JP5663904B2 - 電気光学装置及びその製造方法、並びに電子機器 - Google Patents

電気光学装置及びその製造方法、並びに電子機器 Download PDF

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Publication number
JP5663904B2
JP5663904B2 JP2010050233A JP2010050233A JP5663904B2 JP 5663904 B2 JP5663904 B2 JP 5663904B2 JP 2010050233 A JP2010050233 A JP 2010050233A JP 2010050233 A JP2010050233 A JP 2010050233A JP 5663904 B2 JP5663904 B2 JP 5663904B2
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Japan
Prior art keywords
light
shielding film
insulating film
region
contact hole
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JP2010050233A
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English (en)
Japanese (ja)
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JP2011186108A (ja
JP2011186108A5 (https=
Inventor
孝史 江上
孝史 江上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2010050233A priority Critical patent/JP5663904B2/ja
Priority to US13/040,389 priority patent/US8130333B2/en
Publication of JP2011186108A publication Critical patent/JP2011186108A/ja
Publication of JP2011186108A5 publication Critical patent/JP2011186108A5/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2010050233A 2010-03-08 2010-03-08 電気光学装置及びその製造方法、並びに電子機器 Active JP5663904B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010050233A JP5663904B2 (ja) 2010-03-08 2010-03-08 電気光学装置及びその製造方法、並びに電子機器
US13/040,389 US8130333B2 (en) 2010-03-08 2011-03-04 Electric optical device and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010050233A JP5663904B2 (ja) 2010-03-08 2010-03-08 電気光学装置及びその製造方法、並びに電子機器

Publications (3)

Publication Number Publication Date
JP2011186108A JP2011186108A (ja) 2011-09-22
JP2011186108A5 JP2011186108A5 (https=) 2013-04-11
JP5663904B2 true JP5663904B2 (ja) 2015-02-04

Family

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Family Applications (1)

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JP2010050233A Active JP5663904B2 (ja) 2010-03-08 2010-03-08 電気光学装置及びその製造方法、並びに電子機器

Country Status (2)

Country Link
US (1) US8130333B2 (https=)
JP (1) JP5663904B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447983B (zh) * 2011-05-24 2014-08-01 Au Optronics Corp 半導體結構以及有機電致發光元件
JP2013080040A (ja) 2011-10-03 2013-05-02 Seiko Epson Corp 電気光学装置、電気光学装置の製造方法、及び電子機器
KR102067669B1 (ko) 2012-11-06 2020-01-20 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR102050460B1 (ko) * 2012-11-30 2019-11-29 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그를 이용한 디스플레이 장치
JP6044358B2 (ja) 2013-01-18 2016-12-14 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置、および電子機器
JP2016134388A (ja) 2015-01-15 2016-07-25 株式会社ジャパンディスプレイ 表示装置
TWI578509B (zh) * 2015-07-23 2017-04-11 友達光電股份有限公司 畫素結構
CN108292606B (zh) * 2015-11-18 2021-08-10 索尼公司 半导体装置和投影型显示装置
CN107154346B (zh) * 2017-05-19 2021-03-16 京东方科技集团股份有限公司 一种膜层的掺杂方法、薄膜晶体管及其制作方法
CN108459445B (zh) * 2018-03-30 2021-05-18 上海天马微电子有限公司 一种液晶显示面板、显示装置及液晶显示面板的制备方法
KR102621005B1 (ko) * 2018-12-26 2024-01-05 삼성디스플레이 주식회사 유기 발광 표시 장치
JP7491144B2 (ja) * 2020-08-27 2024-05-28 セイコーエプソン株式会社 電気光学装置、および電子機器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3307181B2 (ja) * 1995-07-31 2002-07-24 ソニー株式会社 透過型表示装置
JP3356429B2 (ja) * 2000-04-11 2002-12-16 日本電気株式会社 液晶表示装置および液晶プロジェクタ装置
JP4233307B2 (ja) * 2002-11-05 2009-03-04 シャープ株式会社 アクティブマトリクス基板および表示装置
JP4100351B2 (ja) * 2004-02-09 2008-06-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP4876548B2 (ja) * 2005-11-22 2012-02-15 セイコーエプソン株式会社 電気光学装置の製造方法
JP4241777B2 (ja) * 2006-07-25 2009-03-18 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4349406B2 (ja) * 2006-08-24 2009-10-21 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器
JP5104140B2 (ja) * 2007-09-10 2012-12-19 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2009139417A (ja) * 2007-12-03 2009-06-25 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器

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Publication number Publication date
JP2011186108A (ja) 2011-09-22
US8130333B2 (en) 2012-03-06
US20110215337A1 (en) 2011-09-08

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