JP6073428B2 - オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 - Google Patents
オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 Download PDFInfo
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- JP6073428B2 JP6073428B2 JP2015168164A JP2015168164A JP6073428B2 JP 6073428 B2 JP6073428 B2 JP 6073428B2 JP 2015168164 A JP2015168164 A JP 2015168164A JP 2015168164 A JP2015168164 A JP 2015168164A JP 6073428 B2 JP6073428 B2 JP 6073428B2
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- 239000004065 semiconductor Substances 0.000 title claims description 248
- 230000005693 optoelectronics Effects 0.000 title claims description 129
- 238000004519 manufacturing process Methods 0.000 title description 8
- 230000005670 electromagnetic radiation Effects 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000000034 method Methods 0.000 description 43
- 239000010410 layer Substances 0.000 description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 25
- 239000000463 material Substances 0.000 description 14
- 238000000465 moulding Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000012778 molding material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 BaSO 4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Description
− キャリアを形成するステップと、
− キャリアの上面に少なくとも1個のオプトエレクトロニクス半導体チップを配置するステップと、
− 少なくとも1個のオプトエレクトロニクス半導体チップの周囲に成形体を成形するステップであって、成形体が少なくとも1個のオプトエレクトロニクス半導体チップの側面領域すべてを覆っている、ステップと、
− キャリアを除去するステップと、
を含んでいる。
本特許出願は、独国特許出願第102009036621.0号の優先権を主張し、この文書の開示内容は参照によって本出願に組み込まれている。
Claims (12)
- オプトエレクトロニクス半導体部品であって、
− 上面(2a)と、下面(2b)と、側面領域(2c)とを有するオプトエレクトロニクス半導体チップ(2)と、
− 上面(3a)と、下面(3b)とを有する成形体(3)と、
− 導電性材料を有する少なくとも1つのめっきスルーホール(6)と、
− 前記半導体チップ(2)と前記めっきスルーホール(6)とに導電接続されている導電接続部(7)と、
を備えており、
− 前記オプトエレクトロニクス半導体チップ(2)の前記側面領域(2c)が、成形体(3)によって覆われており、
− 前記めっきスルーホール(6)が、前記半導体チップ(2)の側方に間隔を介して配置され、
− 前記めっきスルーホール(6)が、前記成形体(3)を完全に貫いており、前記成形体(3)の上面(3a)から前記成形体(3)の下面(3b)まで延在しており、
− 前記導電接続部(7)が前記成形体(3)の前記上面(3a)に延在しており、
− 前記オプトエレクトロニクス半導体チップ(2)の前記上面(2a)および前記下面(2b)が前記成形体(3)から離れており、
− 前記成形体(3)の前記上面(3a)は、少なくとも部分的に前記導電接続部(7)が存在しない、
オプトエレクトロニクス半導体部品。 - オプトエレクトロニクス半導体部品であって、
− それぞれが、上面(2a)と、下面(2b)と、側面領域(2c)とを有する複数のオプトエレクトロニクス半導体チップ(2)と、
− 上面(3a)と、下面(3b)とを有する成形体(3)と、
− 導電性材料を有する少なくとも1つのめっきスルーホール(6)と、
− いずれもが、前記複数のオプトエレクトロニクス半導体チップ(2)の少なくとも1つに導電接続されている複数の導電接続部(7)と、
を備えており、
− 前記複数のオプトエレクトロニクス半導体チップ(2)の前記側面領域(2c)のいずれもが、成形体(3)によって覆われており、
− 前記複数の導電接続部(7)のそれぞれが前記成形体(3)の前記上面(3a)に延在しており、
− 前記複数の導電接続部(7)の少なくとも1つが前記めっきスルーホール(6)に導電接続されており、前記めっきスルーホール(6)が前記少なくとも1つの導電接続部(7)に導電接続された前記半導体チップ(2)の側方に間隔を介して配置されており、
− 前記めっきスルーホール(6)が、前記成形体(3)を完全に貫いており、前記成形体(3)の前記上面(3a)から前記成形体(3)の前記下面(3b)まで延在しており、
− 前記複数のオプトエレクトロニクス半導体チップ(2)が前記導電接続部(7)によって直列に接続されており、
前記半導体チップ(2)は、前記側面領域(2c)において、特定の高さまでのみ前記成形体(3)によって覆われ、
前記半導体チップ(2)の一部分は、前記成形体(3)の上面(3a)から突き出している、
オプトエレクトロニクス半導体部品。 - 前記成形体(3)が、放射を吸収するように具現化されている、
請求項1または請求項2に記載のオプトエレクトロニクス半導体部品。 - 前記成形体(3)が、放射に対して反射性であるように、または放射に対して透過性であるように具現化されている、
請求項1または請求項2に記載のオプトエレクトロニクス半導体部品。 - 前記成形体(3)がマトリックス材料を含んでおり、前記マトリックス材料がシリコーンを含んでいる、またはシリコーンからなる、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス半導体部品。 - 前記成形体(3)がマトリックス材料を含んでおり、前記マトリックス材料がエポキシ樹脂を含んでいる、またはエポキシ樹脂からなる、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス半導体部品。 - 複数のオプトエレクトロニクス半導体チップ(2)を有し、前記複数のオプトエレクトロニクス半導体チップ(2)は、前記成形体(3)の前記上面(3a)に延在している前記導電接続部(7)によって互いに導電接続されている、
請求項1に記載のオプトエレクトロニクス半導体部品。 - 前記成形体(3)は、前記オプトエレクトロニクス半導体チップ(2)の前記側面領域(2c)に部分的に前記成形体(3)が存在しないように、または、前記成形体(3)の前記上面(3a)および前記下面(3b)がそれぞれ前記オプトエレクトロニクス半導体チップ(2)の前記上面(2a)および前記下面(2b)と同一面で終端するように、前記オプトエレクトロニクス半導体チップ(2)の前記側面領域(2c)を特定の高さまで覆っている、
請求項1から請求項7のいずれかに記載のオプトエレクトロニクス半導体部品。 - 前記成形体(3)は、前記オプトエレクトロニクス半導体チップ(2)の前記側面領域(2c)に沿った垂直方向において、前記オプトエレクトロニクス半導体チップ(2)から突き出していない、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクス半導体部品。 - 前記オプトエレクトロニクス半導体チップ(2)の下面に導電性のコンタクト領域(4a)が配置されており、前記コンタクト領域(4a)は自由にアクセス可能である、
請求項1から請求項9のいずれかに記載のオプトエレクトロニクス半導体部品。 - 複数のオプトエレクトロニクス半導体チップ(2)を有し、
− 前記半導体チップ(2)それぞれが、動作時に、前記半導体チップ(2)に割り当てられているピーク波長を有する波長域の電磁放射を生成するように設けられ、
− 前記半導体チップ(2)それぞれの前記ピーク波長が、すべての前記オプトエレクトロニクス半導体チップ(2)の前記ピーク波長の平均値から最大で±2%逸脱している、
請求項1から請求項10のいずれかに記載のオプトエレクトロニクス半導体部品。 - キャリアがなく、前記めっきスルーホール(6)が前記成形体(3)の前記上面(3a)および前記下面(3b)に接続可能となっている、
請求項1から請求項11のいずれかに記載のオプトエレクトロニクス半導体部品。
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