JP5604034B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

Info

Publication number
JP5604034B2
JP5604034B2 JP2008032526A JP2008032526A JP5604034B2 JP 5604034 B2 JP5604034 B2 JP 5604034B2 JP 2008032526 A JP2008032526 A JP 2008032526A JP 2008032526 A JP2008032526 A JP 2008032526A JP 5604034 B2 JP5604034 B2 JP 5604034B2
Authority
JP
Japan
Prior art keywords
film
insulating film
thin film
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008032526A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008244447A (ja
JP2008244447A5 (https=
Inventor
照幸 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008032526A priority Critical patent/JP5604034B2/ja
Publication of JP2008244447A publication Critical patent/JP2008244447A/ja
Publication of JP2008244447A5 publication Critical patent/JP2008244447A5/ja
Application granted granted Critical
Publication of JP5604034B2 publication Critical patent/JP5604034B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008032526A 2007-02-26 2008-02-14 発光装置の作製方法 Expired - Fee Related JP5604034B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008032526A JP5604034B2 (ja) 2007-02-26 2008-02-14 発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007045146 2007-02-26
JP2007045146 2007-02-26
JP2008032526A JP5604034B2 (ja) 2007-02-26 2008-02-14 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008244447A JP2008244447A (ja) 2008-10-09
JP2008244447A5 JP2008244447A5 (https=) 2011-03-31
JP5604034B2 true JP5604034B2 (ja) 2014-10-08

Family

ID=39716390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008032526A Expired - Fee Related JP5604034B2 (ja) 2007-02-26 2008-02-14 発光装置の作製方法

Country Status (4)

Country Link
US (1) US20080206997A1 (https=)
JP (1) JP5604034B2 (https=)
KR (1) KR20080079205A (https=)
CN (1) CN101256956A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5178569B2 (ja) * 2009-02-13 2013-04-10 株式会社東芝 固体撮像装置
CN103931005A (zh) * 2011-09-14 2014-07-16 玛太克司马特股份有限公司 Led制造方法、led制造设备和led
CN102646595A (zh) * 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
JP7107106B2 (ja) * 2018-08-30 2022-07-27 富士電機株式会社 窒化ガリウム系半導体装置および窒化ガリウム系半導体装置の製造方法
JP7341309B2 (ja) * 2020-02-19 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理システム
KR102826508B1 (ko) * 2020-06-02 2025-06-27 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2821517A (en) * 1954-03-08 1958-01-28 Westinghouse Electric Corp Polyesteramide-siloxane resin and insulated product prepared therefrom
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
US4668755A (en) * 1984-08-10 1987-05-26 General Electric Company High molecular weight siloxane polyimides, intermediates therefor, and methods for their preparation and use
US5137751A (en) * 1990-03-09 1992-08-11 Amoco Corporation Process for making thick multilayers of polyimide
US5183534A (en) * 1990-03-09 1993-02-02 Amoco Corporation Wet-etch process and composition
JPH05218008A (ja) * 1992-02-04 1993-08-27 Hitachi Chem Co Ltd ポリイミド系樹脂膜パターンの製造法
JPH0669186A (ja) * 1992-05-29 1994-03-11 Toray Ind Inc シリカ系被膜のパターン加工方法
US5985704A (en) * 1993-07-27 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JPH07133350A (ja) * 1993-11-12 1995-05-23 Fujitsu Ltd ポリパーフルオロアルキレンシロキサン樹脂とその製造方法および層間絶縁膜の製造方法
JP3078326B2 (ja) * 1994-03-11 2000-08-21 川崎製鉄株式会社 絶縁膜形成用塗布液およびその製造方法ならびに半導体装置用絶縁膜の形成方法およびこれを適用する半導体装置の製造方法
JPH08222550A (ja) * 1995-02-16 1996-08-30 Sony Corp 塗布絶縁膜の平坦化方法
JPH1083080A (ja) * 1996-06-26 1998-03-31 Dow Corning Asia Kk 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法
JPH1116883A (ja) * 1997-06-20 1999-01-22 Dow Chem Japan Ltd ベンゾシクロブテン樹脂層のウェットエッチング処理方法
JP3301370B2 (ja) * 1997-12-11 2002-07-15 信越化学工業株式会社 ポリシランパターン形成基板の製造方法
TWI234787B (en) * 1998-05-26 2005-06-21 Tokyo Ohka Kogyo Co Ltd Silica-based coating film on substrate and coating solution therefor
EP1323189A2 (en) * 2000-09-13 2003-07-02 Shipley Company LLC Electronic device manufacture
JP2003086372A (ja) * 2001-09-10 2003-03-20 Toshiba Corp 有機エレクトロルミネッセンス素子の製造方法
JP2003100865A (ja) * 2001-09-21 2003-04-04 Catalysts & Chem Ind Co Ltd 半導体基板の製造方法および半導体基板
JP2003179055A (ja) * 2001-12-11 2003-06-27 Hitachi Chem Co Ltd 膜形成方法及び半導体素子の製造方法
KR100985272B1 (ko) * 2002-01-17 2010-10-04 질렉스 오와이 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법
JP4741177B2 (ja) * 2003-08-29 2011-08-03 株式会社半導体エネルギー研究所 表示装置の作製方法
US7492090B2 (en) * 2003-09-19 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
CN100499035C (zh) * 2003-10-03 2009-06-10 株式会社半导体能源研究所 半导体器件的制造方法
CN1839468B (zh) * 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤
US7314785B2 (en) * 2003-10-24 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US7259110B2 (en) * 2004-04-28 2007-08-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of display device and semiconductor device
US7687404B2 (en) * 2004-05-14 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8217396B2 (en) * 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
JP4798330B2 (ja) * 2004-09-03 2011-10-19 Ｊｓｒ株式会社 絶縁膜形成用組成物、絶縁膜、およびその形成方法
US7439111B2 (en) * 2004-09-29 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7875506B2 (en) * 2004-10-13 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Etching method and manufacturing method of semiconductor device
US7547627B2 (en) * 2004-11-29 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20060068348A (ko) * 2004-12-16 2006-06-21 삼성코닝 주식회사 실록산계 중합체 및 상기 중합체를 이용한 절연막 제조방법
JP4586655B2 (ja) * 2005-07-05 2010-11-24 東レ株式会社 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
JP4687315B2 (ja) * 2005-08-04 2011-05-25 東レ株式会社 感光性樹脂組成物、それから形成された硬化膜、および硬化膜を有する素子
JP5208405B2 (ja) * 2005-12-27 2013-06-12 東京エレクトロン株式会社 基板の処理方法及びプログラム

Also Published As

Publication number Publication date
JP2008244447A (ja) 2008-10-09
CN101256956A (zh) 2008-09-03
US20080206997A1 (en) 2008-08-28
KR20080079205A (ko) 2008-08-29

Similar Documents

Publication Publication Date Title
KR102079684B1 (ko) 반도체 장치의 제작 방법
CN101047207B (zh) 半导体器件及其制造方法
JP5366517B2 (ja) 半導体装置の作製方法
US7226819B2 (en) Methods for forming wiring and manufacturing thin film transistor and droplet discharging method
TWI362231B (en) Display device
KR101061888B1 (ko) 발광 장치 및 그 제조방법
KR101123097B1 (ko) 표시장치의 제조방법
JP5587558B2 (ja) 光電変換装置
JP5604034B2 (ja) 発光装置の作製方法
KR20040045354A (ko) 반도체 디바이스, 디스플레이 디바이스, 및 발광디바이스와 그 제조 방법
KR20040010186A (ko) 박리 방법
JP5132169B2 (ja) 半導体装置の作製方法
JP4986391B2 (ja) 表示装置の作製方法
JP4472314B2 (ja) 半導体装置の作製方法、表示装置の作製方法、および発光装置の作製方法
JP4656916B2 (ja) 発光装置の作製方法
JP4624078B2 (ja) 液晶表示装置の作製方法
JP5005881B2 (ja) 半導体装置の作製方法
JP2005210104A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110214

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110214

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130402

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130430

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131025

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20131106

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20131227

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140825

R150 Certificate of patent or registration of utility model

Ref document number: 5604034

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees