JP6720710B2 - 赤外線検知素子 - Google Patents
赤外線検知素子 Download PDFInfo
- Publication number
- JP6720710B2 JP6720710B2 JP2016118154A JP2016118154A JP6720710B2 JP 6720710 B2 JP6720710 B2 JP 6720710B2 JP 2016118154 A JP2016118154 A JP 2016118154A JP 2016118154 A JP2016118154 A JP 2016118154A JP 6720710 B2 JP6720710 B2 JP 6720710B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- mesa
- type
- superlattice
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 207
- 238000001514 detection method Methods 0.000 claims description 28
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 17
- 238000001312 dry etching Methods 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000969 carrier Substances 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
Description
支持体13:InP。
支持体13の表面の導電型:n型。
第1半導体層17:ZnドープInGaAs。
第1半導体層17のドーパント濃度:1×1018〜3×1018cm−3。
第1半導体層17の厚さ:300〜1000nm。
第2半導体層19:ZnドープInGaAs。
第2半導体層19のドーパント濃度:5×1015〜5×1016cm−3。
第2半導体層19の厚さ:10〜100nm。
第2メサ27は、InGaAs/GaAsSbのZnドープ超格子を含むことができる。
第3半導体層21:アンドープ(n型)InGaAs。
第3半導体層21のキャリア濃度:n型不純物濃度で1×1015cm−3以下。
第3半導体層21の厚さ(第2メサ上における層厚):200〜1000nm。
第3半導体層21の厚さ(第1メサ間における層厚):120〜1000nm。
超格子領域23(井戸層23a/障壁層23b):InGaAs/GaAsSb。
第1電極33:Ti,Pt,Au。
第2電極35:Ti,Pt,Au。
本実施例では、第2メサ27の最上層は、第3半導体層21と実質的に同じ組成を有することが好ましく、第2半導体層19及び第3半導体層21はホモpn接合を形成でき、また第1半導体層17及び第2半導体層19はホモpn接合を形成する。
Claims (6)
- 赤外線検知素子であって、
支持体と、
前記支持体上にアレイ状に設けられたフォトダイオードと、
を含み、
前記フォトダイオードの各々は、
第1導電型を有する第1半導体層を含む第1メサと、
前記第1導電型を有する第2半導体層と、
前記第1半導体層と前記第2半導体層との間において前記フォトダイオードのアレイに共通に設けられ、前記第1導電型と異なる第2導電型を有する第3半導体層と、
前記フォトダイオードのアレイに共通に基準面に沿って設けられ、構成元素としてアンチモンを含む半導体を含む超格子領域と、
を備え、
前記第1メサ及び第2半導体層は、前記基準面に交差する第1軸の方向に配列され、
前記第1メサの高さは、前記第1半導体層の厚さより大きく、
前記第2半導体層は、前記第3半導体層と前記超格子領域との間に設けられる、赤外線検知素子。 - 前記第1半導体層は、前記第1メサの側面に到達し、
前記第1メサの前記側面は、絶縁膜で覆われ、
前記第1メサは、前記第3半導体層内に底部を有する、請求項1に記載された赤外線検知素子。 - 前記フォトダイオードの各々は、前記第2半導体層を含む第2メサを更に備え、
前記第2メサは、前記第2半導体層の厚さ以上の高さを有し、
前記第3半導体層は、前記第2メサを埋め込む、請求項1又は請求項2に記載された赤外線検知素子。 - 前記第2半導体層は、p型導電性のInGaAsを含み、
前記InGaAsは、5×1015cm−3以上5×1016cm−3以下の範囲のp型ドーパント濃度を有する、請求項1〜請求項3のいずれか一項に記載された赤外線検知素子。 - 前記第2半導体層は、p型導電性のInGaAs/GaAsSb超格子を含み、
前記InGaAs/GaAsSb超格子は、5×1015cm−3以上5×1016cm−3以下の範囲のp型ドーパント濃度を有する、請求項1〜請求項3のいずれか一項に記載された赤外線検知素子。 - 前記第3半導体層は、n型InGaAsを含み、
前記第3半導体層は、前記第2半導体層及び前記超格子領域に接触を成す、請求項1〜請求項5のいずれか一項に記載された赤外線検知素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016118154A JP6720710B2 (ja) | 2016-06-14 | 2016-06-14 | 赤外線検知素子 |
US15/585,738 US9899549B2 (en) | 2016-06-14 | 2017-05-03 | Infrared-ray sensing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016118154A JP6720710B2 (ja) | 2016-06-14 | 2016-06-14 | 赤外線検知素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017224681A JP2017224681A (ja) | 2017-12-21 |
JP6720710B2 true JP6720710B2 (ja) | 2020-07-08 |
Family
ID=60573152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016118154A Active JP6720710B2 (ja) | 2016-06-14 | 2016-06-14 | 赤外線検知素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9899549B2 (ja) |
JP (1) | JP6720710B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7077889B2 (ja) * | 2018-09-14 | 2022-05-31 | 住友電気工業株式会社 | 半導体受光素子 |
JP7347005B2 (ja) * | 2019-08-28 | 2023-09-20 | 住友電気工業株式会社 | 受光素子 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296384A (en) * | 1992-07-21 | 1994-03-22 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector and method for fabricating same |
JP2601231B2 (ja) * | 1994-12-22 | 1997-04-16 | 日本電気株式会社 | 超格子アバランシェフォトダイオード |
JP2001144278A (ja) | 1999-11-12 | 2001-05-25 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
JP2002100796A (ja) | 2000-07-18 | 2002-04-05 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
US8120079B2 (en) * | 2002-09-19 | 2012-02-21 | Quantum Semiconductor Llc | Light-sensing device for multi-spectral imaging |
KR100892667B1 (ko) * | 2007-08-14 | 2009-04-15 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 및 그 제조 방법 |
US7755079B2 (en) * | 2007-08-17 | 2010-07-13 | Sandia Corporation | Strained-layer superlattice focal plane array having a planar structure |
JP2010067655A (ja) * | 2008-09-09 | 2010-03-25 | Sony Corp | 半導体光学素子、光ピックアップ及び光ディスク記録再生装置 |
US8178863B2 (en) * | 2009-06-01 | 2012-05-15 | Teledyne Scientific & Imaging, Llc | Lateral collection architecture for SLS detectors |
CN102449784B (zh) * | 2009-06-05 | 2015-06-03 | 独立行政法人产业技术综合研究所 | 传感器、半导体基板、和半导体基板的制造方法 |
JP2013175686A (ja) * | 2012-02-27 | 2013-09-05 | Sumitomo Electric Ind Ltd | 受光素子、その製造方法、および検出装置 |
JP6080092B2 (ja) * | 2012-05-30 | 2017-02-15 | 住友電気工業株式会社 | 受光素子、半導体エピタキシャルウエハ、検出装置および受光素子の製造方法 |
JP2014127499A (ja) * | 2012-12-25 | 2014-07-07 | Sumitomo Electric Ind Ltd | 受光デバイス、その製造法、およびセンシング装置 |
JP6138018B2 (ja) * | 2013-10-03 | 2017-05-31 | 三菱電機株式会社 | 赤外線固体撮像素子 |
JP6459460B2 (ja) * | 2014-12-10 | 2019-01-30 | 住友電気工業株式会社 | 半導体受光素子を作製する方法 |
JP2016111294A (ja) * | 2014-12-10 | 2016-06-20 | 住友電気工業株式会社 | 半導体受光素子を作製する方法 |
US9583654B2 (en) * | 2015-01-05 | 2017-02-28 | Sumitomo Electric Industries, Ltd. | Light receiving device and image sensor |
JP2017037871A (ja) * | 2015-08-06 | 2017-02-16 | 住友電気工業株式会社 | 受光装置、受光装置を作製する方法 |
-
2016
- 2016-06-14 JP JP2016118154A patent/JP6720710B2/ja active Active
-
2017
- 2017-05-03 US US15/585,738 patent/US9899549B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170358696A1 (en) | 2017-12-14 |
JP2017224681A (ja) | 2017-12-21 |
US9899549B2 (en) | 2018-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9698297B2 (en) | Light-receiving device and method for producing the same | |
TWI552371B (zh) | A group III-V compound semiconductor light-receiving element, a method for fabricating a III-V compound semiconductor light-receiving element, a light-receiving element, and an epitaxial wafer | |
US20070158664A1 (en) | Mesa structure photon detection circuit | |
JP6593140B2 (ja) | フォトダイオード | |
US11189741B2 (en) | Photodiode device, photodiode detector and methods of fabricating the same | |
JP2014127499A (ja) | 受光デバイス、その製造法、およびセンシング装置 | |
JP4009106B2 (ja) | 半導体受光素子、及びその製造方法 | |
US10790401B2 (en) | Semiconductor stacked body and light-receiving device | |
JP2016092037A (ja) | 半導体積層体、受光素子およびセンサ | |
JP6720710B2 (ja) | 赤外線検知素子 | |
JP2012216727A (ja) | 受光素子、その製造方法および検出装置 | |
US10326034B2 (en) | Semiconductor laminate and light-receiving element | |
JP4702474B2 (ja) | Iii−v族化合物半導体受光素子、及びiii−v族化合物半導体受光素子を作製する方法 | |
JP6613923B2 (ja) | 半導体積層体、受光素子および半導体積層体の製造方法 | |
JP6488855B2 (ja) | 半導体積層体、受光素子および半導体積層体の製造方法 | |
US20180286996A1 (en) | Reduced junction area barrier-based photodetector | |
US20170294547A1 (en) | Semiconductor layered structure, photodiode and sensor | |
JP6969199B2 (ja) | 受光素子 | |
JP5983716B2 (ja) | Iii−v族化合物半導体受光素子 | |
JP5659864B2 (ja) | Iii−v族化合物半導体受光素子 | |
JP2018182261A (ja) | 半導体受光デバイス | |
JP7147570B2 (ja) | 半導体積層体および受光素子 | |
JP7077889B2 (ja) | 半導体受光素子 | |
JP7078049B2 (ja) | 半導体積層体、受光素子および半導体積層体の製造方法 | |
US20180254300A1 (en) | Photodiode matrix with isolated cathodes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190521 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200417 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200519 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200601 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6720710 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |