JP5801805B2 - オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 - Google Patents
オプトエレクトロニクス半導体部品の製造方法およびオプトエレクトロニクス半導体部品 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 244
- 230000005693 optoelectronics Effects 0.000 title claims description 124
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 50
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 230000005670 electromagnetic radiation Effects 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 14
- 230000005855 radiation Effects 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000012778 molding material Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 BaSO 4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Description
− キャリアを形成するステップと、
− キャリアの上面に少なくとも1個のオプトエレクトロニクス半導体チップを配置するステップと、
− 少なくとも1個のオプトエレクトロニクス半導体チップの周囲に成形体を成形するステップであって、成形体が少なくとも1個のオプトエレクトロニクス半導体チップの側面領域すべてを覆っている、ステップと、
− キャリアを除去するステップと、
を含んでいる。
本特許出願は、独国特許出願第102009036621.0号の優先権を主張し、この文書の開示内容は参照によって本出願に組み込まれている。
Claims (14)
- オプトエレクトロニクス半導体部品を製造する方法であって、
− キャリア(1)を形成するステップと、
− 前記キャリア(1)の上面(1a)に少なくとも1個のオプトエレクトロニクス半導体チップ(2)を配置するステップと、
− 前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の周囲に成形体(3)を成形するステップであって、前記成形体(3)が前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の側面領域(2c)すべてを覆っており、前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の上面(2a)における、前記キャリア(1)とは反対側の前記面、および、前記少なくとも1個のオプトエレクトロニクス半導体チップ(2)の下面(2b)における、前記キャリア(1)の側の前記面に、前記成形体(3)が存在しない、またはこれらの面が露出している、前記ステップと、
− 半導体チップ(2)それぞれに対して、前記成形工程の前または後に、導電性材料を有する少なくとも1つのめっきスルーホール(6)を形成するステップであり、前記めっきスルーホール(6)が、対応する前記半導体チップ(2)の側方に間隔を介して配置され、かつ、前記めっきスルーホール(6)が、前記成形体(3)を完全に貫いており、前記成形体(3)の上面(3a)から前記成形体(3)の下面(3b)まで延在している、前記ステップと、
− 前記キャリア(1)を除去するステップと、
を含んでおり、
前記成形体(3)がマトリックス材料を含んでおり、
前記成形体(3)が白色に見えるように、光を反射する粒子が前記マトリックス材料に導入されており、
前記一連のステップは、上述の順序で順次実行される、
方法。 - 前記成形体(3)は、前記オプトエレクトロニクス半導体チップ(2)の上面(2a)を覆っていない、
請求項1に記載の方法。 - 前記マトリックス材料がシリコーンを含んでいる、またはシリコーンからなり、光を反射する前記粒子が酸化チタンからなる、
請求項2に記載の方法。 - − 多数のオプトエレクトロニクス半導体チップ(2)が前記キャリア(1)の前記上面(1a)に配置され、
− 前記半導体チップ(2)それぞれが、動作時に、前記半導体チップ(2)に割り当てられているピーク波長を有する波長域の電磁放射を生成するように設けられ、
− 前記半導体チップ(2)それぞれの前記ピーク波長が、すべての前記オプトエレクトロニクス半導体チップ(2)の前記ピーク波長の平均値から最大で±2%逸脱している、
請求項1から請求項3のいずれかに記載の方法。 - 成形工程の前または後に、前記オプトエレクトロニクス半導体チップ(2)の下流に、前記オプトエレクトロニクス半導体チップ(2)の上面(2a)または下面(2b)に、共通の蛍光体層(8)が配置される、
請求項4に記載の方法。 - 前記めっきスルーホール(6)と、対応する前記半導体チップ(2)との間に、導電接続部(7)が形成され、前記導電接続部(7)が、前記半導体チップ(2)の前記上面(2a)、前記キャリア(1)とは反対側の面に、導電接続され、前記成形体(3)の前記上面(3a)に延在している、
請求項5に記載の方法。 - オプトエレクトロニクス半導体部品であって、
− オプトエレクトロニクス半導体チップ(2)であって、その側面領域(2c)が成形体(3)によって覆われている、前記オプトエレクトロニクス半導体チップ(2)と、
− 導電性材料を備えている少なくとも1つのめっきスルーホール(6)と、
− 前記半導体チップ(2)と前記めっきスルーホール(6)とに導電接続されている導電接続部(7)と、
を備えており、
− 前記めっきスルーホール(6)が、前記半導体チップ(2)の側方に間隔を介して配置されており、
− 前記めっきスルーホール(6)が、前記成形体(3)を完全に貫いており、前記めっきスルーホール(6)が、前記成形体(3)の上面(3a)から前記成形体(3)の下面(3b)まで延在しており、
− 前記導電接続部(7)が前記成形体(3)の前記上面(3a)に延在しており、
前記成形体(3)が、光学的に反射性であるように具体化されており、
前記めっきスルーホール(6)が、前記成形体(3)の前記上面(3a)および前記下面(3b)に電気的に接続可能であり、
少なくとも1個のオプトエレクトロニクス半導体チップ(2)の上面(2a)および下面(2b)には、前記成形体(3)が存在しない、
オプトエレクトロニクス半導体部品。 - 前記成形体(3)がマトリックス材料を含んでおり、
前記成形体(3)が白色に見えるように、光を反射する粒子が前記マトリックス材料に導入されている、
請求項7に記載のオプトエレクトロニクス半導体部品。 - 前記マトリックス材料がシリコーンを含んでいる、またはシリコーンからなり、光を反射する前記粒子が酸化チタンからなる、
請求項8に記載のオプトエレクトロニクス半導体部品。 - 多数のオプトエレクトロニクス半導体チップ(2)を備えており、前記多数のオプトエレクトロニクス半導体チップ(2)が、前記成形体(3)の前記上面(3a)に延在する導電接続部(7)によって、互いに導電接続されている、
請求項7から請求項9のいずれかに記載のオプトエレクトロニクス半導体部品。 - 前記少なくとも1つのめっきスルーホール(6)が、前記成形体(3)の前記上面(3a)および前記下面(3b)に自由にアクセス可能である、
請求項7から請求項10のいずれかに記載のオプトエレクトロニクス半導体部品。 - − 前記オプトエレクトロニクス半導体チップ(2)の上面(2a)は、自由にアクセス可能であり、
− 少なくとも1つの電気的導電コンタクト領域(4a)は、前記オプトエレクトロニクス半導体チップ(2)の下面(2a)に配置されており、前記コンタクト領域(4a)は自由にアクセス可能である、
請求項7から請求項11のいずれかに記載のオプトエレクトロニクス半導体部品。 - − 前記オプトエレクトロニクス半導体部品は、キャリア(1)がなく、
− 前記成形体(3)は、その上面(3a)および下面(3b)で自由にアクセス可能である、
請求項7から請求項12のいずれかに記載のオプトエレクトロニクス半導体部品。 - 請求項7から請求項13のいずれかに記載のオプトエレクトロニクス半導体部品を製造する、
請求項1に記載の方法。
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