JP5627967B2 - グラフェンの製造方法、その製造方法により製造されたグラフェン及びそのグラフェンからなる導電性薄膜、透明電極、放熱素子または発熱素子 - Google Patents
グラフェンの製造方法、その製造方法により製造されたグラフェン及びそのグラフェンからなる導電性薄膜、透明電極、放熱素子または発熱素子 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 120
- 229910021389 graphene Inorganic materials 0.000 title claims description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000010409 thin film Substances 0.000 title description 4
- 230000017525 heat dissipation Effects 0.000 title description 2
- 238000010438 heat treatment Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 239000003054 catalyst Substances 0.000 claims description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- -1 polydimethylsiloxane Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 244000043261 Hevea brasiliensis Species 0.000 claims description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920003052 natural elastomer Polymers 0.000 claims description 3
- 229920001194 natural rubber Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229920003051 synthetic elastomer Polymers 0.000 claims description 3
- 239000005061 synthetic rubber Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- 239000012466 permeate Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
110 ベース部材
120 酸化層
130 金属触媒層
140 グラフェン層
150 転写部材
160 水槽
170 超音波発生器
180 他の転写部材
P 所定の力
Claims (13)
- グラフェンの製造方法であって、
(a)ベース部材と、前記ベース部材上に形成された親水性の酸化層と、前記酸化層上に形成された疎水性の金属触媒層と、前記金属触媒層上に形成されたグラフェン層とを含むグラフェン部材を準備する段階と、
(b)前記グラフェン部材に水を提供する段階と、
(c)前記酸化層から前記金属触媒層を分離する段階と、
(d)エッチング法を用いて前記金属触媒層を除去する段階と
を含むグラフェンの製造方法。 - 前記ベース部材がシリコン(Si)からなることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記酸化層が酸化シリコン(SiO2)から形成されたことを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記金属触媒層が、ニッケル(Ni)、銅(Cu)、アルミニウム(Al)、鉄(Fe)、コバルト(Co)及びタングステン(W)からなる群より選択される少なくとも1つの金属から形成されたことを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記(a)段階が、前記グラフェン上に転写部材を配置する段階をさらに含むことを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記転写部材が、ポリジメチルシロキサン(PDMS)、ポリエチレンテレフタレート(PET)、ポリイミドフィルム、ガラス、天然ゴム及び合成ゴムからなる群より選択される少なくとも1つの材料からなることを特徴とする請求項5に記載のグラフェンの製造方法。
- 前記(b)段階において、前記酸化層と前記金属触媒層との間に水が浸透することにより、前記酸化層と前記金属触媒層との間に隙間が形成されることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記(b)段階が、前記グラフェン部材に超音波を照射する超音波処理を含むことを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記(b)段階が、水が満たされた水槽に、前記グラフェン部材を浸透させることにより行われることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記(c)段階が、前記水が満たされた水槽に前記グラフェン部材が浸漬させられた状態で行われることを特徴とする請求項9に記載のグラフェンの製造方法。
- 前記(c)段階は、所定の力を加えて、前記酸化層から前記金属触媒層を引き離すことにより行われることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記エッチング法が、酸、フッ化水素(HF)溶液、緩衝酸化物エッチング溶液(BOE)、塩化第二鉄(FeCl3)溶液及び硝酸第二鉄(Fe(NO 3)3)溶液からなる群より選択される少なくとも1つの溶液を使用して行われることを特徴とする請求項1に記載のグラフェンの製造方法。
- 前記(d)段階後に、前記グラフェンを、或る基板または装置に転写させる段階をさらに含むことを特徴とする請求項1に記載のグラフェンの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2009-0089289 | 2009-09-21 | ||
KR1020090089289A KR101736462B1 (ko) | 2009-09-21 | 2009-09-21 | 그래핀의 제조 방법 |
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JP2011063506A JP2011063506A (ja) | 2011-03-31 |
JP5627967B2 true JP5627967B2 (ja) | 2014-11-19 |
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US (1) | US8431103B2 (ja) |
JP (1) | JP5627967B2 (ja) |
KR (1) | KR101736462B1 (ja) |
CN (1) | CN102020271B (ja) |
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CA2729648A1 (en) * | 2008-06-30 | 2010-01-07 | Dow Global Technologies Inc. | Polymer composite with intumescent graphene |
KR101652787B1 (ko) * | 2009-11-12 | 2016-09-01 | 삼성전자주식회사 | 대면적 그라핀의 제조방법 및 전사방법 |
KR101630291B1 (ko) * | 2010-06-17 | 2016-06-14 | 한화테크윈 주식회사 | 그래핀의 전사 방법 |
JP5822669B2 (ja) | 2011-02-18 | 2015-11-24 | Jx日鉱日石金属株式会社 | グラフェン製造用銅箔及びそれを用いたグラフェンの製造方法 |
KR101842018B1 (ko) * | 2011-04-01 | 2018-03-26 | 한화테크윈 주식회사 | 그래핀을 포함하는 필름 제조 방법 |
WO2012148439A1 (en) * | 2011-04-25 | 2012-11-01 | William Marsh Rice University | Direct growth of graphene films on non-catalyst surfaces |
JP5850720B2 (ja) | 2011-06-02 | 2016-02-03 | Jx日鉱日石金属株式会社 | グラフェン製造用銅箔、及びグラフェンの製造方法 |
JP5959510B2 (ja) | 2011-06-02 | 2016-08-02 | Jx金属株式会社 | グラフェン製造用銅箔、及びグラフェンの製造方法 |
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CN101474898A (zh) | 2009-01-16 | 2009-07-08 | 南开大学 | 基于石墨烯的导电碳膜及制备方法和应用 |
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