JP6005117B2 - 近接場リソグラフィのためのマスクの製造方法 - Google Patents
近接場リソグラフィのためのマスクの製造方法 Download PDFInfo
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- JP6005117B2 JP6005117B2 JP2014208273A JP2014208273A JP6005117B2 JP 6005117 B2 JP6005117 B2 JP 6005117B2 JP 2014208273 A JP2014208273 A JP 2014208273A JP 2014208273 A JP2014208273 A JP 2014208273A JP 6005117 B2 JP6005117 B2 JP 6005117B2
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- cylinder
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- lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/92—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared from printing surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
Description
bottom)”、“前(front)”、“後(back)”、“先頭の(leading)”、“後端の(trailing)”、“上の(above)”、“下の(below)”等の方向を示す用語は、説明される図面の方向を示すために用いられる。本発明の実施形態の構成要素が多数の異なる方向に位置しうるため、方向を示す用語は、図示を目的に用いられ、それに制限されない。他の実施形態が用いられてもよく、本発明の範囲を逸脱しない範囲で構造的又は論理的な変化がなされてもよい。したがって、以下の詳細な説明は、限定的な意味で解釈されるべきではなく、また、本発明の範囲は、添付の特許請求の範囲によって定義される。
Claims (5)
- ナノパターンニングされた円筒状のフォトマスクを形成する方法であって、
フレキシブルな材料からなるマスター基板上にマスターパターンを形成する工程であって、前記マスターパターンは、大きさが1ナノメートルから100マイクロメートルの範囲の要素を含む、工程と、
透明な円筒体の表面上にUV硬化可能なエラストマー前駆体材料の層を形成する工程と、
マスターから前記円筒体の前記表面のエラストマー前駆体材料の前記層への前記マスターパターンの転写が、UV−ナノインプリントリソグラフィにより、光源から発せられるUV光で前記UV硬化可能なエラストマー前駆体が硬化させて行われる工程と、を含む方法。 - 前記マスターから前記円筒体の前記表面のエラストマー前駆体材料の前記層へ前記マスターパターンを転写する工程は、リソグラフィマスクとして前記マスターを用いるリソグラフィ処理の際に、前記円筒体を連続的に回転することを含む請求項1に記載の方法。
- 前記マスターから前記円筒体の前記表面のエラストマー前駆体材料の前記層へ前記マスターパターンを転写する工程は、リソグラフィ処理間でのその後の回転ステップ時に、円筒体の一つの部分でリソグラフィがなされる“ステップ−アンド−ローテート”モードを含む請求項1に記載の方法。
- 前記パターンは、大きさが10ナノメートルから1マイクロメートルの範囲の要素を含む請求項1に記載の方法。
- 前記パターンは、大きさが50ナノメートルから500ナノメートルの範囲の要素を含む請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40208510P | 2010-08-23 | 2010-08-23 | |
US61/402,085 | 2010-08-23 |
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JP2013525922A Division JP2014501934A (ja) | 2010-08-23 | 2011-07-25 | 近接場リソグラフィのためのマスク及びその製造方法 |
Publications (2)
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JP2015004994A JP2015004994A (ja) | 2015-01-08 |
JP6005117B2 true JP6005117B2 (ja) | 2016-10-12 |
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JP2013525922A Pending JP2014501934A (ja) | 2010-08-23 | 2011-07-25 | 近接場リソグラフィのためのマスク及びその製造方法 |
JP2014208273A Active JP6005117B2 (ja) | 2010-08-23 | 2014-10-09 | 近接場リソグラフィのためのマスクの製造方法 |
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JP2013525922A Pending JP2014501934A (ja) | 2010-08-23 | 2011-07-25 | 近接場リソグラフィのためのマスク及びその製造方法 |
Country Status (10)
Country | Link |
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US (1) | US9069244B2 (ja) |
EP (1) | EP2609467A4 (ja) |
JP (2) | JP2014501934A (ja) |
KR (1) | KR101520196B1 (ja) |
CN (1) | CN103097953A (ja) |
AU (1) | AU2011293834A1 (ja) |
CA (1) | CA2807639A1 (ja) |
RU (1) | RU2544280C2 (ja) |
TW (1) | TW201224642A (ja) |
WO (1) | WO2012027050A2 (ja) |
Cited By (1)
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TWI765276B (zh) * | 2020-06-12 | 2022-05-21 | 光群雷射科技股份有限公司 | 透鏡的轉印式製造方法及透鏡轉印層的製造方法 |
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RU2013112860A (ru) | 2014-09-27 |
JP2015004994A (ja) | 2015-01-08 |
AU2011293834A1 (en) | 2013-02-28 |
US20130224636A1 (en) | 2013-08-29 |
KR20130061720A (ko) | 2013-06-11 |
CA2807639A1 (en) | 2012-03-01 |
US9069244B2 (en) | 2015-06-30 |
KR101520196B1 (ko) | 2015-05-21 |
EP2609467A4 (en) | 2014-07-30 |
EP2609467A2 (en) | 2013-07-03 |
TW201224642A (en) | 2012-06-16 |
CN103097953A (zh) | 2013-05-08 |
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