JP5873755B2 - 半導体装置及び表示装置 - Google Patents

半導体装置及び表示装置 Download PDF

Info

Publication number
JP5873755B2
JP5873755B2 JP2012108073A JP2012108073A JP5873755B2 JP 5873755 B2 JP5873755 B2 JP 5873755B2 JP 2012108073 A JP2012108073 A JP 2012108073A JP 2012108073 A JP2012108073 A JP 2012108073A JP 5873755 B2 JP5873755 B2 JP 5873755B2
Authority
JP
Japan
Prior art keywords
transistor
wiring
signal
potential
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012108073A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012257211A (ja
JP2012257211A5 (ja
Inventor
敦司 梅崎
敦司 梅崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012108073A priority Critical patent/JP5873755B2/ja
Publication of JP2012257211A publication Critical patent/JP2012257211A/ja
Publication of JP2012257211A5 publication Critical patent/JP2012257211A5/ja
Application granted granted Critical
Publication of JP5873755B2 publication Critical patent/JP5873755B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0876—Supplementary capacities in pixels having special driving circuits and electrodes instead of being connected to common electrode or ground; Use of additional capacitively coupled compensation electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
    • G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of El Displays (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2012108073A 2011-05-13 2012-05-10 半導体装置及び表示装置 Active JP5873755B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012108073A JP5873755B2 (ja) 2011-05-13 2012-05-10 半導体装置及び表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011108133 2011-05-13
JP2011108133 2011-05-13
JP2012108073A JP5873755B2 (ja) 2011-05-13 2012-05-10 半導体装置及び表示装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2014104064A Division JP5745726B2 (ja) 2011-05-13 2014-05-20 半導体装置、表示モジュール及び電子機器
JP2016006930A Division JP2016129338A (ja) 2011-05-13 2016-01-18 半導体装置

Publications (3)

Publication Number Publication Date
JP2012257211A JP2012257211A (ja) 2012-12-27
JP2012257211A5 JP2012257211A5 (ja) 2015-06-11
JP5873755B2 true JP5873755B2 (ja) 2016-03-01

Family

ID=47141492

Family Applications (12)

Application Number Title Priority Date Filing Date
JP2012108073A Active JP5873755B2 (ja) 2011-05-13 2012-05-10 半導体装置及び表示装置
JP2014104064A Active JP5745726B2 (ja) 2011-05-13 2014-05-20 半導体装置、表示モジュール及び電子機器
JP2016006930A Withdrawn JP2016129338A (ja) 2011-05-13 2016-01-18 半導体装置
JP2017238199A Active JP6564836B2 (ja) 2011-05-13 2017-12-13 半導体装置
JP2019139035A Withdrawn JP2020004475A (ja) 2011-05-13 2019-07-29 半導体装置
JP2021033574A Withdrawn JP2021103882A (ja) 2011-05-13 2021-03-03 半導体装置
JP2022039045A Active JP7229404B2 (ja) 2011-05-13 2022-03-14 半導体装置
JP2023020819A Withdrawn JP2023071734A (ja) 2011-05-13 2023-02-14 半導体装置
JP2023212693A Active JP7466753B2 (ja) 2011-05-13 2023-12-18 半導体装置
JP2024059558A Withdrawn JP2024102052A (ja) 2011-05-13 2024-04-02 半導体装置
JP2024189633A Active JP7704951B2 (ja) 2011-05-13 2024-10-29 半導体装置
JP2025108550A Pending JP2025126301A (ja) 2011-05-13 2025-06-26 半導体装置

Family Applications After (11)

Application Number Title Priority Date Filing Date
JP2014104064A Active JP5745726B2 (ja) 2011-05-13 2014-05-20 半導体装置、表示モジュール及び電子機器
JP2016006930A Withdrawn JP2016129338A (ja) 2011-05-13 2016-01-18 半導体装置
JP2017238199A Active JP6564836B2 (ja) 2011-05-13 2017-12-13 半導体装置
JP2019139035A Withdrawn JP2020004475A (ja) 2011-05-13 2019-07-29 半導体装置
JP2021033574A Withdrawn JP2021103882A (ja) 2011-05-13 2021-03-03 半導体装置
JP2022039045A Active JP7229404B2 (ja) 2011-05-13 2022-03-14 半導体装置
JP2023020819A Withdrawn JP2023071734A (ja) 2011-05-13 2023-02-14 半導体装置
JP2023212693A Active JP7466753B2 (ja) 2011-05-13 2023-12-18 半導体装置
JP2024059558A Withdrawn JP2024102052A (ja) 2011-05-13 2024-04-02 半導体装置
JP2024189633A Active JP7704951B2 (ja) 2011-05-13 2024-10-29 半導体装置
JP2025108550A Pending JP2025126301A (ja) 2011-05-13 2025-06-26 半導体装置

Country Status (4)

Country Link
US (9) US8698551B2 (OSRAM)
JP (12) JP5873755B2 (OSRAM)
KR (10) KR101983976B1 (OSRAM)
TW (9) TWI562156B (OSRAM)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562156B (en) * 2011-05-13 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
US9742378B2 (en) 2012-06-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit and semiconductor device
US9070546B2 (en) 2012-09-07 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014137398A (ja) * 2013-01-15 2014-07-28 Sony Corp 表示装置、表示駆動装置、駆動方法、および電子機器
JP6068748B2 (ja) * 2013-03-13 2017-01-25 株式会社半導体エネルギー研究所 半導体装置
JP6475424B2 (ja) 2013-06-05 2019-02-27 株式会社半導体エネルギー研究所 半導体装置
KR102072214B1 (ko) * 2013-07-09 2020-02-03 삼성디스플레이 주식회사 주사 구동 장치 및 이를 포함하는 표시 장치
JP6097653B2 (ja) * 2013-08-05 2017-03-15 株式会社ジャパンディスプレイ 薄膜トランジスタ回路およびそれを用いた表示装置
WO2015097595A1 (en) * 2013-12-27 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW202603731A (zh) 2014-02-21 2026-01-16 日商半導體能源研究所股份有限公司 半導體裝置
TWI675004B (zh) * 2014-02-21 2019-10-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
US10199006B2 (en) 2014-04-24 2019-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
JP6521794B2 (ja) * 2014-09-03 2019-05-29 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US10068927B2 (en) * 2014-10-23 2018-09-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
CN104835475B (zh) * 2015-06-08 2017-03-29 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法、栅极驱动电路和显示装置
KR20170008375A (ko) * 2015-07-13 2017-01-24 에스케이하이닉스 주식회사 반도체 장치
KR102473306B1 (ko) * 2015-11-18 2022-12-05 삼성디스플레이 주식회사 표시 장치
CN105321491B (zh) * 2015-11-18 2017-11-17 武汉华星光电技术有限公司 栅极驱动电路和使用栅极驱动电路的液晶显示器
WO2018003931A1 (ja) * 2016-07-01 2018-01-04 シャープ株式会社 Ｔｆｔ回路およびシフトレジスタ回路
CN106205539A (zh) * 2016-08-31 2016-12-07 深圳市华星光电技术有限公司 一种双向扫描的栅极驱动电路、液晶显示面板
TWI606438B (zh) * 2017-02-16 2017-11-21 友達光電股份有限公司 移位暫存電路
WO2018163985A1 (ja) * 2017-03-10 2018-09-13 シャープ株式会社 走査線駆動回路およびこれを備えた表示装置
CN107785403B (zh) * 2017-10-30 2020-04-21 武汉天马微电子有限公司 一种显示面板及显示装置
TWI670703B (zh) 2018-06-15 2019-09-01 元太科技工業股份有限公司 畫素電路
CN109192140B (zh) 2018-09-27 2020-11-24 武汉华星光电半导体显示技术有限公司 像素驱动电路和显示装置
CN111445863B (zh) 2020-05-14 2021-09-14 京东方科技集团股份有限公司 一种像素驱动电路及其驱动方法、显示装置
KR102888510B1 (ko) * 2020-12-24 2025-11-20 엘지디스플레이 주식회사 레벨 쉬프터 및 표시 장치
KR102625976B1 (ko) * 2022-05-27 2024-01-16 숭실대학교 산학협력단 안정적으로 다중 주파수에서의 동작이 가능한 게이트 드라이버

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2851111C2 (de) * 1978-11-25 1980-09-25 Deutsche Itt Industries Gmbh, 7800 Freiburg Zweidimensionale Analog-Speicheranordnung
JPS6276878A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 映像スクランブル信号処理装置
US5412346A (en) * 1993-12-13 1995-05-02 At&T Corp. Variable gain voltage signal amplifier
US5701136A (en) * 1995-03-06 1997-12-23 Thomson Consumer Electronics S.A. Liquid crystal display driver with threshold voltage drift compensation
FR2743662B1 (fr) * 1996-01-11 1998-02-13 Thomson Lcd Perfectionnement aux registres a decalage utilisant des transistors mis de meme polarite
US5859630A (en) 1996-12-09 1999-01-12 Thomson Multimedia S.A. Bi-directional shift register
TW344131B (en) * 1997-06-03 1998-11-01 Nat Science Council A 1.5V bootstrapped all-N-logic true-single-phase CMOS dynamic logic circuit suitable for low supply voltage and high speed pipelined
JP3017133B2 (ja) 1997-06-26 2000-03-06 日本電気アイシーマイコンシステム株式会社 レベルシフタ回路
US6798452B1 (en) * 1997-07-28 2004-09-28 Matsushita Electric Industrial Co., Ltd. Amplifying solid-state imaging device, method for driving the same and physical quantity distribution sensing semiconductor device
TW469484B (en) 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
FR2820212A1 (fr) * 2001-01-30 2002-08-02 St Microelectronics Sa Circuit de detection de mauvaise connexion d'alimentation
JP4785271B2 (ja) * 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
JP4439761B2 (ja) * 2001-05-11 2010-03-24 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
US6366124B1 (en) * 2001-05-16 2002-04-02 Pericom Semiconductor Corp. BiDirectional active voltage translator with bootstrap switches for mixed-supply VLSI
JP4310939B2 (ja) * 2001-06-29 2009-08-12 カシオ計算機株式会社 シフトレジスタ及び電子装置
TW554558B (en) 2001-07-16 2003-09-21 Semiconductor Energy Lab Light emitting device
KR100403631B1 (ko) 2001-07-20 2003-10-30 삼성전자주식회사 비트라인 센스앰프 드라이버의 배치방법
TWI293444B (en) * 2002-04-08 2008-02-11 Samsung Electronics Co Ltd Liquid crystal display device
CN100428319C (zh) 2002-04-08 2008-10-22 三星电子株式会社 驱动电路及液晶显示器
CN100538486C (zh) 2002-12-25 2009-09-09 株式会社半导体能源研究所 液晶显示装置
KR100506005B1 (ko) 2002-12-31 2005-08-04 엘지.필립스 엘시디 주식회사 평판표시장치
JP4401801B2 (ja) * 2003-02-12 2010-01-20 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US7528643B2 (en) 2003-02-12 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device having the same, and driving method of the same
TWI228696B (en) 2003-03-21 2005-03-01 Ind Tech Res Inst Pixel circuit for active matrix OLED and driving method
US7329968B2 (en) * 2003-05-08 2008-02-12 The Trustees Of Columbia University In The City Of New York Charge-recycling voltage domains for energy-efficient low-voltage operation of digital CMOS circuits
GB0313041D0 (en) * 2003-06-06 2003-07-09 Koninkl Philips Electronics Nv Display device having current-driven pixels
JP2005005620A (ja) 2003-06-13 2005-01-06 Toyota Industries Corp スイッチトキャパシタ回路及びその半導体集積回路
JP4565815B2 (ja) 2003-06-27 2010-10-20 三洋電機株式会社 表示装置
US7368896B2 (en) * 2004-03-29 2008-05-06 Ricoh Company, Ltd. Voltage regulator with plural error amplifiers
KR101023726B1 (ko) 2004-03-31 2011-03-25 엘지디스플레이 주식회사 쉬프트 레지스터
WO2005104372A1 (en) * 2004-04-26 2005-11-03 Koninklijke Philips Electronics, N.V. Threshold voltage adjustment in thin film transistors
KR101057891B1 (ko) * 2004-05-31 2011-08-19 엘지디스플레이 주식회사 쉬프트 레지스터
KR20050121357A (ko) 2004-06-22 2005-12-27 삼성전자주식회사 쉬프트 레지스터와, 이를 갖는 스캔 구동 회로 및 표시 장치
GB0417132D0 (en) 2004-07-31 2004-09-01 Koninkl Philips Electronics Nv A shift register circuit
JP2006178165A (ja) 2004-12-22 2006-07-06 Alps Electric Co Ltd ドライバ回路、シフトレジスタ及び液晶駆動回路
KR101110133B1 (ko) 2004-12-28 2012-02-20 엘지디스플레이 주식회사 액정표시장치 게이트 구동용 쉬프트레지스터
JP4993544B2 (ja) 2005-03-30 2012-08-08 三菱電機株式会社 シフトレジスタ回路
JP4866623B2 (ja) 2005-06-03 2012-02-01 株式会社 日立ディスプレイズ 表示装置及びその制御方法
JP2007011139A (ja) 2005-07-01 2007-01-18 Toshiba Corp 液晶表示装置及びその製造方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
TW200735027A (en) 2006-01-05 2007-09-16 Mitsubishi Electric Corp Shift register and image display apparatus containing the same
JP5164383B2 (ja) * 2006-01-07 2013-03-21 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
KR101424794B1 (ko) * 2006-01-07 2014-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치와, 이 반도체장치를 구비한 표시장치 및전자기기
JP4912121B2 (ja) 2006-02-23 2012-04-11 三菱電機株式会社 シフトレジスタ回路
JP5069950B2 (ja) * 2006-06-02 2012-11-07 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
US7443202B2 (en) * 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI347577B (en) 2006-09-01 2011-08-21 Au Optronics Corp Shift register with low stress
JP4932415B2 (ja) * 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
JP5116277B2 (ja) 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
JP5090008B2 (ja) * 2007-02-07 2012-12-05 三菱電機株式会社 半導体装置およびシフトレジスタ回路
JP4912186B2 (ja) 2007-03-05 2012-04-11 三菱電機株式会社 シフトレジスタ回路およびそれを備える画像表示装置
JP2008251094A (ja) 2007-03-30 2008-10-16 Mitsubishi Electric Corp シフトレジスタ回路およびそれを備える画像表示装置
TWI337735B (en) 2007-05-18 2011-02-21 Au Optronics Corp Liquid crystal display and shift register with individual driving node
JP2009017076A (ja) * 2007-07-03 2009-01-22 Seiko Epson Corp バッファ回路及び表示装置
US20100188385A1 (en) 2007-07-24 2010-07-29 Koninklijke Philips Electronics N.V. Shift register circuit having threshold voltage compensation
US8269714B2 (en) 2007-09-12 2012-09-18 Sharp Kabushiki Kaisha Shift register
JP2009094927A (ja) * 2007-10-11 2009-04-30 Seiko Epson Corp バッファ、レベルシフト回路及び表示装置
JP5106186B2 (ja) 2008-03-13 2012-12-26 三菱電機株式会社 ドライバ回路
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
JP5245678B2 (ja) * 2008-09-24 2013-07-24 カシオ計算機株式会社 信号シフト装置、シフトレジスタ、電子機器及び信号シフト装置の駆動方法
KR101520807B1 (ko) * 2009-01-05 2015-05-18 삼성디스플레이 주식회사 게이트 구동회로 및 이를 갖는 표시장치
KR101022092B1 (ko) * 2009-01-12 2011-03-17 삼성모바일디스플레이주식회사 쉬프트 레지스터 및 이를 이용한 유기전계발광 표시장치
JP5484109B2 (ja) 2009-02-09 2014-05-07 三菱電機株式会社 電気光学装置
US8872751B2 (en) * 2009-03-26 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having interconnected transistors and electronic device including the same
KR101573460B1 (ko) 2009-04-30 2015-12-02 삼성디스플레이 주식회사 게이트 구동회로
JP5436049B2 (ja) * 2009-05-29 2014-03-05 三菱電機株式会社 シフトレジスタ回路、シフトレジスタ回路の設計方法及び半導体装置
TWI718565B (zh) 2009-09-10 2021-02-11 日商半導體能源研究所股份有限公司 半導體裝置和顯示裝置
CN102024410B (zh) 2009-09-16 2014-10-22 株式会社半导体能源研究所 半导体装置及电子设备
CN107195328B (zh) 2009-10-09 2020-11-10 株式会社半导体能源研究所 移位寄存器和显示装置以及其驱动方法
KR101721285B1 (ko) 2009-10-09 2017-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터 및 표시 장치
TWI465039B (zh) 2009-10-15 2014-12-11 Au Optronics Corp 移位暫存器電路
TWI562156B (en) * 2011-05-13 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
CN103345941B (zh) * 2013-07-03 2016-12-28 京东方科技集团股份有限公司 移位寄存器单元及驱动方法、移位寄存器电路及显示装置
TW202603731A (zh) * 2014-02-21 2026-01-16 日商半導體能源研究所股份有限公司 半導體裝置

Also Published As

Publication number Publication date
US20190088689A1 (en) 2019-03-21
TW202141508A (zh) 2021-11-01
TWI587306B (zh) 2017-06-11
JP2022091815A (ja) 2022-06-21
JP2012257211A (ja) 2012-12-27
US20170062491A1 (en) 2017-03-02
TW202242890A (zh) 2022-11-01
KR20170054360A (ko) 2017-05-17
US8698551B2 (en) 2014-04-15
US11682332B2 (en) 2023-06-20
TWI673718B (zh) 2019-10-01
KR20230025421A (ko) 2023-02-21
JP7704951B2 (ja) 2025-07-08
US20150325195A1 (en) 2015-11-12
TW201810287A (zh) 2018-03-16
JP2020004475A (ja) 2020-01-09
US9508301B2 (en) 2016-11-29
JP2014200093A (ja) 2014-10-23
KR102392242B1 (ko) 2022-05-02
JP6564836B2 (ja) 2019-08-21
US20140247070A1 (en) 2014-09-04
KR102221936B1 (ko) 2021-03-04
KR20210022607A (ko) 2021-03-03
KR102499477B1 (ko) 2023-02-16
TWI633556B (zh) 2018-08-21
US20250356786A1 (en) 2025-11-20
KR101852752B1 (ko) 2018-04-30
TWI562156B (en) 2016-12-11
KR101720509B1 (ko) 2017-03-28
JP2018088680A (ja) 2018-06-07
US20230274679A1 (en) 2023-08-31
TW201306037A (zh) 2013-02-01
US10559606B2 (en) 2020-02-11
KR101983976B1 (ko) 2019-05-30
KR20250153173A (ko) 2025-10-24
TW201709211A (zh) 2017-03-01
JP7229404B2 (ja) 2023-02-27
KR20190060736A (ko) 2019-06-03
TW201539460A (zh) 2015-10-16
JP2025010272A (ja) 2025-01-20
TWI717788B (zh) 2021-02-01
JP2023071734A (ja) 2023-05-23
TWI595495B (zh) 2017-08-11
KR20120127268A (ko) 2012-11-21
KR20240158211A (ko) 2024-11-04
TW201905929A (zh) 2019-02-01
KR102151397B1 (ko) 2020-09-04
KR20220054776A (ko) 2022-05-03
JP2021103882A (ja) 2021-07-15
US20220293029A1 (en) 2022-09-15
JP7466753B2 (ja) 2024-04-12
KR20200103604A (ko) 2020-09-02
US11295649B2 (en) 2022-04-05
JP2016129338A (ja) 2016-07-14
JP2024102052A (ja) 2024-07-30
JP2025126301A (ja) 2025-08-28
US12406605B2 (en) 2025-09-02
TW202514630A (zh) 2025-04-01
JP5745726B2 (ja) 2015-07-08
JP2024025827A (ja) 2024-02-26
US9106224B2 (en) 2015-08-11
US10062717B2 (en) 2018-08-28
US20120286855A1 (en) 2012-11-15
KR20150090006A (ko) 2015-08-05
TW202013383A (zh) 2020-04-01
US20200335532A1 (en) 2020-10-22

Similar Documents

Publication Publication Date Title
JP7466753B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150420

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151222

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160118

R150 Certificate of patent or registration of utility model

Ref document number: 5873755

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250