JP6096902B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP6096902B2 JP6096902B2 JP2015525671A JP2015525671A JP6096902B2 JP 6096902 B2 JP6096902 B2 JP 6096902B2 JP 2015525671 A JP2015525671 A JP 2015525671A JP 2015525671 A JP2015525671 A JP 2015525671A JP 6096902 B2 JP6096902 B2 JP 6096902B2
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- hafnium oxide
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- 239000004065 semiconductor Substances 0.000 title claims description 129
- 238000004519 manufacturing process Methods 0.000 title claims description 56
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 115
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 115
- 239000001301 oxygen Substances 0.000 claims description 47
- 229910052760 oxygen Inorganic materials 0.000 claims description 47
- 239000013078 crystal Substances 0.000 claims description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 38
- 229910052735 hafnium Inorganic materials 0.000 claims description 26
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 23
- 150000001768 cations Chemical class 0.000 claims description 16
- -1 oxygen ions Chemical class 0.000 claims description 15
- 230000005620 antiferroelectricity Effects 0.000 claims description 11
- 229910003460 diamond Inorganic materials 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 9
- 101100298996 Arabidopsis thaliana PBC2 gene Proteins 0.000 claims description 8
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 213
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- 239000003990 capacitor Substances 0.000 description 53
- 239000000758 substrate Substances 0.000 description 52
- 230000010287 polarization Effects 0.000 description 38
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 35
- 239000012535 impurity Substances 0.000 description 33
- 230000015654 memory Effects 0.000 description 31
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 28
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- 230000005621 ferroelectricity Effects 0.000 description 19
- 238000002484 cyclic voltammetry Methods 0.000 description 14
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- 229910052688 Gadolinium Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
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- 229910052692 Dysprosium Inorganic materials 0.000 description 7
- 229910052693 Europium Inorganic materials 0.000 description 7
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- 229910052779 Neodymium Inorganic materials 0.000 description 7
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- 230000000694 effects Effects 0.000 description 7
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- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 7
- 229910052691 Erbium Inorganic materials 0.000 description 6
- 229910052771 Terbium Inorganic materials 0.000 description 6
- 229910052775 Thulium Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
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- 229910052782 aluminium Inorganic materials 0.000 description 5
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- 239000011229 interlayer Substances 0.000 description 5
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 150000002736 metal compounds Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 229910004129 HfSiO Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910004491 TaAlN Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
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- 229910052715 tantalum Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910016066 BaSi Inorganic materials 0.000 description 2
- 229910004709 CaSi Inorganic materials 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 229910019974 CrSi Inorganic materials 0.000 description 2
- 229910016344 CuSi Inorganic materials 0.000 description 2
- 229910005347 FeSi Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910017961 MgNi Inorganic materials 0.000 description 2
- 229910017639 MgSi Inorganic materials 0.000 description 2
- 229910017028 MnSi Inorganic materials 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910004122 SrSi Inorganic materials 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910008812 WSi Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910006249 ZrSi Inorganic materials 0.000 description 2
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910001000 nickel titanium Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017109 AlON Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 238000004971 IR microspectroscopy Methods 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910007875 ZrAlO Inorganic materials 0.000 description 1
- 229910006252 ZrON Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
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- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
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- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
本実施形態の半導体装置は、第1の導電層と、第2の導電層と、第1の導電層と第2の導電層との間に設けられ、ハフニウム(Hf)と酸素(O)の総和が98原子%以上である酸化ハフニウムの強誘電体膜と、を備える。
本実施形態の半導体装置は、1トランジスタ型(1T型)のFeRAMであること以外第1の実施形態と同様である。強誘電体膜の構成や製造方法については第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、いわゆるBiCS(Bit−Cost Scalable)技術を用いた3次元構造の不揮発性半導体記憶装置である点で、第1または第2の実施形態と異なっている。強誘電体膜については第1または第2の実施形態と同様である。したがって、第1または第2の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、いわゆるVL−BiCS(Vertical−gate Ladder Bit−Cost Scalable:VLB)技術を用いた3次元構造の不揮発性半導体記憶装置である点で、第1ないし第3の実施形態と異なっている。強誘電体膜については第1ないし第3の実施形態と同様である。したがって、第1ないし第3の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、強誘電体薄膜を利用したFTJ(ferroelectric tunnel junction)素子を用いた不揮発性半導体記憶装置である点で、第1ないし第4の実施形態と異なっている。強誘電体膜については第1ないし第4の実施形態と同様である。したがって、第1ないし第4の実施形態と重複する内容については記述を省略する。
図7は、本実施形態の変形例の半導体装置の模式断面図である。本変形例の半導体装置は、第5の実施形態に対して、下部電極(第1の導電層)122と強誘電体膜30との間に、常誘電体膜124を備える点で異なっている。
MIM構造の素子を以下の方法で作製した。
MIS構造の素子を以下の方法で作製した。
MIFM構造のFTJ素子を以下の方法で作製した。
Claims (14)
- 絶縁層とゲート電極とが交互に積層される積層体と、
少なくとも一つの前記ゲート電極に対向して設けられる半導体層と、
前記半導体層と前記少なくとも一つのゲート電極との間に設けられ、ハフニウム(Hf)と酸素(O)の総和が98原子%以上であり空間群Pbc2 1 (空間群番号29番)の結晶構造を有する酸化ハフニウムが主成分である強誘電体層と、
を備えることを特徴とする半導体装置。 - 絶縁層とゲート電極とが交互に積層される積層体と、
少なくとも一つの前記ゲート電極に対向して設けられる半導体層と、
前記半導体層と前記少なくとも一つのゲート電極との間に設けられ、ハフニウム(Hf)と酸素(O)の総和が98原子%以上である酸化ハフニウムを含み、前記酸化ハフニウムの結晶構造が空間群Pbc2 1 (空間群番号29番)である強誘電体層と、
を備えることを特徴とする半導体装置。 - 前記酸化ハフニウム中のハフニウム(Hf)、酸素(O)およびジルコニウム(Zr)の総和が99原子%以上であることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記強誘電体層の層厚が10nm以下であることを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の導電層または前記第2の導電層が、AFM(Atomic Force Microprobe)のダイヤモンドのカンチレバーを4μNの圧力で接触させても損傷を受けない強度を有することを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 第1の導電層を準備し、
前記第1の導電層上に、ハフニウム(Hf)と酸素(O)の総和が98原子%以上であり、反強誘電性またはフェリ誘電性を有する酸化ハフニウム層を形成し、
前記酸化ハフニウム層上に第2の導電層を形成し、
550℃以上900℃以下、1ミリ秒以上60秒以下の第1の熱処理を行うことを特徴とする半導体装置の製造方法。 - 前記酸化ハフニウム層中のハフニウム(Hf)、酸素(O)およびジルコニウム(Zr)の総和が99原子%以上であることを特徴とする請求項6記載の半導体装置の製造方法。
- 前記酸化ハフニウム層が空間群Pbca(空間群番号61番)または空間群P42/nmc(空間群番号137番)の結晶構造を備えることを特徴とする請求項6または請求項7記載の半導体装置の製造方法。
- 前記第1の熱処理の後に、前記酸化ハフニウム層に絶対値が1.4V以上5V以下の電圧を印加することを特徴とする請求項6ないし請求項8いずれか一項記載の半導体装置の製造方法。
- 前記第1の熱処理の後に、前記酸化ハフニウム層に赤外線を照射することを特徴とする請求項6ないし請求項8いずれか一項記載の半導体装置の製造方法。
- 前記第1の熱処理の後に、550℃以上700℃以下の第2の熱処理を行うことを特徴とする請求項6ないし請求項8いずれか一項記載の半導体装置の製造方法。
- 前記第1の導電層または前記第2の導電層が、AFM(atomic force microprobe)のダイヤモンドのカンチレバーを4μNの圧力で接触させても損傷を受けない強度を有することを特徴とする請求項6ないし請求項11いずれか一項記載の半導体装置の製造方法。
- 前記第1の導電層または前記第2の導電層の、層中の酸素イオン数に酸素の価数2を乗じたものが陽イオン数に陽イオンの価数を乗じたものよりも少ないことを特徴とする請求項6ないし請求項12いずれか一項記載の半導体装置の製造方法。
- 前記第1の熱処理が非酸化性雰囲気であることを特徴とする請求項6ないし請求項13いずれか一項記載の半導体装置の製造方法。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10702940B2 (en) | 2018-08-20 | 2020-07-07 | Samsung Electronics Co., Ltd. | Logic switching device and method of manufacturing the same |
KR20200130469A (ko) * | 2018-04-02 | 2020-11-18 | 램 리써치 코포레이션 | 하프늄 나이트라이드 층들을 갖는 하프늄 옥사이드의 강유전체 (ferroelectric) 속성들 개질 |
US10923500B2 (en) | 2018-09-19 | 2021-02-16 | Toshiba Memory Corporation | Memory device |
US10923486B2 (en) | 2017-09-21 | 2021-02-16 | Toshiba Memory Corporation | Memory device |
CN113948520A (zh) * | 2019-03-26 | 2022-01-18 | 湘潭大学 | 一种氧化铪基铁电电容及其制备方法 |
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Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6193828B2 (ja) * | 2014-09-09 | 2017-09-06 | 東芝メモリ株式会社 | 不揮発性記憶装置及びその製造方法 |
US10153155B2 (en) * | 2015-10-09 | 2018-12-11 | University Of Florida Research Foundation, Incorporated | Doped ferroelectric hafnium oxide film devices |
US10056394B1 (en) * | 2017-06-22 | 2018-08-21 | Institut National De La Recherche Scientifique | Ferroelectric tunnel junction and method of fabrication thereof |
CN109698162A (zh) * | 2017-10-20 | 2019-04-30 | 萨摩亚商费洛储存科技股份有限公司 | 三维存储元件及其制造方法 |
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US11355504B2 (en) | 2018-05-31 | 2022-06-07 | Intel Corporation | Anti-ferroelectric capacitor memory cell |
US20200066511A1 (en) * | 2018-08-27 | 2020-02-27 | Intel Corporation | Fabrication of undoped hfo2 ferroelectric layer using pvd |
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US10707320B2 (en) * | 2018-10-19 | 2020-07-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Field effect transistors with ferroelectric dielectric materials |
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US11758737B2 (en) * | 2020-05-28 | 2023-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric memory device and method of forming the same |
WO2022064316A1 (ja) * | 2020-09-22 | 2022-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022052050A (ja) | 2020-09-23 | 2022-04-04 | キオクシア株式会社 | 半導体記憶装置 |
TWI784335B (zh) * | 2020-10-30 | 2022-11-21 | 台灣奈米碳素股份有限公司 | 三維半導體二極體裝置的製造方法 |
US20240188303A1 (en) * | 2021-06-22 | 2024-06-06 | University Of Southern California | Ultrahigh tunneling electroresistance in ferroelectric tunneling junction with giant barrier height modulation by monolayer graphene contact |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10287494A (ja) * | 1997-04-09 | 1998-10-27 | Tdk Corp | 積層薄膜およびその製造方法 |
JP2006270095A (ja) * | 2005-03-23 | 2006-10-05 | Samsung Electronics Co Ltd | 強誘電体構造物、これの製造方法、これを含む半導体装置及びそれの製造方法 |
JP2008199030A (ja) * | 2007-02-15 | 2008-08-28 | Samsung Electronics Co Ltd | 金属酸化膜パターン形成方法及びこれを利用した半導体素子の形成方法 |
JP2009088446A (ja) * | 2007-10-03 | 2009-04-23 | Toshiba Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の制御方法 |
JP2013187523A (ja) * | 2012-03-12 | 2013-09-19 | Toshiba Corp | 半導体記憶装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06334140A (ja) | 1992-12-16 | 1994-12-02 | Ricoh Co Ltd | 強誘電体材料および該材料を用いた半導体メモリ、光記録媒体ならびに微小変位制御素子 |
JP3177038B2 (ja) | 1992-12-28 | 2001-06-18 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
JPH10316495A (ja) | 1997-05-16 | 1998-12-02 | Sony Corp | 強誘電体およびメモリ素子ならびにそれらの製造方法 |
JP2000243090A (ja) | 1999-02-19 | 2000-09-08 | Toshiba Corp | ダイナミック型半導体記憶装置 |
KR100729231B1 (ko) | 2005-08-03 | 2007-06-15 | 삼성전자주식회사 | 강유전체 구조물, 강유전체 구조물의 형성 방법, 강유전체구조물을 구비하는 반도체 장치 및 그 제조 방법 |
JP4903919B1 (ja) * | 2010-08-19 | 2012-03-28 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置 |
US8546275B2 (en) * | 2011-09-19 | 2013-10-01 | Intermolecular, Inc. | Atomic layer deposition of hafnium and zirconium oxides for memory applications |
US9378814B2 (en) * | 2013-05-21 | 2016-06-28 | Sandisk Technologies Inc. | Sense amplifier local feedback to control bit line voltage |
JP6121819B2 (ja) | 2013-07-04 | 2017-04-26 | 株式会社東芝 | 半導体装置および誘電体膜 |
-
2015
- 2015-03-16 WO PCT/JP2015/057696 patent/WO2015141626A1/ja active Application Filing
- 2015-03-16 JP JP2015525671A patent/JP6096902B2/ja active Active
-
2016
- 2016-09-06 US US15/257,064 patent/US10096619B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10287494A (ja) * | 1997-04-09 | 1998-10-27 | Tdk Corp | 積層薄膜およびその製造方法 |
JP2006270095A (ja) * | 2005-03-23 | 2006-10-05 | Samsung Electronics Co Ltd | 強誘電体構造物、これの製造方法、これを含む半導体装置及びそれの製造方法 |
JP2008199030A (ja) * | 2007-02-15 | 2008-08-28 | Samsung Electronics Co Ltd | 金属酸化膜パターン形成方法及びこれを利用した半導体素子の形成方法 |
JP2009088446A (ja) * | 2007-10-03 | 2009-04-23 | Toshiba Corp | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の制御方法 |
JP2013187523A (ja) * | 2012-03-12 | 2013-09-19 | Toshiba Corp | 半導体記憶装置 |
Non-Patent Citations (5)
Title |
---|
JPN6015013586; J.M.Leger,A.Atouf,P.E.Tomazewski,A.S.Pereira: '"Pressure-induced phase transitions and volume changes in HfO2 up to 50 GPa"' PHYSICAL REVIEW B Vol.48,Num.1, 19930701, p.93-98, The American Physical Society * |
JPN6015013588; Kostas Sarakinos, D. Music, S. Mraz, M. To Baben, K. Jiang, F. Nahif, A. Braun, C. Zilkens,S. Konsta: '"On the phase formation of sputtered hafnium oxide and oxynitride films"' JOURNAL OF APPLIED PHYSICS Vol.108, 20100708, p.014904-1 - 014904-8 * |
JPN6015017741; BOESCKE, T.S. et al.: '"Ferroelectricity in hafnium oxide thin films"' Applied Physics Letters Vol.99 No.10, 20110905, pp. 102903-1 - 102903-3, AIP Publishing * |
JPN6016029461; T.Olsen, et al.: 'Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties' Applied Physiscs Letters Vol.101 No.8, 20120822, pp.082905-1 - 082905-4, AIP Publishing * |
JPN6016029464; J Muller, et al.: 'Ferroelectricity in yttrium-doped hafnium oxide' Applied Physiscs Letters Vol.110 No.11, 20111207, pp.114113-1 - 114113-5, AIP Publishing * |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10923486B2 (en) | 2017-09-21 | 2021-02-16 | Toshiba Memory Corporation | Memory device |
US11672129B2 (en) | 2017-09-21 | 2023-06-06 | Kioxia Corporation | Memory device |
KR20200130469A (ko) * | 2018-04-02 | 2020-11-18 | 램 리써치 코포레이션 | 하프늄 나이트라이드 층들을 갖는 하프늄 옥사이드의 강유전체 (ferroelectric) 속성들 개질 |
US11923404B2 (en) | 2018-04-02 | 2024-03-05 | Lam Research Corporation | Modifying ferroelectric properties of hafnium oxide with hafnium nitride layers |
KR102649015B1 (ko) * | 2018-04-02 | 2024-03-18 | 램 리써치 코포레이션 | 하프늄 나이트라이드 층들을 갖는 하프늄 옥사이드의 강유전체 (ferroelectric) 속성들 개질 |
US10702940B2 (en) | 2018-08-20 | 2020-07-07 | Samsung Electronics Co., Ltd. | Logic switching device and method of manufacturing the same |
US11305365B2 (en) | 2018-08-20 | 2022-04-19 | Samsung Electronics Co., Ltd. | Logic switching device and method of manufacturing the same |
US11701728B2 (en) | 2018-08-20 | 2023-07-18 | Samsung Electronics Co., Ltd. | Logic switching device and method of manufacturing the same |
US10923500B2 (en) | 2018-09-19 | 2021-02-16 | Toshiba Memory Corporation | Memory device |
CN113948520A (zh) * | 2019-03-26 | 2022-01-18 | 湘潭大学 | 一种氧化铪基铁电电容及其制备方法 |
US11355511B2 (en) | 2020-03-19 | 2022-06-07 | Kioxia Corporation | Semiconductor memory device |
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