JP5792624B2 - 封止された複数の半導体チップを備えたソリッドステートドライブまたは他の記憶装置 - Google Patents
封止された複数の半導体チップを備えたソリッドステートドライブまたは他の記憶装置 Download PDFInfo
- Publication number
- JP5792624B2 JP5792624B2 JP2011535844A JP2011535844A JP5792624B2 JP 5792624 B2 JP5792624 B2 JP 5792624B2 JP 2011535844 A JP2011535844 A JP 2011535844A JP 2011535844 A JP2011535844 A JP 2011535844A JP 5792624 B2 JP5792624 B2 JP 5792624B2
- Authority
- JP
- Japan
- Prior art keywords
- interface
- stack
- semiconductor chips
- solid state
- state drive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 239000007787 solid Substances 0.000 title claims description 39
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 33
- 238000007789 sealing Methods 0.000 description 31
- 238000010586 diagram Methods 0.000 description 19
- 238000013500 data storage Methods 0.000 description 11
- 238000013403 standard screening design Methods 0.000 description 11
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 10
- HHXNVASVVVNNDG-UHFFFAOYSA-N 1,2,3,4,5-pentachloro-6-(2,3,6-trichlorophenyl)benzene Chemical compound ClC1=CC=C(Cl)C(C=2C(=C(Cl)C(Cl)=C(Cl)C=2Cl)Cl)=C1Cl HHXNVASVVVNNDG-UHFFFAOYSA-N 0.000 description 9
- CXOXHMZGEKVPMT-UHFFFAOYSA-N clobazam Chemical compound O=C1CC(=O)N(C)C2=CC=C(Cl)C=C2N1C1=CC=CC=C1 CXOXHMZGEKVPMT-UHFFFAOYSA-N 0.000 description 9
- 229940044442 onfi Drugs 0.000 description 9
- 230000001360 synchronised effect Effects 0.000 description 9
- 238000004806 packaging method and process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000008393 encapsulating agent Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007726 management method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JPOPEORRMSDUIP-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(2,3,5,6-tetrachlorophenyl)benzene Chemical compound ClC1=CC(Cl)=C(Cl)C(C=2C(=C(Cl)C=C(Cl)C=2Cl)Cl)=C1Cl JPOPEORRMSDUIP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0626—Reducing size or complexity of storage systems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0658—Controller construction arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10159—Memory
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/049—Wire bonding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
(関連出願の相互参照)
本出願は、2008年11月13日出願の米国仮特許出願第61/114,154号、および2009年2月6日出願の米国特許出願第12/367,056号の優先権の利益を主張するものであり、これらの特許出願は全体が参照によって本明細書に組み込まれている。
112 プロセッサ
114 メモリコントローラハブ
116 メインメモリ
118 I/Oコントローラハブ
120 バス
122 ディスプレイデバイスコントローラ
124 インタフェースコントローラ
126 データ記憶システム
128 SSDコントローラ
130 ソリッドステートメモリシステム
132 ディスプレイデバイス
134 周辺デバイス
200 PCB
202 領域
204 チップ
228 縁端部
230 システムインタフェースコネクタ
232 デスクトップコンピュータ
233 ベイ
235 ハウジング
250 水晶
252 クロック発生器およびクロック制御部
254 CPU
256 制御モジュール
258 物理層トランシーバ
260 コモンバス
264 物理フラッシュインタフェース
266 ECC部
268 ファイルおよびメモリ管理部
270 ランダムアクセスメモリおよびリードオンリメモリ部
280 SATAコントローラ
290 インタフェース
300 PCB
302 領域
304 メモリチップ
308 封止部
312 コントローラ
500 PCB
502 領域
504 メモリチップ
508 封止部
512 コントローラ
550 PCB
552 領域
554 メモリチップ
558 封止部
562 コントローラ
600 PCB
602 領域
604 メモリチップ
608 封止部
612 コントローラ
650 PCB
652 領域
654 メモリチップ
658 封止部
662 コントローラ
750 PCB
752 領域
754 メモリチップ
758 封止部
762 コントローラ
800 PCB
802 領域
804 メモリチップ
808 封止部
812 コントローラ
813 封止部
850 PCB
852 領域
854 メモリチップ
858 封止部
862 コントローラ
900 PCB領域
904 インタフェースチップ
908 NANDフラッシュチップ
912 封止部
950 PCB領域
954 インタフェースチップ
958 NANDフラッシュチップ
962 封止部
1000 PCB領域
1004 インタフェースチップ
1008 NANDフラッシュチップ
1012 封止部
1014 封止部
1050 PCB領域
1054 インタフェースチップ
1058 NANDフラッシュチップ
1062 封止部
1100 PCB領域
1104 インタフェースチップ
1108 NANDフラッシュチップ
1112 封止部
1114 封止部
1150 PCB領域
1154 インタフェースチップ
1158 NANDフラッシュチップ
1162 封止部
1200 PCB領域
1204 インタフェースチップ
1208 NANDフラッシュチップ
1212 封止部
1214 封止部
1250 PCB領域
1254 インタフェースチップ
1258 NANDフラッシュチップ
1262 封止部
Claims (20)
- ソリッドステートドライブであって、
互いの反対側にある第1の表面および第2の表面を有する回路基板と、
前記第1の表面に取り付けられた複数の半導体チップの積み重なりであって、前記複数
の半導体チップの積み重なりのそれぞれがインタフェースチップと1つ以上のメモリチッ
プとを含み、前記複数の半導体チップの積み重なりのそれぞれが樹脂の中に実質的に封止
されている、複数の半導体チップの積み重なりと、
前記複数の半導体チップの積み重なりの複数の前記インタフェースチップの間での直列
相互接続を介して前記複数の半導体チップの積み重なりと通信するコントローラであって
、前記コントローラがコンピュータシステムから当該ソリッドステートドライブ内で処理
するための信号を受信するインタフェースを含む、コントローラと
を備えるソリッドステートドライブ。 - 前記複数の半導体チップが、前記第1の表面上に幾何学的に配置されており、複数の行
と列を形成する、請求項1に記載のソリッドステートドライブ。 - 各行または各列のどちらかが、それぞれの封止部内に封止されている、請求項2に記載
のソリッドステートドライブ。 - 2行以上の行全体または2行以上の列全体のどちらかが、それぞれの封止部内に封止され
ている、請求項2に記載のソリッドステートドライブ。 - 前記回路基板を内部に収容するための長方形のハウジングを更に備え、前記ハウジング
がラップトップコンピュータ、ネットブックまたはデスクトップコンピュータのいずれか
のベイに挿入できる大きさである、請求項1から4のいずれか一項に記載のソリッドステー
トドライブ。 - 前記樹脂がエポキシを基材とする、請求項1から4のいずれか一項に記載のソリッドステ
ートドライブ。 - 前記第2の表面に取り付けられた第2の複数の半導体チップの積み重なりを更に備え、前
記第2の複数の半導体チップの積み重なりのそれぞれが樹脂の中に実質的に封止されてい
る、請求項1から4のいずれか一項に記載のソリッドステートドライブ。 - 前記コントローラが、前記回路基板に物理的に固定して接合している、請求項1から4の
いずれか一項に記載のソリッドステートドライブ。 - 前記複数の半導体チップの積み重なりのそれぞれの前記1つ以上のメモリチップがNAND
フラッシュメモリチップである、請求項1から4のいずれか一項に記載のソリッドステート
ドライブ。 - 前記インタフェースが、SATAインタフェースすなわちSerial Advanced Technology Att
achmentインタフェース、PCIeインタフェースすなわちPeripheral Component Interconne
ct expressインタフェース、eSATAインタフェースすなわちexternal Serial Advanced Te
chnology Attachmentインタフェース、PATAインタフェースすなわちParallel Advanced T
echnology Attachmentインタフェース、USBインタフェースすなわちUniversal Serial Bu
sインタフェース、またはSASインタフェースすなわちSerial Attached SCSIインタフェー
スのいずれかである、請求項1から4のいずれか一項に記載のソリッドステートドライブ。 - メインエンクロージャと、
ソリッドステートドライブと、
提供手段と
を備え、
前記ソリッドステートドライブは、
ハウジングと、
前記ハウジング内にあり、かつ互いの反対側にある第1の表面および第2の表面を有する
回路基板と、
前記第1の表面に取り付けられた複数の半導体チップの積み重なりであって、前記複数
の半導体チップの積み重なりのそれぞれがインタフェースチップと1つ以上のメモリチッ
プとを含み、前記複数の半導体チップの積み重なりのそれぞれが樹脂の中に実質的に封止
されている、複数の半導体チップの積み重なりと、
前記ハウジング内にあり、かつ前記複数の半導体チップの積み重なりの複数の前記イン
タフェースチップの間での直列相互接続を介して前記複数の半導体チップの積み重なりと
通信するコントローラであって、前記コントローラが前記ソリッドステートドライブ内で
処理するための信号を受信するインタフェースを含む、コントローラと
を含み、
前記提供手段は、
前記信号を前記インタフェースに提供する手段であって、前記ソリッドステートドライ
ブおよび前記提供手段の両方が前記メインエンクロージャ内にある、コンピュータシステ
ム。 - 前記コンピュータシステムがデスクトップコンピュータである、請求項11に記載のコン
ピュータシステム。 - 前記コンピュータシステムがラップトップである、請求項11に記載のコンピュータシス
テム。 - 前記コンピュータシステムがネットブックである、請求項11に記載のコンピュータシス
テム。 - 前記コンピュータシステムがタブレットPCである、請求項11に記載のコンピュータシス
テム。 - 前記コンピュータシステムが移動体電子通信デバイスである、請求項11に記載のコンピ
ュータシステム。 - 前記提供手段が、I/Oコントローラハブ、メモリコントローラハブおよび少なくとも1つ
のバスを含む、請求項11から16のいずれか一項に記載のコンピュータシステム。 - 前記コントローラが、前記回路基板に物理的に固定して接合している、請求項11から16
のいずれか一項に記載のコンピュータシステム。 - ソリッドステートドライブであって、
互いの反対側にある第1の表面および第2の表面を有する回路基板と、
前記回路基板を収容し、コンピュータのベイに挿入するに適した大きさのハウジングと
、
前記回路基板の前記第1の表面に取り付けられた複数の半導体チップの積み重なりであ
って、前記複数の半導体チップの積み重なりのそれぞれがインタフェースチップと1つ以
上のメモリチップとを含み、前記複数の半導体チップの積み重なりのそれぞれが樹脂の中
に実質的に封止されている、複数の半導体チップの積み重なりと、
前記複数の半導体チップの積み重なりの複数の前記インタフェースチップの間での直列
相互接続を介して前記複数の半導体チップの積み重なりと通信するコントローラであって
、前記コントローラがコンピュータシステムから当該ソリッドステートドライブ内で処理
するための信号を受信するインタフェースを含む、コントローラと
を備えるソリッドステートドライブ。 - ソリッドステートドライブであって、
互いの反対側にある第1の表面および第2の表面を有する回路基板と、
前記第1の表面に取り付けられた複数の半導体チップの積み重なりであって、前記複数
の半導体チップの積み重なりのそれぞれがインタフェースチップと1つ以上のメモリチッ
プとを含み、前記複数の半導体チップの積み重なりのそれぞれが樹脂の中に実質的にグラ
ブトップで封止されている、複数の半導体チップの積み重なりと、
ケーブルの一方の端部に接続するように構成され、前記ソリッドステートドライブ内の
インターフェイスコネクタと、
前記複数の半導体チップの積み重なりの複数の前記インタフェースチップの間での直列
相互接続を介して前記複数の半導体チップの積み重なりと通信するコントローラであって
、前記コントローラがコンピュータシステムから前記インターフェイスコネクタを介して
当該ソリッドステートドライブ内で処理するための信号を受信するインタフェースを含む
、コントローラと
を備えるソリッドステートドライブ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11415408P | 2008-11-13 | 2008-11-13 | |
US61/114,154 | 2008-11-13 | ||
US12/367,056 US8472199B2 (en) | 2008-11-13 | 2009-02-06 | System including a plurality of encapsulated semiconductor chips |
US12/367,056 | 2009-02-06 | ||
PCT/CA2009/001638 WO2010054478A1 (en) | 2008-11-13 | 2009-11-13 | Solid state drive or other storage apparatus that includes a plurality of encapsulated semiconductor chips |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012508968A JP2012508968A (ja) | 2012-04-12 |
JP2012508968A5 JP2012508968A5 (ja) | 2012-12-27 |
JP5792624B2 true JP5792624B2 (ja) | 2015-10-14 |
Family
ID=42165019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011535844A Expired - Fee Related JP5792624B2 (ja) | 2008-11-13 | 2009-11-13 | 封止された複数の半導体チップを備えたソリッドステートドライブまたは他の記憶装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8472199B2 (ja) |
EP (1) | EP2347442A4 (ja) |
JP (1) | JP5792624B2 (ja) |
KR (1) | KR20110099217A (ja) |
CN (1) | CN102210022B (ja) |
WO (1) | WO2010054478A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8472199B2 (en) | 2008-11-13 | 2013-06-25 | Mosaid Technologies Incorporated | System including a plurality of encapsulated semiconductor chips |
US8604593B2 (en) * | 2009-10-19 | 2013-12-10 | Mosaid Technologies Incorporated | Reconfiguring through silicon vias in stacked multi-die packages |
CN102439718B (zh) * | 2010-06-25 | 2015-07-01 | 新普力科技有限公司 | 数据存储装置 |
US9659600B2 (en) | 2014-07-10 | 2017-05-23 | Sap Se | Filter customization for search facilitation |
JP5396415B2 (ja) | 2011-02-23 | 2014-01-22 | 株式会社東芝 | 半導体装置 |
TWI581267B (zh) * | 2011-11-02 | 2017-05-01 | 諾瓦晶片加拿大公司 | 快閃記憶體模組及記憶體子系統 |
US9128662B2 (en) * | 2011-12-23 | 2015-09-08 | Novachips Canada Inc. | Solid state drive memory system |
US9740439B2 (en) * | 2011-12-23 | 2017-08-22 | International Business Machines Corporation | Solid-state storage management |
US20140036435A1 (en) * | 2012-08-03 | 2014-02-06 | Mosaid Technologies Incorporated | Storage system having a heatsink |
KR101212253B1 (ko) * | 2012-08-16 | 2012-12-13 | 주식회사 유니테스트 | 리드라이버(Redrivr)를 이용하는 DUT(Devic unde Test) 테스트 장치 |
KR102046985B1 (ko) * | 2012-11-26 | 2019-12-03 | 삼성전자 주식회사 | 보조 기억 장치 |
KR102084553B1 (ko) | 2013-01-03 | 2020-03-04 | 삼성전자주식회사 | 메모리 시스템 |
US9320169B2 (en) * | 2013-07-03 | 2016-04-19 | Dell Products, L.P. | Modular dense storage array |
KR102144367B1 (ko) * | 2013-10-22 | 2020-08-14 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
KR102282191B1 (ko) | 2014-06-05 | 2021-07-27 | 삼성전자 주식회사 | 인쇄 회로 기판, 반도체 패키지 및 반도체 패키지의 제조방법 |
JP5902335B2 (ja) * | 2015-03-27 | 2016-04-13 | 株式会社東芝 | 半導体メモリ装置およびシステム |
KR102387973B1 (ko) | 2015-12-01 | 2022-04-19 | 삼성전자주식회사 | 이중화 저장 장치, 그것을 포함한 서버 시스템 및 그것의 동작 방법 |
US10714148B2 (en) * | 2015-12-30 | 2020-07-14 | Shenzhen Longsys Electronics Co., Ltd. | SSD storage module, SSD component, and SSD |
US10388329B2 (en) * | 2015-12-30 | 2019-08-20 | Shenzhen Longsys Electronics Co., Ltd. | SSD storage module, SSD component, and SSD |
JP5940752B1 (ja) * | 2016-03-01 | 2016-06-29 | 株式会社東芝 | 半導体メモリ装置 |
JP6109995B2 (ja) * | 2016-05-16 | 2017-04-05 | 株式会社東芝 | 半導体記憶装置 |
US10381327B2 (en) * | 2016-10-06 | 2019-08-13 | Sandisk Technologies Llc | Non-volatile memory system with wide I/O memory die |
CN109271147B (zh) * | 2018-09-13 | 2021-09-28 | 无锡车联天下信息技术有限公司 | 一种智能座舱系统分层设计方法及智能座舱系统 |
Family Cites Families (146)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0339154B1 (en) * | 1988-04-26 | 1994-11-17 | Citizen Watch Co. Ltd. | Memory card |
US4992850A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded simm module |
US5099309A (en) | 1990-04-30 | 1992-03-24 | International Business Machines Corporation | Three-dimensional memory card structure with internal direct chip attachment |
US5663901A (en) * | 1991-04-11 | 1997-09-02 | Sandisk Corporation | Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems |
US5280193A (en) * | 1992-05-04 | 1994-01-18 | Lin Paul T | Repairable semiconductor multi-package module having individualized package bodies on a PC board substrate |
JPH0798620A (ja) * | 1992-11-13 | 1995-04-11 | Seiko Epson Corp | 電子装置およびこれを用いたコンピュータ |
US5272664A (en) * | 1993-04-21 | 1993-12-21 | Silicon Graphics, Inc. | High memory capacity DRAM SIMM |
US5355016A (en) * | 1993-05-03 | 1994-10-11 | Motorola, Inc. | Shielded EPROM package |
US6835898B2 (en) * | 1993-11-16 | 2004-12-28 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
US5436203A (en) * | 1994-07-05 | 1995-07-25 | Motorola, Inc. | Shielded liquid encapsulated semiconductor device and method for making the same |
US5807791A (en) * | 1995-02-22 | 1998-09-15 | International Business Machines Corporation | Methods for fabricating multichip semiconductor structures with consolidated circuitry and programmable ESD protection for input/output nodes |
US5686730A (en) * | 1995-05-15 | 1997-11-11 | Silicon Graphics, Inc. | Dimm pair with data memory and state memory |
IN188196B (ja) * | 1995-05-15 | 2002-08-31 | Silicon Graphics Inc | |
US5729433A (en) * | 1996-01-30 | 1998-03-17 | Micromodule Systems, Inc. | Multiple chip module assembly for top of mother board |
US5637916A (en) * | 1996-02-02 | 1997-06-10 | National Semiconductor Corporation | Carrier based IC packaging arrangement |
US6072236A (en) * | 1996-03-07 | 2000-06-06 | Micron Technology, Inc. | Micromachined chip scale package |
US20040061220A1 (en) * | 1996-03-22 | 2004-04-01 | Chuichi Miyazaki | Semiconductor device and manufacturing method thereof |
JP2891665B2 (ja) * | 1996-03-22 | 1999-05-17 | 株式会社日立製作所 | 半導体集積回路装置およびその製造方法 |
US5866953A (en) * | 1996-05-24 | 1999-02-02 | Micron Technology, Inc. | Packaged die on PCB with heat sink encapsulant |
JPH1131780A (ja) * | 1997-05-13 | 1999-02-02 | T I F:Kk | メモリモジュールの矯正方法 |
US6067594A (en) * | 1997-09-26 | 2000-05-23 | Rambus, Inc. | High frequency bus system |
US6573609B2 (en) * | 1997-11-25 | 2003-06-03 | Tessera, Inc. | Microelectronic component with rigid interposer |
US6108228A (en) * | 1997-12-02 | 2000-08-22 | Micron Technology, Inc. | Quad in-line memory module |
US5956233A (en) * | 1997-12-19 | 1999-09-21 | Texas Instruments Incorporated | High density single inline memory module |
US6040622A (en) * | 1998-06-11 | 2000-03-21 | Sandisk Corporation | Semiconductor package using terminals formed on a conductive layer of a circuit board |
US6100804A (en) * | 1998-10-29 | 2000-08-08 | Intecmec Ip Corp. | Radio frequency identification system |
US6376769B1 (en) * | 1999-05-18 | 2002-04-23 | Amerasia International Technology, Inc. | High-density electronic package, and method for making same |
US6387732B1 (en) * | 1999-06-18 | 2002-05-14 | Micron Technology, Inc. | Methods of attaching a semiconductor chip to a leadframe with a footprint of about the same size as the chip and packages formed thereby |
US20040015079A1 (en) * | 1999-06-22 | 2004-01-22 | Teratech Corporation | Ultrasound probe with integrated electronics |
US7576990B2 (en) * | 2000-01-06 | 2009-08-18 | Super Talent Electronics, Inc. | Thin hard drive with 2-piece-casing and ground pin standoff to reduce ESD damage to stacked PCBA's |
US7649742B2 (en) * | 2000-01-06 | 2010-01-19 | Super Talent Electronics, Inc. | Thin flash-hard-drive with two-piece casing |
US7941916B1 (en) * | 2004-07-08 | 2011-05-17 | Super Talent Electronics, Inc. | Manufacturing method for memory card |
JP2001053243A (ja) * | 1999-08-06 | 2001-02-23 | Hitachi Ltd | 半導体記憶装置とメモリモジュール |
JP2001175834A (ja) * | 1999-12-17 | 2001-06-29 | Toshiba Corp | カード型電子機器およびその製造方法 |
US7535088B2 (en) * | 2000-01-06 | 2009-05-19 | Super Talent Electronics, Inc. | Secure-digital (SD) flash card with slanted asymmetric circuit board |
KR100335717B1 (ko) * | 2000-02-18 | 2002-05-08 | 윤종용 | 고용량 메모리 카드 |
US6384473B1 (en) * | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
EP1174881A1 (en) * | 2000-06-22 | 2002-01-23 | STMicroelectronics S.r.l. | Integrated circuit for memory card and memory card using the circuit |
JP3615126B2 (ja) | 2000-07-11 | 2005-01-26 | 寛治 大塚 | 半導体回路装置 |
US6757751B1 (en) * | 2000-08-11 | 2004-06-29 | Harrison Gene | High-speed, multiple-bank, stacked, and PCB-mounted memory module |
US6820148B1 (en) * | 2000-08-17 | 2004-11-16 | Sandisk Corporation | Multiple removable non-volatile memory cards serially communicating with a host |
US6624005B1 (en) * | 2000-09-06 | 2003-09-23 | Amkor Technology, Inc. | Semiconductor memory cards and method of making same |
US6492726B1 (en) * | 2000-09-22 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnection |
TWI249712B (en) | 2001-02-28 | 2006-02-21 | Hitachi Ltd | Memory card and its manufacturing method |
SG95651A1 (en) * | 2001-05-21 | 2003-04-23 | Micron Technology Inc | Method for encapsulating intermediate conductive elements connecting a semiconductor die to a substrate and semiconductor devices so packaged |
DE10131939B4 (de) * | 2001-07-02 | 2014-12-11 | Qimonda Ag | Elektronische Leiterplatte mit mehreren bauartgleichen gehäusegefaßten Halbleiterspeichern |
JP4351819B2 (ja) * | 2001-12-19 | 2009-10-28 | 株式会社東芝 | 半導体装置及び不揮発性半導体記憶装置 |
US6981089B2 (en) * | 2001-12-31 | 2005-12-27 | Intel Corporation | Memory bus termination with memory unit having termination control |
US6913794B2 (en) * | 2002-01-14 | 2005-07-05 | Coherent, Inc. | Diode-laser curing of liquid epoxide encapsulants |
US6867500B2 (en) * | 2002-04-08 | 2005-03-15 | Micron Technology, Inc. | Multi-chip module and methods |
US6906415B2 (en) * | 2002-06-27 | 2005-06-14 | Micron Technology, Inc. | Semiconductor device assemblies and packages including multiple semiconductor devices and methods |
US6791168B1 (en) * | 2002-07-10 | 2004-09-14 | Micron Technology, Inc. | Semiconductor package with circuit side polymer layer and wafer level fabrication method |
JP4094370B2 (ja) * | 2002-07-31 | 2008-06-04 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
JP2004118511A (ja) * | 2002-09-26 | 2004-04-15 | Renesas Technology Corp | メモリカード及びその製造方法 |
US7249173B2 (en) * | 2002-10-25 | 2007-07-24 | Emulex Design & Manufacturing Corporation | Abstracted node discovery |
US7367503B2 (en) * | 2002-11-13 | 2008-05-06 | Sandisk Corporation | Universal non-volatile memory card used with various different standard cards containing a memory controller |
CN1216335C (zh) * | 2002-11-23 | 2005-08-24 | 董文明 | 机动车辆身份防伪装置及方法 |
US7308524B2 (en) | 2003-01-13 | 2007-12-11 | Silicon Pipe, Inc | Memory chain |
US7069370B2 (en) * | 2003-01-31 | 2006-06-27 | Toshiba Corporation | USB memory storage apparatus with integrated circuit in a connector |
US20040158978A1 (en) * | 2003-02-14 | 2004-08-19 | Lee Sang-Hyeop | Molding method and mold for encapsulating both sides of PCB module with wafer level package mounted PCB |
TW576549U (en) * | 2003-04-04 | 2004-02-11 | Advanced Semiconductor Eng | Multi-chip package combining wire-bonding and flip-chip configuration |
US7094074B2 (en) * | 2003-09-11 | 2006-08-22 | Super Talent Electronics, Inc. | Manufacturing methods for ultra-slim USB flash-memory card with supporting dividers or underside ribs |
US20050070138A1 (en) * | 2003-09-11 | 2005-03-31 | Super Talent Electronics Inc. | Slim USB Plug and Flash-Memory Card with Supporting Underside Ribs Engaging Socket Springs |
US7044802B2 (en) * | 2003-09-11 | 2006-05-16 | Super Talent Electronics, Inc. | USB flash-memory card with perimeter frame and covers that allow mounting of chips on both sides of a PCB |
US20050156333A1 (en) * | 2003-09-11 | 2005-07-21 | Super Talent Electronics Inc. | Narrow Universal-Serial-Bus (USB) Flash-Memory Card with Straight Sides using a Ball-Grid-Array (BGA) Chip |
US7213766B2 (en) * | 2003-11-17 | 2007-05-08 | Dpd Patent Trust Ltd | Multi-interface compact personal token apparatus and methods of use |
US7440286B2 (en) * | 2005-04-21 | 2008-10-21 | Super Talent Electronics, Inc. | Extended USB dual-personality card reader |
US7181584B2 (en) * | 2004-02-05 | 2007-02-20 | Micron Technology, Inc. | Dynamic command and/or address mirroring system and method for memory modules |
US7289386B2 (en) * | 2004-03-05 | 2007-10-30 | Netlist, Inc. | Memory module decoder |
US20070247800A1 (en) * | 2004-03-08 | 2007-10-25 | Originatic Llc | Assembly having a main unit and a mounting unit |
WO2005108487A1 (en) * | 2004-04-22 | 2005-11-17 | Henkel Corporation | Methods for improving the flux compatibility of underfill formulations |
US7492039B2 (en) * | 2004-08-19 | 2009-02-17 | Micron Technology, Inc. | Assemblies and multi-chip modules including stacked semiconductor dice having centrally located, wire bonded bond pads |
SG119234A1 (en) * | 2004-07-29 | 2006-02-28 | Micron Technology Inc | Assemblies including stacked semiconductor dice having centrally located wire bonded bond pads |
US7224595B2 (en) * | 2004-07-30 | 2007-05-29 | International Business Machines Corporation | 276-Pin buffered memory module with enhanced fault tolerance |
US7476105B2 (en) * | 2004-08-06 | 2009-01-13 | Super Talent Electronics, Inc. | Super-digital (SD) flash card with asymmetric circuit board and mechanical switch |
US7479039B2 (en) * | 2004-08-06 | 2009-01-20 | Super Talent Electronics, Inc. | Manufacturing process for a super-digital (SD) flash card with slanted asymmetric circuit board |
US8324725B2 (en) * | 2004-09-27 | 2012-12-04 | Formfactor, Inc. | Stacked die module |
US20060076694A1 (en) * | 2004-10-13 | 2006-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device package with concavity-containing encapsulation body to prevent device delamination and increase thermal-transferring efficiency |
US7869218B2 (en) * | 2004-11-16 | 2011-01-11 | Super Talent Electronics, Inc. | Light-weight solid state drive with rivet sets |
US7225537B2 (en) * | 2005-01-27 | 2007-06-05 | Cardxx, Inc. | Method for making memory cards and similar devices using isotropic thermoset materials with high quality exterior surfaces |
US7709943B2 (en) * | 2005-02-14 | 2010-05-04 | Daniel Michaels | Stacked ball grid array package module utilizing one or more interposer layers |
US20060255459A1 (en) * | 2005-05-11 | 2006-11-16 | Simon Muff | Stacked semiconductor memory device |
US7197676B2 (en) * | 2005-05-24 | 2007-03-27 | Kingston Technology Corp. | Loop-Back Memory-Module Extender Card for Self-Testing Fully-Buffered Memory Modules |
US7378301B2 (en) * | 2005-06-10 | 2008-05-27 | Kingston Technology Corporation | Method for molding a small form factor digital memory card |
US8253751B2 (en) * | 2005-06-30 | 2012-08-28 | Intel Corporation | Memory controller interface for micro-tiled memory access |
US7663214B2 (en) * | 2005-07-25 | 2010-02-16 | Kingston Technology Corporation | High-capacity memory card and method of making the same |
JP4886308B2 (ja) * | 2005-09-16 | 2012-02-29 | 株式会社東芝 | Usbメモリ装置 |
US7623354B2 (en) * | 2005-09-29 | 2009-11-24 | Kingston Technology Corporation | Folding USB drive |
US20070076502A1 (en) | 2005-09-30 | 2007-04-05 | Pyeon Hong B | Daisy chain cascading devices |
US7652922B2 (en) | 2005-09-30 | 2010-01-26 | Mosaid Technologies Incorporated | Multiple independent serial link memory |
US20070165457A1 (en) * | 2005-09-30 | 2007-07-19 | Jin-Ki Kim | Nonvolatile memory system |
US7747833B2 (en) | 2005-09-30 | 2010-06-29 | Mosaid Technologies Incorporated | Independent link and bank selection |
US7352058B2 (en) * | 2005-11-01 | 2008-04-01 | Sandisk Corporation | Methods for a multiple die integrated circuit package |
US7685392B2 (en) * | 2005-11-28 | 2010-03-23 | International Business Machines Corporation | Providing indeterminate read data latency in a memory system |
US7652892B2 (en) * | 2006-03-03 | 2010-01-26 | Kingston Technology Corporation | Waterproof USB drives and method of making |
US8364861B2 (en) | 2006-03-28 | 2013-01-29 | Mosaid Technologies Incorporated | Asynchronous ID generation |
US8335868B2 (en) | 2006-03-28 | 2012-12-18 | Mosaid Technologies Incorporated | Apparatus and method for establishing device identifiers for serially interconnected devices |
US8069328B2 (en) | 2006-03-28 | 2011-11-29 | Mosaid Technologies Incorporated | Daisy chain cascade configuration recognition technique |
JP4843447B2 (ja) * | 2006-03-31 | 2011-12-21 | 株式会社東芝 | 半導体装置とそれを用いたメモリカード |
US7292950B1 (en) * | 2006-05-08 | 2007-11-06 | Cray Inc. | Multiple error management mode memory module |
US7640386B2 (en) * | 2006-05-24 | 2009-12-29 | International Business Machines Corporation | Systems and methods for providing memory modules with multiple hub devices |
US7584336B2 (en) * | 2006-06-08 | 2009-09-01 | International Business Machines Corporation | Systems and methods for providing data modification operations in memory subsystems |
US8581381B2 (en) * | 2006-06-20 | 2013-11-12 | Broadcom Corporation | Integrated circuit (IC) package stacking and IC packages formed by same |
KR100828956B1 (ko) * | 2006-06-27 | 2008-05-13 | 하나 마이크론(주) | Usb 메모리 패키지 및 그 제조 방법 |
US7587559B2 (en) * | 2006-08-10 | 2009-09-08 | International Business Machines Corporation | Systems and methods for memory module power management |
US7613265B2 (en) * | 2006-09-05 | 2009-11-03 | International Business Machines Corporation | Systems, methods and computer program products for high speed data transfer using an external clock signal |
US20100025480A1 (en) * | 2006-09-27 | 2010-02-04 | Hirotaka Nishizawa | Ic card and ic card socket |
US20080082714A1 (en) * | 2006-09-29 | 2008-04-03 | Nasa Hq's. | Systems, methods and apparatus for flash drive |
US7870459B2 (en) * | 2006-10-23 | 2011-01-11 | International Business Machines Corporation | High density high reliability memory module with power gating and a fault tolerant address and command bus |
US7839672B1 (en) * | 2006-12-18 | 2010-11-23 | Marvell International Ltd. | Phase change memory array circuits and methods of manufacture |
US7721140B2 (en) * | 2007-01-02 | 2010-05-18 | International Business Machines Corporation | Systems and methods for improving serviceability of a memory system |
US7949931B2 (en) * | 2007-01-02 | 2011-05-24 | International Business Machines Corporation | Systems and methods for error detection in a memory system |
US7603526B2 (en) * | 2007-01-29 | 2009-10-13 | International Business Machines Corporation | Systems and methods for providing dynamic memory pre-fetch |
US7624225B2 (en) * | 2007-03-22 | 2009-11-24 | International Business Machines Corporation | System and method for providing synchronous dynamic random access memory (SDRAM) mode register shadowing in a memory system |
US7644216B2 (en) * | 2007-04-16 | 2010-01-05 | International Business Machines Corporation | System and method for providing an adapter for re-use of legacy DIMMS in a fully buffered memory environment |
US7979616B2 (en) * | 2007-06-22 | 2011-07-12 | International Business Machines Corporation | System and method for providing a configurable command sequence for a memory interface device |
US7624244B2 (en) * | 2007-06-22 | 2009-11-24 | International Business Machines Corporation | System for providing a slow command decode over an untrained high-speed interface |
US8041990B2 (en) * | 2007-06-28 | 2011-10-18 | International Business Machines Corporation | System and method for error correction and detection in a memory system |
US7984329B2 (en) * | 2007-09-04 | 2011-07-19 | International Business Machines Corporation | System and method for providing DRAM device-level repair via address remappings external to the device |
US7593288B2 (en) * | 2007-12-19 | 2009-09-22 | International Business Machines Corporation | System for providing read clock sharing between memory devices |
US8399973B2 (en) * | 2007-12-20 | 2013-03-19 | Mosaid Technologies Incorporated | Data storage and stackable configurations |
JP2009157628A (ja) * | 2007-12-26 | 2009-07-16 | Toshiba Corp | 半導体メモリカード |
US20090172235A1 (en) * | 2007-12-27 | 2009-07-02 | Mei Yan | Megasim card adapter |
US8947883B2 (en) * | 2007-12-27 | 2015-02-03 | Sandisk Technologies Inc. | Low profile wire bonded USB device |
JP5207868B2 (ja) * | 2008-02-08 | 2013-06-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8030746B2 (en) * | 2008-02-08 | 2011-10-04 | Infineon Technologies Ag | Integrated circuit package |
US7797578B2 (en) * | 2008-02-25 | 2010-09-14 | Kingston Technology Corp. | Fault diagnosis of serially-addressed memory chips on a test adaptor board to a middle memory-module slot on a PC motherboard |
US7797583B2 (en) * | 2008-02-25 | 2010-09-14 | Kingston Technology Corp. | Fault diagnosis of serially-addressed memory modules on a PC motherboard |
US8015426B2 (en) * | 2008-03-27 | 2011-09-06 | International Business Machines Corporation | System and method for providing voltage power gating |
US8004841B2 (en) * | 2008-05-06 | 2011-08-23 | International Business Machines Corporation | Method and apparatus of water cooling several parallel circuit cards each containing several chip packages |
US20100005206A1 (en) * | 2008-07-01 | 2010-01-07 | International Business Machines Corporation | Automatic read data flow control in a cascade interconnect memory system |
US8201069B2 (en) * | 2008-07-01 | 2012-06-12 | International Business Machines Corporation | Cyclical redundancy code for use in a high-speed serial link |
US20100005212A1 (en) * | 2008-07-01 | 2010-01-07 | International Business Machines Corporation | Providing a variable frame format protocol in a cascade interconnected memory system |
US20100005220A1 (en) * | 2008-07-01 | 2010-01-07 | International Business Machines Corporation | 276-pin buffered memory module with enhanced memory system interconnect and features |
EP2313891B1 (en) * | 2008-08-08 | 2016-04-27 | Hewlett-Packard Development Company, L.P. | Independently controlled virtual memory devices in memory modules |
JP5289569B2 (ja) * | 2008-08-08 | 2013-09-11 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | 標準メモリモジュールとピン互換性のあるメモリモジュール内における独立制御可能且つ再構成可能な仮想メモリデバイス |
US10236032B2 (en) | 2008-09-18 | 2019-03-19 | Novachips Canada Inc. | Mass data storage system with non-volatile memory modules |
US20100081237A1 (en) * | 2008-09-30 | 2010-04-01 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Integrated Circuit Assemblies and Methods for Encapsulating a Semiconductor Device |
US7957173B2 (en) | 2008-10-14 | 2011-06-07 | Mosaid Technologies Incorporated | Composite memory having a bridging device for connecting discrete memory devices to a system |
US8134852B2 (en) | 2008-10-14 | 2012-03-13 | Mosaid Technologies Incorporated | Bridge device architecture for connecting discrete memory devices to a system |
US8549209B2 (en) | 2008-11-04 | 2013-10-01 | Mosaid Technologies Incorporated | Bridging device having a configurable virtual page size |
US20100115172A1 (en) | 2008-11-04 | 2010-05-06 | Mosaid Technologies Incorporated | Bridge device having a virtual page buffer |
US8472199B2 (en) | 2008-11-13 | 2013-06-25 | Mosaid Technologies Incorporated | System including a plurality of encapsulated semiconductor chips |
US8194481B2 (en) | 2008-12-18 | 2012-06-05 | Mosaid Technologies Incorporated | Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation |
US8037235B2 (en) | 2008-12-18 | 2011-10-11 | Mosaid Technologies Incorporated | Device and method for transferring data to a non-volatile memory device |
JP2011150416A (ja) * | 2010-01-19 | 2011-08-04 | Toshiba Corp | 半導体メモリ装置 |
-
2009
- 2009-02-06 US US12/367,056 patent/US8472199B2/en not_active Expired - Fee Related
- 2009-11-13 EP EP09825687.8A patent/EP2347442A4/en not_active Withdrawn
- 2009-11-13 WO PCT/CA2009/001638 patent/WO2010054478A1/en active Application Filing
- 2009-11-13 KR KR1020117010009A patent/KR20110099217A/ko not_active Application Discontinuation
- 2009-11-13 CN CN200980144853.XA patent/CN102210022B/zh not_active Expired - Fee Related
- 2009-11-13 JP JP2011535844A patent/JP5792624B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-14 US US13/917,728 patent/US8908378B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20110099217A (ko) | 2011-09-07 |
US8908378B2 (en) | 2014-12-09 |
JP2012508968A (ja) | 2012-04-12 |
US20130271910A1 (en) | 2013-10-17 |
CN102210022B (zh) | 2014-12-24 |
CN102210022A (zh) | 2011-10-05 |
WO2010054478A1 (en) | 2010-05-20 |
US8472199B2 (en) | 2013-06-25 |
US20100118482A1 (en) | 2010-05-13 |
EP2347442A4 (en) | 2017-01-04 |
EP2347442A1 (en) | 2011-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5792624B2 (ja) | 封止された複数の半導体チップを備えたソリッドステートドライブまたは他の記憶装置 | |
US11658154B2 (en) | Memory devices with controllers under memory packages and associated systems and methods | |
US9183890B2 (en) | Stacked semiconductor device and method of manufacturing the same | |
TWI619227B (zh) | 用於高速低剖面記憶體封裝及插腳輸出設計的系統及方法 | |
JP5610293B2 (ja) | チップ上にネットワークを有するメモリ・デバイスの方法、装置、及びシステム | |
US8838885B2 (en) | Solid state drive packages and related methods and systems | |
US9934825B2 (en) | Semiconductor device and electronic device | |
US8848392B2 (en) | Co-support module and microelectronic assembly | |
US8787034B2 (en) | Co-support system and microelectronic assembly | |
US8848391B2 (en) | Co-support component and microelectronic assembly | |
US20150331767A1 (en) | Stacked Memory Device Control | |
KR20100105147A (ko) | 멀티 칩 패키지 및 관련된 장치 | |
US20130088838A1 (en) | Die package, method of manufacturing the same, and systems including the same | |
KR102032887B1 (ko) | 반도체 패키지 및 반도체 패키지의 라우팅 방법 | |
US12021061B2 (en) | Packaged memory device with flip chip and wire bond dies | |
US20140189227A1 (en) | Memory device and a memory module having the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121107 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140303 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140922 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20140926 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141209 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141216 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20150129 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20150209 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150226 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20150304 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150312 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150519 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150708 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5792624 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |