JP6041707B2 - ラッチ回路および半導体装置 - Google Patents

ラッチ回路および半導体装置 Download PDF

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Publication number
JP6041707B2
JP6041707B2 JP2013040364A JP2013040364A JP6041707B2 JP 6041707 B2 JP6041707 B2 JP 6041707B2 JP 2013040364 A JP2013040364 A JP 2013040364A JP 2013040364 A JP2013040364 A JP 2013040364A JP 6041707 B2 JP6041707 B2 JP 6041707B2
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Japan
Prior art keywords
transistor
film
insulating film
oxide semiconductor
inverter
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Expired - Fee Related
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JP2013040364A
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Japanese (ja)
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JP2013214958A (ja
JP2013214958A5 (enExample
Inventor
辰司 西島
辰司 西島
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2013214958A5 publication Critical patent/JP2013214958A5/ja
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/015—Modifications of generator to maintain energy constant

Landscapes

  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP2013040364A 2012-03-05 2013-03-01 ラッチ回路および半導体装置 Expired - Fee Related JP6041707B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013040364A JP6041707B2 (ja) 2012-03-05 2013-03-01 ラッチ回路および半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012048118 2012-03-05
JP2012048118 2012-03-05
JP2013040364A JP6041707B2 (ja) 2012-03-05 2013-03-01 ラッチ回路および半導体装置

Publications (3)

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JP2013214958A JP2013214958A (ja) 2013-10-17
JP2013214958A5 JP2013214958A5 (enExample) 2016-03-03
JP6041707B2 true JP6041707B2 (ja) 2016-12-14

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JP2013040364A Expired - Fee Related JP6041707B2 (ja) 2012-03-05 2013-03-01 ラッチ回路および半導体装置

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US (1) US8754693B2 (enExample)
JP (1) JP6041707B2 (enExample)

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JP6442321B2 (ja) * 2014-03-07 2018-12-19 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器
JP2016015475A (ja) 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
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JP2017201651A (ja) * 2016-05-02 2017-11-09 株式会社神戸製鋼所 酸化物半導体の製造方法
CN113660439A (zh) 2016-12-27 2021-11-16 株式会社半导体能源研究所 摄像装置及电子设备
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