JP5638645B2 - 高電圧垂直トランジスタで集積された検知トランジスタ - Google Patents
高電圧垂直トランジスタで集積された検知トランジスタ Download PDFInfo
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- JP5638645B2 JP5638645B2 JP2013036854A JP2013036854A JP5638645B2 JP 5638645 B2 JP5638645 B2 JP 5638645B2 JP 2013036854 A JP2013036854 A JP 2013036854A JP 2013036854 A JP2013036854 A JP 2013036854A JP 5638645 B2 JP5638645 B2 JP 5638645B2
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- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 19
- 210000000746 body region Anatomy 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7815—Vertical DMOS transistors, i.e. VDMOS transistors with voltage or current sensing structure, e.g. emulator section, overcurrent sensing cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
14a、14b N+ソース領域
15a、15b 誘電(酸化物)領域
16a、16b P+領域
17 シリコンピラー
18a、18b ゲート部材
19a、19b フィールドプレート
20a、20b ゲート酸化物層
24 N+領域
Claims (8)
- 並列関係で配列された複数のトランジスタセグメントを備える半導体デバイスであって、
前記各トランジスタセグメントが、
第1の導電型の基板上にレーストラック形レイアウトで形成され、幅及び第1の横方向に延びる長さを有し、且つ上面又はその近傍に配置されたソース領域と、拡張ドレイン領域と、前記ソース領域及び前記拡張ドレイン領域を垂直方向に分離する第2の導電型のボディ領域とを有する半導体材料のピラーであって、前記ソース領域が、前記第1の導電型の複数の第1の領域と、前記第2の導電型の複数の第2の領域と、から成り、前記第1の領域と前記第2の領域とが、前記第1の領域の各々が前記第2の領域に隣接するようにして、前記第1の横方向で交互に設置されている、前記ピラー、
前記ピラーの両側にそれぞれ配置された、前記ピラーによって横方向に囲まれた第1の誘電領域及び前記ピラーを横方向に囲む第2の誘電領域と、
前記ボディ領域に隣接する前記ピラーの上部又はその近傍で前記第1及び第2の誘電領域内にそれぞれ配置された第1及び第2のゲート部材と、
前記第1及び第2の誘電領域内にそれぞれ配置された第1及び第2のフィールドプレートと、
を含み、
前記半導体デバイスが更に、
前記複数のトランジスタセグメントの内のより多数のトランジスタセグメントの前記ソース領域に電気的に接触し、メイン垂直トランジスタと関連づけられたソース電極と、
前記複数のトランジスタセグメントの内のより少数のトランジスタセグメントの前記ソース領域に電気的に接触し、前記メイン垂直トランジスタに流れる電流の小部分をサンプリングするように動作可能な検知トランジスタと関連づけられた検知電極と、
前記基板の下面に電気的に接触するドレイン電極と、
を備え、
前記ドレイン電極並びに前記第1及び第2のゲート部材が各々、前記メイン垂直トランジスタ及び前記検知トランジスタに共通している、
ことを特徴とする半導体デバイス。 - 前記より少数のトランジスタセグメントが、単一のトランジスタセグメントに限定されている、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記ソース電極が、前記トランジスタセグメント全ての第1及び第2のフィールドプレートに電気的に接触する、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記ソース電極が、前記トランジスタセグメント全ての第2のフィールドプレートと、前記メイン垂直トランジスタに関連付けられた前記より多数のトランジスタセグメントの第1のフィールドプレートとに電気的に接触し、前記検知電極が、前記検知トランジスタに関連づけられた前記より少数のトランジスタセグメントの第1のフィールドプレートと電気的に接触する、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記第1の横方向の長さが、前記幅よりも少なくとも30倍大きい、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記第1及び第2のゲート部材が、前記第1及び第2のフィールドプレートから絶縁されている、
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記検知トランジスタと隣接するメイントランジスタとが、前記第1及び第2の誘電体領域にそれぞれ設置されたそれぞれのフィールドプレートを共有して共用する
ことを特徴とする請求項1に記載の半導体デバイス。 - 前記ドレイン電極と前記拡張ドレイン領域との間に、前記第1の導電型の基板領域を更に含み、前記基板領域が、前記メイン垂直トランジスタと前記検知トランジスタとで共通である
ことを特徴とする請求項1に記載の半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/707,586 | 2007-02-16 | ||
US11/707,586 US8653583B2 (en) | 2007-02-16 | 2007-02-16 | Sensing FET integrated with a high-voltage transistor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008064892A Division JP5214288B2 (ja) | 2007-02-16 | 2008-02-15 | 高電圧垂直トランジスタで集積された検知トランジスタ |
Publications (2)
Publication Number | Publication Date |
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JP2013141005A JP2013141005A (ja) | 2013-07-18 |
JP5638645B2 true JP5638645B2 (ja) | 2014-12-10 |
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JP2008064892A Expired - Fee Related JP5214288B2 (ja) | 2007-02-16 | 2008-02-15 | 高電圧垂直トランジスタで集積された検知トランジスタ |
JP2013036854A Expired - Fee Related JP5638645B2 (ja) | 2007-02-16 | 2013-02-27 | 高電圧垂直トランジスタで集積された検知トランジスタ |
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JP2008064892A Expired - Fee Related JP5214288B2 (ja) | 2007-02-16 | 2008-02-15 | 高電圧垂直トランジスタで集積された検知トランジスタ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8653583B2 (ja) |
EP (1) | EP1959499A3 (ja) |
JP (2) | JP5214288B2 (ja) |
CN (2) | CN102376768B (ja) |
Cited By (1)
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JP7186679B2 (ja) | 2019-08-23 | 2022-12-09 | 三菱電機株式会社 | デジタル出力装置 |
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JP7186679B2 (ja) | 2019-08-23 | 2022-12-09 | 三菱電機株式会社 | デジタル出力装置 |
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US20080197406A1 (en) | 2008-08-21 |
CN102376768A (zh) | 2012-03-14 |
CN101246887B (zh) | 2011-12-21 |
EP1959499A3 (en) | 2010-07-14 |
CN101246887A (zh) | 2008-08-20 |
EP1959499A2 (en) | 2008-08-20 |
CN102376768B (zh) | 2015-08-19 |
JP2013141005A (ja) | 2013-07-18 |
US8653583B2 (en) | 2014-02-18 |
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JP5214288B2 (ja) | 2013-06-19 |
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