JP5638490B2 - 三次元及び色彩検出における電荷管理のための方法及び装置 - Google Patents
三次元及び色彩検出における電荷管理のための方法及び装置 Download PDFInfo
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Description
本出願は、Bamji他の名義で出願され、カリフォルニア州サンノゼにあるCanesta社が譲受人である、2001年12月11日に出願された「量子効率変調を使った、CMOS適合の三次元画像検出のためのシステム」という名称の係属中の米国特許出願第10/020,339号(「’339出願」)からの一部継続出願であり、本出願は、現在、米国特許出願第6,580,496号(2003)である。この’339出願は、(2000年12月11日出願された)米国仮特許出願第60/254,873号、及び(2000年11月9日出願された)第60/247,158号に基づく優先権を主張するものである。
現在USP6,580,496号(2003年)(496発明)である、親出願の発明は、全く可動部品を必要とせず、かつ、光度データに依存するのではなく、飛行時間(TOF)データを使って、リアルタイムで距離及び速度データを測定するCMOS実装可能なシステムを提供した。光子光エネルギーを検知するCMOS適合画素検出器の二次元アレイ、及び関連処理回路の両方を含む単一IC上に、このシステムを作ることができるであろう。’496特許を生んだ出願の関連出願は、現在、Bamji他著(2003年)「量子効率変調を使ったCMOS適合三次元画像検出のための方法」という名称のUSP6,515,740号である。
Φ = 2・ω・z/C = 2・(2・π・f)・z/C
であり、ここで、Cは光の速度300,000Km/secである。従って、エネルギーエミッタからの(及び、検出器アレイからの)距離zは、以下で与えられる。
z = Φ・C/2・ω = Φ・C/{2・(2・π・f)}
3つの参照される仮特許出願で示す発明を説明する前に、USP6,580,496号、以後「’496発明」、又はUSP6,515,740号の発明を初めに説明することが役立つであろう。’496及び’740特許は同じ仕様を持つので、どちらの発明の参照も、本出願では、’496発明の参照であると表す。
W = [2ε・(Ψ0+VR-VB)]0.5{[qNA・(1+NA/ND)]-0.5+[qND・(1+ND/NA)]-0.5}
ここで、(VR-VB)はフォトダイオード240の逆バイアス、NA及びNdは、ダイオードのn及びp領域におけるそれぞれのドーピング濃度であり、かつ Ψ0=VTln(NAND/ni 2) であり、ここで、VT=kT/q=26mV、かつni=1.5・1010cm-3である。
(表1)
ΔVd=[ΔVd2(τ2)-ΔVd1(τ2)]/ΔVd1(τ1)
ここで、時間τ1において、
ΔVd1=A[1+cos(ωt)]cos(ωt+Φ)
ΔVd1=Acos(ωt+Φ)+0.5A{cos(Φ)+cos(2ωt+Φ)}
及び、時間τ2において、
ΔVd1=A[1+cos(ωt-120)]cos(ωt+Φ)
ΔVd1=Acos(ωt+Φ)+0.5A[cos(Φ+120)+cos(2ωt+Φ-120)]
ΔVd2=A[1+cos(ωt-240)]cos(ωt+Φ)
ΔVd2=Acos(ωt+Φ)+0.5A[cos(Φ-120)+cos(2ωt+Φ+120)]
従って、フィルタリング後、
ΔVd=[cos(Φ-120)-cos(Φ+120)]/cos(Φ)
ΔVd=2sin(Φ)sin(120)/cos(Φ)
ΔVd=K1sin(Φ)/cos(Φ)
ΔVd=K1tan(Φ) ここで、K1=√3
ΔVd=[ΔVd3(τ1)-ΔVd2(τ1)]/ΔVd1(τ1)=K1tan(Φ) ここで、K1=√3である。
0°-180°測定値:ΔVd(τ1)
90°-270°測定値:ΔVd(τ2)⇒ΔVd(τ2)/ΔVd(τ1)=tan(Φ)
0°-180°測定値:ΔVd(τ3)⇒ΔVd(τ2)/ΔVe(τ3)=tan(Φ)
90°-270°測定値:ΔVd(τ4)⇒ΔVd(τ4)/ΔVd(τ3)=tan(Φ) 等となる。
(1)時間 0<t<t1 においては、例えば0°及び180°変調のように、検出器D又は240-(x)は、信号S1=1+cos(ωt)でバイアスされ、検出器240-(x+1)は、信号S2=1+cos(ωt+180°)でバイアスされる。
(2)時間 0<t<t1 の間、2つの検出器から出力された信号が蓄積され、時間t=t1において、差分信号を、デジタル又はアナログの形で、格納又はサンプリングする。
(3)時間 t1<t<t2 の間、検出器240-(x)は、信号S1=1+cos(ωt+180°)でバイアスされ、検出器240-(x+1)は、信号S2=1+cos(ωt)でバイアスされる。
(4)2つの検出器からの出力信号は蓄積され、蓄積の最後、時間t=t2において、デジタル又はアナログの形で、差分信号を格納又はサンプリングする。
(5)サンプリング又は格納されたアナログ及び/又はデジタル信号について、差分信号を計算する。
(表2)
P = P0e-xK(λ) (1)
ここで、P0は、シリコン表面における光子の数である。
は、各帯域内の平均吸収係数である。それゆえ、全n個の測定値で、画像のRGB成分を以下のように推定することができる。
Claims (2)
- 検出される光エネルギーが当たり得る第一の表面を有する基板、
前記第一の表面上に配置された、空間的に離れたゲートの第一の群、及び
前記ゲートの第一の群の要素が、ゲートの第二の群の要素と交互に挟まれるように、前記第一の表面上に配置された、空間的に離れた該ゲートの第二の群、を含む半導体センサを提供するステップと、
前記ゲートの第一の群を、電気的にプログラム可能な電位でバイアスして、第一の波長の入力光エネルギーに対する感度を向上させて、前記ゲートの第一の群と関連付けられる第一の空乏領域の電荷収集深さを増加させる、ステップであって、前記第一の空乏領域の深さが前記電気的にプログラム可能な電位に応じるものであり、第二の空乏領域を浅い領域に維持しつつ、前記第一の波長の入力光エネルギーに対する感度を向上させる、ステップと、
前記ゲートの第二の群を、電気的にプログラム可能な電位でバイアスして、第二の波長の入力光エネルギーに対する感度を向上させて、前記ゲートの第二の群と関連付けられる第二の空乏領域の電荷収集深さを増加させる、ステップであって、前記第二の空乏領域の深さが前記電気的にプログラム可能な電位に応じるものであり、前記第一の空乏領域を浅い領域に維持しつつ、前記第二の波長の入力光エネルギーに対する感度を向上させる、ステップとを含み、
前記半導体センサが、前記光エネルギー内の、前記第一の波長を有する波長成分と、前記第二の波長を有する波長成分とを識別できるように、前記入力光エネルギーの波長成分が、前記第一の空乏領域内及び前記第二の空乏領域内で収集可能な電荷を生成する、
ことを特徴とする、半導体センサの波長応答を電気的にプログラムする、CMOS実装可能な方法。 - 種々の第一の色波長の入力光エネルギーに対する感度を変えるために、前記ゲートの第一の群のバイアス中に印加されるゲートバイアスを変えるステップと、
種々の第二の色波長の入力光エネルギーに対する感度を変えるために、前記ゲートの第二の群のバイアス中に印加されるゲートバイアスを変えるステップと、をさらに有する請求項1に記載の方法。
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JP2012049547A (ja) | 2012-03-08 |
EP1644700A4 (en) | 2009-09-02 |
JP2012037526A (ja) | 2012-02-23 |
JP5357392B2 (ja) | 2013-12-04 |
JP5792007B2 (ja) | 2015-10-07 |
WO2004114369A2 (en) | 2004-12-29 |
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