JP6049966B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP6049966B2
JP6049966B2 JP2012233038A JP2012233038A JP6049966B2 JP 6049966 B2 JP6049966 B2 JP 6049966B2 JP 2012233038 A JP2012233038 A JP 2012233038A JP 2012233038 A JP2012233038 A JP 2012233038A JP 6049966 B2 JP6049966 B2 JP 6049966B2
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Prior art keywords
film
oxide semiconductor
electrode layer
semiconductor film
transistor
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Japanese (ja)
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JP2013110397A5 (enExample
JP2013110397A (ja
Inventor
克明 栃林
克明 栃林
聡 日向野
聡 日向野
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2013110397A5 publication Critical patent/JP2013110397A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2012233038A 2011-10-24 2012-10-22 半導体装置の作製方法 Active JP6049966B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012233038A JP6049966B2 (ja) 2011-10-24 2012-10-22 半導体装置の作製方法

Applications Claiming Priority (3)

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JP2011233264 2011-10-24
JP2011233264 2011-10-24
JP2012233038A JP6049966B2 (ja) 2011-10-24 2012-10-22 半導体装置の作製方法

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JP2013110397A JP2013110397A (ja) 2013-06-06
JP2013110397A5 JP2013110397A5 (enExample) 2015-11-12
JP6049966B2 true JP6049966B2 (ja) 2016-12-21

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US (2) US8846459B2 (enExample)
JP (3) JP6049966B2 (enExample)
KR (2) KR101976212B1 (enExample)
CN (2) CN107507805B (enExample)
TW (2) TW201717286A (enExample)

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JP2010156960A (ja) 2008-12-03 2010-07-15 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP6045285B2 (ja) 2011-10-24 2016-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI621185B (zh) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI581431B (zh) 2012-01-26 2017-05-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
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JP6749090B2 (ja) * 2015-11-12 2020-09-02 東京エレクトロン株式会社 ハロゲン系ガスを用いる処理装置における処理方法
US10957801B2 (en) * 2017-02-07 2021-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
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US11545580B2 (en) * 2017-11-15 2023-01-03 South China University Of Technology Metal oxide (MO semiconductor and thin-film transistor and application thereof
JP7366019B2 (ja) * 2017-12-14 2023-10-20 アプライド マテリアルズ インコーポレイテッド エッチング残留物の少ない金属酸化物のエッチング方法
JP7398860B2 (ja) * 2018-08-08 2023-12-15 株式会社ジャパンディスプレイ 薄膜トランジスタの製造方法
US12477837B2 (en) 2019-10-11 2025-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN110627506B (zh) * 2019-10-29 2022-06-17 哈尔滨理工大学 一种结合3D打印制备Cf/SiC晶舟的方法
JP7710994B2 (ja) 2019-12-27 2025-07-22 株式会社半導体エネルギー研究所 半導体装置
JP7418230B2 (ja) * 2020-02-03 2024-01-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7704505B2 (ja) * 2021-07-01 2025-07-08 東京エレクトロン株式会社 半導体デバイスの製造方法
CN115579405A (zh) * 2022-09-27 2023-01-06 山东大学 一种磁控溅射非晶氧化镓光电薄膜晶体管及其制备方法与应用
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