foil Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013261442A JP6099553B2 (ja) | 2013-12-18 | 2013-12-18 | 半導体装置の製造方法 |
| TW103143674A TWI553708B (zh) | 2013-12-18 | 2014-12-15 | Semiconductor device manufacturing method and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013261442A JP6099553B2 (ja) | 2013-12-18 | 2013-12-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015119039A JP2015119039A (ja) | 2015-06-25 |
| JP6099553B2 true JP6099553B2 (ja) | 2017-03-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013261442A Active JP6099553B2 (ja) | 2013-12-18 | 2013-12-18 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6099553B2 (zh) |
| TW (1) | TWI553708B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6425633B2 (ja) * | 2015-08-21 | 2018-11-21 | 住重アテックス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7125257B2 (ja) * | 2016-12-02 | 2022-08-24 | 住重アテックス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7169872B2 (ja) * | 2018-12-26 | 2022-11-11 | 住重アテックス株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7169871B2 (ja) * | 2018-12-26 | 2022-11-11 | 住重アテックス株式会社 | 半導体装置の製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617497B2 (ja) * | 1987-12-18 | 1997-06-04 | 松下電工株式会社 | 半導体装置 |
| US5198371A (en) * | 1990-09-24 | 1993-03-30 | Biota Corp. | Method of making silicon material with enhanced surface mobility by hydrogen ion implantation |
| JPH05121540A (ja) * | 1991-10-24 | 1993-05-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH09121052A (ja) * | 1995-08-21 | 1997-05-06 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
| JP3282550B2 (ja) * | 1996-11-13 | 2002-05-13 | トヨタ自動車株式会社 | 半導体装置およびその製造方法 |
| JP2000123778A (ja) * | 1998-10-14 | 2000-04-28 | Hitachi Ltd | イオン注入装置およびイオン注入方法 |
| JP4556255B2 (ja) * | 1998-12-07 | 2010-10-06 | 株式会社デンソー | 半導体装置の製造方法 |
| US7229891B2 (en) * | 2000-03-06 | 2007-06-12 | John Howard Coleman | Fabrication method for silicon-on defect layer in field-effect and bipolar transistor devices |
| JP2008244042A (ja) * | 2007-03-27 | 2008-10-09 | Denso Corp | 半導体基板およびその製造方法 |
| US20090212397A1 (en) * | 2008-02-22 | 2009-08-27 | Mark Ewing Tuttle | Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit |
| JP2010219258A (ja) * | 2009-03-17 | 2010-09-30 | Toyota Motor Corp | 半導体装置 |
| JP5261324B2 (ja) * | 2009-08-26 | 2013-08-14 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
| JP6057534B2 (ja) * | 2012-04-18 | 2017-01-11 | 住重試験検査株式会社 | 半導体装置の製造方法 |
| WO2013157183A1 (ja) * | 2012-04-18 | 2013-10-24 | 住重試験検査株式会社 | 半導体装置の製造方法、及び半導体装置 |
-
2013
- 2013-12-18 JP JP2013261442A patent/JP6099553B2/ja active Active
-
2014
- 2014-12-15 TW TW103143674A patent/TWI553708B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI553708B (zh) | 2016-10-11 |
| JP2015119039A (ja) | 2015-06-25 |
| TW201528341A (zh) | 2015-07-16 |
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