JP4876548B2 - 電気光学装置の製造方法 - Google Patents
電気光学装置の製造方法 Download PDFInfo
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- JP4876548B2 JP4876548B2 JP2005337003A JP2005337003A JP4876548B2 JP 4876548 B2 JP4876548 B2 JP 4876548B2 JP 2005337003 A JP2005337003 A JP 2005337003A JP 2005337003 A JP2005337003 A JP 2005337003A JP 4876548 B2 JP4876548 B2 JP 4876548B2
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- H01L29/772—Field effect transistors
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- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
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Description
先ず、図1乃至図12を参照しながら、本発明の第1の発明に係る電気光学装置及び本発明の第2の発明に係る電気光学装置の製造方法の各実施形態を説明する。
図1及び図2を参照しながら、本実施形態の電気光学装置を説明する。図1は、TFTアレイ基板をその上に形成された各構成要素と共に対向基板の側から見た電気光学装置の平面図であり、図2は、図1のH−H'断面図である。本実施形態では、電気光学装置の一例として、駆動回路内蔵型のTFTアクティブマトリクス駆動方式の液晶装置を例に挙げる。
からなり、製造プロセスにおいてTFTアレイ基板10上に塗布された後、紫外線照射、加熱等により硬化させられたものである。シール材52中には、TFTアレイ基板10と対向基板20との間隔(基板間ギャップ)を所定値とするためのグラスファイバ或いはガラスビーズ等のギャップ材が散布されている。即ち、本実施形態の電気光学装置は、プロジェクタのライトバルブ用として小型で拡大表示を行うのに適している。
次に、図3乃至図5を参照しながら、液晶装置1の画素部の構成を詳細に説明する。図3は、液晶装置1の画像表示領域を構成するマトリクス状に形成された複数の画素における各種素子、配線等の等価回路であり、図4は、データ線、走査線、画素電極等が形成されたTFTアレイ基板の相隣接する複数の画素群の平面図である。図5は、図4のA−A´断面図である。尚、図5においては、各層・各部材を図面上で認識可能な程度の大きさとするため、該各層・各部材ごとに縮尺を異ならしめてある。
次に、図6及び図7を参照しながら、本実施形態の電気光学装置の変形例を説明する。本例の電気光学装置は、TFT30の構造が上述の電気光学装置と異なるため、TFT30eの構造を中心に説明する。図6は、本例の電気光学装置が備えるTFT30eの構造を示す断面図であり、図12は、本例の電気光学装置における図4に対応する平面図である。
次に、図8乃至図12を参照しながら、本発明の第2の発明に係る電気光学装置の製造方法の実施形態を説明する。図8乃至図11は、本実施形態の電気光学装置の製造プロセスの各工程を順を追って示す工程断面図である。図12は、TFT30を形成する製造プロセスを詳細に示した工程断面図である。本実施形態の電気光学装置の製造方法によれば、上述の液晶装置1を製造できる。尚、以下では、対向基板20上に形成される配向膜22や対向電極21等の製造工程に関しては省略する。
次に、図12を参照しながら、TFT30の製造プロセスを詳細に説明する。
次に、図13を参照しながら、本発明の第3の発明に係る電気光学装置の製造方法の実施形態を説明する。尚、以下では、TFT30の製造プロセスを中心に説明する。加えて、以下では、第1実施形態で説明した電気光学装置及びその製造方法と共通する部分に共通の参照符号を付し、詳細な説明を省略する。
次に、図14乃至図16を参照しながら、本発明の第4の発明に係る電気光学装置の製造方法の実施形態を説明する。
次に、図15を参照しながら、本実施形態に係る電気光学装置の製造方法の変形例の一例を説明する。
次に、図16を参照しながら、本実施形態に係る電気光学装置の製造方法の変形例の他の例を説明する。本例の電気光学装置の製造方法は、開口部92の縁を部分的に除去する点において本実施形態の変形例1と異なる。
次に、上述した液晶装置を各種の電子機器に適用される場合について説明する。
Claims (4)
- 基板上で互いに交差する複数のデータ線及び複数の走査線を形成する配線形成工程と、
前記基板上に形成された半導体層の所定の領域にレジスト膜を形成するレジスト膜形成工程と、
前記レジスト膜をマスクとして前記半導体層に不純物をドープすることによって、前記所定の領域の周囲に不純物領域を形成する第1ドープ工程と、
前記レジスト膜を除去した後、前記所定の領域、及び前記不純物領域のうち前記トランジスタのチャネル長の方向における前記所定の領域に隣接する領域を覆うように、第1ゲート電極となるべき導電膜及び第2ゲート電極を形成する導電膜形成工程と、
前記不純物領域のうち前記隣接する領域の外側の領域に前記第2ゲート電極をマスクとして前記不純物をドープすることによって、前記不純物の濃度が互いに異なる高濃度領域及び低濃度領域を前記半導体層に形成する第2ドープ工程と、
前記導電膜の脇から前記導電膜を選択的に除去することによって、前記低濃度領域に重ならない第1ゲート電極を形成する電極形成工程と、
前記複数のデータ線及び前記複数の走査線の交差に対応して設けられた画素電極を形成する画素電極形成工程とを備えたこと
を特徴とする電気光学装置の製造方法。 - 基板上で互いに交差する複数のデータ線及び複数の走査線を形成する配線形成工程と、
前記基板上に形成された半導体層の所定の領域に第1ゲート電極となるべき導電膜及び前記導電膜上に第2ゲート電極を形成する導電膜形成工程と、
前記第2ゲート電極をマスクとして前記半導体層に不純物をドープすることによって、前記所定の領域の周囲に不純物領域を形成する第1ドープ工程と、
前記導電膜の脇から前記導電膜を選択的に除去することによって、第1ゲート電極を形成する電極形成工程と、
前記トランジスタのチャネル長の方向において、前記不純物領域のうち前記所定の領域に隣接する領域の少なくとも一部を覆うように、サイドウォールを形成するサイドウォール形成工程と、
前記不純物領域のうち前記少なくとも一部の外側の領域に前記第2ゲート電極及び前記サイドウォールをマスクとして前記不純物をドープすることによって、前記不純物の濃度が互いに異なる高濃度領域及び低濃度領域を前記半導体層に形成する第2ドープ工程と、
前記半導体層を熱処理することによって、前記高濃度領域及び前記低濃度領域を広げる拡散工程と、
前記複数のデータ線及び前記複数の走査線の交差に対応して設けられた複数の画素電極を形成する画素電極形成工程とを備えたこと
を特徴とする電気光学装置の製造方法。 - 基板上で互いに交差する複数のデータ線及び複数の走査線を形成する配線形成工程と、
前記基板上に形成された半導体層の所定の領域を覆うように第1ゲート電極を形成する第1電極形成工程と、
前記第1ゲート電極をマスクとして前記半導体層に不純物をドープすることによって、前記所定の領域の周囲に不純物領域を形成する第1ドープ工程と、
前記不純物領域のうち前記トランジスタのチャネル長の方向における前記所定の領域に隣接する領域の少なくとも一部、及び前記所定の領域を覆うように、第1ゲート電極上に第2ゲート電極を形成する第2電極形成工程と、
前記不純物領域のうち前記トランジスタのチャネル長の方向における前記少なくとも一部の外側の領域に、前記第2ゲート電極をマスクとして前記不純物をドープすることによって、前記半導体層に前記不純物の濃度が互いに異なる高濃度領域及び低濃度領域を形成する第2ドープ工程と、
前記複数のデータ線及び前記複数の走査線の交差に対応して設けられた複数の画素電極を形成する画素電極形成工程と、
前記第2電極形成工程に先んじて、前記不純物領域及び前記第1ゲート電極を覆うように絶縁膜を形成した後、前記第1ゲート電極が露出するまで前記絶縁膜を研磨することによって、前記研磨された絶縁膜の研磨面及び前記研磨面から露出する前記第1ゲート電極の露出面を面一にする研磨工程とを備えたこと
を特徴とする電気光学装置の製造方法。 - 基板上で互いに交差する複数のデータ線及び複数の走査線を形成する配線形成工程と、
前記基板上に形成された半導体層の所定の領域を覆うように第1ゲート電極を形成する第1電極形成工程と、
前記第1ゲート電極をマスクとして前記半導体層に不純物をドープすることによって、前記所定の領域の周囲に不純物領域を形成する第1ドープ工程と、
前記不純物領域のうち前記トランジスタのチャネル長の方向における前記所定の領域に隣接する領域の少なくとも一部、及び前記所定の領域を覆うように、第1ゲート電極上に第2ゲート電極を形成する第2電極形成工程と、
前記不純物領域のうち前記トランジスタのチャネル長の方向における前記少なくとも一部の外側の領域に、前記第2ゲート電極をマスクとして前記不純物をドープすることによって、前記半導体層に前記不純物の濃度が互いに異なる高濃度領域及び低濃度領域を形成する第2ドープ工程と、
前記複数のデータ線及び前記複数の走査線の交差に対応して設けられた複数の画素電極を形成する画素電極形成工程と、
前記第2電極形成工程に先んじて、前記不純物領域及び前記第1ゲート電極を覆うように絶縁膜を形成した後、前記絶縁膜の一部を除去することによって前記第1ゲート電極の表面の少なくとも一部が露出する開口部を形成する開口部形成工程を備え、
前記第2電極形成工程において、前記表面の少なくとも一部で前記第1ゲート電極に電気的に接続されるように前記第2ゲート電極を形成し、
前記開口部形成工程において、該開口部を形成した後、前記絶縁膜のうち、該開口部の縁における前記第1ゲート電極上に突出した突部を部分的に除去すること
を特徴とする電気光学装置の製造方法。
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