WO2019042564A1 - Surface-mountable optoelectronic device and method for producing a surface-mountable optoelectronic device - Google Patents

Surface-mountable optoelectronic device and method for producing a surface-mountable optoelectronic device Download PDF

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Publication number
WO2019042564A1
WO2019042564A1 PCT/EP2017/071997 EP2017071997W WO2019042564A1 WO 2019042564 A1 WO2019042564 A1 WO 2019042564A1 EP 2017071997 W EP2017071997 W EP 2017071997W WO 2019042564 A1 WO2019042564 A1 WO 2019042564A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor chips
optoelectronic device
housing body
converter
housing
Prior art date
Application number
PCT/EP2017/071997
Other languages
French (fr)
Inventor
Teng Hai CHUAH
Seong Tak KOAY
Chui Wai CHONG
Adelene NG
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to PCT/EP2017/071997 priority Critical patent/WO2019042564A1/en
Publication of WO2019042564A1 publication Critical patent/WO2019042564A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • a surface-mountable optoelectronic device is provided.
  • One object to be achieved is to provide a compact
  • the surface-mountable optoelectronic device comprises two or more semiconductor chips. Each semiconductor chip is designed to emit radiation during its intended operation.
  • the semiconductor chips preferably each comprise a
  • the semiconductor layer sequence is, for example, based on a III-V-compound
  • the semiconductor material is, for example, a nitride compound semiconductor material, like Al n In ] __ n _ m Ga m N, or a phosphide compound semiconductor
  • the semiconductor layer sequence can comprise dopants as well as additional components. However, for the sake of simplicity, only the essential components of the crystal lattice of the semiconductor layer sequence, this means Al, As, Ga, In, N or P, are given. Preferably, the semiconductor layer sequence is based on AlInGaN.
  • the active layer of the semiconductor layer sequence in particular contains at least one pn junction and/or at least one quantum well structure and can, for example, generate electromagnetic radiation in the blue or green or red spectral range or in the UV range in the intended mode of operation.
  • Each semiconductor chip preferably comprises one, in particular exactly one, active layer.
  • the semiconductor chips of the optoelectronic device are preferably semiconductor chips of the same kind or of the same characteristics. Preferably the semiconductor chips are identical within the scope of the manufacturing tolerance.
  • a semiconductor chip is here and in the following to be understood as a separately operable and electrically
  • a semiconductor chip is formed in particular by being singled out from a wafer composite.
  • a semiconductor chip preferably comprises exactly one
  • the semiconductor layer sequence of the semiconductor chip is preferably designed to be contiguous.
  • the optoelectronic semiconductor chip comprises a contiguous or a segmented active layer.
  • the lateral extent of the semiconductor chip, measured parallel to the main direction of extension of the active layer, is, for example, at most 1 % or at most 5 % greater than the lateral extent of the active layer.
  • the semiconductor chips are for example volume emitters.
  • the semiconductor chips comprise, for example, the growth substrate of a semiconductor layer sequence, which might be a sapphire substrate.
  • the semiconductor chips are surfaces emitters, for example thin-film chips.
  • the growth substrate of the semiconductor layer sequence is preferably removed.
  • the semiconductor chips might be flip-chips, comprising all electrical contact elements for electrically connecting the semiconductor chip on a single contact side.
  • the surface-mountable optoelectronic device comprises a contiguous first housing body.
  • the first housing body is preferably based on a
  • the first housing body is made from an electrically
  • the first housing body can be a potting. Particularly preferably, the first housing body is formed from one single piece.
  • the contact elements are preferably metallic.
  • each contact element is preferably metallic.
  • semiconductor chip comprises exactly two contact elements, which are both located on the contact side.
  • the contact side is preferably a main extension side of the semiconductor chip.
  • the active layer preferably extends essentially parallel to the contact side. In the intended operation mode, preferably no or at most 10% of the radiation emitted by the semiconductor chip is emitted via the contact side .
  • the contact elements of the semiconductor chips form a part of a bottom side of the optoelectronic device when the optoelectronic device is in an unmounted configuration. In this case, the contact elements are freely accessible at the bottom side of the
  • all contact elements of all semiconductor chips are freely accessible at the bottom side.
  • the whole contact sides of the semiconductor chips form a part of the bottom side and are freely accessible at the bottom side.
  • An unmounted configuration of the optoelectronic device is a configuration in which the optoelectronic device is neither attached nor electrically connected nor soldered to a
  • connection carrier like a PCB-board.
  • the composite of the semiconductor chips and the first housing body can be self-supporting and in particular can be the only self-supporting component of the
  • the semiconductor chips reach down to the bottom side.
  • the distance between the bottom side of the optoelectronic device and the active layer of the semiconductor chips is at most 300 ym or at most 200 ym or at most 100 ym or at most 50 ym.
  • the bottom side of the optoelectronic device preferably forms a main extension side of the optoelectronic device.
  • the bottom side forms an outer surface of the optoelectronic device.
  • the bottom side of the optoelectronic device for example, essentially extends parallel to the contact sides of the semiconductor chips.
  • the semiconductor chips are molded into the first housing body such that the first housing body surrounds the semiconductor chips form-fittingly in a lateral direction.
  • the lateral direction is a direction parallel to a main extension level of the optoelectronic device.
  • the lateral direction is a direction parallel to the bottom side or to the contact sides.
  • the first housing body is in direct contact with the semiconductor chips, for example in direct contact with side surfaces of the semiconductor chips.
  • all the side surfaces of the semiconductor chips are in direct contact with the first housing body.
  • the first housing body is preferably arranged in between each pair of semiconductor chips. The first housing body can mechanically connect the semiconductor chips to each other.
  • emission sides of the semiconductor chips are not covered by the first housing body.
  • the first housing body terminates flush with the emission sides.
  • the emission sides of the semiconductor chips are preferably main extension sides of the semiconductor chips and run essentially parallel to the contact sides.
  • the side surfaces of the semiconductor chips preferably run crosswise or perpendicular to the emission sides and the contact sides and connect them to each other. In the intended operation mode of the semiconductor chips, for example at least 30 % or at least 50 % or at least 80 % of the radiation emitted by the semiconductor chips is emitted via the emission sides.
  • the fist housing body can partially cover the contact sides of the semiconductor chips.
  • the contact elements of the semiconductor chips are not covered by the first housing body, as they are freely accessible at the bottom side.
  • the bottom side of the optoelectronic device can be partially formed by the first housing body.
  • the whole bottom side of the optoelectronic device is solely formed by the contact elements or the contact sides of the
  • a side surface of the optoelectronic device is partially formed by the first housing body.
  • the side surface of the optoelectronic device is an outer surface of the optoelectronic device running crosswise or perpendicular to the bottom side of the
  • all side surfaces of the optoelectronic device are at least partially formed by the first housing body. In between the side surfaces of the semiconductor chips and the side surfaces of the
  • optoelectronic device preferably solely the first housing body is located.
  • the side surfaces of the optoelectronic device might have traces of a physical or chemical material removal .
  • the optoelectronic device comprises two or more semiconductor chips, wherein each semiconductor chip is designed to emit radiation during its intended operation.
  • the optoelectronic device further comprises a contiguous first housing body.
  • Each semiconductor chip comprises a contact side with contact elements for electrically contacting the semiconductor chip.
  • the contact elements of the semiconductor chips form a part of a bottom side of the optoelectronic device and are freely accessible at the bottom side of the optoelectronic device.
  • the semiconductor chips are molded into the first housing body such that the first housing body surrounds the
  • a side surface of the optoelectronic device is at least
  • each CSP comprising one single semiconductor chip and
  • the dimension of such an optoelectronic device is restricted to the sizes of the individual CSPs and the spacing between the CSPs.
  • the optoelectronic device of this invention is more compact. There is no need for a substrate between the semiconductor chips and the bottom side of the optoelectronic device.
  • the semiconductor chips can be covered with different converter elements in order to provide an optoelectronic device
  • this optoelectronic device is simple, cost-reduced and very flexible, for example concerning the color emitted by the optoelectronic device.
  • the distance between the semiconductor chips is constant as assembly variations with respect to the distance are avoided.
  • the optoelectronic device further comprises one or more converter elements.
  • the converter elements are designed in such a way that they convert the radiation emitted by the semiconductor chips into radiation of a different wavelength range. For each
  • the semiconductor chips emit blue or UV-light and the converter elements convert this light into yellow or red or green light.
  • the converter elements can be designed in such a way that they convert the light emitted by the semiconductor chips completely or only partially.
  • the converter elements are designed in such a way that the light leaving the converter elements is warm-white light or cold-white light.
  • the converter elements for example, comprise phosphor particles distributed in a matrix material, like silicone.
  • the converter elements might also be ceramic.
  • each converter element only covers the emission side of the corresponding
  • the converter elements preferably cover the whole emission side of the corresponding semiconductor chip.
  • the converter elements can be in direct contact with the emission sides of the semiconductor chips.
  • each converter element forms a part of a top side of the optoelectronic device.
  • the top side of the optoelectronic device is preferably an outer surface of the optoelectronic device.
  • the top side is, for example, a main extension side of the optoelectronic device and preferably runs parallel to the bottom side of the optoelectronic device.
  • the top side and the bottom side of optoelectronic device are, for example, connected by the side surfaces of the optoelectronic device.
  • the first housing body is opaque to the light emitted by the semiconductor chips.
  • the first housing body is also opaque to the radiation into which the converter elements convert the radiation of the semiconductor chips.
  • the first housing body is reflective or absorbent for the
  • the optoelectronic device comprises a second housing body located on top of the first housing body.
  • the second housing body is different from the first housing body.
  • the second housing body is preferably contiguous and formed from one single piece.
  • the second housing body is translucent or transparent to the radiation emitted by the semiconductor chips and/or to the radiation to which the radiation of the semiconductor chips is converted by the converter elements.
  • the second housing body forms a part of the top side of the optoelectronic device.
  • the top side of the optoelectronic device is solely formed by the second housing body and the converter elements.
  • the second housing body and the converter elements terminate flush with each other at the top side of the optoelectronic device.
  • the second housing body can partially form the side surfaces of the optoelectronic device.
  • the side surfaces of the optoelectronic device are, for example, solely formed by the first housing body and the second housing body.
  • each converter element is molded into the second housing body such that the second housing body surrounds the converter elements form-fittingly in the lateral direction.
  • the side surfaces of converter elements running crosswise or perpendicular to the lateral direction, are partially or completely covered with the second housing body. Some or all of the side surfaces of the converter elements may be in direct contact with the second housing body.
  • the optoelectronic device comprises a first converter element and a second converter element, which are different from each other such that the first converter element and the second converter element convert the radiation, emitted by the semiconductor chips, to a radiation of different wavelength ranges.
  • the first converter element and the second converter element convert the radiation, emitted by the semiconductor chips, to a radiation of different wavelength ranges.
  • the converter element comprise different phosphor materials.
  • the first and the second converter element can be designed as the converter elements specified above.
  • the first converter element is designed to create warm-white light and the second converter element is designed to create cold-white light .
  • the first and the second converter element can comprise different phosphors and/or might have different thicknesses.
  • the optoelectronic device is a Chip Scale Package (CSP) .
  • CSP Chip Scale Package
  • the lateral extent and/or the volume of the whole optoelectronic device is essentially determined by the lateral extent or the volume of the semiconductor chips.
  • the area of the bottom side of the optoelectronic device is at most 1.3- times or at most 1.2-times or at most 1.1-times larger than the sum of the areas of the contact sides of all
  • the volume of the optoelectronic device is for example at most 1.5-times or at most 1.4-times or at most 1.3-times or at most 1.2- times larger than the sum of the volumes of all semiconductor chips of the optoelectronic device.
  • the distance between two neighboring semiconductor chips amounts to at most 20 ⁇ 6 , or at most 10 %, or at most 5 %, or at most 2% of the lateral extent of the whole optoelectronic device.
  • the space between two neighboring semiconductor chips is mainly, for example, to at least 80 %, or to at least 95 %, or to at least 99 %, formed by the first housing body.
  • the first housing body comprises T1O2 ⁇
  • the first housing body is formed by a matrix material, in which T1O2 particles are
  • the matrix material might be a silicone or an epoxy or a resin.
  • the second housing body is a clear silicone.
  • a method for producing a surface-mountable optoelectronic device is provided.
  • the optoelectronic device according to the embodiments indicated above is produced with this method.
  • features of the method are also disclosed for the optoelectronic device and vice versa.
  • the method for producing a surface-mountable optoelectronic device comprises a step A) in which a plurality of individual semiconductor chips is attached onto an intermediate carrier.
  • Each semiconductor chip comprises a contact side with contact elements and an emission side opposite to the contact side, wherein the semiconductor chips are attached with the contact sides facing the intermediate carrier.
  • the emission sides face away from the intermediate carrier.
  • the intermediate carrier is for example a metal or glass substrate.
  • the intermediate carrier is self- supporting.
  • An adhesive film like a silicone film or a thermoplastic film or a thermo-release tape, might be placed on top of the intermediate carrier. The adhesive film might help to temporarily fix the semiconductor chips on the intermediate carrier.
  • the method comprises a step B) in which the semiconductor chips are molded with a first housing material such that regions between the
  • the first housing material preferably terminates flush with the emission sides of the semiconductor chips .
  • the method comprises a step C) in which a photoresist layer is applied on the semiconductor chips and on the first housing material.
  • the photoresist layer is a contiguous layer covering a plurality or all of the semiconductor chips and the first housing material in between the semiconductor chips.
  • the photoresist layer might be formed by a positive or a negative photoresist material.
  • the method comprises a step D) , in which the photoresist layer is structured such that first holes are formed in the regions of first
  • the produced first holes preferably completely penetrate the photoresist layer so that the emission sides of the first semiconductor chips are exposed in the regions of the holes.
  • the first semiconductor chips can be all of the semiconductor chips or only a part of the semiconductor chips on the intermediate carrier.
  • the method comprises a step E) , in which a first converter material is applied in the first holes such that first converter elements are produced, which cover the emission sides of the corresponding first semiconductor chips.
  • the first converter elements can, for example, be formed by curing the first converter
  • the method comprises a step F) , in which the first housing material is cut in the regions between at least some of the semiconductor chips.
  • the layer of the first housing material is
  • This step is preferably completely cut through in the vertical direction, perpendicular to the lateral direction. This step is
  • the method comprises a step G) , in which the intermediate carrier is detached.
  • step G) individual optoelectronic devices are obtained, wherein each optoelectronic device comprises a semiconductor chip and a first housing body made of the first housing material, said first housing body surrounds the semiconductor chip form-fittingly in the lateral direction.
  • the contact elements of the semiconductor chip are freely accessible at a bottom side of the optoelectronic device.
  • the steps A) to E) are performed as individual steps and in the indicated order.
  • the steps F) and G) are performed after step E) .
  • the order of the steps F) and G) might be as indicated or vice-versa.
  • the method comprises a step Dl), which is carried out of the step E) .
  • step Dl) the photoresist layer is structured again such that second holes are formed in the regions of second semiconductor chips, which are different from the first semiconductor chips. Structuring the photoresist layer a second time can be done with the same methods as specified above.
  • the method comprises a step El), which is performed after step Dl), and in which a second converter material is applied in the second holes such that second converter elements are produced in the second holes.
  • the second converter elements cover the emission surfaces of the corresponding second semiconductor chips.
  • the second holes are preferably formed such that the emission surfaces of the corresponding second semiconductor chips are exposed.
  • the second converter material might be cured in order to form the second converter elements.
  • the semiconductor chips are either covered by a first converter element or by a second converter element.
  • the steps Dl) and El) are preferably performed before the steps F) and G) .
  • the first and second holes are preferably formed such that the complete emission sides of the corresponding
  • the area of the holes when viewed in a top view, is at most 1.1-times or at most 1.05-times or at most 1.01-times larger than the area of the emission sides. This means that the holes are formed to be essentially as large as the emission sides.
  • the regions between the semiconductor chips keep covered with the photoresist layer during the step E) and preferably also during the step El) .
  • the method comprises a step E2), which is carried out after the step E) and
  • the photoresist layer is removed from the regions between the semiconductor chips such that in these regions the first housing material is exposed.
  • the method comprises a step E3) , carried out after step E2), in which the exposed housing material in the regions between the semiconductor chips is covered with a second housing material.
  • the first converter material and/or the second converter material and/or the second housing material might for example be applied with a screen-printing process.
  • the steps D) , E) , Dl), El), E2), E3) are preferably performed in the indicated order and before the steps F) and G) .
  • the second housing material is applied such that the second housing material terminates flush with the first converter elements and preferably also with the second converter elements in a direction away from the intermediate carrier.
  • the first housing material comprises T1O2 ⁇
  • the second housing material is a clear silicone.
  • the first housing material is cut in step F) in such a way that each produced optoelectronic device comprises at least two semiconductor chips. The at least two semiconductor chips of one
  • optoelectronic device are mechanically connected to each other via the first housing material.
  • the semiconductor chips are molded with the first housing material in step B) such that the first housing material terminates flush with the emission sides of the semiconductor chips.
  • Figures 2A to 7B different exemplary embodiments of a surface-mountable optoelectronic device in a cross-sectional view and a top view.
  • Figure 1A a first position of an exemplary embodiment of the method for producing a surface-mountable optoelectronic device is shown.
  • a plurality of semiconductor chips 1A, IB is attached to an intermediate carrier 6.
  • An adhesive film 60 is applied on top of the intermediate carrier 6.
  • semiconductor chips 1A, IB are attached to this adhesive film 60, which temporarily fixes the semiconductor chips 1A, IB to the intermediate carrier 6.
  • the semiconductor chips 1A, IB are for example flip-chips, which each comprise a contact side 11 with two contact elements 15 for electrically connecting the semiconductor chips 1A, IB.
  • a side opposite to the contact side 11 is an emission side 13 of the semiconductor chips 1A, IB.
  • the emission side 13 and the contact side 11 form main extension sides of the semiconductor chips 1A, IB.
  • FIG. IB a position of the method is shown in which the semiconductor chips 1A, IB are casted or potted with a first housing material 20.
  • the first housing material 20 for example, comprises T1O2 particles distributed in a matrix material like a silicone or a resin or an epoxy. Regions 8 in-between the semiconductor chips 1A, IB are filled such that the first housing material 20 surrounds the
  • FIG. 1C a position of the method is shown in which a photoresist layer 7 is applied on top of the semiconductor chips 1A, IB.
  • the photoresist layer 7 is contiguous and covers a plurality of semiconductor chips 1A, IB.
  • Figure ID illustrates a position of the method in which the photoresist layer 7 is structured in the regions of first semiconductor chips 1A.
  • the photoresist layer 7 is irradiated in the region of the first
  • Figure IE shows the result after structuring the photoresist layer 7 and after removing the remaining solvable regions of the photoresist layer 7.
  • the structuring of the photoresist layer 7 results in first holes 71 in the regions of the first semiconductor chips 1A. In the regions of the first holes 71 the emission sides 13 of the first semiconductor chips 1A are exposed. The sizes of the first holes 71 correspond to the areas of the emission sides 13.
  • a position of the method is shown in which a first converter material 40 is applied in the region of the first holes 71 such that the emission sides 13 of the first semiconductor chips 1A are covered with the first converter material 40.
  • the first converter material 40 is for example applied with help of a screen-printing process.
  • the first converter material 40 might be chosen in such a way that radiation, emitted by the first semiconductor chips 1A, for example blue light, is partially converted such that the light leaving the first converter material 40 is warm-white light .
  • first converter elements 4 are produced, wherein each first converter element 4 is associated to a first semiconductor chip 1A on a one-to-one basis.
  • Figure 1G shows a position of the method in which the
  • photoresist layer is irradiated again but this time in the region of second semiconductor chips IB, being different from the first semiconductor chips 1A.
  • FIG. 1H illustrates the result after structuring the photoresist layer 7 for the second time.
  • Second holes 72 are produced in the regions of the second semiconductor chips IB so that the emission sides 13 of the second semiconductor chips IB are exposed in the regions of the second holes 72.
  • the size of the second holes 72 is again essentially
  • a second converter material 50 is applied in the regions of the second holes 72 such that the emission sides 13 of the second semiconductor chips IB are covered with the second converter material 50.
  • the second converter material 50 is, for example, chosen such that the light emitted by the second semiconductor chips IB, which for example is again blue light, is partially converted such that cold-white light leaves the second converter material 50.
  • the first converter material 40 and the second converter material 50 can be cured in a common step in order to produce first converter elements 4 and second converter elements 5, each of the converter elements 4, 5 being associated to exactly one semiconductor chip 1A, IB.
  • Figure 1J a position is shown in which the rest of the photoresist layer 7, which was still covering the first housing material 20 in the region 8 between neighboring semiconductor chips 1A, IB, is removed.
  • a position is shown in which a second housing material 30 is applied to the first housing material 20 in the regions 8 between neighboring semiconductor chips 1A, IB.
  • the second housing material 30 is, for example, a clear silicone.
  • the second housing material 30 is applied in such a way that the converter elements 4, 5 are laterally surrounded form-fittingly by the second housing material 30 and such that the converter elements 4, 5 and the second housing material 30 terminate flush with each other in a direction away from the intermediate carrier 6.
  • the optoelectronic devices 100 are obtained.
  • the first housing material 20 and the second housing material 30 have been cut in those regions such that each of the obtained
  • optoelectronic devices 100 comprises at least two
  • the contact elements 15 of the semiconductor chips 1A, IB form a part of a bottom side 101 of the optoelectronic devices 100. Furthermore, each
  • optoelectronic device 100 comprises a part of the first housing material 40, forming a first housing body 4, which laterally surrounds the semiconductor chips 1A, IB, and a part of the second housing material 50, forming a second housing body 5, which laterally surrounds the converter elements 4, 5.
  • Figure 2A shows a cross-sectional view of an exemplary embodiment of the surface-mountable optoelectronic device 100.
  • the optoelectronic device 100 shown in Figure 2A is one of the optoelectronic devices 100 produced in Figure 1M.
  • the optoelectronic device 100 comprises a top side 103 and a bottom side 101 which both form main extension sides of the optoelectronic device 100.
  • the side surfaces 102 running crosswise to the bottom side 101 and the top side 103, connect the top side 103 and the bottom side 101 to each other.
  • the side surfaces 102 are completely formed by the first housing body 2 and the second housing body 3.
  • the top side 103 is completely formed by the second housing body 3 and the converter elements 4, 5.
  • the bottom side 101 is completely formed by the first housing body 2 and the contact elements 15 of the semiconductor chips 1A, IB.
  • the optoelectronic device of Figure 2A is a Chip Scale
  • CSP Chip Package
  • Figure 2B shows a top view on the top side 103 of the
  • the optoelectronic device 100 comprises exactly two semiconductor chips 1A, IB, wherein the first semiconductor chip 1A is covered with the first
  • FIG. 3A shows an exemplary embodiment of an optoelectronic device 100, which comprises only one semiconductor chip 1A and the corresponding converter element 4. To obtain such an optoelectronic device 100, the housing material 40 has to be cut in appropriate regions when producing the optoelectronic devices 100.
  • FIG. 3A shows a cross-sectional view of an optoelectronic device 100 where both semiconductor chips 1A, IB are covered with first converter elements 4 of the same type.
  • Figure 4B shows a top view on top of the top side 103 of the optoelectronic device 100 of figure 4A.
  • Figures 5A and 5B show an optoelectronic device 100 in a cross-section view and a top view, wherein the optoelectronic device 100 comprises four semiconductor chips 1A, IB, each of the semiconductor chips 1A, IB being covered with its own converter element 4.
  • the converter elements 4 are all of the same type.
  • Figures 6A and 6B show an optoelectronic device 100, which again comprises four semiconductor chips 1A, IB. However, in this case, two first semiconductor chips 1A are each covered with a first converter element 4 and two second semiconductor chips IB are each covered with a second converter element 5.
  • the first converter elements 4 are arranged next to each other and so are the second converter elements 5.
  • the first converter elements 4 comprise, for example, a different phosphor than the second converter elements 5.
  • the optoelectronic device 100 of Figure 7A and 7B differs from that of Figure 6A and 6B only by the feature that now the first converter elements 4 are arranged diagonally opposite to each other and so are the second converter elements 5.

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Abstract

A surface-mountable optoelectronic device (100) comprises two or more semiconductor chips (1A, 1B), wherein each semiconductor chip is designed to emit radiation during its intended operation. The optoelectronic device further comprises a contiguous first housing body (2). Each semiconductor chip comprises a contact side (11) with contact elements (15) for electrically contacting the semiconductor chip. In an unmounted configuration of the optoelectronic device the contact elements of the semiconductor chips form a part of a bottom side (101) of the optoelectronic device and are freely accessible at the bottom side of the optoelectronic device. The semiconductor chips are molded into the first housing body such that the first housing body surrounds the semiconductor chips form-fittingly in a lateral direction. A side surface (102) of the optoelectronic device is at least partially formed by the first housing body.

Description

Description
Surface-mountable optoelectronic device and method for producing a surface-mountable optoelectronic device
A surface-mountable optoelectronic device is provided.
Furthermore, a method for producing a surface-mountable optoelectronic device is provided. One object to be achieved is to provide a compact
optoelectronic device with a high color uniformity. A further object to be achieved is to provide a method for producing such an optoelectronic device. These objects are solved, inter alia, by the subject-matter and the method of the independent claims. Advantageous embodiments and further developments are the subject-matter of the dependent claims. According to at least one embodiment, the surface-mountable optoelectronic device comprises two or more semiconductor chips. Each semiconductor chip is designed to emit radiation during its intended operation. The semiconductor chips preferably each comprise a
semiconductor layer sequence and an active layer for
producing electromagnetic radiation. The semiconductor layer sequence is, for example, based on a III-V-compound
semiconductor material. The semiconductor material is, for example, a nitride compound semiconductor material, like AlnIn]__n_mGamN, or a phosphide compound semiconductor
material, like AlnIn]__n_mGamP, or an arsenide compound semiconductor material, like AlnIn]__n_mGamAs or AlnIn]__n_ mGamAsP, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and m + n ≤ 1,
respectively. The semiconductor layer sequence can comprise dopants as well as additional components. However, for the sake of simplicity, only the essential components of the crystal lattice of the semiconductor layer sequence, this means Al, As, Ga, In, N or P, are given. Preferably, the semiconductor layer sequence is based on AlInGaN.
The active layer of the semiconductor layer sequence in particular contains at least one pn junction and/or at least one quantum well structure and can, for example, generate electromagnetic radiation in the blue or green or red spectral range or in the UV range in the intended mode of operation. Each semiconductor chip preferably comprises one, in particular exactly one, active layer.
The semiconductor chips of the optoelectronic device are preferably semiconductor chips of the same kind or of the same characteristics. Preferably the semiconductor chips are identical within the scope of the manufacturing tolerance.
A semiconductor chip is here and in the following to be understood as a separately operable and electrically
contactable element. A semiconductor chip is formed in particular by being singled out from a wafer composite. A semiconductor chip preferably comprises exactly one
originally contiguous region of the semiconductor layer sequence grown in the wafer composite. The semiconductor layer sequence of the semiconductor chip is preferably designed to be contiguous. The optoelectronic semiconductor chip comprises a contiguous or a segmented active layer. The lateral extent of the semiconductor chip, measured parallel to the main direction of extension of the active layer, is, for example, at most 1 % or at most 5 % greater than the lateral extent of the active layer.
The semiconductor chips are for example volume emitters. In this case, the semiconductor chips comprise, for example, the growth substrate of a semiconductor layer sequence, which might be a sapphire substrate. However, it is also possible that the semiconductor chips are surfaces emitters, for example thin-film chips. In this case the growth substrate of the semiconductor layer sequence is preferably removed. The semiconductor chips might be flip-chips, comprising all electrical contact elements for electrically connecting the semiconductor chip on a single contact side. According to at least one embodiment the surface-mountable optoelectronic device comprises a contiguous first housing body. The first housing body is preferably based on a
silicone or an epoxy or a resin or a plastic. In particular, the first housing body is made from an electrically
insulating material. The first housing body can be a potting. Particularly preferably, the first housing body is formed from one single piece.
According to at least one embodiment each semiconductor chip comprises a contact side with contact elements for
electrically contacting the semiconductor chip. The contact elements are preferably metallic. For example, each
semiconductor chip comprises exactly two contact elements, which are both located on the contact side.
The contact side is preferably a main extension side of the semiconductor chip. The active layer preferably extends essentially parallel to the contact side. In the intended operation mode, preferably no or at most 10% of the radiation emitted by the semiconductor chip is emitted via the contact side . According to at least one embodiment the contact elements of the semiconductor chips form a part of a bottom side of the optoelectronic device when the optoelectronic device is in an unmounted configuration. In this case, the contact elements are freely accessible at the bottom side of the
optoelectronic device. Preferably all contact elements of all semiconductor chips are freely accessible at the bottom side. Particularly preferably the whole contact sides of the semiconductor chips form a part of the bottom side and are freely accessible at the bottom side.
An unmounted configuration of the optoelectronic device is a configuration in which the optoelectronic device is neither attached nor electrically connected nor soldered to a
connection carrier like a PCB-board.
In other words, there is no substrate or carrier between the semiconductor chips and the bottom side of the optoelectronic device. The composite of the semiconductor chips and the first housing body can be self-supporting and in particular can be the only self-supporting component of the
optoelectronic device. The semiconductor chips reach down to the bottom side. For example, the distance between the bottom side of the optoelectronic device and the active layer of the semiconductor chips is at most 300 ym or at most 200 ym or at most 100 ym or at most 50 ym.
The bottom side of the optoelectronic device preferably forms a main extension side of the optoelectronic device. The bottom side forms an outer surface of the optoelectronic device. The bottom side of the optoelectronic device, for example, essentially extends parallel to the contact sides of the semiconductor chips.
According to at least one embodiment the semiconductor chips are molded into the first housing body such that the first housing body surrounds the semiconductor chips form-fittingly in a lateral direction. The lateral direction is a direction parallel to a main extension level of the optoelectronic device. For example, the lateral direction is a direction parallel to the bottom side or to the contact sides.
Preferably, the first housing body is in direct contact with the semiconductor chips, for example in direct contact with side surfaces of the semiconductor chips. For example, all the side surfaces of the semiconductor chips are in direct contact with the first housing body. The first housing body is preferably arranged in between each pair of semiconductor chips. The first housing body can mechanically connect the semiconductor chips to each other.
Preferably, emission sides of the semiconductor chips, which are located opposite to the contact sides, are not covered by the first housing body. For example, the first housing body terminates flush with the emission sides. The emission sides of the semiconductor chips are preferably main extension sides of the semiconductor chips and run essentially parallel to the contact sides. The side surfaces of the semiconductor chips preferably run crosswise or perpendicular to the emission sides and the contact sides and connect them to each other. In the intended operation mode of the semiconductor chips, for example at least 30 % or at least 50 % or at least 80 % of the radiation emitted by the semiconductor chips is emitted via the emission sides.
The fist housing body can partially cover the contact sides of the semiconductor chips. The contact elements of the semiconductor chips are not covered by the first housing body, as they are freely accessible at the bottom side.
The bottom side of the optoelectronic device can be partially formed by the first housing body. For example, the whole bottom side of the optoelectronic device is solely formed by the contact elements or the contact sides of the
semiconductor chips and the first housing body. According to at least one embodiment a side surface of the optoelectronic device is partially formed by the first housing body. The side surface of the optoelectronic device is an outer surface of the optoelectronic device running crosswise or perpendicular to the bottom side of the
optoelectronic device. For example, all side surfaces of the optoelectronic device are at least partially formed by the first housing body. In between the side surfaces of the semiconductor chips and the side surfaces of the
optoelectronic device preferably solely the first housing body is located. The side surfaces of the optoelectronic device might have traces of a physical or chemical material removal .
In at least one embodiment the surface-mountable
optoelectronic device comprises two or more semiconductor chips, wherein each semiconductor chip is designed to emit radiation during its intended operation. The optoelectronic device further comprises a contiguous first housing body. Each semiconductor chip comprises a contact side with contact elements for electrically contacting the semiconductor chip. In an unmounted configuration of the optoelectronic device the contact elements of the semiconductor chips form a part of a bottom side of the optoelectronic device and are freely accessible at the bottom side of the optoelectronic device. The semiconductor chips are molded into the first housing body such that the first housing body surrounds the
semiconductor chips form-fittingly in a lateral direction. A side surface of the optoelectronic device is at least
partially formed by the first housing body.
In today's market, individual CSPs (Chips Scale Package), each CSP comprising one single semiconductor chip and
emitting different colors, are mounted on a substrate to create dual color optoelectronic devices. The dimension of such an optoelectronic device is restricted to the sizes of the individual CSPs and the spacing between the CSPs. The optoelectronic device of this invention is more compact. There is no need for a substrate between the semiconductor chips and the bottom side of the optoelectronic device. The semiconductor chips can be covered with different converter elements in order to provide an optoelectronic device
emitting different colored light. The production of this optoelectronic device is simple, cost-reduced and very flexible, for example concerning the color emitted by the optoelectronic device. The distance between the semiconductor chips is constant as assembly variations with respect to the distance are avoided. The color uniformity of the
optoelectronic device is improved compared to known
optoelectronic devices. According to at least one embodiment the optoelectronic device further comprises one or more converter elements. The converter elements are designed in such a way that they convert the radiation emitted by the semiconductor chips into radiation of a different wavelength range. For each
semiconductor chip a separate converter element might be provided. For example, the semiconductor chips emit blue or UV-light and the converter elements convert this light into yellow or red or green light. The converter elements can be designed in such a way that they convert the light emitted by the semiconductor chips completely or only partially. For example, the converter elements are designed in such a way that the light leaving the converter elements is warm-white light or cold-white light.
The converter elements, for example, comprise phosphor particles distributed in a matrix material, like silicone. The converter elements might also be ceramic.
According to at least one embodiment each converter element is associated to a semiconductor chip on a one-to-one basis and placed on an emission side of the corresponding
semiconductor chip. The emission sides are located opposite to the contact sides. For example, each converter element only covers the emission side of the corresponding
semiconductor chip and does not reach the emission side of a neighboring semiconductor chip. The converter elements preferably cover the whole emission side of the corresponding semiconductor chip. The converter elements can be in direct contact with the emission sides of the semiconductor chips.
According to at least one embodiment each converter element forms a part of a top side of the optoelectronic device. The top side of the optoelectronic device is preferably an outer surface of the optoelectronic device. The top side is, for example, a main extension side of the optoelectronic device and preferably runs parallel to the bottom side of the optoelectronic device. The top side and the bottom side of optoelectronic device are, for example, connected by the side surfaces of the optoelectronic device.
According to at least one embodiment the first housing body is opaque to the light emitted by the semiconductor chips.
Particularly preferably the first housing body is also opaque to the radiation into which the converter elements convert the radiation of the semiconductor chips. For example, the first housing body is reflective or absorbent for the
radiation.
According to at least one embodiment the optoelectronic device comprises a second housing body located on top of the first housing body. The second housing body is different from the first housing body. The second housing body is preferably contiguous and formed from one single piece. Preferably the second housing body is translucent or transparent to the radiation emitted by the semiconductor chips and/or to the radiation to which the radiation of the semiconductor chips is converted by the converter elements.
According to at least one embodiment the second housing body forms a part of the top side of the optoelectronic device. For example, the top side of the optoelectronic device is solely formed by the second housing body and the converter elements. For example, the second housing body and the converter elements terminate flush with each other at the top side of the optoelectronic device. The second housing body can partially form the side surfaces of the optoelectronic device. The side surfaces of the optoelectronic device are, for example, solely formed by the first housing body and the second housing body.
According to at least one embodiment each converter element is molded into the second housing body such that the second housing body surrounds the converter elements form-fittingly in the lateral direction. For example, the side surfaces of converter elements, running crosswise or perpendicular to the lateral direction, are partially or completely covered with the second housing body. Some or all of the side surfaces of the converter elements may be in direct contact with the second housing body.
According to at least one embodiment the optoelectronic device comprises a first converter element and a second converter element, which are different from each other such that the first converter element and the second converter element convert the radiation, emitted by the semiconductor chips, to a radiation of different wavelength ranges. This means that the first converter element and the second
converter element comprise different phosphor materials. The first and the second converter element can be designed as the converter elements specified above. For example, the first converter element is designed to create warm-white light and the second converter element is designed to create cold-white light . The first and the second converter element can comprise different phosphors and/or might have different thicknesses. According to at least one embodiment the optoelectronic device is a Chip Scale Package (CSP) . This means that the lateral extent and/or the volume of the whole optoelectronic device is essentially determined by the lateral extent or the volume of the semiconductor chips. For example, the area of the bottom side of the optoelectronic device is at most 1.3- times or at most 1.2-times or at most 1.1-times larger than the sum of the areas of the contact sides of all
semiconductor chips of the optoelectronic device. The volume of the optoelectronic device is for example at most 1.5-times or at most 1.4-times or at most 1.3-times or at most 1.2- times larger than the sum of the volumes of all semiconductor chips of the optoelectronic device. According to at least one embodiment the distance between two neighboring semiconductor chips amounts to at most 20 ~6 , or at most 10 %, or at most 5 %, or at most 2% of the lateral extent of the whole optoelectronic device. For example, the space between two neighboring semiconductor chips is mainly, for example, to at least 80 %, or to at least 95 %, or to at least 99 %, formed by the first housing body.
According to at least one embodiment the first housing body comprises T1O2 · For example the first housing body is formed by a matrix material, in which T1O2 particles are
distributed. The matrix material might be a silicone or an epoxy or a resin.
According to at least one embodiment the second housing body is a clear silicone.
Furthermore, a method for producing a surface-mountable optoelectronic device is provided. For example the optoelectronic device according to the embodiments indicated above is produced with this method. Thus, features of the method are also disclosed for the optoelectronic device and vice versa.
According to at least one embodiment the method for producing a surface-mountable optoelectronic device comprises a step A) in which a plurality of individual semiconductor chips is attached onto an intermediate carrier. Each semiconductor chip comprises a contact side with contact elements and an emission side opposite to the contact side, wherein the semiconductor chips are attached with the contact sides facing the intermediate carrier. Thus, after attaching the semiconductor chips, the emission sides face away from the intermediate carrier.
The intermediate carrier is for example a metal or glass substrate. In particular the intermediate carrier is self- supporting. An adhesive film, like a silicone film or a thermoplastic film or a thermo-release tape, might be placed on top of the intermediate carrier. The adhesive film might help to temporarily fix the semiconductor chips on the intermediate carrier. According to at least one embodiment the method comprises a step B) in which the semiconductor chips are molded with a first housing material such that regions between the
semiconductor chips are filled with the first housing
material and such that each semiconductor chip is surrounded by the first housing material form-fittingly in a lateral direction. After molding the semiconductor chips with the first housing material, the first housing material preferably terminates flush with the emission sides of the semiconductor chips .
According to at least one embodiment the method comprises a step C) in which a photoresist layer is applied on the semiconductor chips and on the first housing material.
Preferably, the photoresist layer is a contiguous layer covering a plurality or all of the semiconductor chips and the first housing material in between the semiconductor chips. The photoresist layer might be formed by a positive or a negative photoresist material.
According to at least one embodiment the method comprises a step D) , in which the photoresist layer is structured such that first holes are formed in the regions of first
semiconductor chips. Structuring the photoresist layer is for example done by using a mask or a stepper method or an LDI (Laser Direct Imaging) method. The produced first holes preferably completely penetrate the photoresist layer so that the emission sides of the first semiconductor chips are exposed in the regions of the holes.
The first semiconductor chips can be all of the semiconductor chips or only a part of the semiconductor chips on the intermediate carrier.
According to at least one embodiment the method comprises a step E) , in which a first converter material is applied in the first holes such that first converter elements are produced, which cover the emission sides of the corresponding first semiconductor chips. The first converter elements can, for example, be formed by curing the first converter
material . According to at least one embodiment the method comprises a step F) , in which the first housing material is cut in the regions between at least some of the semiconductor chips. In this step the layer of the first housing material is
preferably completely cut through in the vertical direction, perpendicular to the lateral direction. This step is
performed for singling out individual optoelectronic devices from the composite formed by the semiconductor chips and the first housing material.
According to at least one embodiment the method comprises a step G) , in which the intermediate carrier is detached. After the steps F) and G) individual optoelectronic devices are obtained, wherein each optoelectronic device comprises a semiconductor chip and a first housing body made of the first housing material, said first housing body surrounds the semiconductor chip form-fittingly in the lateral direction. In an unmounted configuration of the optoelectronic device the contact elements of the semiconductor chip are freely accessible at a bottom side of the optoelectronic device.
According to at least one embodiment the steps A) to E) are performed as individual steps and in the indicated order. The steps F) and G) are performed after step E) . The order of the steps F) and G) might be as indicated or vice-versa.
According to at least one embodiment the method comprises a step Dl), which is carried out of the step E) . In step Dl) the photoresist layer is structured again such that second holes are formed in the regions of second semiconductor chips, which are different from the first semiconductor chips. Structuring the photoresist layer a second time can be done with the same methods as specified above.
According to at least one embodiment the method comprises a step El), which is performed after step Dl), and in which a second converter material is applied in the second holes such that second converter elements are produced in the second holes. The second converter elements cover the emission surfaces of the corresponding second semiconductor chips. The second holes are preferably formed such that the emission surfaces of the corresponding second semiconductor chips are exposed. The second converter material might be cured in order to form the second converter elements. Preferably, the semiconductor chips are either covered by a first converter element or by a second converter element.
The steps Dl) and El) are preferably performed before the steps F) and G) . The first and second holes are preferably formed such that the complete emission sides of the corresponding
semiconductor chips are exposed and such that the area of the holes, when viewed in a top view, is at most 1.1-times or at most 1.05-times or at most 1.01-times larger than the area of the emission sides. This means that the holes are formed to be essentially as large as the emission sides.
According to at least one embodiment the regions between the semiconductor chips keep covered with the photoresist layer during the step E) and preferably also during the step El) .
This means that the photoresist layer is not removed from the regions of the first housing material between the semiconductor chips before the step E) and/or the step El) is performed .
According to at least one embodiment the method comprises a step E2), which is carried out after the step E) and
preferably also after the step El), in which the photoresist layer is removed from the regions between the semiconductor chips such that in these regions the first housing material is exposed.
According to at least one embodiment the method comprises a step E3) , carried out after step E2), in which the exposed housing material in the regions between the semiconductor chips is covered with a second housing material.
The first converter material and/or the second converter material and/or the second housing material might for example be applied with a screen-printing process. The steps D) , E) , Dl), El), E2), E3) are preferably performed in the indicated order and before the steps F) and G) .
According to at least one embodiment the second housing material is applied such that the second housing material terminates flush with the first converter elements and preferably also with the second converter elements in a direction away from the intermediate carrier.
According to at least one embodiment the first housing material comprises T1O2 ·
According to at least one embodiment the second housing material is a clear silicone. According to at least one embodiment the first housing material is cut in step F) in such a way that each produced optoelectronic device comprises at least two semiconductor chips. The at least two semiconductor chips of one
optoelectronic device are mechanically connected to each other via the first housing material.
According to at least one embodiment the semiconductor chips are molded with the first housing material in step B) such that the first housing material terminates flush with the emission sides of the semiconductor chips.
Hereinafter, a method for producing a surface-mountable optoelectronic device as well as a surface-mountable
optoelectronic device described herein are described with reference to the drawings by means of exemplary embodiments. Here, like reference numerals indicate like elements in the figures. However, the size ratios involved are not to scale, individual elements may rather be illustrated with an exaggerated size for a better understanding.
As shown in: Figures 1A to 1M different positions in an exemplary embodiment of the method for producing a surface-mountable optoelectronic device,
Figures 2A to 7B different exemplary embodiments of a surface-mountable optoelectronic device in a cross-sectional view and a top view. In Figure 1A a first position of an exemplary embodiment of the method for producing a surface-mountable optoelectronic device is shown. A plurality of semiconductor chips 1A, IB is attached to an intermediate carrier 6. An adhesive film 60 is applied on top of the intermediate carrier 6. The
semiconductor chips 1A, IB are attached to this adhesive film 60, which temporarily fixes the semiconductor chips 1A, IB to the intermediate carrier 6. The semiconductor chips 1A, IB are for example flip-chips, which each comprise a contact side 11 with two contact elements 15 for electrically connecting the semiconductor chips 1A, IB. A side opposite to the contact side 11 is an emission side 13 of the semiconductor chips 1A, IB. The emission side 13 and the contact side 11 form main extension sides of the semiconductor chips 1A, IB.
In Figure IB a position of the method is shown in which the semiconductor chips 1A, IB are casted or potted with a first housing material 20. The first housing material 20, for example, comprises T1O2 particles distributed in a matrix material like a silicone or a resin or an epoxy. Regions 8 in-between the semiconductor chips 1A, IB are filled such that the first housing material 20 surrounds the
semiconductor chips 1A, IB in a lateral direction, parallel to the main extension sides of the semiconductor chips 1A, IB, in a form-fitting manner. The first housing material 20 directly adjoins the side surfaces of the semiconductor chips 1A, IB. Moreover, the first housing material 20 terminates flush with the emission sides 13 of the semiconductor chips 1A, IB. In Figure 1C a position of the method is shown in which a photoresist layer 7 is applied on top of the semiconductor chips 1A, IB. The photoresist layer 7 is contiguous and covers a plurality of semiconductor chips 1A, IB.
Figure ID illustrates a position of the method in which the photoresist layer 7 is structured in the regions of first semiconductor chips 1A. For this purpose, the photoresist layer 7 is irradiated in the region of the first
semiconductor chips 1A.
Figure IE shows the result after structuring the photoresist layer 7 and after removing the remaining solvable regions of the photoresist layer 7. The structuring of the photoresist layer 7 results in first holes 71 in the regions of the first semiconductor chips 1A. In the regions of the first holes 71 the emission sides 13 of the first semiconductor chips 1A are exposed. The sizes of the first holes 71 correspond to the areas of the emission sides 13.
In Figure IF a position of the method is shown in which a first converter material 40 is applied in the region of the first holes 71 such that the emission sides 13 of the first semiconductor chips 1A are covered with the first converter material 40. The first converter material 40 is for example applied with help of a screen-printing process. The first converter material 40 might be chosen in such a way that radiation, emitted by the first semiconductor chips 1A, for example blue light, is partially converted such that the light leaving the first converter material 40 is warm-white light . After, for example, curing the first converter material 40 first converter elements 4 are produced, wherein each first converter element 4 is associated to a first semiconductor chip 1A on a one-to-one basis.
Figure 1G shows a position of the method in which the
photoresist layer is irradiated again but this time in the region of second semiconductor chips IB, being different from the first semiconductor chips 1A.
Figure 1H illustrates the result after structuring the photoresist layer 7 for the second time. Second holes 72 are produced in the regions of the second semiconductor chips IB so that the emission sides 13 of the second semiconductor chips IB are exposed in the regions of the second holes 72. The size of the second holes 72 is again essentially
identical to the area of the emission sides 13.
In Figure II a second converter material 50 is applied in the regions of the second holes 72 such that the emission sides 13 of the second semiconductor chips IB are covered with the second converter material 50. The second converter material 50 is, for example, chosen such that the light emitted by the second semiconductor chips IB, which for example is again blue light, is partially converted such that cold-white light leaves the second converter material 50.
The first converter material 40 and the second converter material 50 can be cured in a common step in order to produce first converter elements 4 and second converter elements 5, each of the converter elements 4, 5 being associated to exactly one semiconductor chip 1A, IB. In Figure 1J a position is shown in which the rest of the photoresist layer 7, which was still covering the first housing material 20 in the region 8 between neighboring semiconductor chips 1A, IB, is removed.
In Figure IK a position is shown in which a second housing material 30 is applied to the first housing material 20 in the regions 8 between neighboring semiconductor chips 1A, IB. The second housing material 30 is, for example, a clear silicone. The second housing material 30 is applied in such a way that the converter elements 4, 5 are laterally surrounded form-fittingly by the second housing material 30 and such that the converter elements 4, 5 and the second housing material 30 terminate flush with each other in a direction away from the intermediate carrier 6.
Afterwards the converter elements 4, 5 and the second housing material 3 can be cleaned, for example by blasting. In Figure 1L a position of the method is shown in which the first housing material 20 and the second housing material 30 are cut in the regions between the semiconductor chips 1A, IB. Figure 1M shows a position in the method in which the
intermediate carrier 6 together with the adhesive film 60 is removed. As a result individual surface-mountable
optoelectronic devices 100 are obtained. The first housing material 20 and the second housing material 30 have been cut in those regions such that each of the obtained
optoelectronic devices 100 comprises at least two
semiconductor chips 1A, IB. Moreover, for each of the
optoelectronic devices 100 the contact elements 15 of the semiconductor chips 1A, IB form a part of a bottom side 101 of the optoelectronic devices 100. Furthermore, each
optoelectronic device 100 comprises a part of the first housing material 40, forming a first housing body 4, which laterally surrounds the semiconductor chips 1A, IB, and a part of the second housing material 50, forming a second housing body 5, which laterally surrounds the converter elements 4, 5. Figure 2A shows a cross-sectional view of an exemplary embodiment of the surface-mountable optoelectronic device 100. The optoelectronic device 100 shown in Figure 2A is one of the optoelectronic devices 100 produced in Figure 1M. The optoelectronic device 100 comprises a top side 103 and a bottom side 101 which both form main extension sides of the optoelectronic device 100. The side surfaces 102, running crosswise to the bottom side 101 and the top side 103, connect the top side 103 and the bottom side 101 to each other. The side surfaces 102 are completely formed by the first housing body 2 and the second housing body 3. The top side 103 is completely formed by the second housing body 3 and the converter elements 4, 5. The bottom side 101 is completely formed by the first housing body 2 and the contact elements 15 of the semiconductor chips 1A, IB.
The optoelectronic device of Figure 2A is a Chip Scale
Package (CSP) , where the volume of the whole optoelectronic device 100 is at most 1.3-times larger than the sum of the volumes of the semiconductor chips 1A, IB of the
optoelectronic device 100. Figure 2B shows a top view on the top side 103 of the
optoelectronic device 100. The optoelectronic device 100 comprises exactly two semiconductor chips 1A, IB, wherein the first semiconductor chip 1A is covered with the first
converter element 4 and the second semiconductor chip IB is covered with the second converter element 5. Both converter elements 4, 5 are laterally completely and form-fittingly surrounded by the second housing body 3. Figure 3A shows an exemplary embodiment of an optoelectronic device 100, which comprises only one semiconductor chip 1A and the corresponding converter element 4. To obtain such an optoelectronic device 100, the housing material 40 has to be cut in appropriate regions when producing the optoelectronic devices 100.
In Figure 3B a top view on the top side 103 of the
optoelectronic device 100 of Figure 3A is shown. Figure 4A shows a cross-sectional view of an optoelectronic device 100 where both semiconductor chips 1A, IB are covered with first converter elements 4 of the same type.
Figure 4B shows a top view on top of the top side 103 of the optoelectronic device 100 of figure 4A.
Figures 5A and 5B show an optoelectronic device 100 in a cross-section view and a top view, wherein the optoelectronic device 100 comprises four semiconductor chips 1A, IB, each of the semiconductor chips 1A, IB being covered with its own converter element 4. The converter elements 4 are all of the same type. Figures 6A and 6B show an optoelectronic device 100, which again comprises four semiconductor chips 1A, IB. However, in this case, two first semiconductor chips 1A are each covered with a first converter element 4 and two second semiconductor chips IB are each covered with a second converter element 5. The first converter elements 4 are arranged next to each other and so are the second converter elements 5. The first converter elements 4 comprise, for example, a different phosphor than the second converter elements 5.
The optoelectronic device 100 of Figure 7A and 7B differs from that of Figure 6A and 6B only by the feature that now the first converter elements 4 are arranged diagonally opposite to each other and so are the second converter elements 5.
The invention described herein is not limited by the
description in conjunction with the exemplary embodiments. Rather, the invention comprises any new feature as well as any combination of features, particularly including any combination of features in the patent claims, even if said feature or said combination per se is not explicitly stated in the patent claims or exemplary embodiments.
Reference number list
1A first semiconductor chip
IB second semiconductor chip
2 first housing body
3 second housing body
4 first converter element
5 second converter element
6 intermediate carrier
7 photoresist layer
11 contact side
13 emission side
15 contact elements
20 first housing material
30 second housing material
40 first converter material
50 second converter material
60 adhesive film
100 surface-mountable optoelectronic device 101 bottom side
102 side surface
103 top side

Claims

Claims
1. Surface-mountable optoelectronic device (100), comprising
- two or more semiconductor chips (1A, IB), wherein each
semiconductor chip (1A, IB) is designed to emit radiation during its intended operation,
- a contiguous first housing body (2), wherein
- each semiconductor chip (1A, IB) comprises a contact side (11) with contact elements (15) for electrically
contacting the semiconductor chip (1A, IB),
- in an unmounted configuration of the optoelectronic device (100) the contact elements (15) of the semiconductor chips (1A, IB) form a part of a bottom side (101) of the
optoelectronic device (100) and are freely accessible at the bottom side (101) of the optoelectronic device (100),
- the semiconductor chips (1A, IB) are molded into the first housing body (2) such that the first housing body (2) surrounds the semiconductor chips (1A, IB) form-fittingly in a lateral direction,
- a side surface (102) of the optoelectronic device (100) is at least partially formed by the first housing body (2) .
2. Optoelectronic device according to claim 1, further
comprising one or more converter elements (4, 5), wherein each converter element (4, 5) is associated to a
semiconductor chip (1A, IB) on a one-to-one basis and is placed on an emission side (13) of the corresponding semiconductor chip (1A, IB), said emission side (13) being located opposite to the contact side (11),
each converter element (4, 5) forms a part of a top side (103) of the optoelectronic device (100).
3. Optoelectronic device according to claim 2, wherein the first housing body (2) is opaque to the radiation emitted by the semiconductor chips (1A, IB),
a second housing body (3) , which is translucent for the light emitted by the semiconductor chips (1A, IB), is located on top of the first housing body (2),
the second housing body (3) forms a part of the top side
(103) of the optoelectronic device (100),
each converter element (4, 5) is molded into the second housing body (3) such that the second housing body (3) surrounds the converter element (4, 5) form-fittingly in the lateral direction.
4. Optoelectronic device (100) according to at least claim 2, wherein the optoelectronic device (100) comprises a first converter element (4) and a second converter element (5) which are different from each other such that the first converter element (4) and the second converter element (5) convert the radiation, emitted by the semiconductor chips (1A, IB), into a radiation of different wavelength ranges.
5. Optoelectronic device (100) according to at least one of the preceding claims, wherein the optoelectronic device (100) is a Chip Scale Package.
6. Optoelectronic device (100) according to at least one of the preceding claims, wherein the distance between two neighboring semiconductor chips (1A, IB) amounts to at most 10 % of the lateral extent of the whole
optoelectronic device (100).
7. Optoelectronic device (100) according to at least claim 3, wherein
the first housing body (2) comprises 1O2, - 2 \ the second housing body (3) is a clear silicone.
8. Method for producing a surface-mountable optoelectronic device (100) comprising the steps of:
A) Attaching a plurality of individual semiconductor chips (1A, IB) on an intermediate carrier (6), wherein each semiconductor chip (1) comprises a contact side (11) with contact elements (15) and an emission side (13) opposite to the contact side, wherein the semiconductor chips (1A, IB) are attached with the contact sides (11) facing the intermediate carrier (6);
B) Molding the semiconductor chips (1A, IB) with a first
housing material (20) such that regions (8) between the semiconductor chips (1A, lb) are filled with the first housing material (20) and such that each semiconductor chip (1A, IB) is surrounded by the first housing material (20) form-fittingly in a lateral direction;
C) Applying a photoresist layer (7) on the semiconductor
chips (1A, IB) and the first housing material (2);
D) Structuring the photoresist layer (7) such that first
holes (71) are formed in the regions of first
semiconductor chips (1A);
E) Applying a first converter material (40) in the first
holes (71) such that first converter elements (4) are produced in the first holes (71), which cover the emission sides (13) of corresponding first semiconductor chips (1A) ;
F) Cutting the first housing material (20) in the regions (8) between at least some semiconductor chips (1A, IB);
G) Detaching the intermediate carrier (6); such that
after the steps F) and G) individual optoelectronic devices (100) are obtained, wherein each optoelectronic device (100) comprises a semiconductor chip (1A, IB) and a first housing body (4) made of the first housing material (40), said first housing body (4) surrounds the semiconductor chip (1A, IB) form-fittingly in the lateral direction,
in an unmounted configuration of the optoelectronic device (100) the contact elements (15) of the semiconductor chip (1A, IB) are freely accessible at a bottom side (101) of the optoelectronic device (100).
9. Method according to claim 8, wherein
in a step Dl), which is carried out after step E) , the photoresist layer (7) is structured again such that second holes (72) are formed in the regions of second
semiconductor chips (IB), which are different from the first semiconductor chips (1A),
in a step El) a second converter material (50) is applied in the second holes (72) such that second converter elements (5) are produced in the second holes (72), which cover the emission surfaces (13) of the corresponding second semiconductor chips (IB) .
10. Method according to claim 8 or 9, wherein
during the step E) the regions (8) between the
semiconductor chips (1A, IB) keep covered with the
photoresist layer (7)
in a step E2), carried out after step E) , the photoresist layer (7) is removed from the regions (8) between the semiconductor chips (1A, IB) such that the first housing material (20) is exposed in these regions (8) .
11. Method according to claim 10, wherein in a step E3) , carried out after step E2), the exposed housing material (20) in the regions (8) between the
semiconductor chips (1A, IB) is covered with a second housing material (30) .
12. Method according to claim 11, wherein
the second housing material (20) is applied such that the second housing material (20) terminates flush with the first converter elements (3) in a direction away from the
intermediate carrier (6) .
13. Method according to at least claim 11, wherein
- the first housing material (20) comprises 1O2,
- the second housing material (30) is a clear silicone.
14. Method according to at least one of the preceding claims, wherein
in step F) the first housing material (20) is cut in such a way that each produced optoelectronic device (100) comprises at least two semiconductor chips (1A, IB) .
15. Method according to at least one of the preceding claims, wherein in step B) the semiconductor chips (1A, IB) are molded with the first housing material (20) such that the first housing material (20) terminates flush with the
emission sides (13) of the semiconductor chips (1A, IB) .
PCT/EP2017/071997 2017-09-01 2017-09-01 Surface-mountable optoelectronic device and method for producing a surface-mountable optoelectronic device WO2019042564A1 (en)

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