JP5669254B2 - センサ、半導体基板、および半導体基板の製造方法 - Google Patents
センサ、半導体基板、および半導体基板の製造方法 Download PDFInfo
- Publication number
- JP5669254B2 JP5669254B2 JP2010128368A JP2010128368A JP5669254B2 JP 5669254 B2 JP5669254 B2 JP 5669254B2 JP 2010128368 A JP2010128368 A JP 2010128368A JP 2010128368 A JP2010128368 A JP 2010128368A JP 5669254 B2 JP5669254 B2 JP 5669254B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- seed body
- base substrate
- photothermal
- photothermal absorber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 218
- 239000004065 semiconductor Substances 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000006096 absorbing agent Substances 0.000 claims description 241
- 239000013078 crystal Substances 0.000 claims description 111
- 239000003112 inhibitor Substances 0.000 claims description 85
- 239000012535 impurity Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000000969 carrier Substances 0.000 claims description 11
- 230000006798 recombination Effects 0.000 claims description 11
- 238000005215 recombination Methods 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 52
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 45
- 230000003287 optical effect Effects 0.000 description 26
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 22
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 20
- 238000002161 passivation Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 125000004429 atom Chemical group 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 13
- 238000000137 annealing Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 238000005136 cathodoluminescence Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910005898 GeSn Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Recrystallisation Techniques (AREA)
Description
(特許文献1)特開2006−66456号公報
図13に示すセンサ1300を作製した。シリコンを含むベース基板1302として、ベース基板1302の全体がシリコンであるp型Si基板を準備した。ベース基板1302の表面に、阻害体1304として、熱酸化法により酸化シリコン層を形成した。酸化シリコン層の厚さの平均値は、0.1μmであった。フォトリソグラフィ法により、阻害体1304の一部にベース基板1302を露出する複数の開口1306を形成した。開口1306の大きさは、20μm×20μmとした。
開口1306の大きさを30μm×30μmとした以外は、実施例1と同様にして、ベース基板1302であるp型Si基板上に、阻害体1304として酸化シリコン層を形成し、阻害体1304の一部にベース基板1302を露出する複数の開口1306を形成した。引き続き、実施例1と同様に、第1シード体1312としてGe結晶層を形成し、Ge結晶層をアニールした後に、第2シード体1314としてGaAs結晶層を形成した。
実施例1と同様にして、ベース基板1302であるp型Si基板上に、阻害体1304として酸化シリコン層を形成し、阻害体1304の一部にベース基板1302を露出する複数の開口1306を形成する。引き続き、実施例1と同様に、第1シード体1312としてGe結晶層を形成し、Ge結晶層をアニールし、この後第2シード体1314としてGaAs結晶層を形成する。
実施例1と同様にして、ベース基板1302であるp型Si基板上に、阻害体1304として酸化シリコン層を形成し、阻害体1304の一部にベース基板1302を露出する複数の開口1306を形成する。引き続き、実施例1と同様に、ベース基板1302を反応炉の内部に配置して、シード体としてGe結晶層を形成した。さらに反応炉の中でGe結晶層をアニール処理する。
図20は、センサ1400の断面の一例を概略的に示す。シリコンを含むベース基板1402として、ベース基板1402の全体が低抵抗シリコン結晶であるSi基板を準備する。実施例1と同様にして、Si基板の上に、阻害体1304として酸化シリコン層を形成し、阻害体1304の一部にベース基板1402を露出する複数の開口1306を形成する。引き続き、実施例1と同様に、第1シード体1312としてGe結晶層を形成し、Ge結晶層をアニールし、この後第2シード体1314としてGaAs結晶層を形成する。
実施例1と同様にして、ベース基板1302であるp型Si基板上に、阻害体1304として酸化シリコン層を形成し、阻害体1304の一部にベース基板1302を露出する複数の開口1306を形成する。引き続き、実施例1と同様に、第1シード体1312としてGe結晶層を形成し、Ge結晶層をアニールし、この後第2シード体1314としてGaAs結晶層を形成する。
図21から図24は、センサ1500の製造過程における断面例を示す。図25は、センサ1500の断面の一例を概略的に示す。図21に示すように、実施例1と同様にして、ベース基板1302であるp型Si基板上に、阻害体1304として酸化シリコン層を形成し、阻害体1304の一部にベース基板1302を露出する複数の開口1306を形成する。引き続き、実施例1と同様に、第1シード体1312としてGe結晶層を形成し、Ge結晶層をアニールし、この後第2シード体1314としてGaAs結晶層を形成する。
Claims (24)
- シリコンを含むベース基板と、
前記ベース基板の上方に形成され、前記ベース基板の少なくとも一部の領域を露出する開口を有し、結晶成長を阻害する阻害体と、
前記開口の内部の前記ベース基板の上方に設けられ、C x2 Si y2 Ge z2 Sn 1−x2−y2−z2 (0≦x2<1、0≦y2≦1、0≦z2≦1、かつ0<x2+y2+z2≦1)からなるシード体と、
前記シード体に格子整合または擬格子整合し、光または熱を吸収してキャリアを生成する3−5族化合物半導体からなる光熱吸収体と、
前記ベース基板と前記シード体との界面に接して、前記ベース基板内に、組成がC x2 Si y2´ Ge z2 Sn 1−x2−y2´−z2 (0<x2≦1、0<y2´≦1、0≦z2≦1、0<x2+y2´+z2≦1、かつy2<y2´<1)である界面領域と、
を備え、
前記光熱吸収体が、前記光熱吸収体に入射する入射光または前記光熱吸収体に加わる熱に応じて電気信号を出力するセンサ。 - 前記ベース基板は、前記シリコンのバルク領域が有する不純物と反対の伝導型の不純物を有する不純物領域を有し、
前記光熱吸収体は、前記シード体を介して前記不純物領域と電気的に結合されている請求項1に記載のセンサ。 - 前記阻害体が複数の前記開口を有し、前記複数の開口内に形成された複数の前記光熱吸収体を備える請求項1に記載のセンサ。
- 前記ベース基板は不純物を有する不純物領域を有し、
前記シード体は前記不純物領域に接して設けられ、
前記複数の光熱吸収体のうちの少なくとも2つの光熱吸収体が、前記シード体を介して前記不純物領域と電気的に結合されている請求項3に記載のセンサ。 - 前記複数の光熱吸収体のそれぞれに対応して前記ベース基板に形成された複数の増幅素子と、
前記複数の増幅素子および前記複数の光熱吸収体を接続し、前記阻害体上に形成されている配線と
をさらに備える請求項3または請求項4に記載のセンサ。 - 前記光熱吸収体が、Gax1In1−x1Ny1Pz1Asw1Sb1−y1−z1−w1(0≦x1≦1、0≦y1≦1、0≦z1≦1、0≦w1≦1、かつ0≦y1+z1+w1≦1)を有する請求項1から請求項5の何れか一項に記載のセンサ。
- 前記光熱吸収体が、Gax1In1−x1Ny1Pz1Asw1Sb1−y1−z1−w1(0≦x1≦1、0≦y1≦1、0≦z1≦1、0≦w1≦1、かつ0≦y1+z1+w1≦1)からなる第1層と、Gax4In1−x4Ny4Pz4Asw3Sb1−y4―z4−w3(0≦x4≦1、0≦y4≦1、0≦z4≦1、0≦w3≦1、かつ0≦y1+z1+w1≦1)からなり、禁制帯幅が前記第1層の禁制帯幅より大きな第2層とを積層した超格子構造体である請求項6に記載のセンサ。
- 前記光熱吸収体の側壁に接して形成され、前記光熱吸収体よりも禁制帯幅の大きな半導体または前記光熱吸収体よりも禁制帯幅の大きな誘電体を有し、前記側壁における前記キャリアの再結合を抑制する再結合抑制体をさらに備える請求項1から請求項7の何れか一項に記載のセンサ。
- 前記光熱吸収体は、前記ベース基板に平行な面の中心からの距離がより大きな位置において、より大きな禁制帯幅となる組成分布を有する請求項1から請求項8の何れか一項に記載のセンサ。
- 前記光熱吸収体は、x1≠1である場合に、前記中心からの距離がより大きな位置において、Inの割合がより小さくなる組成分布を有する請求項6から請求項9の何れか一項に記載のセンサ。
- 前記シード体が前記入射光に応じて電気信号を発生する請求項1から請求項10の何れか一項に記載のセンサ。
- シリコンを含むベース基板と、
前記ベース基板の上方に形成され、前記ベース基板の少なくとも一部の領域を露出する開口を有し、結晶成長を阻害する阻害体と、
前記開口の内部の前記ベース基板の上方に設けられ、C x2 Si y2 Ge z2 Sn 1−x2−y2−z2 (0≦x2<1、0≦y2≦1、0≦z2≦1、かつ0<x2+y2+z2≦1)からなるシード体と、
前記シード体に格子整合または擬格子整合し、光または熱を吸収してキャリアを生成する3−5族化合物半導体からなる光熱吸収体と、
前記ベース基板と前記シード体との界面に接して、前記ベース基板内に、組成がC x2 Si y2´ Ge z2 Sn 1−x2−y2´−z2 (0<x2≦1、0<y2´≦1、0≦z2≦1、0<x2+y2´+z2≦1、かつy2<y2´<1)である界面領域と、
を備えた半導体基板。 - 前記ベース基板は、前記シリコンのバルク領域が有する不純物と反対の伝導型の不純物を有する不純物領域を有し、
前記光熱吸収体は、前記シード体を介して前記不純物領域と電気的に結合されている請求項12に記載の半導体基板。 - 前記阻害体が複数の前記開口を有し、前記複数の開口内に形成された複数の前記光熱吸収体を備える請求項12に記載の半導体基板。
- 前記ベース基板は不純物を有する不純物領域を有し、
前記シード体は前記不純物領域に接して設けられ、
前記複数の光熱吸収体のうちの少なくとも2つの光熱吸収体が、前記シード体を介して前記不純物領域と電気的に結合されている請求項14に記載の半導体基板。 - 前記光熱吸収体が、Gax1In1−x1Ny1Pz1Asw1Sb1−y1−z1−w1(0≦x1≦1、0≦y1≦1、0≦z1≦1、0≦w1≦1、かつ0≦y1+z1+w1≦1)を有する請求項12から請求項15の何れか一項に記載の半導体基板。
- 前記光熱吸収体が、Gax1In1−x1Ny1Pz1Asw1Sb1−y1−z1−w1(0≦x1≦1、0≦y1≦1、0≦z1≦1、0≦w1≦1、かつ0≦y1+z1+w1≦1)からなる第1層と、Gax4In1−x4Ny4Pz4Asw3Sb1−y4―z4−w3(0≦x4≦1、0≦y4≦1、0≦z4≦1、0≦w3≦1、かつ0≦y1+z1+w1≦1)からなり、禁制帯幅が前記第1層の禁制帯幅より大きな第2層とを積層した超格子構造体である請求項16に記載の半導体基板。
- 前記光熱吸収体の側壁に接して形成され、前記光熱吸収体よりも禁制帯幅の大きな半導体または前記光熱吸収体よりも禁制帯幅の大きな誘電体を有し、前記側壁における前記キャリアの再結合を抑制する再結合抑制体をさらに備える請求項12から請求項17の何れか一項に記載の半導体基板。
- 前記光熱吸収体は、前記ベース基板に平行な面の中心からの距離がより大きな位置において、より大きな禁制帯幅となる組成分布を有する請求項12から請求項18の何れか一項に記載の半導体基板。
- 前記光熱吸収体は、x1≠1である場合に、前記中心からの距離がより大きな位置において、Inの割合がより小さくなる組成分布を有する請求項16から請求項19の何れか一項に記載の半導体基板。
- シリコンを含むベース基板の上方に阻害体を形成する段階と、
前記阻害体に、前記ベース基板の表面を露出する開口を形成する段階と、
前記開口の内部にシード体を形成する段階と、
前記シード体を加熱する段階と、
前記加熱された前記シード体の上方に、光または熱を吸収してキャリアを生成する3−5族化合物半導体からなる光熱吸収体を、前記シード体に格子整合または擬格子整合させてエピタキシャル成長させる段階と
を備え、
前記シード体を形成する段階においては、Cx2Siy2Gez2Sn1−x2−y2−z2(0≦x2<1、0≦y2≦1、0≦z2≦1、かつ0<x2+y2+z2≦1)からなる前記シード体を形成し、
前記シード体を加熱する段階においては、前記ベース基板と前記シード体との界面に接して、前記ベース基板内に、組成がC x2 Si y2´ Ge z2 Sn 1−x2−y2´−z2 (0<x2≦1、0<y2´≦1、0≦z2≦1、0<x2+y2´+z2≦1、かつy2<y2´<1)である界面領域を形成する
半導体基板の製造方法。 - 前記光熱吸収体を形成する段階においては、前記加熱された前記シード体の上方に前記光熱吸収体をエピタキシャル成長させる請求項21に記載の半導体基板の製造方法。
- 前記光熱吸収体を形成する段階においては、Gax1In1−x1Ny1Pz1Asw1Sb1−y1−z1−w1(0≦x1≦1、0≦y1≦1、0≦z1≦1、0≦w1≦1、かつ0≦y1+z1+w1≦1)からなる前記光熱吸収体をエピタキシャル成長させる請求項22に記載の半導体基板の製造方法。
- 前記シード体を加熱する段階においては、前記シード体の吸収係数が前記阻害体の吸収係数よりも大きい電磁波を照射する請求項23に記載の半導体基板の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010128368A JP5669254B2 (ja) | 2009-06-05 | 2010-06-04 | センサ、半導体基板、および半導体基板の製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009136666 | 2009-06-05 | ||
JP2009136666 | 2009-06-05 | ||
JP2010128368A JP5669254B2 (ja) | 2009-06-05 | 2010-06-04 | センサ、半導体基板、および半導体基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011014898A JP2011014898A (ja) | 2011-01-20 |
JP5669254B2 true JP5669254B2 (ja) | 2015-02-12 |
Family
ID=43297516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010128368A Expired - Fee Related JP5669254B2 (ja) | 2009-06-05 | 2010-06-04 | センサ、半導体基板、および半導体基板の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8835906B2 (ja) |
JP (1) | JP5669254B2 (ja) |
KR (1) | KR101671552B1 (ja) |
CN (1) | CN102449784B (ja) |
TW (1) | TWI523210B (ja) |
WO (1) | WO2010140373A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109727849A (zh) * | 2018-12-17 | 2019-05-07 | 浙江大学 | 一种无串扰瞬时提高基于缺陷态机制的载流子耗尽型硅光功率监测器响应度的方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5943645B2 (ja) | 2011-03-07 | 2016-07-05 | 住友化学株式会社 | 半導体基板、半導体装置および半導体基板の製造方法 |
KR102104062B1 (ko) * | 2013-10-31 | 2020-04-23 | 삼성전자 주식회사 | 기판 구조체, 이를 포함한 cmos 소자 및 cmos 소자 제조 방법 |
JP6903896B2 (ja) * | 2016-01-13 | 2021-07-14 | ソニーグループ株式会社 | 受光素子の製造方法 |
WO2017122537A1 (ja) * | 2016-01-13 | 2017-07-20 | ソニー株式会社 | 受光素子、受光素子の製造方法、撮像素子および電子機器 |
JP6720710B2 (ja) * | 2016-06-14 | 2020-07-08 | 住友電気工業株式会社 | 赤外線検知素子 |
JP2019009248A (ja) * | 2017-06-23 | 2019-01-17 | 日本電信電話株式会社 | 半導体積層構造 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60210831A (ja) | 1984-04-04 | 1985-10-23 | Agency Of Ind Science & Technol | 化合物半導体結晶基板の製造方法 |
JPH073814B2 (ja) | 1984-10-16 | 1995-01-18 | 松下電器産業株式会社 | 半導体基板の製造方法 |
US4614564A (en) | 1984-12-04 | 1986-09-30 | The United States Of America As Represented By The United States Department Of Energy | Process for selectively patterning epitaxial film growth on a semiconductor substrate |
JPS61188927A (ja) | 1985-02-15 | 1986-08-22 | Sharp Corp | 化合物半導体装置 |
JPS61294877A (ja) * | 1985-06-24 | 1986-12-25 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JPS62230066A (ja) * | 1986-03-31 | 1987-10-08 | Shimadzu Corp | 半導体受光素子 |
US4639756A (en) * | 1986-05-05 | 1987-01-27 | Santa Barbara Research Center | Graded gap inversion layer photodiode array |
JPS637672A (ja) * | 1986-06-27 | 1988-01-13 | Mitsubishi Electric Corp | 半導体装置 |
JPS6314418A (ja) * | 1986-07-04 | 1988-01-21 | Mitsubishi Electric Corp | 半導体基板 |
JPS63108709A (ja) * | 1986-10-25 | 1988-05-13 | Toyota Central Res & Dev Lab Inc | 半導体装置およびその製造方法 |
JPH01149444A (ja) * | 1987-12-06 | 1989-06-12 | Canon Inc | 多層構造体 |
JPH03210433A (ja) * | 1990-01-12 | 1991-09-13 | Nissan Motor Co Ltd | 前景輝度検出装置 |
JPH0529643A (ja) * | 1991-07-19 | 1993-02-05 | Fujitsu Ltd | 赤外線検知装置 |
JP3425185B2 (ja) * | 1993-03-26 | 2003-07-07 | 日本オプネクスト株式会社 | 半導体素子 |
JPH06326029A (ja) * | 1993-05-13 | 1994-11-25 | Nippon Sheet Glass Co Ltd | 多結晶半導体膜の製造方法 |
JPH07321357A (ja) * | 1994-05-27 | 1995-12-08 | Sanyo Electric Co Ltd | 光起電力装置 |
US5621227A (en) * | 1995-07-18 | 1997-04-15 | Discovery Semiconductors, Inc. | Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy |
JP3911647B2 (ja) * | 1997-02-13 | 2007-05-09 | 富士通株式会社 | 量子井戸型光検知器 |
JPH10290051A (ja) * | 1997-04-16 | 1998-10-27 | Furukawa Electric Co Ltd:The | 半導体装置とその製造方法 |
JP4054480B2 (ja) * | 1999-05-18 | 2008-02-27 | キヤノン株式会社 | Si基板上の光電融合デバイス構造、その製造方法、及び成膜方法 |
US7012314B2 (en) * | 2002-12-18 | 2006-03-14 | Agere Systems Inc. | Semiconductor devices with reduced active region defects and unique contacting schemes |
JP2006066456A (ja) | 2004-08-24 | 2006-03-09 | Fuji Photo Film Co Ltd | 固体撮像素子 |
JP2007081185A (ja) * | 2005-09-15 | 2007-03-29 | Fujifilm Corp | 光検出素子 |
JP2007281266A (ja) * | 2006-04-10 | 2007-10-25 | Sumitomo Electric Ind Ltd | 裏面入射型フォトダイオードアレイおよびセンサ |
WO2008036256A1 (en) | 2006-09-18 | 2008-03-27 | Amberwave Systems Corporation | Aspect ratio trapping for mixed signal applications |
JP2009177168A (ja) | 2007-12-28 | 2009-08-06 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法および電子デバイス |
KR20100092932A (ko) | 2007-12-28 | 2010-08-23 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판 및 반도체 기판의 제조 방법 |
US8809908B2 (en) | 2007-12-28 | 2014-08-19 | Sumitomo Chemical Company, Limited | Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device |
US20110012175A1 (en) | 2007-12-28 | 2011-01-20 | Sumitomo Chemical Company, Limited | Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device |
JP5543711B2 (ja) | 2007-12-28 | 2014-07-09 | 住友化学株式会社 | 半導体基板、半導体基板の製造方法および電子デバイス |
KR20100123680A (ko) | 2008-03-01 | 2010-11-24 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판, 반도체 기판의 제조방법 및 전자 디바이스 |
JP5669359B2 (ja) | 2008-03-01 | 2015-02-12 | 住友化学株式会社 | 半導体基板、半導体基板の製造方法および電子デバイス |
DE102008029306A1 (de) | 2008-06-20 | 2009-12-24 | Bayer Technology Services Gmbh | Schneckenelemente mit reduziertem Energieeintrag beim Druckaufbau |
TW201019376A (en) | 2008-10-02 | 2010-05-16 | Sumitomo Chemical Co | Semiconductor wafer, electronic device and manufacturing method of semiconductor wafer |
TWI471910B (zh) | 2008-10-02 | 2015-02-01 | Sumitomo Chemical Co | 半導體晶圓、電子裝置及半導體晶圓之製造方法 |
TW201019375A (en) | 2008-10-02 | 2010-05-16 | Sumitomo Chemical Co | Semiconductor wafer, electronic device, and method for making a semiconductor wafer |
-
2010
- 2010-06-03 CN CN201080022788.6A patent/CN102449784B/zh not_active Expired - Fee Related
- 2010-06-03 KR KR1020117026327A patent/KR101671552B1/ko active IP Right Grant
- 2010-06-03 WO PCT/JP2010/003723 patent/WO2010140373A1/ja active Application Filing
- 2010-06-04 TW TW099118120A patent/TWI523210B/zh not_active IP Right Cessation
- 2010-06-04 JP JP2010128368A patent/JP5669254B2/ja not_active Expired - Fee Related
-
2011
- 2011-12-02 US US13/310,522 patent/US8835906B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109727849A (zh) * | 2018-12-17 | 2019-05-07 | 浙江大学 | 一种无串扰瞬时提高基于缺陷态机制的载流子耗尽型硅光功率监测器响应度的方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201104855A (en) | 2011-02-01 |
KR20120036801A (ko) | 2012-04-18 |
TWI523210B (zh) | 2016-02-21 |
US8835906B2 (en) | 2014-09-16 |
KR101671552B1 (ko) | 2016-11-01 |
JP2011014898A (ja) | 2011-01-20 |
CN102449784B (zh) | 2015-06-03 |
US20120138898A1 (en) | 2012-06-07 |
CN102449784A (zh) | 2012-05-09 |
WO2010140373A1 (ja) | 2010-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101643021B1 (ko) | 반도체 기판, 광전 변환 디바이스, 반도체 기판의 제조 방법 및 광전 변환 디바이스의 제조 방법 | |
JP5669254B2 (ja) | センサ、半導体基板、および半導体基板の製造方法 | |
TWI463647B (zh) | 固態成像裝置及其製造方法,及成像設備 | |
US20190013430A1 (en) | Optoelectronic devices including dilute nitride | |
JP2010512664A (ja) | 酸化亜鉛多接合光電池及び光電子装置 | |
US11271122B2 (en) | Short wavelength infrared optoelectronic devices having a dilute nitride layer | |
US9324911B2 (en) | Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures | |
Zhang et al. | Thin-film antimonide-based photodetectors integrated on Si | |
US20130081670A1 (en) | Photocell | |
US8665363B2 (en) | Solid-state image device, method for producing the same, and image pickup apparatus | |
US20210249545A1 (en) | Optoelectronic devices having a dilute nitride layer | |
US20130008508A1 (en) | Light absorbing material and photoelectric conversion element | |
Ben Slimane et al. | 1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency | |
US20210210646A1 (en) | Broadband uv-to-swir photodetectors, sensors and systems | |
JP2014220351A (ja) | 多接合太陽電池 | |
JP6613923B2 (ja) | 半導体積層体、受光素子および半導体積層体の製造方法 | |
TWI416716B (zh) | 固態影像裝置,其製造方法,及攝像設備 | |
Aslam et al. | Development of ultra-high sensitivity wide-band gap UV-EUV detectors at NASA Goddard Space Flight Center |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130529 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140425 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140722 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140919 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141202 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141212 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5669254 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |