JP7078049B2 - 半導体積層体、受光素子および半導体積層体の製造方法 - Google Patents
半導体積層体、受光素子および半導体積層体の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 119
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 63
- 150000001875 compounds Chemical class 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 27
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 15
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 229910005542 GaSb Inorganic materials 0.000 claims description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 7
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910017115 AlSb Inorganic materials 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000002161 passivation Methods 0.000 description 14
- 238000001947 vapour-phase growth Methods 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000523 sample Substances 0.000 description 7
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 6
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 101100208382 Danio rerio tmsb gene Proteins 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- -1 (silane) Chemical class 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OHMRXXUZFIRWLL-UHFFFAOYSA-N [N].[As].[In] Chemical compound [N].[As].[In] OHMRXXUZFIRWLL-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- BMZAJIYVAAFBTR-UHFFFAOYSA-N butylarsenic Chemical compound CCCC[As] BMZAJIYVAAFBTR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
受光素子においては、感度の上昇が求められている。受光素子では、量子井戸構造のキャリア濃度を低減することにより、感度を上昇させることができる。
本開示の半導体積層体は、III-V族化合物半導体からなる基板と、基板上に配置される量子井戸構造と、を備える。量子井戸構造は、III-V族化合物半導体からなり、Sbを含有する第2要素層と、第2要素層上に接触して配置され、III-V族化合物半導体からなる第1要素層と、を含む。第1要素層の基板から離れる向きにおいて、Sbの含有量が第2要素層におけるSbの含有量の最大値の80%から最大値の6%にまで減少するまでの厚みが0.5nm以上3.0nm以下である。
(実施の形態1)
次に、実施の形態1を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない場合がある。
そして、量子井戸構造40は、第1要素層41と第2要素層42とからなる単位構造が、たとえば250組積層されたものとすることができる。すなわち、量子井戸構造40の厚みは、たとえば2.5μmとすることができる。量子井戸構造40は、このような構造を有するタイプII量子井戸構造とすることができる。
すなわち、第1要素層41の厚みに対するSb急峻度の割合は10%以上60%以下である。そのため、本実施の形態の半導体積層体10は、量子井戸構造40のキャリア濃度を低減することにより感度を上昇させることが可能な半導体積層体となっている。第1要素層41の厚みに対するSb急峻度の割合は、20%以上とすることが好ましく、30%以上とすることがより好ましい。また、第1要素層41の厚みに対するSb急峻度の割合は、56%以下とすることが好ましい。
これにより、高品質な結晶からなる半導体積層体10を得ることが容易となる。
GaAs1-ySby(yは0.36以上1以下)からなる第2要素層42の形成では、Gaの原料としてたとえばTEGa、TMGaなどを用いることができ、Asの原料としてたとえばTBAs(ターシャリーブチルアルシン)、TMAs(トリメチル砒素)などを用いることができ、Sbの原料としてたとえばTMSb、TESb、TIPSb、TDMASb、TTBSbなどを用いることができる。第1要素層41および第2要素層42は、たとえばそれぞれ厚みを5nmとし、第1要素層41と第2要素層42とからなる単位構造が、たとえば250組積層するように形成することができる。これにより、タイプII量子井戸である量子井戸構造40を形成することができる。第1要素層41におけるSb急峻度は、適切な値、すなわち0.5nm以上3.0nm以下となるように調整される。
次に、実施の形態2における受光素子について説明する。図9および図2を参照して、実施の形態2の赤外線受光素子1は、図2に示す構造を単位構造とし、当該単位構造が、基板20の一方の主面20Aが延在する方向に複数繰り返される構造を有している。そして、赤外線受光素子1は、画素に対応する複数のp側電極92を有する。一方、n側電極91は1つだけ配置される。
10 半導体積層体
20 基板
20A 主面
30 バッファ層
30A 主面
40 量子井戸構造
40A 主面
41 第1要素層
42 第2要素層
50 ブロック層
50A 主面
60 コンタクト層
60A 主面
70 読み出し回路
71 本体
72,73 バンプ
75 配線
80 パッシベーション膜
81 開口部
82 開口部
91 n側電極
92 p側電極
99 トレンチ
99A 側壁
99B 底壁
100 赤外線センサ
Claims (11)
- III-V族化合物半導体からなる基板と、
前記基板上に配置される量子井戸構造と、を備え、
前記量子井戸構造は、
III-V族化合物半導体からなり、Sbを含有する第2要素層と、
前記第2要素層上に接触して配置され、III-V族化合物半導体からなる第1要素層と、を含み、
前記第1要素層の前記基板から離れる向きにおいて、Sbの含有量が前記第2要素層におけるSbの含有量の最大値の80%から前記最大値の6%にまで減少するまでの厚みが0.5nm以上3.0nm以下であり、
前記第1要素層はInGaAsからなり、前記第2要素層はGaAsSbからなる、半導体積層体。 - 前記量子井戸構造は、タイプII量子井戸構造である、請求項1に記載の半導体積層体。
- 前記第1要素層の前記基板から離れる向きにおいて、Sbの含有量が前記第2要素層におけるSbの含有量の最大値の80%から前記最大値の6%にまで減少するまでの厚みが1.0nm以上3.0nm以下である、請求項1または請求項2に記載の半導体積層体。
- III-V族化合物半導体からなる基板と、
前記基板上に配置される量子井戸構造と、を備え、
前記量子井戸構造は、
III-V族化合物半導体からなり、Sbを含有する第2要素層と、
前記第2要素層上に接触して配置され、III-V族化合物半導体からなる第1要素層と、を含み、
前記第1要素層の前記基板から離れる向きにおいて、Sbの含有量が前記第2要素層におけるSbの含有量の最大値の80%から前記最大値の6%にまで減少するまでの厚みが1.0nm以上3.0nm以下であり、
前記量子井戸構造は、タイプII量子井戸構造であり、
前記第1要素層はInGaAsからなり、前記第2要素層はGaAsSbからなる、半導体積層体。 - 前記基板は、GaAs、GaP、GaSb、InP、InAs、InSb、AlSb、またはAlAsからなる、請求項1から請求項4のいずれか1項に記載の半導体積層体。
- 請求項1から請求項5のいずれか1項に記載の半導体積層体と、
前記半導体積層体上に形成された電極と、を備える、受光素子。 - III-V族化合物半導体からなる基板を準備する工程と、
前記基板上に、III-V族化合物半導体からなるエピ層を形成する工程と、を備え、 前記エピ層を形成する工程は、量子井戸構造を形成する工程を含み、
前記量子井戸構造を形成する工程では、III-V族化合物半導体からなり、Sbを含有する第2要素層と、前記第2要素層上に接触して配置され、III-V族化合物半導体からなる第1要素層とが、形成され、
さらに前記量子井戸構造を形成する工程では、前記第1要素層の前記基板から離れる向きにおいて、Sbの含有量が前記第2要素層におけるSbの含有量の最大値の80%から前記最大値の6%にまで減少するまでの厚みが0.5nm以上3.0nm以下であるように形成され、
前記第1要素層はInGaAsからなり、前記第2要素層はGaAsSbからなる、半導体積層体の製造方法。 - 前記量子井戸構造を形成する工程では、前記第1要素層の前記基板から離れる向きにおいて、Sbの含有量が前記第2要素層におけるSbの含有量の最大値の80%から前記最大値の6%にまで減少するまでの厚みが1.0nm以上3.0nm以下であるように形成される、請求項7に記載の半導体積層体の製造方法。
- 前記量子井戸構造を形成する工程では、前記第1要素層と前記第2要素層とが510℃以上570℃以下の温度域で形成される、請求項8に記載の半導体積層体の製造方法。
- 前記量子井戸構造を形成する工程では、III族元素の原料の供給量に対するV族元素の原料の供給量の比が3以下となる条件下にて前記第1要素層と前記第2要素層とが形成される、請求項7から請求項9のいずれか1項に記載の半導体積層体の製造方法。
- 前記量子井戸構造を形成する工程では、前記第1要素層と前記第2要素層とが0.1μm/h以下の成長速度で形成される、請求項7から請求項10のいずれか1項に記載の半導体積層体の製造方法。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206499A (ja) | 2008-02-01 | 2009-09-10 | Sumitomo Electric Ind Ltd | 受光素子、受光素子アレイおよびそれらの製造方法 |
JP2010258097A (ja) | 2009-04-22 | 2010-11-11 | Panasonic Electric Works Co Ltd | 窒化物半導体層の製造方法、窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
WO2012114849A1 (ja) | 2011-02-23 | 2012-08-30 | 住友電気工業株式会社 | 受光素子およびその製造方法 |
JP2013187309A (ja) | 2012-03-07 | 2013-09-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2014216624A (ja) | 2013-04-30 | 2014-11-17 | 住友電気工業株式会社 | エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置 |
US20140374701A1 (en) | 2013-06-25 | 2014-12-25 | L-3 Communications Cincinnati Electronics Corporation | Superlattice Structures and Infrared Detector Devices Incorporating the Same |
WO2015059988A1 (ja) | 2013-10-22 | 2015-04-30 | 住友電気工業株式会社 | エピタキシャルウエハおよびその製造方法 |
JP2017135228A (ja) | 2016-01-27 | 2017-08-03 | 住友電気工業株式会社 | 半導体積層体および受光素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291688A (ja) * | 1992-04-15 | 1993-11-05 | Rohm Co Ltd | 半導体レーザ |
US5471494A (en) | 1992-04-08 | 1995-11-28 | Rohm Co., Ltd. | Method for selecting a self pulsating semiconductor laser |
JP2003017812A (ja) * | 2001-04-25 | 2003-01-17 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
EP2477234B1 (en) * | 2009-09-07 | 2021-06-23 | Sumitomo Electric Industries, Ltd. | Group iii-v compound semiconductor light receiving element, method for manufacturing group iii-v compound semiconductor light receiving element, light receiving element, and epitaxial wafer |
JP5531744B2 (ja) * | 2010-04-13 | 2014-06-25 | 住友電気工業株式会社 | 半導体ウエハ、受光素子、受光素子アレイ、ハイブリッド型検出装置、光学センサ装置、および半導体ウエハの製造方法 |
DE102015108402B4 (de) * | 2015-05-28 | 2021-03-18 | Infineon Technologies Ag | Halbleiterbauelemente, ein Fluidsensor und ein Verfahren zum Bilden eines Halbleiterbauelements |
-
2018
- 2018-08-24 WO PCT/JP2018/031313 patent/WO2019044686A1/ja active Application Filing
- 2018-08-24 JP JP2019539445A patent/JP7078049B2/ja active Active
- 2018-08-24 US US16/635,482 patent/US11081605B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206499A (ja) | 2008-02-01 | 2009-09-10 | Sumitomo Electric Ind Ltd | 受光素子、受光素子アレイおよびそれらの製造方法 |
JP2010258097A (ja) | 2009-04-22 | 2010-11-11 | Panasonic Electric Works Co Ltd | 窒化物半導体層の製造方法、窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
WO2012114849A1 (ja) | 2011-02-23 | 2012-08-30 | 住友電気工業株式会社 | 受光素子およびその製造方法 |
JP2013187309A (ja) | 2012-03-07 | 2013-09-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2014216624A (ja) | 2013-04-30 | 2014-11-17 | 住友電気工業株式会社 | エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置 |
US20140374701A1 (en) | 2013-06-25 | 2014-12-25 | L-3 Communications Cincinnati Electronics Corporation | Superlattice Structures and Infrared Detector Devices Incorporating the Same |
WO2015059988A1 (ja) | 2013-10-22 | 2015-04-30 | 住友電気工業株式会社 | エピタキシャルウエハおよびその製造方法 |
JP2017135228A (ja) | 2016-01-27 | 2017-08-03 | 住友電気工業株式会社 | 半導体積層体および受光素子 |
Non-Patent Citations (4)
Title |
---|
LI, Xiaochao et al.,Atomic intermixing and segregation at the interface of InAs/GaSb type II superlattices,Superlattices and Microstructures,2017年02月28日,104 (2017),pp.390-396,http://dx.doi.org/10.1016/j.spmi.2017.02.052 |
LU, Jing et al.,Evaluation of antimony segregation in InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy,J. Appl. Phys.,2016年03月01日,119, 095702 (2016),pp.095702-1 - 095702-7,https://doi.org/10.1063/1.4942844 |
PETER, M. et al.,Light-emitting diodes and laser diodes based on a Ga1-xInxAs/GaAs1-ySby type II superlattice on InP substrate,Appl. Phys. Lett.,1999年04月01日,Vol.74, No.14,pp.1951-1953,https://doi.org/10.1063/1.123738 |
WOOD, M.R. et al.,Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM,Journal of Crystal Growth,2015年02月23日,425(2015),pp.110-114,http://dx.doi.org/10.1016/j.jcrysgro.2015.02.063 |
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