JP5764846B2 - 高電圧垂直トランジスタのためのセグメントピラーレイアウト - Google Patents
高電圧垂直トランジスタのためのセグメントピラーレイアウト Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 28
- 210000000746 body region Anatomy 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000000638 solvent extraction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H01L29/42312—Gate electrodes for field effect devices
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Description
前記トランジスタセグメントの各々が、
前記ダイを通って垂直方向に延びる拡張したドレイン領域を含む半導体材料のピラーと、
前記ピラーの対向する側にそれぞれ配置された第1の誘電領域及び第2の誘電領域と、を含み、
前記第1の誘電領域は横方向において前記ピラーにより囲まれ、前記第2の誘電領域は横方向において前記ピラーを囲み、
さらに、前記トランジスタセグメントの各々は、
前記第1の誘電領域及び前記第2の誘電領域のそれぞれに配置された第1のフィールドプレート及び第2のフィールドプレートと、を含み、
前記複数のトランジスタセグメントは、複数のセクションに分けられており、
該複数のセクションにおける第1のセクションは、前記第2の横方向において並列関係に配置されたトランジスタセグメントの第1の行を含み、
前記複数のセクションにおける第2のセクションは、前記第2の横方向において並列関係に配置されたトランジスタセグメントの第2の行を含む、ことを特徴とする。
前記トランジスタセグメントの各々が、
前記ダイを通って垂直方向に延びる拡張したドレイン領域を含む半導体材料のピラーと、
前記ピラーの対向する側にそれぞれ配置された第1の誘電領域及び第2の誘電領域と、を含み、
前記第1の誘電領域は横方向において前記ピラーにより囲まれ、前記第2の誘電領域は横方向において前記ピラーを囲み、
さらに、前記トランジスタセグメントの各々は、
前記第1の誘電領域及び前記第2の誘電領域のそれぞれに配置された第1のフィールドプレート及び第2のフィールドプレートと、を含み、
前記複数のトランジスタセグメントは、複数のセクションに分けられており、
第1のセクションにおけるトランジスタセグメントは、第2のセクションにおけるトランジスタセグメントに対して前記第1の横方向においてシフトされ、
前記第1のセクションの行における前記トランジスタセグメントの各々は、前記第2のセクションにおける1対のトランジスタセグメントにより分離されており、該1対のトランジスタセグメントは、端と端とが接した関係により配置されており、
前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントのうち交互に選択されたトランジスタセグメントの前記第2の誘電領域が併合されている、ことを特徴とする。
該半導体ダイを実質的に覆うように設けられた複数のトランジスタセグメントであって、各々が第1の横方向に延びる長さ及び第2の横方向に延びる幅を有し、かつ、前記長さが前記幅の少なくとも20倍以上の大きさとなっている、複数のトランジスタセグメントと、を具備し、
前記トランジスタセグメントの各々が、
前記半導体ダイを通って垂直方向に延びる拡張したドレイン領域を含む半導体材料のピラーであって、前記第1の横方向及び前記第2の横方向に延びて、連続したレーストラック形状のリング又は楕円を形成するピラーと、
前記ピラーの対向する側にそれぞれ配置された第1の誘電領域及び第2の誘電領域と、を含み、
前記第1の誘電領域が横方向において前記ピラーにより囲まれ、前記第2の誘電領域が横方向において前記ピラーを囲み、
さらに、前記トランジスタセグメントの各々が、
前記第1の誘電領域及び前記第2の誘電領域のそれぞれに配置された第1のフィールドプレート及び第2のフィールドプレートと、を含み、
前記複数のトランジスタセグメントが、前記半導体ダイにおける対応するエリアに配置された2つ又はそれ以上のセクションに分割されている、ことを特徴とする。
該半導体ダイにおける第1のエリアに配置されたトランジスタセグメントの第1のセクションと、
前記半導体ダイの前記第1のエリアに隣接した第2のエリアに配置されたトランジスタセグメントの第2のセクションと、を具備し、
前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントの各々が、
前記ダイの上面の近くに配置されたソース領域と該ソース領域の下に配置された拡張したドレイン領域とを有する、垂直方向に延びる半導体材料のピラーであって、前記第1の横方向及び前記第2の横方向に延びて、連続したレーストラック状のリング又は楕円を形成するピラーと、
該ピラーの対向する側にそれぞれ配置された第1の誘電領域及び第2の誘電領域と、を含み、
前記第1の誘電領域が横方向において前記ピラーにより囲まれ、前記第2の誘電領域が横方向において前記ピラーを囲み、
さらに、前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントの各々は、前記第1の誘電領域及び前記第2の誘電領域のそれぞれに配置された第1のフィールドプレート及び第2のフィールドプレートと、を含み、
前記第1のセクション及び前記第2のセクションにおける隣接するトランジスタセグメントの対の前記第2のフィールドプレートが、それぞれ分離されているか、又は、部分的に合併している、ことを特徴とする。
17 シリコンピラー
18a、18b ゲート部材
19a、19b フィールドプレート
21 半導体ダイ
30a 上側トランジスタセクション
30b 下側トランジスタセクション
32 ダミーシリコンピラー
Claims (16)
- 各々が、ダイ上に設けられ、第1の横方向に延びる長さ及び第2の横方向に延びる幅を備えたレーストラック状を有する複数のトランジスタセグメントを具備する垂直トランジスタ装置であって、
前記トランジスタセグメントの各々が、
前記垂直の方向に延びる拡張したドレイン領域を含む半導体材料のピラーと、
前記ピラーの対向する側にそれぞれ配置された第1の誘電領域及び第2の誘電領域と、を含み、
前記第1の誘電領域は横方向において前記ピラーにより囲まれ、前記第2の誘電領域は横方向において前記ピラーを囲み、
さらに、前記トランジスタセグメントの各々は、
前記第1の誘電領域及び前記第2の誘電領域のそれぞれに配置された第1のフィールドプレート及び第2のフィールドプレートと、を含み、
前記複数のトランジスタセグメントは、複数のセクションに分けられており、
第1のセクションにおけるトランジスタセグメントは、第2のセクションにおけるトランジスタセグメントに対して前記第1の横方向においてシフトされ、
トランジスセグメントの前記第1のセクションは前記第2の横方向に延びる分離したトランジスタセグメントの行を含み、
前記第1のセクションの行における前記トランジスタセグメントの各々は、前記第2のセクションを形成する1対のトランジスタセグメントにより前記第2の横方向で分離されており、該1対のトランジスタセグメントは、端と端とが接した関係により隣接して配置されており、
前記第1のセクションにおける前記トランジスタセグメントの前記第2の誘電領域が、前記第2のセクションにおける隣接するトランジスタセグメントの前記第2の誘電領域と合体又は重なり合わされている、ことを特徴とする垂直トランジスタ装置。 - 前記ピラーが、更に、前記ピラーの上面の近くに配置されたソース領域と、前記拡張したドレイン領域から前記ソース領域を垂直方向に分離するボディ領域と、を含む、請求項1に記載の装置。
- 前記ボディ領域に隣接する前記第1の誘電領域及び第2の誘電領域内に配置されたゲートを更に具備し、前記ゲートが、前記ボディ領域、前記第1のフィールドプレート及び前記第2のフィールドプレートから絶縁されている、請求項2に記載の装置。
- 前記第1のセクションにおける前記トランジスタセグメントが、前記第2のセクションにおける前記トランジスタセグメントに対して前記第1の横方向において前記長さのある割合だけシフトされており、前記長さのある割合が前記長さの0パーセントより大きく100パーセントより小さいで範囲である、請求項1に記載の装置。
- 前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントの前記第2のフィールドプレートが、前記第1の横方向において実質的な長さに沿って側部で共通部材を共有する、請求項1に記載の装置。
- 前記ピラーが前記第1の横方向及び前記第2の横方向に延びてレーストラック状のリング又は楕円を形成する、請求項1に記載の装置。
- 前記第1のフィールドプレート及び前記第2のフィールドプレートが、前記拡張したドレイン領域から完全に絶縁されており、前記第1のフィールドプレートが横方向において前記ピラーによって囲まれ、前記第2のフィールドプレートが横方向において前記ピラーを囲む、請求項1に記載の装置。
- 前記ボディ領域に隣接する前記ピラーの上部の近くにある前記第1の誘電領域及び前記第2の誘電領域にそれぞれ配置された第1のゲート部材及び第2のゲート部材を含むトレンチゲート構造を更に具備する、請求項2に記載の装置。
- 前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントの前記長さと前記幅との比が、30〜80の範囲内にある、請求項1に記載の装置。
- 前記複数のセクションが、前記ダイの幅及び長さの全体にわたって延びる、請求項1に記載の装置。
- 半導体ダイの上に作製されたトランジスタであって、
該半導体ダイにおける第1のエリアに配置されたトランジスタセグメントの第1のセクションであって、前記第1のセクションの前記トランジスタセクションの各々が第1の横方向に延びる長さと第2の横方向に延びる幅とを有するレーストラック状を有している、第1のセクションと、
前記半導体ダイの前記第1のエリアに隣接した第2のエリアに配置されたトランジスタセグメントの第2のセクションであって、前記第2のセクションの前記トランジスタセクションの各々が第1の横方向に延びる長さと第2の横方向に延びる幅とを有するレーストラック状を有している、第2のセクションと、
を具備し
前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントの各々が、
前記ダイの上面の近くに配置されたソース領域と該ソース領域の下に配置された拡張したドレイン領域とを有する、垂直方向に延びる半導体材料のピラーであって、前記第1の横方向及び前記第2の横方向に延びて、連続したレーストラック状のリング又は楕円を形成するピラーと、
該ピラーの対向する側にそれぞれ配置された第1の誘電領域及び第2の誘電領域と、
を含み、
前記第1の誘電領域が横方向において前記ピラーにより囲まれ、前記第2の誘電領域が横方向において前記ピラーを囲み、
さらに、前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントの各々は、前記第1の誘電領域及び前記第2の誘電領域のそれぞれに配置された第1のフィールドプレート及び第2のフィールドプレートと、を含み、
前記第1のセクション及び前記第2のセクションにおける隣接するトランジスタセグメントの対の前記第2のフィールドプレートが、側部で部分的に共通部材を共有しており、 前記第1のセクションの前記トランジスタセグメントは、前記第2のセクションの前記トランジスタセグメントに対して前記第1の方向に前記長さのある割合だけシフトされており、前記長さのある割合が前記長さの0パーセントより大きく100パーセントより小さいで範囲である、ことを特徴とするトランジスタ。 - 前記第1のセクション及び前記第2のセクションにおける隣接するトランジスタセグメントの対の前記第2のフィールドプレートが、各セクションの間に分離されたダミーピラーが形成されるようにして、併合されることを特徴とする請求項11に記載のトランジスタ。
- 前記第1のセクションにおけるトランジスタセグメントが、前記第2のセクションにおけるトランジスタセグメントに対して前記第1の横方向において前記長さの1/2だけシフトされている、請求項11に記載のトランジスタ。
- 前記第1のセクション及び前記第2のセクションにおけるトランジスタセグメントの第2のフィールドプレートが、前記第1の横方向において実質的な長さに沿って側部で共通部材を共有している、請求項13に記載のトランジスタ。
- 各トランジスタセグメントが、更に、
前記ソース領域及び前記拡張したドレイン領域を垂直方向に分離するボディ領域と、
該ボディ領域に隣接する前記ピラーの上部近くにある前記第1の誘電領域及び前記第2の誘電領域にそれぞれ配置された第1のゲート部材及び第2のゲート部材を含むトレンチゲート構造と、
を含む、請求項11に記載のトランジスタ。 - 前記第1のセクション及び前記第2のセクションにおける前記トランジスタセグメントの前記長さと前記幅との比が、30〜80の範囲内にある、請求項13に記載のトランジスタ。
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-
2007
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- 2007-09-04 EP EP12180878A patent/EP2549540A3/en not_active Withdrawn
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- 2008-02-18 CN CN201110153406.XA patent/CN102222696B/zh not_active Expired - Fee Related
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EP1959496A2 (en) | 2008-08-20 |
JP2013080983A (ja) | 2013-05-02 |
CN102222696A (zh) | 2011-10-19 |
JP2008205461A (ja) | 2008-09-04 |
CN102222696B (zh) | 2014-07-09 |
US20140042533A1 (en) | 2014-02-13 |
US20090273023A1 (en) | 2009-11-05 |
US20090134457A1 (en) | 2009-05-28 |
US8552493B2 (en) | 2013-10-08 |
US7557406B2 (en) | 2009-07-07 |
US20080197417A1 (en) | 2008-08-21 |
US7816731B2 (en) | 2010-10-19 |
JP2013080984A (ja) | 2013-05-02 |
JP5648191B2 (ja) | 2015-01-07 |
EP2549540A2 (en) | 2013-01-23 |
CN101246908A (zh) | 2008-08-20 |
CN101246908B (zh) | 2011-07-20 |
EP2549540A3 (en) | 2013-02-20 |
EP1959496A3 (en) | 2009-04-22 |
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