JP2013501368A - オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 - Google Patents
オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 Download PDFInfo
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Abstract
【選択図】図2
Description
− キャリアを形成するステップと、
− キャリアの上面に少なくとも1個のオプトエレクトロニクス半導体チップを配置するステップと、
− 少なくとも1個のオプトエレクトロニクス半導体チップの周囲に成形体を成形するステップであって、成形体が少なくとも1個のオプトエレクトロニクス半導体チップの側面領域すべてを覆っている、ステップと、
− キャリアを除去するステップと、
を含んでいる。
本特許出願は、独国特許出願第102009036621.0号の優先権を主張し、この文書の開示内容は参照によって本出願に組み込まれている。
Claims (13)
- オプトエレクトロニクス半導体部品を製造する方法であって、
− キャリア(1)を形成するステップと、
− 前記キャリア(1)の上面(1a)に少なくとも1個のオプトエレクトロニクス半導体チップ(2)を配置するステップと、
− 前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の周囲に成形体(3)を成形するステップであって、前記成形体(3)が前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の側面領域(2c)すべてを覆っており、前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の上面(2a)における、前記キャリア(1)とは反対側の前記面、もしくは、前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の下面(2b)における、前記キャリア(1)の側の前記面、またはその両方に、前記成形体(3)が存在しない、またはこれらの面が露出している、前記ステップと、
− 前記キャリア(1)を除去するステップと、
を含んでいる、方法。 - 前記成形体(3)がマトリックス材料を含んでおり、
前記成形体(3)が白色に見えるように、光を反射する粒子が前記マトリックス材料に導入されている、
請求項1に記載の方法。 - 前記マトリックス材料がシリコーンを含んでいる、またはシリコーンからなり、光を反射する前記粒子が酸化チタンからなる、
請求項2に記載の方法。 - − 多数のオプトエレクトロニクス半導体チップ(2)が前記キャリア(1)の前記上面(1a)に配置され、
− 前記半導体チップ(2)それぞれが、動作時に、前記半導体チップ(2)に割り当てられているピーク波長を有する波長域の電磁放射を生成するように設けられ、
− 前記半導体チップ(2)それぞれの前記ピーク波長が、すべての前記オプトエレクトロニクス半導体チップ(2)の前記ピーク波長の平均値から最大で±2%逸脱している、
請求項1から請求項3のいずれかに記載の方法。 - 前記成形工程の前または後に、前記オプトエレクトロニクス半導体チップ(2)の下流に、前記オプトエレクトロニクス半導体チップ(2)の上面(2a)または下面(2b)に、共通の蛍光体層(8)が配置される、
請求項4に記載の方法。 - − 半導体チップ(2)それぞれに対して、前記成形工程の前または後に、導電性材料を有する少なくとも1つのめっきスルーホール(6)が形成され、
− 前記めっきスルーホール(6)が、対応する前記半導体チップ(2)の側方に間隔を介して配置され、
− 前記めっきスルーホール(6)が、前記成形体(3)を完全に貫いており、前記成形体(3)の上面(3a)から前記成形体(3)の下面(3b)まで延在している、
請求項1から請求項5のいずれかに記載の方法。 - 前記めっきスルーホール(6)と、対応する前記半導体チップ(2)との間に、導電接続部(7)が形成され、前記導電接続部(7)が、前記半導体チップ(2)の前記上面(2a)、前記キャリア(1)とは反対側の面に、導電接続され、前記成形体(3)の前記上面(3a)に延在している、
請求項6に記載の方法。 - オプトエレクトロニクス半導体部品であって、
− オプトエレクトロニクス半導体チップ(2)であって、その側面領域(2c)が成形体(3)によって覆われている、前記オプトエレクトロニクス半導体チップ(2)と、
− 導電性材料を備えている少なくとも1つのめっきスルーホール(6)と、
− 前記半導体チップ(2)と前記めっきスルーホール(6)とに導電接続されている導電接続部(7)と、
を備えており、
− 前記めっきスルーホール(6)が、前記半導体チップ(2)の側方に間隔を介して配置されており、
− 前記めっきスルーホール(6)が、前記成形体(3)を完全に貫いており、前記めっきスルーホール(6)が、前記成形体(3)の上面(3a)から前記成形体(3)の下面(3b)まで延在しており、
− 前記導電接続部(7)が前記成形体(3)の前記上面(3a)に延在している、
オプトエレクトロニクス半導体部品。 - 前記成形体(3)が、光学的に反射性であるように具体化されている、
請求項8に記載のオプトエレクトロニクス半導体部品。 - 前記成形体(3)がマトリックス材料を含んでおり、
前記成形体(3)が白色に見えるように、光を反射する粒子が前記マトリックス材料に導入されている、
請求項9に記載のオプトエレクトロニクス半導体部品。 - 前記マトリックス材料がシリコーンを含んでいる、またはシリコーンからなり、光を反射する前記粒子が酸化チタンからなる、
請求項10に記載のオプトエレクトロニクス半導体部品。 - 前記成形体(3)が、放射に対して透過性であるように具体化されている、
請求項8に記載のオプトエレクトロニクス半導体部品。 - 多数のオプトエレクトロニクス半導体チップ(2)を備えており、前記多数のオプトエレクトロニクス半導体チップ(2)が、前記成形体(3)の前記上面(3a)に延在する導電接続部(7)によって、互いに導電接続されている、
請求項8から請求項12のいずれかに記載のオプトエレクトロニクス半導体部品。
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