JP5654206B2 - Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置 - Google Patents

Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置 Download PDF

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Publication number
JP5654206B2
JP5654206B2 JP2009069537A JP2009069537A JP5654206B2 JP 5654206 B2 JP5654206 B2 JP 5654206B2 JP 2009069537 A JP2009069537 A JP 2009069537A JP 2009069537 A JP2009069537 A JP 2009069537A JP 5654206 B2 JP5654206 B2 JP 5654206B2
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single crystal
crystal semiconductor
semiconductor layer
substrate
layer
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JP2009260314A (ja
JP2009260314A5 (https=
Inventor
山崎　舜平
舜平 山崎
恵里子 西田
恵里子 西田
貴志 島津
貴志 島津
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2009069537A 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置 Expired - Fee Related JP5654206B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009069537A JP5654206B2 (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008079592 2008-03-26
JP2008079592 2008-03-26
JP2009069537A JP5654206B2 (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置

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JP2009260314A JP2009260314A (ja) 2009-11-05
JP2009260314A5 JP2009260314A5 (https=) 2012-04-19
JP5654206B2 true JP5654206B2 (ja) 2015-01-14

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JP5565128B2 (ja) * 2010-06-17 2014-08-06 信越半導体株式会社 貼り合わせウエーハの製造方法
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JP6056516B2 (ja) * 2013-02-01 2017-01-11 信越半導体株式会社 Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ
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KR102944322B1 (ko) * 2018-07-19 2026-03-27 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
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CN114005753B (zh) * 2021-10-29 2023-07-11 西安微电子技术研究所 一种igbt产品的氧化工艺方法及氧化后igbt产品

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US20090261449A1 (en) 2009-10-22
US8530332B2 (en) 2013-09-10

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