JP5801805B2 - オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 - Google Patents
オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 Download PDFInfo
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- JP5801805B2 JP5801805B2 JP2012523272A JP2012523272A JP5801805B2 JP 5801805 B2 JP5801805 B2 JP 5801805B2 JP 2012523272 A JP2012523272 A JP 2012523272A JP 2012523272 A JP2012523272 A JP 2012523272A JP 5801805 B2 JP5801805 B2 JP 5801805B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F
- H01L25/042—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass H10F the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/496—Luminescent members, e.g. fluorescent sheets
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009036621.0 | 2009-08-07 | ||
| DE102009036621.0A DE102009036621B4 (de) | 2009-08-07 | 2009-08-07 | Optoelektronisches Halbleiterbauteil |
| PCT/EP2010/060434 WO2011015449A1 (de) | 2009-08-07 | 2010-07-19 | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015168164A Division JP6073428B2 (ja) | 2009-08-07 | 2015-08-27 | オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013501368A JP2013501368A (ja) | 2013-01-10 |
| JP2013501368A5 JP2013501368A5 (enExample) | 2013-07-25 |
| JP5801805B2 true JP5801805B2 (ja) | 2015-10-28 |
Family
ID=43132999
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012523272A Active JP5801805B2 (ja) | 2009-08-07 | 2010-07-19 | オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 |
| JP2015168164A Active JP6073428B2 (ja) | 2009-08-07 | 2015-08-27 | オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015168164A Active JP6073428B2 (ja) | 2009-08-07 | 2015-08-27 | オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 |
Country Status (8)
| Country | Link |
|---|---|
| US (9) | US8723192B2 (enExample) |
| EP (1) | EP2462633B1 (enExample) |
| JP (2) | JP5801805B2 (enExample) |
| KR (3) | KR101895345B1 (enExample) |
| CN (2) | CN105826448B (enExample) |
| DE (1) | DE102009036621B4 (enExample) |
| TW (1) | TWI446593B (enExample) |
| WO (1) | WO2011015449A1 (enExample) |
Families Citing this family (95)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8556672B2 (en) | 2010-01-29 | 2013-10-15 | Citizen Electronics Co., Ltd. | Method of producing light-emitting device and light-emitting device |
| DE102010025319B4 (de) * | 2010-06-28 | 2022-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente |
| DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
| DE102011011139B4 (de) | 2011-02-14 | 2023-01-19 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements und optoelektronisches Halbleiterbauelement |
| DE102011013052A1 (de) * | 2011-03-04 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements |
| DE102011100728A1 (de) | 2011-05-06 | 2012-11-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
| DE102011102590A1 (de) * | 2011-05-27 | 2012-11-29 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Leuchtdioden-Bauelementen |
| DE102011078906A1 (de) * | 2011-07-11 | 2013-01-17 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines optoelektronischen halbleiterbauteils mittels spritzpressens |
| DE102011080458A1 (de) * | 2011-08-04 | 2013-02-07 | Osram Opto Semiconductors Gmbh | Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung |
| DE102012002605B9 (de) | 2012-02-13 | 2017-04-13 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| DE102012102847A1 (de) | 2012-04-02 | 2013-10-02 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements |
| DE102012212968A1 (de) | 2012-07-24 | 2014-01-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element |
| DE102012212963B4 (de) | 2012-07-24 | 2022-09-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| DE102012213343B4 (de) | 2012-07-30 | 2023-08-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | VERFAHREN ZUM HERSTELLEN EINES OPTOELEKTRONISCHES HALBLEITERBAUTEILs MIT SAPHIR-FLIP-CHIP |
| DE102012215524A1 (de) | 2012-08-31 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| DE102012109905B4 (de) | 2012-10-17 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen |
| DE102012113003A1 (de) * | 2012-12-21 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| DE102013100711B4 (de) | 2013-01-24 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl optoelektronischer Bauelemente |
| DE102013101260A1 (de) * | 2013-02-08 | 2014-08-14 | Osram Opto Semiconductors Gmbh | Vorrichtung mit zumindest einem optoelektronischen Halbleiterbauelement |
| DE102013202904A1 (de) | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung |
| DE102013202910A1 (de) | 2013-02-22 | 2014-09-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| DE102013202906A1 (de) | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
| DE102013202902B4 (de) | 2013-02-22 | 2021-06-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines optoelektronischen Bauelements |
| DE102013203350A1 (de) | 2013-02-28 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zu seiner Herstellung |
| DE102013102621A1 (de) | 2013-03-14 | 2014-09-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| DE102013103226A1 (de) | 2013-03-28 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
| DE102013206225A1 (de) | 2013-04-09 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| DE102013212247B4 (de) * | 2013-06-26 | 2021-10-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| DE102013106948A1 (de) * | 2013-07-02 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| DE102013213073A1 (de) * | 2013-07-04 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelementes |
| EP3044809B1 (en) | 2013-09-13 | 2019-04-24 | Lumileds Holding B.V. | Frame based package for flip-chip led |
| DE102013111496A1 (de) | 2013-10-18 | 2015-04-23 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
| DE102013222200A1 (de) | 2013-10-31 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements |
| DE102013223069A1 (de) * | 2013-11-13 | 2015-05-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| DE102013022642B3 (de) | 2013-11-14 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement |
| DE102013112549B4 (de) | 2013-11-14 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
| DE102013112886A1 (de) | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
| DE102013113185A1 (de) | 2013-11-28 | 2015-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils sowie optoelektronisches Halbleiterbauteil und optoelektronische Anordnung |
| WO2015078865A1 (de) * | 2013-11-28 | 2015-06-04 | Osram Opto Semiconductors Gmbh | Bauelementanordnung und verfahren zum herstellen einer bauelementanordnung |
| US20150287697A1 (en) | 2014-04-02 | 2015-10-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
| US9406650B2 (en) * | 2014-01-31 | 2016-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of packaging semiconductor devices and packaged semiconductor devices |
| DE102014102293A1 (de) * | 2014-02-21 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung optoelektronischer Halbleiterbauteile und optoelektronisches Halbleiterbauteil |
| DE102014103034A1 (de) * | 2014-03-07 | 2015-09-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| DE102014105188A1 (de) * | 2014-04-11 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Halbleiterchip, optoelektronisches Bauelement mit Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| DE102014105734A1 (de) * | 2014-04-23 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
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