CN101256956A - 绝缘膜的制造方法及半导体器件的制造方法 - Google Patents

绝缘膜的制造方法及半导体器件的制造方法 Download PDF

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Publication number
CN101256956A
CN101256956A CNA2008100810855A CN200810081085A CN101256956A CN 101256956 A CN101256956 A CN 101256956A CN A2008100810855 A CNA2008100810855 A CN A2008100810855A CN 200810081085 A CN200810081085 A CN 200810081085A CN 101256956 A CN101256956 A CN 101256956A
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CN
China
Prior art keywords
film
insulating film
thin film
heat treatment
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008100810855A
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English (en)
Chinese (zh)
Inventor
藤井照幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101256956A publication Critical patent/CN101256956A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
CNA2008100810855A 2007-02-26 2008-02-26 绝缘膜的制造方法及半导体器件的制造方法 Pending CN101256956A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007045146 2007-02-26
JP2007045146 2007-02-26

Publications (1)

Publication Number Publication Date
CN101256956A true CN101256956A (zh) 2008-09-03

Family

ID=39716390

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008100810855A Pending CN101256956A (zh) 2007-02-26 2008-02-26 绝缘膜的制造方法及半导体器件的制造方法

Country Status (4)

Country Link
US (1) US20080206997A1 (https=)
JP (1) JP5604034B2 (https=)
KR (1) KR20080079205A (https=)
CN (1) CN101256956A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115066742A (zh) * 2020-02-19 2022-09-16 东京毅力科创株式会社 基片处理方法和基片处理系统

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5178569B2 (ja) * 2009-02-13 2013-04-10 株式会社東芝 固体撮像装置
CN103931005A (zh) * 2011-09-14 2014-07-16 玛太克司马特股份有限公司 Led制造方法、led制造设备和led
CN102646595A (zh) * 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
JP7107106B2 (ja) * 2018-08-30 2022-07-27 富士電機株式会社 窒化ガリウム系半導体装置および窒化ガリウム系半導体装置の製造方法
KR102826508B1 (ko) * 2020-06-02 2025-06-27 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

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US6110651A (en) * 1997-12-11 2000-08-29 Shin-Etsu Chemical, Co., Ltd. Method for preparing polysilane pattern-bearing substrate

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JPH0669186A (ja) * 1992-05-29 1994-03-11 Toray Ind Inc シリカ系被膜のパターン加工方法
US6110651A (en) * 1997-12-11 2000-08-29 Shin-Etsu Chemical, Co., Ltd. Method for preparing polysilane pattern-bearing substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115066742A (zh) * 2020-02-19 2022-09-16 东京毅力科创株式会社 基片处理方法和基片处理系统

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JP2008244447A (ja) 2008-10-09
US20080206997A1 (en) 2008-08-28
JP5604034B2 (ja) 2014-10-08
KR20080079205A (ko) 2008-08-29

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Application publication date: 20080903